Damping-like Torque Research Articles

Electrical Excitation and Detection of Chiral Magnons in a Compensated Ferrimagnetic Insulator.

Magnon chirality refers to the precessional handedness of magnetization around the external magnetic field, which is fixed as right-handed in ferromagnets. Compensated ferrimagnets accommodate parallel and antiparallel configurations of net magnetization and angular momentum, and thus serve as an ideal platform for studying magnon chirality. Through performing spin-torque ferromagnetic resonance experiments, we experimentally study the reversal of low-frequency magnon chirality across the magnetization and angular momentum compensation temperatures in a Gd_{3}Fe_{5}O_{12}/Pt bilayer. In particular, we demonstrate that dampinglike spin torque could sensitively excite and detect the reversal of low-frequency magnon chirality. By solving the coupled Landau-Lifshitz-Gilbert equations, the close correlation between the reversal of low-frequency magnon chirality and the sign of net angular momenta is established. The electrical excitation and detection of low-frequency magnon chirality in compensated ferrimagnetic insulators could be useful for building chiral spintronics.

Signatures of magnetism control by flow of angular momentum

Exploring new strategies to manipulate the order parameter of magnetic materials by electrical means is of great importance not only for advancing our understanding of fundamental magnetism but also for unlocking potential applications. A well-established concept uses gate voltages to control magnetic properties by modulating the carrier population in a capacitor structure1–5. Here we show that, in Pt/Al/Fe/GaAs(001) multilayers, the application of an in-plane charge current in Pt leads to a shift in the ferromagnetic resonance field depending on the microwave frequency when the Fe film is sufficiently thin. The experimental observation is interpreted as a current-induced modification of the magnetocrystalline anisotropy ΔHA of Fe. We show that (1) ΔHA decreases with increasing Fe film thickness and is connected to the damping-like torque; and (2) ΔHA depends not only on the polarity of charge current but also on the magnetization direction, that is, ΔHA has an opposite sign when the magnetization direction is reversed. The symmetry of the modification is consistent with a current-induced spin6–8 and/or orbit9–13 accumulation, which, respectively, act on the spin and/or orbit component of the magnetization. In this study, as Pt is regarded as a typical spin current source6,14, the spin current can play a dominant part. The control of magnetism by a spin current results from the modified exchange splitting of the majority and minority spin bands, providing functionality that was previously unknown and could be useful in advanced spintronic devices.

Large dampinglike torque contribution originating from the orbital Rashba-Edelstein effect at a Pt/CoO interface

Large dampinglike torque contribution originating from the orbital Rashba-Edelstein effect at a Pt/CoO interface

Spin-torque ferromagnetic resonance based on current-induced impedance

Spin-torque ferromagnetic resonance (ST-FMR) has been widely used for measuring damping-like spin–orbit torques in magnetic bilayers. Typically, the ratio between the damping-like and field-like spin–orbit torques are extrapolated based on the ferromagnetic resonance line shapes. However, when the field-like spin–orbit torque is unknown, the line shape analysis may lead to errors in extrapolating the damping-like spin–orbit torque. Here, we propose a modified version of the ST-FMR that allows extrapolation of both damping-like and field-like torques independently. By introducing an alternating current to the sample, the RF impedance is modulated, allowing detection via the reflected microwave. We show that the extrapolated field-like and damping-like torques in Py/Pt samples are consistent with the technique measuring current-induced linewidth and resonance field change but have much better signal-to-noise ratio. Our proposed method paves a way for more accurate measurement of spin–orbit torques.

Emerging Spin-Orbit Torques in Low-Dimensional Dirac Materials.

We report a theoretical description of novel spin-orbit torque components emerging in two-dimensional Dirac materials with broken inversion symmetry. In contrast to usual metallic interfaces where fieldlike and dampinglike torque components are competing, we find that an intrinsic dampinglike torque which derives from all Fermi-sea electrons can be simultaneously enhanced along with the fieldlike component. Additionally, hitherto overlooked torque components unique to Dirac materials emerge from the coupling between spin and pseudospin angular momenta, leading to spin-pseudospin entanglement. These torques are found to be resilient to disorder and could enhance the magnetic switching performance of nearby magnets.

Enhanced Spin-Orbit Torque Efficiency in Platinum-Gadolinium Oxide Nanocomposite Films.

