Damaged Layer Research Articles

Study on chloride ion penetration performance of recycled composite micro powder concrete under freeze-thaw environment

With the increasing generation of construction waste, the rational utilization of recycled micro powder has become crucial for the efficient development of construction waste resource recycling. This study investigates the chloride ion penetration performance of Recycled Composite Micro Powder Concrete (RCMPC) under freeze-thaw conditions. By incorporating Recycled Concrete Powder (RCP) and Recycled Brick Powder (RBP) in a ratio of 2:8 to replace various proportions of cement, specimens with different water-to-binder ratios (0.35, 0.45, 0.55) were designed and subjected to freeze-thaw cycles (FTC), pore structure analysis, rapid chloride ion migration, and diffusion tests. The results indicate that the frost resistance of the concrete decreases with the addition of Recycled Composite Micro Powder (RCMP). As the RCMP content increases, the mass loss rate and relative dynamic modulus decline, while the thickness of the damage layer increases. Moreover, the chloride ion migration coefficient and diffusion coefficient exhibit a linear increase with the number of FTC, with specimens containing higher RCMP content showing poorer chloride ion penetration performance. Based on the experimental results, this paper establishes a chloride ion diffusion model for RCMPC considering freeze-thaw damage, which demonstrates good predictive capability for the chloride ion diffusion behavior of RCMPC in freeze-thaw environments, providing a theoretical basis for its application in cold and marine regions.

A simplified procedure for evaluation of damage-depth in concrete exposed to high temperature using the impact-echo method

Concrete is widely recognized as a material capable of withstanding the intrusion of high temperatures during fires. However, under different high-temperature conditions, concrete can still experience strength reduction, cracking, or spalling, which can significantly impact the safety and durability of concrete structures. Conventionally, the wave refraction technique was used to detect the depth of this damage layer. However, the wave refraction technique is a time-consuming point-by-point detection method. In order to increase detection efficiency, this paper proposes a simplified method based on a single-point test. Numerical analysis of the thermal conduction of a concrete slab exposed to elevated temperature was performed first to investigate the temperature distribution within the concrete slab. Subsequently, the wave refraction technique was numerically simulated to evaluate the damage depth of the concrete slab. According to the refracted wave propagation path, a simplified procedure is proposed for the detection of the damage depth of concrete under high temperature. In the simplified procedure, a receiver is placed at an adequate distance from the impact source so that the first arrival wave at the receiver will be a wave refracted from the interface between the damaged layer and the sound layer inside the concrete. To verify the applicability of the proposed simplified procedure, concrete slab specimens subjected to an elevated temperature of 600 °C were tested in this study. The experimental results indicate that the simplified method proposed in this paper can indeed be used to detect the depth of high-temperature damage in concrete. In addition, the experimental results show that under the same high-temperature exposure conditions, the depth of fire damage increases with a decrease in the water-cement ratio. This can be attributed to the higher thermal conductivity coefficient of concrete with a lower water-cement ratio.

Microstructure evolution of CdZnTe crystals irradiated by heavy ions

Consideration of irradiation effects is important for in-orbit operation and radiation protection in aerospace applications. The configuration of irradiation defects and their impact on deteriorating the carrier transport properties of CZT crystals need to be clarified. In this study, the microdefect evolution mechanism of CdZnTe (CZT) crystals under 10 MeV Chlorine (Cl) ion irradiation at flux of 1×1010∼1×1012 n·cm-2 are investigated. The stacking faults first appear in the CZT crystal at 4.5×10-4 displacement per atom (dpa), which are categorized into slip-type, gap-type and vacancy-type. In order to hinder the further expansion of stacking fault, S-shaped stacking fault dipole appears. When the dpa reaches 4.5×10-2, the local phase transition occurs in the damage zone to form CuPt-A ordered phase with ZnTe/CdTe periodic arrangement because the fluctuation in local composition and strain caused by cascade collisions. The deterioration of electric field distribution and charge collection caused by irradiation damage layer leads to the decrease of γ-ray detection ability. The energy resolution (ER) of the CZT detector for γ-ray can be maintained at 30.6% when the ion flux accumulates to 1×1012 n·cm-2, revealing high irradiation hardness. Consequently, these findings provide a theoretical basis for the radiation damage recovery of CZT detectors, further demonstrating that CZT crystals are the most competitive new generation of room-temperature nuclear radiation detection materials, and can provide radiation protection strategies for similar compound semiconductor materials.

