dB For Frequencies Research Articles

ZrTe3/PdSe2 vis-NIR detectors with Schottky barrier enhanced photovoltaic performance

Infrared photodetectors (PDs), particularly the near-infrared (NIR) PDs, are essential for applications in remote sensing, night vision, imaging, and so on. ZrTe3, a semimetallic transition metal trichalcogenide with zero bandgap, strong anisotropy, and enhanced conductivity, is emerging as a promising material for NIR PDs, provided that the noise can be effectively suppressed. The solution lies in constructing an appropriate barrier. PdSe2, a typical two-dimensional material with a layer-dependent bandgap is an excellent choice. By constructing a VdW heterostructure with ZrTe3 and six-layer PdSe2, a Schottky barrier is introduced to block photogenerated holes in ZrTe3, resulting in a five-order-of-magnitude reduction in dark current and an enhanced photovoltaic response. The ZrTe3/PbSe2 PD exhibits a self-powered photovoltaic response from 405 nm to 1.55 μm with a peak responsivity of 1.16 × 106 V/W, a rise/fall time of 58/66 μs, a 3 dB frequency of 4.6 kHz, and a linear polarization ratio of 3.15 at 808 nm. The strategy of introducing a Schottky barrier to semimetal-based PDs addresses the issues of high noise and biased working conditions, paving the way for high-performance semimetallic PDs in the NIR range.

Performance analysis of a high-frequency two-stage proportional valve piloted by two high-speed on/off valve arrays

Two-stage proportional valves (TSPV) have been used extensively for electro-hydraulic control systems with large-flow applications. Due to the inherent characteristics of the pilot spool, such as hysteresis, motion quality, and dead zone, the dynamic performance of the traditional TSPV cannot be further improved. To solve this issue, this paper proposes a high-frequency two-stage proportional valve (HFTSPV) piloted by two high-speed on/off valve arrays, which integrates the advantages of dual nozzle flapper mechanism and parallel-connected valve technology. First, an entire mathematical model is established, in which some key parameters are estimated by experiments, such as the actual diameters and flow coefficients of orifices, and flow coefficient of pilot valve. Then, the influences of fixed orifices with different diameters on the dynamic characteristics of main spool are explored. Subsequently, the optimal diameter of fixed orifice is calculated theoretically by using the maximum pressure sensitivity and flow linearity, aiming to realize the high dynamic and small displacement fluctuation. Finally, step and sinusoidal tracking experiments show that the delay time of the HFTSPV is close to 3.3 ms, and the displacement fluctuation decreases with the increase of tracking frequency. Amplitude–frequency results indicate that −3 dB frequency of the HFTSPV reaches 16 Hz under ±50% full scale and 30 Hz under 0% –50% full scale.

Sub-kHz-linewidth broadband-swept fiber laser based on Rayleigh scattering-enabled Brillouin random lasing oscillation with dynamic tunning Brillouin gain spectrum.

A sub-kHz-linewidth broadband-swept fiber laser using Rayleigh scattering-based Brillouin random lasing oscillation is proposed and experimentally demonstrated. Benefiting from Brillouin-involved acoustic damping and arbitrary-wavelength distributed Rayleigh feedback, leveraging instantaneously tuning Brillouin gain spectrum induced by a frequency-sweeping pump, a highly coherent random lasing emission with cavity mode elimination as well as frequency noise suppression is achieved in a sweeping manner. Results show that the proposed sweeping Stokes laser with a two-order-magnitude compressed linewidth of 840 Hz and 20 dB frequency noise suppression can unprecedentedly operate over the maximum wavelength range of 16 nm. Dynamic characteristics of the sweeping laser frequency are experimentally investigated, indicating a minimum residual nonlinearity of 0.0001 within the frequency-sweeping range of 126.63 GHz. It is believed that the proposed swept fiber laser may have attractive potential in diverse applications, including sensing and imaging.

High-Speed Self-Powered PdSe2/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe2 Quantum Island Structure.