Spin-orbit torque (SOT) has emerged as an effective means of manipulating magnetization. However, the current energy efficiency of SOT operation is inefficient due to low damping-like SOT efficiency per unit current bias. In this work, we dope conventional rare earth oxides, GdOy, into highly conductive platinum by magnetron sputtering to form a new group of spin Hall materials. A large damping-like spin-orbit torque (DL-SOT) efficiency of about 0.35 ± 0.013 is obtained in Pt0.70(GdOy)0.30 measured by the spin-torque ferromagnetic resonance (ST-FMR) technique, which is about five times that of pure Pt under the same conditions. The substantial enhancement of the spin Hall effect is revealed by theoretical analysis to be attributed to the strong side jump induced by the rare earth oxide GdOy impurities. Moreover, this large DL-SOT efficiency contributes to a low critical switching current density (8.0 × 106 A·cm-2 in the Pt0.70(GdOy)0.30 layer) in current-induced magnetization switching measurements. This systematic study on SOT switching properties suggests that Pt1-x(GdOy)x is an attractive spin current source with large DL-SOT efficiency for future SOT applications and provides another idea to regulate the spin Hall angle.

Quantifying the large contribution from orbital Rashba–Edelstein effect to the effective damping-like torque on magnetization

The generation of large spin currents, and the associated spin torques, which are at the heart of modern spintronics, has long been achieved by charge-to-spin conversion mechanisms, i.e., the spin Hall effect and/or the Rashba–Edelstein effect, intrinsically linked to strong spin–orbit coupling. Recently, a novel path has been predicted and observed for achieving significant current-induced torques originating from light elements, hence possessing weak spin–orbit interaction. These findings point out to the potential involvement of the orbital counterpart of electrons, namely the orbital Hall and orbital Rashba–Edelstein effects. In this study, we aim at quantifying these orbital-related contributions to the effective torques acting on a thin Co layer in different systems. First, we demonstrate in Pt|Co|Cu|AlOx stacking a comparable torque strength coming from the conversion due to the orbital Rashba–Edelstein effect at the Cu|AlOx interface and the one from the effective spin Hall effect in the bottom Pt|Co system. Second, in order to amplify the orbital-to-spin conversion, we investigate the impact of an intermediate Pt layer in Co|Pt|Cu|CuOx. From the Pt thickness dependence of the effective torques determined by harmonic Hall measurements complemented by spin Hall magneto-resistance and THz spectroscopy experiments, we demonstrate that a large orbital Rashba–Edelstein effect is present at the Cu|CuOx interface, leading to a twofold enhancement of the net torques on Co for the optimal Pt thickness. Our findings not only demonstrate the crucial role that orbital currents can play in low-dimensional systems with weak spin–orbit coupling but also reveal that they enable more energy efficient manipulation of magnetization in spintronic devices.

Direct and Inverse Spin Splitting Effects in Altermagnetic RuO2.

Recently, the altermagnetic materials with spin splitting effect (SSE), have drawn significant attention due to their potential to the flexible control of the spin polarization by the Néel vector. Here, the direct and inverse altermagnetic SSE (ASSE) in the (101)-oriented RuO2 film with the tilted Néel vector are reported. First, the spin torque along the x-, y-, and z-axis is detected from the spin torque-induced ferromagnetic resonance (ST-FMR), and the z-spin torque emerges when the electric current is along the [010] direction, showing the anisotropic spin splitting of RuO2. Further, the current-induced modulation of damping is used to quantify the damping-like torque efficiency (ξDL) in RuO2/Py, and an anisotropic ξDL is obtained and maximized for the current along the [010] direction, which increases with the reduction of the temperature, indicating the present of ASSE. Next, by way of spin pumping measurement, the inverse altermagnetic spin splitting effect (IASSE) is studied, which also shows a crystal direction-dependent anisotropic behavior and temperature-dependent behavior. This work gives a comprehensive study of the direct and inverse ASSE effects in the altermagnetic RuO2, inspiring future altermagnetic materials and devices with flexible control of spin polarization.

Interfacial Modulation of Spin-Orbit Torques Induced by Two-Dimensional van der Waals Material ZrSe3.

