This paper presents an ultra-wideband low noise amplifier design using the dual-resonant broadband matching technique. The proposed LNA achieves a 10.2dB gain with ±0.9dB gain flatness over a frequency range of 3.1–10.6GHz and a −3-dB bandwidth of 2.4–11.6GHz. The measured noise figure ranges from 3.2 to 4.7dB over 3.1–10.6GHz. At 6.5GHz, the measured IIP3 and input-referred P1dB are +6dBm and −5dBm, respectively. The proposed LNA occupies an active chip area of 0.56mm2 in a TSMC 0.18μm RF-CMOS process and consumes 16mW from a 1.8V supply.