As a two-dimensional (2D) material, palladium diselenide (PdSe2) has attracted extensive research attention due to its unique asymmetric crystal structure and extraordinary optoelectronic properties, showing great potential in electronic, optoelectronic, and other application fields. Thinner PdSe2 exhibits semiconductor properties, while the photoresponse of the photodetectors based on this film is weaker. Although increasing the thickness of the PdSe2 film can improve the photoresponse, thicker PdSe2 exhibits metallic-like properties, which is not conducive to the formation of the heterojunction. In this work, a PdSe2 2D material with a quantum island structure is prepared by a simple thermal-assisted conversion method. A new type of photodetector with a PdSe2/n--Si/n+-Si vertical PIN-like structure is innovatively proposed. Broad spectral absorption from 532 to 2200 nm and a high rectification ratio (106) of the device are achieved. The introduced n--Si layer concentrates the electric field in the depletion region, thereby shortening the transit time and accelerating the separation and collection of the carriers, resulting in the enhancement of the responsivity and 3 dB frequency compared to the traditional device with a PN structure. A recorded highest 3 dB frequency of ∼25 kHz is achieved for the PdSe2 2D-3D PIN-like device.

Battery‐free ultra‐low‐power radio‐frequency receiver for mm‐wave applications using 130‐nm CMOS technology with harvested DC supplies

SummaryThis paper presents a battery‐free ultra‐low‐power (ULP), highly integrated, and wide‐bandwidth low‐IF radio‐frequency (RF) receiver designed for millimeter‐wave (mm‐Wave) applications, utilizing 130‐nm CMOS technology. The suggested RF receiver is suitable for K‐band (n258) at 26 GHz, Ka‐band (n261 and n257) at 28 GHz, and the LMDS band at 28 GHz in fifth‐generation applications. The proposed radio receiver consists of a low‐noise driver stage implemented using a complementary current‐reuse common gate with an active shunt feedback configuration and an in‐phase/quadrature‐phase (I/Q) demodulator. The proposed RF receiver employs transformer coupling to isolate the DC path between the transconductance stage (RF stage) and the switching stage (IF stage). The driver stage expands the RF input impedance while maintaining acceptable linearity and gain with ultra‐low DC power dissipation. The DC supplies for the proposed mm‐Wave RF receiver are generated using two novel energy‐harvesting voltage doubler circuits to provide positive and negative voltages. The proposed mm‐Wave radio receiver consumes 0.475 mW from a 1.1 V DC supply and exhibits a power conversion gain (CG) of 6.3 dB, with a 3 dB frequency bandwidth extending from 22 to 32 GHz. The input 1‐dB compression point (P1dB) of the RF receiver is −2.65 dBm, and the input third‐order intercept point (IIP3) is 7.35 dBm. With a sensitivity of −66.5 dBm at a 100 MHz channel bandwidth and a dynamic range of 63.85 dB, the suggested receiver demonstrates notable performance characteristics. The proposed radio receiver boasts an excellent figure of merit (FoM) at 215 dB, surpassing published works by a margin of 8–31 dB. The primary positive supply voltage is derived from a double‐band positive voltage doubler with series resonance feedback and parallel resonance networks, efficiently achieving the desired DC voltage and output current (1.1 V and 450 μA). Meanwhile, the negative gate bias is provided by a negative voltage doubler, ensuring the necessary negative voltage (−0.5 V) without any current conditions.

Designing of CCII-Based Fractional Order Inverse Chebyshev Filters Using Gray Wolf Optimization Approach

The paper introduces a new approach for designing fractional-order inverse Chebyshev low-pass filters (FOICLF), with an emphasis on filters with an order of 1+α. The coefficients for these filters are determined through Gray Wolf Optimization by approximating filter response with the ideal response of same order FOICLF. Stability tests are conducted, and filters are implemented using Multiple Input Single Output topology with commercial ICs. Comparative analysis reveals close proximity between the ideal response of FOICLF and the designed filters, featuring maximum and mean square errors of –22.48 dB and –61.07 dB, respectively, for 1.7 order. Results are benchmarked against existing literature, highlighting superior performance in stopband and passband magnitude errors and stopband attenuation. Process, Voltage, and Temperature analysis assesses the impact of the parameter variations on the –3 dB frequency, assuring the robustness of designed filters with relative standard deviations ranging from 0.003% to 3.013% for the 1.7 order filter.