Two-dimensional van der Waals (2D vdW) materials are widely used in spin-orbit torque (SOT) devices. Recent studies have demonstrated the low crystal symmetry and large spin Hall conductivity of 2D vdW ZrSe3, indicating its potential applications in low-power SOT devices. Here, we study the interfacial contribution of SOTs and current-induced magnetization switching in the ZrSe3/Py (Ni80Fe20) and ZrSe3/Cu/Py heterostructures. SOT efficiencies of samples are detected by the spin-torque ferromagnetic resonance (ST-FMR), and out-of-plane damping-like torque (τB) is observed. The ratio between τB and the field-like torque (τA) decreases from 0.175 to 0.138 when inserting 1 nm Cu at the interface and then drops to 0.001 when the thickness of Cu intercalation is 2 nm, indicating that Cu intercalation inhibits the τB component of SOT. Moreover, the SOT efficiency is increased from 3.05 to 5.21, which may be attributed to the Cu intercalation being beneficial to improve the interface between Py and ZrSe3. Theoretical calculation has shown that the Cu spacer can change the conductivity of ZrSe3 from semiconductor to conductor, thereby decreasing the Schottky barrier and increasing the transmission efficiency of the spin current. Furthermore, magneto-optical Kerr effect (MOKE) microscopy is employed to verify the current-driven magnetization switching in these structures. In comparison to the ZrSe3/Py bilayer, the critical current density of ZrSe3/Cu/Py is reduced when inserting 1 nm Cu, demonstrating the higher SOT efficiency and lower power consumption in ZrSe3/Cu/Py structures.

Electric manipulation of the magnetization in heterostructure Pt/Co/Bi2Se3

Spin–orbit torque (SOT) can provide efficient electrical manipulation of magnetism via applying electrical current to breaking the symmetry of damping-like torque. In the heterojunction of heavy and ferromagnetic metal, Dzyaloshinskii–Moriya interaction (DMI) is one of the key ingredients for stabilizing chiral spin structures, like chiral domain walls. Meanwhile, materials with larger charge-spin conversion rates are also highly expected for the efficient SOT. In this paper, spin–orbit torque magnetic switching is observed in the perpendicularly magnetized Pt/Co/Bi2Se3 and shows relatively high efficiency with low critical switching current density of about 5 × 105 A cm−2. The SOT efficiency and DMI in perpendicularly magnetized Pt/Co/Bi2Se3 were quantitatively investigated by electrical detection of the effective spin Hall field. The DMI constant is about 2.6 mJ m−2, and the effective spin Hall angle of Pt/Co/Bi2Se3 is about 0.14. The work also demonstrates that the Bi2Se3 layer takes the main responsibility for SOT, and the Pt/Co interface is the main source of DMI in Pt/Co/Bi2Se3 structures, which makes it possible to achieve independent optimization of DMI and SOT in the Pt/Co/Bi2Se3 structure at room temperature for the advanced application of spintronic devices.

The central role of tilted anisotropy for field-free spin–orbit torque switching of perpendicular magnetization

The discovery of efficient magnetization switching upon device activation by spin Hall effect (SHE)-induced spin–orbit torque (SOT) changed the course of magnetic random-access memory (MRAM) research and development. However, for electronic systems with perpendicular magnetic anisotropy (PMA), the use of SOT is still hampered by the necessity of a longitudinal magnetic field to break magnetic symmetry and achieve deterministic switching. In this work, we demonstrate that robust and tunable field-free current-driven SOT switching of perpendicular magnetization can be controlled by the growth protocol in Pt-based magnetic heterostructures. We further elucidate that such growth-dependent symmetry breaking originates from the laterally tilted magnetic anisotropy of the ferromagnetic layer with PMA, a phenomenon that has been largely neglected in previous studies. We show experimentally and in simulation that in a PMA system with tilted anisotropy, the deterministic field-free switching exhibits a conventional SHE-induced damping-like torque feature, and the resulting current-induced effective field shows a nonlinear dependence on the applied current density. This relationship could be potentially misattributed to an unconventional SOT origin.

Reduction of Operating Current by Harnessing the Field‐ and Damping‐Like Torque Ratios in Nonmagnet–Ferromagnet Heterojunctions

With the growing demand for high‐speed electronic devices with low energy consumption, spin–orbit torque (SOT) has become a significant focus. SOT can switch the magnetization direction in a material system with broken inversion symmetry, such as a normal metal (NM)/ferromagnet (FM) heterojunction. The SOT consists of two mutually orthogonal vector components along with the injected current direction: the transverse damping‐like torque (DLT) and the longitudinal field‐like torque (FLT). Numerous studies have mainly centered on the DLT for the SOT switching mechanism. However, DLT and FLT are essential to enhance SOT efficiency because FLT boosts the magnetization precession motion. Herein, heterojunctions consisting of NM 1 (Ta, W, or Pt)/NM 2 (Nb)/FM (CoFeB) are devised to manipulate the FLT‐to‐DLT ratio (η) through the change in Nb thickness. Furthermore, experimental confirmation exists for reducing threshold current as η increases. The SOT devices with substantial η generate random numbers. The National Institute of Standards and Technology Special Publication 800‐90B test verifies randomness and confirms that the SOT devices are beneficial sources for true random number generators (TRNGs). These findings indicate the crucial role of FLT in the SOT switching process and underscore its significance in developing SOT‐based TRNG devices.