Atomic-scale insights into the microstructure and interface evolution mechanism of copper/tantalum nanofilms during ultra-precision grinding

The copper (Cu)/tantalum (Ta) nanofilms are the vital component in the through silicon via (TSV) wafer. However, the current lack of research on the ultra-precision machining of Cu/Ta nanofilms limits the development of TSV-based 3D integration technologies. In this work, molecular dynamics simulations are conducted to reveal the microstructure and interface evolution mechanism of Cu/Ta nanofilms during nano-grinding under various grinding depths. The results show that the material removal mode differs between the Cu and Ta layers, and the thickness of the subsurface damage layer of the Cu layer is greater than that of the Ta layer. The Cu/Ta interface is well stabilized, and small amounts of micro-defects appear only at larger grinding depths after grinding. The lattice mismatch of the constituent layers and the hindering role by the interface lead to stress concentration at the interface, and it is more obvious with increasing grinding depth. Nevertheless, there is a significant stress release after grinding. Our computations indicate that the competition between the evolution of interfacial structures and discrepancies in the physical properties of constituent layers leads to an increase in grinding forces at the interface. Furthermore, the heat transfer is obstructed by the Cu/Ta interface. This study provides valuable insights into the grinding mechanisms of Cu/Ta nanofilms, which is conducive to further improving the manufacturing process of the TSV wafer and enhancing the performance of microelectronic devices.

Effect of irradiation temperature on the mobility of structural and vacancy defects in the damaged layer of Li2ZrO3 ceramics

The paper presents the assessment results of the irradiation temperature effect on the change in the type of structural defects caused by irradiation with helium ions in the near-surface layer of Li2ZrO3 ceramics, as well as determining the nature of structural damage using the electron paramagnetic resonance method in the case of irradiation fluence variation. During characterization of the structural changes caused by helium ion irradiation, the main attention was paid to detailing the type of structural defects and radiolysis products arising during irradiation, alongside alterations in their concentration using the electron paramagnetic resonance method. During the experiments, it was determined that the observed effects of thermally stimulated mobility of vacancy defects in the damaged layer caused by irradiation with helium ions indicate a positive effect of thermal heating of samples during irradiation at low fluences. This effect consists in a decline in the number of oxygen vacancies in the damaged layer at low irradiation fluences (1015 – 1016 cm-2), the concentration of which was determined using the EPR method, and the observed structural changes at low irradiation fluences in the case of an elevation in irradiation temperatures are associated with deformation distortion of the crystalline structure of ceramics caused by transformation energy processes, and thermal expansion effects.

The effect of residual mechanical stresses and vacancy defects on the diffusion expansion of the damaged layer during irradiation of BeO ceramics

The paper presents the results of a study on the application of Raman and UV spectroscopy methods to determine the structural damage kinetics in the near-surface layer of BeO ceramics caused by high-dose irradiation with He2+ ions. Interest in this type of ceramics is due to the combination of its structural and thermophysical parameters, making these ceramics one of the promising classes of materials for microelectronics and structural materials for nuclear reactors, with the possibility of operation in conditions of heightened radiation background. According to the conducted studies, it was established that with the irradiation fluence growth, changes in the nature of deformation structural distortions associated with the accumulation of residual mechanical stresses of tensile and compressive types are observed. At irradiation fluences of 1016-5×1016 Не2+/cm2, tensile stresses play a dominant role in structural distortions, while the value of compressive stresses at fluence growth makes up a small share in the overall nature of the deformations. Moreover, an elevation in the irradiation fluence above 5×1016 He2+/cm2 leads to a rise in the concentration of defects caused by the formation of oxygen vacancies, as well as He-VO type complexes, the presence of which is indicated by the halo intensity growth in the Raman spectra, as well as a change in the intensity of the absorption bands. Analysis of changes in thermophysical parameters revealed that a rise in structural distortions associated with the accumulation of complex defects results in thermal conductivity reduction and a deterioration in heat transfer processes associated with partial amorphization of the damaged layer. Moreover, the established direct relationship between the value of residual mechanical stresses and the degradation of thermal conductivity indicates the cumulative effect of destructive changes caused by irradiation, as well as the influence of diffusion mechanisms on the damaged layer thickness growth.