New Approaches for Realizing Transconductance-boosted VDTA Structures

This paper presents two new transconductance-boosted architectures of the voltage differencing transconductance amplifier (VDTA). The first architecture (VDTA-I) relies on the technique of transconductance enhancement using partial positive feedback which is realized through negative impedance implemented using a cross-coupled amplifier. The second architecture (VDTA-II) incorporates the concept of gate-to-source voltage enhancement using an inverting amplifier for transconductance boosting. Detailed mathematical formulations for computing transconductance gain and bandwidth are presented using high-frequency small-signal equivalent circuits of both propositions. The functionality of the proposals is validated through SPICE simulations using TSMC 0.18[Formula: see text][Formula: see text]m technology parameters. Both DC and AC analyses are carried out through simulations. An enhancement in transconductance gain of 140% is observed for VDTA-I whereas for VDTA-II it is found to be 53% in comparison to the conventional VDTA. The 3[Formula: see text]dB frequencies are recorded to be 160 and 630[Formula: see text]MHz, respectively. The PVT analyses are also carried out to test the efficacy of both propositions.

A compact frequency-selective absorber with optical transparency

This article proposes a new method for designing an optical transparent frequency-selective surface absorber using indium tin oxide (ITO) conductive film with different sheet resistances. This novel optical transparent frequency-selective absorber exhibits excellent optical transparency, ensuring a visible light transmittance exceeding 76%. Simultaneously, it exhibits broadband absorption characteristics covering the entire X-Ku band, with an absorption rate exceeding 90%. Due to the simplicity of the design, the overall structure is easily processable, and the desired product can be rapidly fabricated using laser etching equipment without adding any lumped elements in the design. Simulation and experimental results indicate that the S11–10 dB frequency range of the frequency-selective absorber is 7.7–18.4 GHz, with a transmission frequency range below −3 dB between 26.7–29.4 GHz. The findings suggest that this structure holds potential applications in microwave stealth design requiring optical transparency and high-throughput satellite communication scenarios.

In-situ Audiometry Compared to Conventional Audiometry for Hearing Aid Fitting.

The use of in-situ audiometry for hearing aid fitting is appealing due to its reduced resource and equipment requirements compared to standard approaches employing conventional audiometry alongside real-ear measures. However, its validity has been a subject of debate, as previous studies noted differences between hearing thresholds measured using conventional and in-situ audiometry. The differences were particularly notable for open-fit hearing aids, attributed to low-frequency leakage caused by the vent. Here, in-situ audiometry was investigated for six receiver-in-canal hearing aids from different manufacturers through three experiments. In Experiment I, the hearing aid gain was measured to investigate whether corrections were implemented to the prescribed target gain. In Experiment II, the in-situ stimuli were recorded to investigate if corrections were directly incorporated to the delivered in-situ stimulus. Finally, in Experiment III, hearing thresholds using in-situ and conventional audiometry were measured with real patients wearing open-fit hearing aids. Results indicated that (1) the hearing aid gain remained unaffected when measured with in-situ or conventional audiometry for all open-fit measurements, (2) the in-situ stimuli were adjusted for up to 30 dB at frequencies below 1000 Hz for all open-fit hearing aids except one, which also recommends the use of closed domes for all in-situ measurements, and (3) the mean interparticipant threshold difference fell within 5 dB for frequencies between 250 and 6000 Hz. The results clearly indicated that modern measured in-situ thresholds align (within 5 dB) with conventional thresholds measured, indicating the potential of in-situ audiometry for remote hearing care.

Design analysis and performance enhancement of a 2-element MIMO skin-implantable antenna for IoT-based health monitoring devices.

Two two-element slotted patch multiple-input multiple-output (MIMO) antenna with coplanar waveguide (CPW) feed is proposed for deployment in implantable medical devices. Implantable devices are compact and demand high-gain antennae with unidirectional radiation patterns. Regarding compactness, the antenna has a size of 16 × 6×0.25 mm3 for the operating frequency of 2.45 GHz ISM band. Miniaturized antenna geometry is attained using the slots in the radiator and with the coplanar waveguide feed. An element MIMO configuration is used for establishing a reliable communication link. The two radiators maintain a connected ground topology with a minimum edge-to-edge spacing of 7.7 mm. Mutual coupling of -29 dB and operating frequency spectrum of 1300 MHz is attained at the center cut off frequency. Unidirectional power pattern and high gain of 2.3 dB is achieved. The proposed MIMO structure is suitable for mitigating multipath fading effect and realizing higher spectral efficiency in short range communication. The in-tissue measurement results for the scattering parameters and radiation characteristics are done by placing the antenna in a pork loin. Specific absorption rate (SAR) analysis is performed to confirm the user's safety from nearfield EM waves. Antenna has safe SAR value of 0.798 W/kg for 1-g of average tissue for the power of 1-mW. The low envelope correlation coefficient of 0.035 depicts the excellent diversity performance for MIMO operation.