Magnetic-Proximity-Induced Efficient Charge-to-Spin Conversion in Large-Area PtSe2/Ni80Fe20 Heterostructures.

As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe2, a transition-metal dichalcogenide, is a promising material for several applications, from optoelectrics to sensors. However, its potential for spintronics applications has yet to be explored. In this work, we demonstrate that the PtSe2/Ni80Fe20 heterostructure can generate large damping-like current-induced spin-orbit torques (SOT), despite the absence of spin-splitting in bulk PtSe2. The efficiency of charge-to-spin conversion is found to be -0.1 ± 0.02 nm-1 in PtSe2/Ni80Fe20, which is 3 times that of the control sample, Ni80Fe20/Pt. Our band structure calculations show that the SOT due to PtSe2 arises from an unexpectedly large spin splitting in the interfacial region of PtSe2 introduced by the proximity magnetic field of the Ni80Fe20 layer. Our results open up the possibilities of using large-area PtSe2 for energy-efficient nanoscale devices by utilizing proximity-induced SOT.

Field-free self-oscillation of magnetization enabled by the fieldlike spin-orbit torque

Fieldlike spin-orbit torque, which behaves like a torque from a magnetic field, but relies on the current together with the damplike one, was recognized to influence magnetization switching. However, its role on magnetic oscillations remains to be explored. By linear stability analysis and energy averaging technique, we obtain analytic formulas for the stable boundaries of various states. Then, a phase diagram is constructed, which is controlled by the current and a tunable ratio β of the fieldlike torque to the dampinglike one. We find that some new stable, bistable and dynamic states come forth. Especially, a bias-field-free self-oscillation emerges for negative β, which enables the average energy balance between the dampinglike torque and the intrinsic damping. There occur two kinds of oscillations, analogous to the usual in-plane and out-of-plane precessions. If increasing the current, the frequency declines for the former, and subsequently rises for the latter. Varying β slightly affects the frequency range, but dramatically alters the adjustable range of current. In addition, the phase diagram indicates that the switching direction reverses with β stepping over −1/α with α being the damping constant, and the switching current decreases with ∣β∣ increasing.

Giant, Linearly Increasing Spin-Orbit Torque Efficiency in Symmetry-Broken Spin-Orbit Torque Superlattices.

Magnetic heterostructures with high spin-orbit torque efficiency and low impedance have great promise for low-power spintronic technologies. We report a symmetry-broken spin-orbit superlattice [Pt0.75Cu0.25/Co/Ta]n, in which the dampinglike spin-orbit torque efficiency accumulates linearly with the repeat number n and achieves a giant value of >200% when n = 16, which is 100 times stronger than that of a conventional magnetic heterostructure with a clean Pt (e.g., 2% at a resistivity of 7 μΩ cm). The giant spin-orbit torque effect arises predominantly from the spin Hall effect of Pt0.75Cu0.25. The anomalous Nernst effect increases remarkably as the repeat number n increases, implying a critical need to include the thermal effect in the analysis of magnetic superlattices and multilayers. The giant spin-orbit torque, low resistivity, and strong anomalous Nernst effect suggest the great potential of the superlattice [Pt0.75Cu0.25/Co/Ta]n for low-power memory and logic technologies as well as high-performance thermoelectric battery and sensor applications.

Investigation of spin–orbit torque switching mechanism in crystalline ferromagnetic semiconductor

We investigated the spin–orbit torque (SOT) switching mechanism of a single layer of crystalline diluted ferromagnetic semiconductor by simulating the current scan hysteresis using the Landau–Lifshitz–Gilbert equation. Our study focuses on the switching of the out-of-plane magnetization component during current scans to provide a detailed understanding of the SOT switching process. The simulation results reveal that the SOT switching strongly depends on the relative strengths of the damping-like torque (DLT) and field-like torque (FLT). Through a systematic analysis, we found that the DLT to FLT ratio required for full SOT switching of the out-of-plane magnetized (GaMn) (AsP) film falls within the range of 0.5–1.0. We also identified a relationship between the DLT to FLT ratio and the linear behavior of the out-of-plane component of magnetization during current scans under a strong in-plane bias field. This suggests that the DLT to FLT ratio of a ferromagnetic film can be directly determined from current scan measurements under a large external field, providing crucial information for developing SOT-based devices.