Unveiling the temperature-dependent deformation mechanisms of single crystal gallium nitride in nanoscratching

The surface grinding process of single crystal gallium nitride (GaN) is intricate, and localized high temperature generated during interactions between the workpiece and the abrasives on grinding wheel is inevitable. Elevated temperatures significantly affect the deformation mechanisms of GaN, which remains inadequately elucidated. In this study, nanoscratching experiments were systematically conducted on the (0001) plane of GaN single crystal across a temperature range up to 500 ℃, and the resultant deformation patterns were thoroughly characterized. The results indicate that temperature elevation delays the brittle-to-ductile transitions in GaN and enhance its anisotropy. Additionally, GaN exhibits increased plasticity as temperature rises, leading to distinct scratch-induced subsurface deformation patterns at varying temperatures: at room temperature, the thickness of the subsurface damaged layer is primarily influenced by the penetration depth of cross slips, whereas at 500 ℃, basal slipping predominantly defines the thickness of the subsurface damaged layer. The plastic deformation patterns at both room temperature and 500 ℃ mainly involve phase transition, polycrystal formation, slips, stacking faults, dislocations and lattice distortions. The discrepancies in deformations at varying temperatures were thoroughly investigated by transmission electron microscopy and molecular dynamics simulations, and the underlying mechanisms were elucidated.

The connection between the accumulation of structural defects caused by proton irradiation and the destruction of the near-surface layer of Li4SiO4 – Li2TiO3 ceramics

The key problem of using lithium-containing ceramics as materials of breeders for the propagation of tritium in thermonuclear reactors is phase stability, as well as the preservation of strength and thermophysical parameters of ceramics during their operation, which is accompanied by the accumulation of fission products in the near-surface layers, alongside mechanical influences from the outside. Moreover, in contrast to other types of ceramics, the presence of lithium in the composition of the samples under study leads to limitations in the use of classical analysis methods (scanning electron microscopy, energy dispersive analysis or optical spectroscopy) of structural changes caused by the accumulation of radiation damage, which requires the use of more complex methods for the assessment of the defect concentration in the structure, as well as establishing their relationship with the deterioration of strength and thermophysical parameters, playing a key role in determining the stability mechanisms and further exploitation of ceramics for tritium production. In this regard, the aim of the study is to determine the kinetics of changes in the near-surface layer of two-phase Li4SiO4 – Li2TiO3 ceramics associated with the accumulation of structural distortions caused by irradiation, as well as their relationship with strain embrittlement and disorder. During the studies, it was found that the accumulation of implanted hydrogen in the near-surface layer under high-dose irradiation initiates deformation distortion processes, the intensity of which depends on the ratio of components in the ceramics, according to which the optimal compositions of two-phase ceramics are ratios of components from 0.3 to 0.6. Determination of the type of defects in the composition of the damaged layer, as well as their concentration, was carried out using the electron spin resonance (ESP) method. During the studies, it was found that at low irradiation fluences, the dominant role in the accumulation of structural defects is played by vacancy defects associated with E′-centers, the formation of which is associated with structural distortions, while as the fluence grows, the structure is dominated by deformation disordering caused by the accumulation of Ti3+ defects and HC2 centers (SiO43-), the concentrations of which have a clear dependence on the phase composition of the ceramics.

Influences of ultrasonic vibration directions, amplitudes, and frequencies on sapphire polishing studied by molecular dynamics

The sapphire surface morphology, atom removal rate, temperature, polishing force, subsurface damage, dislocation, and stress were explored under different ultrasonic directions, frequencies and amplitudes through molecular dynamics (MD). For both vertical and horizontal vibration, the rising ultrasonic frequency and amplitude will reduce the tangential and normal force, and increase the subsurface temperature and the material removal rate (MRR). Higher frequencies promote the basal dislocation, thus reducing the subsurface damage. Higher amplitudes cause thinner subsurface damage layer under horizontal vibration. However, it is opposite at vertical vibration. The horizontal vibration can obtain a flatter polished surface and a thinner subsurface damage layer due to the longer trajectory and less impact on sapphire surface. This study can provide reference for sapphire high-quality polishing.