High-performance near-infrared narrowband circularly polarized light organic photodetectors

Efficient near-infrared (NIR) detection of circularly polarized light (CPL) provides a technologically attractive element for the next generation of quantum information, model encryption, remote sensing, and so on. However, conventional NIR CPL detectors typically require the installation of external optics, making it challenging to realize integrated and flexible devices. Despite considerable success in semiconductor-based chiroptical devices without optical elements, most of these devices only address one or a few aspects of the device quality. Here, we showcase a simple and facile strategy to achieve a high performance NIR narrowband CPL detector via combining cholesteric liquid crystal. films with a photodiode-type organic photodetector. Comprehensive performance is achieved with a super-high dissymmetry factor of 1.56, a high detectivity of 7.12 × 1012 Jones, a linear dynamic range. of 127.6 dB, a − 3 dB frequency of 279 Hz, and the rise and decay times of 0.65 ms and 5.7 ms, respectively. As a proof-of-concept, the device demonstrates excellent performance in the encrypted information using the principle of Morse code, exhibiting the potential for security communication applications.

High-performance ReSe2/PdSe2 polarized photodetectors with an ultrafast and broadband photoresponse

van der Waals heterostructures (vdWHs) fabricated by the stacking of transition-metal dichalcogenides (TMDCs) with different properties possess more significant properties beyond its individual materials, which allow them to provide excellent architectures for the optoelectronic devices. In this work, a novel polarized photodetector based on the ReSe2/PdSe2 heterostructure is constructed and explored thoroughly. The type-II band alignment is investigated by ultraviolet photoelectron spectroscopy (UPS), which facilitates the separation and transition of carriers. The device not only achieves a broadband response covering from near-ultraviolet to near-infrared, a high responsivity of 313 mA/W, but also a rapid photoswitching speed with rise/fall times about 70/82 μs owing to the built-in electric field at the heterointerface, which is further confirmed by the large 3 dB frequency over 66.4 kHz. The main advantage offered by highly asymmetric crystal structure of ReSe2 and PdSe2 is the polarization detection. Therefore, the photodetector exhibits remarkable polarization performance with a dichroism ratio as high as 1.42 by tuning the bias voltage, which is capable of extracting polarized information, and improves the ability to operate in complex situations. These results reveal the great potential of the ReSe2/PdSe2 heterostructure for ultrafast, broadband and high-performance polarized detection, promising for military and civil applications.

Evaluation of n-type gate-all-around vertically-stacked nanosheet FETs from 473 K down to 173 K for analog applications

This work presents an experimental evaluation of n-type, gate-all-around (GAA), vertically stacked nanosheet field effect transistors (NSFETs) operating in a temperature (T) range from 473 K down to 173 K and focusing on their use for analog applications. Devices with gate lengths (Lgate) of 28 nm to 200 nm were analyzed. Besides exhibiting a slight short channel effect, the shorter transistors show a good performance in terms of analog application, presenting at 173 K an intrinsic voltage gain (AV) of 30 dB and unit gain frequency (fT) of 185 GHz. This is also seen in two figures of merit that characterize the transistor performance for analog circuit design: the transistor efficiency (gm/IDS) and the gain frequency product (AV*fT). The optimum region of operation was demonstrated to be at strong inversion by the trade-off between gm/IDS and fT, where in this region Lgate = 28 nm presents a gain frequency product of ∼ 5,5THz at T = 173 K. At lower temperature, as expected, it is confirmed that the carrier mobility and the subthreshold swing (SS) improve while the threshold voltage (VT) increases.

