Dark Current Transport Research Articles

Current transport mechanisms of electrochemically deposited CdS/CdTe heterojunction

The dark current transport mechanism in electrochemically deposited n-CdS/ p-CdTe thin film heterojunctions is investigated. The forward current measured in the temperature range between 200° and 305°K can be expressed as J f = J 0( T) exp ( AV) and the reverse current can be expressed as J r = −CV exp −CV[−λ(V d−V) −( 1 2 ) ] . The current mechanisms are consistent with a multi step recombination-tunneling model.