Antibiotics damage the colonic mucus barrier in a microbiota-independent manner.

Antibiotic use is a risk factor for development of inflammatory bowel diseases (IBDs). IBDs are characterized by a damaged mucus layer, which does not separate the intestinal epithelium from the microbiota. Here, we hypothesized that antibiotics affect the integrity of the mucus barrier, which allows bacterial penetrance and predisposes to intestinal inflammation. We found that antibiotic treatment led to breakdown of the colonic mucus barrier and penetration of bacteria into the mucus layer. Using fecal microbiota transplant, RNA sequencing followed by machine learning, ex vivo mucus secretion measurements, and antibiotic treatment of germ-free mice, we determined that antibiotics induce endoplasmic reticulum stress in the colon that inhibits colonic mucus secretion in a microbiota-independent manner. This antibiotic-induced mucus secretion flaw led to penetration of bacteria into the colonic mucus layer, translocation of microbial antigens into circulation, and exacerbation of ulcerations in a mouse model of IBD. Thus, antibiotic use might predispose to intestinal inflammation by impeding mucus production.

UV-OZONE Treatment for Suppressing Surface Damages on Silicon Solar Cells.

In the preparation process of c-Si solar cells, qualified Si wafers must be processed through mechanical processing during manufacturing. Most of these processes involve mechanical processing, which inevitably results in severe mechanical damage layers and a wafer surface with large roughness. The current industry practice involves etching of the damage layer using an acid/alkali solution, and it is usually followed by deposition of additional passivation layers in the subsequent processes. However, even with these treatments, there still remain non-negligible microscopic saw damage and scratches on the wafer surface, which hinder the urgent development of a higher conversion efficiency of solar cells. Here, we provide a simple method to effectively suppress the impact of this surface damage. UV-OZONE treatment, which involves generation of an oxide layer and subsequent cleaning with hydrofluoric acid, leads to the effective regain of solar cell performance due to the passivation of dangling bonds and removal of sharp microstructures based on the creation of mechanical scratches. In addition, PEDOT:PSS/n-Si solar cells were prepared to exploit their strong surface dependence to investigate the effect of scratches on the overall performance. These results further validate the impact of scratches on solar cells, and a simple and effective method for surface damage suppression is provided.

Study of radiation-induced structural changes in the near-surface layer of ZrO2 ceramics caused by He2+ irradiation

Abstract The aim of this study is to determine changes in the near-surface layer of ZrO2 ceramics caused by irradiation with low-energy He2+ ions, as well as the associated formation of defects and structural deformations. During the experimental work conducted, it was established that the accumulation of deformation-structural distortions is of two stage nature, having a direct dependence on irradiation fluence and, therefore, on atomic displacement value. It was determined that at small atomic displacement values (less than 10 dpa), the main mechanisms of structural distortions are caused by tensile residual stresses, the value of which is less than 0.1 GPa. At the same time, the deformation distortion of chemical bonds has a pronounced anisotropy associated with a more pronounced distortion of the Zr–OI chemical bonds, the distortion of which results in the formation of vacancy defects in the form of VO. During determination of alterations in optical characteristics depending on the atomic displacement value, it was found that the dominant role at small values of dpa (less than 10 dpa) is played by point defects, which influence the formation of obstacles in the form of absorbing centers. In this case, an increase in the irradiation fluence above 1017 ion/cm2 results in a growth in the linear refractive index, the change of which has a direct correlation with the value of residual stresses in the damaged layer. Certain dependencies of changes in structural features and their relationship with deformation distortions, as well as the accumulation of vacancy defects, can subsequently be used to predict the potential of using these ceramics as materials for new generation nuclear reactors.