A New Adaptive Biased Voltage Differencing Transconductance Amplifier

An adaptive biased architecture of voltage differencing transconductance amplifier (AB-VDTA) with high transconductance gain is proposed in this paper. The proposed AB-VDTA is very efficient in terms of power. The structure proposed involves of two units namely two transconductance amplifiers (TAs) and two squarer. The bias current of the TA is made to vary with a square relation of the differential input voltage. Therefore, the proposed structure provides tunable gain depending on the input differential voltage. The proposed AB-VDTA exhibits improved transconductance gain, transient characteristics, reduced standby power dissipation and linearity for large range of inputs. The mathematical formulation has been presented to establish the characteristics of the proposed AB-VDTA. The proposed structure of AB-VDTA is validated through SPICE simulations using 180[Formula: see text]nm complementary metal oxide semiconductor (CMOS) technology. The proposed scheme has an edge over the existing ones as the outlined methods enhance the transconductance gain by increasing the bias current. The [Formula: see text] values are observed to be 2.3 and 1.4[Formula: see text]mS for proposed AB-VDTA and conventional VDTA, respectively, with the corresponding 3[Formula: see text]dB frequencies 620 and 348[Formula: see text]MHz. Therefore, 64% improvement in transconductance gain is recorded for same value of bias currents. The linear input range of TA1 is observed to be [Formula: see text][Formula: see text]mV and the overall linear range of the VDTA is [Formula: see text][Formula: see text]mV for the proposed AB-VDTA. The PVT analysis is carried out to show the effect of process corners. To check the robustness of the proposed VDTA, Monte Carlo analysis is performed, and results have been included in the form of histograms. As an application example, a current mode (CM) universal single input multiple output (SIMO) biquad filter is also designed using the proposed VDTA to show its usefulness, and a 2.7 times higher pole frequency is obtained at equal bias current.

In‐Plane Integrating Unidirectional 1D CsPbBr3 Waveguide Arrays with Heterogeneous Semiconductor Wires for Photonic Integrated Circuits

Abstract1D semiconductor wires have great potential in on‐chip integrated photonics systems. However, it is still challenging to efficiently integrate various semiconductor wires on a large scale for complex functional devices. This study reports a universal route to in‐plane integrate unidirectional metal halide perovskite CsPbBr3 wire arrays with Sb2Se3, PbSeand CdS wires on mica substrates, respectively. It is found that the growth of the unidirectional wire arrays is controlled by a synergistic effect of the promoted initial nucleation on the transferred heterogeneous wires and the thermodynamically favored epitaxy on mica. The optical characterizations show that the CsPbBr3 wire arrays can act as both the light emitting media and waveguide, where the emission in the CsPbBr3 wires can be efficiently guided into the backbone Sb2Se3 wire. Importantly, the constructed CsPbBr3 waveguide arrays/Sb2Se3 wire photodetector system shows 73.4 nA photocurrent with the on/off ratio of 111, by exciting the CsPbBr3 wires at 174 mW cm−2 of 405 nm laser. The frequency dependent photoresponse characterizations exhibit a response capability of 2000 Hz modulated laser pulse and a 3 dB frequency above 300 Hz, indicating the rapid response speed. This study promotes the application of semiconductor wires in on‐chip multifunctional integrated photonic devices.

Filterless and High-Speed InP Near-Infrared Photodetector With an Ultra-Small Full-Width at Half Maximum

Near-infrared narrowband photodetection between 920 and 960 nm is quite appealing for many applications, such as optical communication, security monitoring, and machine vision, owing to the weak photon-scattering effect and the low intensity of sunlight in this range. Herein, a self-powered narrowband InP photodetector is realized based on a junction-controlled charge-collection narrowing (JCCN) mechanism, exhibiting a peak response centered at 954 nm with a full width at half maximum (FWHM) of 17 nm. Thanks to the reflection of the Schottky electrode and the passivation of the Al2O3 layer, the peak specific detectivity of the device can be up to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4.5\times 10^{{11}}$ </tex-math></inline-formula> Jones and a linear dynamic range (LDR) of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim $ </tex-math></inline-formula> 99 dB is achieved under the illumination of 954 nm. Moreover, the device shows long-term stability and excellent repeatability with a −3 dB frequency of 87.3 kHz. Furthermore, unless the wavelength of the background light is in the range of 945–967 nm, the crosstalk value of the device remains below −10 dB. These results signify that the present InP photodetector is a promising building block for future near-infrared optoelectronic systems.