Enhanced spin–orbit torques in strained NiFe/Pt bi-layers on flexible substrate

Magnetization manipulation caused by spin–orbit torque is one of the central themes investigated in spintronics domain. The spin–orbit torque efficiencies can be manoeuvred by application of mechanical strain. In this direction, this study furthers the effort in understanding the evolution of spin–orbit torque efficiencies in mechanically strained ferromagnet (FM)/heavy metal(HM) (Ni81Fe19/Pt) bi-layer films on flexible kapton substrate, by the use of spin torque ferromagnetic resonance (ST-FMR) measurement technique. We report a tensile strain induced enhancement in damping-like and field-like spin–orbit torque efficiencies. The effective damping-like spin torque conductivity increased by 42% on the application of 0.312% tensile strain, which is encouraging from the magnetization switching application point of view. In order to investigate the driving factors behind the enhanced damping-like spin torque conductivity, ab-initio calculations were also carried out. Our findings provide insights into the workings of strain in FM/HM bi-layer stack and is a step forward in the implementation of flexible spintronics devices.

Picosecond spin-orbit torque-induced coherent magnetization switching in a ferromagnet.

Electrically controllable nonvolatile magnetic memories show great potential for the replacement of conventional semiconductor-based memory technologies. Here, we experimentally demonstrate ultrafast spin-orbit torque (SOT)-induced coherent magnetization switching dynamics in a ferromagnet. We use an ultrafast photoconducting switch and a coplanar strip line to generate and guide a ~9-picosecond electrical pulse into a heavy metal/ferromagnet multilayer to induce ultrafast SOT. We then use magneto-optical probing to investigate the magnetization dynamics with sub-picosecond resolution. Ultrafast heating by the approximately 9 picosecond current pulse induces a thermal anisotropy torque which, in combination with the damping-like torque, coherently rotates the magnetization to obtain zero-crossing of magnetization in ~70 picoseconds. A macro-magnetic simulation coupled with an ultrafast heating model agrees well with the experiment and suggests coherent magnetization switching without any incubation delay on an unprecedented time scale. Our work proposes a unique magnetization switching mechanism toward markedly increasing the writing speed of SOT magnetic random-access memory devices.

Giant Spin-Orbit Torque in Sputter-Deposited Bi Films.

Bismuth (Bi) has the strongest spin-orbit coupling among non-radioactive elements and is thus a promising material for efficient charge-to-spin conversion. However, previous electrical detections have reported controversial results for the conversion efficiency. In this study, an optical detection of a spin-orbit torque is reported in a Bi/CoFeB bilayer with a polycrystalline texture of (012) and (003). Taking advantage of the optical detection, spin-orbit torque is accurately separated from the Oersted field and achieves a giant damping-like torque efficiency of +0.5, verifying efficient charge-to-spin conversion. This study also demonstrates a field-like torque efficiency of -0.1. For the mechanism of the charge-to-spin conversion, the bulk spin Hall effect and the interface Rashba-Edelstein effect are considered.

Efficient spin–orbit torque switching in perpendicularly magnetized CoFeB facilitated by Fe2O3 underlayer

Spin–orbit torque (SOT) is recognized as an effective way to manipulate magnetization in spintronic devices. For the low-power consumption and high-endurance requirements of future computer architectures, reducing the critical SOT switching current density and improving SOT efficiency are crucial, especially in the perpendicularly magnetized structures. Here, we have conducted a comprehensive study on improving the SOT efficiency of the Ta/CoFeB structure with a perpendicular magnetic anisotropy by inserting an oxide insulating layer Fe2O3 as the bottom layer. We found that only a 1–5 nm thickness of Fe2O3 significantly reduces the SOT critical switching current by 70% and enhances the spin Hall angle of Ta. The spin Hall angle increases from 0.078 for pure Ta/CoFeB to 0.13 for Fe2O3/Ta/CoFeB, and both types of spin–orbit torques, damping-like and field-like torques, are significantly enhanced. It is suggested that the atomic diffusion of O from the Fe2O3 underlayer leads to the partial oxidization of the Ta layer as well as the Ta/CoFeB interfaces, accounting for the observed enhanced SOT efficiency. Our results provide a reliable method to improve the SOT performance in perpendicularly magnetized structures by inserting the oxide underlayer using magnetron sputtering, in favor of its potential real-world application in spintronic devices.