Flexible microwave absorbing composites based on polydimethylsiloxane filled with hybrid carbonaceous materials: Statistical analysis of the synergistic effect

AbstractThe effect of the combination of carbon nanotubes (CNT) and graphene nanoplatelets (GNP) on the electromagnetic absorbing properties of polydimethylsiloxane (PDMS) composites was investigated. Samples were prepared by a low‐cost and scalable simple one‐step blending approach. The number of experiments and sample compositions were optimized by design of experiments (DOE) technique, namely, Axial Simplex Centroid. The samples were analyzed concerning rheology, electric conductivity and electromagnetic properties, such as absorptivity (reflection loss – RL). CNT was revealed to be more efficient than GNP in structuring the conductive network of filler particles. On the other hand, the hybrid filler composite with a 1:1 ratio (CNT/GNP = 0.67%:0.67%) presented the highest electric conductivity (3.53 × 10−3 S m−1) and the best overall electromagnetic results, with measured RL reaching −25 dB and effective absorption bandwidth frequency of 4.6 GHz, with sample 2 mm thick. The best calculated RL value for this sample was observed with 2.5 mm with RL value corresponding to −46.8 dB. The special cubic polynomial model was successfully adjusted to the experimental data and statistically proved the synergistic effect of the hybrid on the electromagnetic properties of PDMS composites. Finally, PDMS/CNT/GNP composites were successfully prepared by a simple, fast and inexpensive method.

Lattice-matched AlInN/GaN bottom DBR impact on GaN-based vertical-cavity-surface-emitting laser diodes: systematical investigations.

In this paper, by using advanced numerical models, we investigate the impact of the AlN/GaN distributed Bragg reflector (DBR) and AlInN/GaN DBR on stimulated radiative recombination for GaN-based vertical-cavity-surface-emitting lasers (VCSELs). According to our results, when compared with the VCSEL with AlN/GaN DBR, we find that the VCSEL with AlInN/GaN DBR decreases the polarization-induced electric field in the active region, and this helps to increase the electron-hole radiative recombination. However, we also find that the AlInN/GaN DBR has a reduced reflectivity when compared with the AlN/GaN DBR with the same number of pairs. Furthermore, this paper suggests that more pairs of AlInN/GaN DBR will be set, which helps to even further increase the laser power. Hence, the 3dB frequency can be increased for the proposed device. In spite of the increased laser power, the smaller thermal conductivity for AlInN than AlN results in the earlier thermal droop in the laser power for the proposed VCSEL.

Porous, magnetic carbon derived from bamboo for microwave absorption

Designing lightweight, environmentally friendly and broadband electromagnetic wave (EMW) absorbers to solve the increasingly EM pollution problem has become a research hotspot. Carbon material, especially the graphitized carbon derived from the biomass which possessing highly porosity on the framework, has considered the extremely potential in electromagnetic absorption since the ultralow density, abundant dipoles and moderate dielectric value, however, lacking of magnetic property restricts the efficient and broad absorption. Herein, a biomass-derived porous graphite-like carbon (g-C) matrix with controllable magnetic component (α-Fe and Fe3O4) decoration are realized via one-step pyrolysis reaction The development absorber exhibits an excellent EMW absorption performance with largest |RLmin| value of 47.06 dB and widest effective absorption frequency width of 5.52 GHz at a fixed coating thickness as thin as 1.80 mm, which is attributed to the good conductive loss and dielectric loss capacities permitted by the synergistic effect of equivalent circuit conductive network, the optimized impedance matching, the dipoles polarization, defect polarization and interfacial polarization. This work provides a theoretical and experimental basis for developing a green and sustainable method for preparing bamboo-derived carbon-based composites, and applying such materials to the field of EM protection and EM pollution control.

Photomultiplication‐Type Organic Photodetectors with High EQE‐Bandwidth Product by Introducing a Perovskite Quantum Dot Interlayer

AbstractA photomultiplication (PM)‐type organic photodetector (OPD) that exploits the ionic motion in CsPbI3 perovskite quantum dots (QDs) is demonstrated. The device uses a QD monolayer as a PM‐inducing interlayer and a donor–acceptor bulk heterojunction (BHJ) layer as a photoactive layer. When the device is illuminated, negative ions in the CsPbI3 QD migrate and accumulate near the interface between the QDs and the electrode; these processes induce hole injection from the electrode and yield the PM phenomenon with an external quantum efficiency (EQE) &gt;2000% at a 3 V applied bias. It is confirmed that the ionic motion of the CsPbI3 QDs can induce a shift in the work function of the QD/electrode interface and that the dynamics of ionic motion determines the response speed of the device. The PM OPD showed a large EQE‐bandwidth product &gt;106 Hz with a −3 dB frequency of 125 kHz at 3 V, which is one of the highest response speeds reported for a PM OPD. The PM‐inducing strategy that exploits ionic motion of the interlayer is a potential approach to achieving high‐efficiency PM OPDs.