Non-Destructive Quantification of In-Plane Depth Distribution of Sub-Surface Damage on 4H-SiC Wafers Using Laser Light Scattering

The development of non-destructive quantitative evaluation techniques for the in-plane depth distribution of sub-surface damage (SSD) layer induced by mechanical processing of chemical mechanical polishing (CMP) finished SiC wafers is essential to reduce the occurrence of crystal defects during epitaxial growth. Until now, no wafer inspection method has been able to nondestructively and quantitatively assess the in-plane depth distribution of the SSD. This study investigates the correlation between the scattered light intensity measured nondestructively by the Laser light scattering (LLS) method and the SSD depth estimated by destructive inspection using the Dynamic AGE-ing® method, a sublimation-controlled etching and growth process, to develop a novel non-destructive SSD inspection method. As a result, it was found that there is an exponential relationship between the scattered light intensity by the LLS method on the bare wafer surface and the depth of the SSD layer that contributes to the formation of in-grown stacking faults (IGSF) during subsequent epitaxial growth. The results show that SiC wafer inspection using the novel LLS method, which introduces this relational equation, enables non-destructive and quantitative evaluation of SSD depth and in-plane distribution.

Study of irradiation temperature effect on radiation-induced polymorphic transformation mechanisms in ZrO2 ceramics

The influence of high-dose exposure to heavy Xe23+ ions on the alteration in optical and structural properties, alongside the polymorphic transformation degree in polycrystalline ZrO2 ceramics is considered in the paper. The focus on such studies is primarily due to the possibility of obtaining new data on the mechanisms of radiation-induced damage associated with exposure to heavy ions comparable to fission fragments of nuclear fuel, alongside the comparison of the observed changes in the damaged layer properties with the polymorphic transformation processes characteristic of ZrO2 ceramics. Analysis of the obtained data on alterations in the optical and structural features of ceramics contingent upon irradiation conditions revealed that, the irradiation temperature leads to less pronounced structural degradation caused by deformation distortions of OI-Zr-OI, Zr-OII, Zr-OI/OII and Zr-OI bonds, as well as the accumulation of oxygen vacancies in the damaged layer. At the same time, using a set of research methods, it was determined that at irradiation temperatures above 700 K the processes of polymorphic transformations t – ZrO2→ c – ZrO2 caused by radiation and deformation effects are less pronounced, which results in the formation of inclusions in the form of t – ZrO2.

Artifact-free sample preparation of metal thin films using Xe plasma-focused ion beam milling for atomic resolution and in situ biasing analyses

The focused ion beam (FIB) technique using Ga ion beams is generally employed for transmission electron microscopy (TEM) sampling owing to its location-specific beam controllability on materials. However, Ga ion beam bombardment-induced damage hinders reliable structural analysis. Furthermore, Ga ions implanted in the damaged surface layer substantially lower the chemical stability of the samples, such as metal thin films. Here, aiming for atomic-level interface structural analysis, we propose a useful approach for the TEM sample preparation of heteroepitaxial Ag/Cu metal films without physical damage or chemical instabilities using the Xe plasma FIB (PFIB) system. Xe plasma-assisted sampling ensured that the interface structure of the Ag/Cu metal film remained intact; in contrast, the sample prepared using the focused Ga ion beam was damaged by elemental mixing. Furthermore, the sample prepared by Xe plasma milling exhibited robust structural stability over time after exposure to air in contrast to the sample prepared by Ga-ion milling, which induced structural decomposition owing to oxidation. In addition to the static structural analysis, the Cu thin film sample prepared by Xe PFIB exclusively exhibited pristine structural properties under in situ electrical biasing experiments, thus confirming the feasibility of conducting a fundamental study of Cu electromigration without artifacts.

Significant improvement of n-contact performance and wall plug efficiency of AlGaN-based deep ultraviolet light-emitting diodes by atomic layer etching.

The reactive ion etching (RIE) process is needed to fabricate deep ultraviolet (DUV) light-emitting diodes (LEDs). However, the n-contact performance deteriorates when the high-Al n-AlGaN surface undergoes RIE, leading to decreased LED performance. In this study, we employed an atomic layer etching (ALE) technology to eliminate surface damage generated during the mesa etching process, thus enhancing the n-Al0.65Ga0.35N ohmic contact. The improved contact performance reduced LED operation voltage and mitigated device heat generation. It was observed that DUV LEDs treated with 200 cycles of ALE showed a reduction in operating voltage from 8.3 to 5.2 V at 10 mA, with a knee voltage of 4.95 V. The peak wall plug efficiency (WPE) was approximately 1.74 times that of reference devices. The x-ray photoelectron spectroscopy (XPS) analysis revealed that ALE removed the surface damage layer induced by plasma etching, eliminating surface nitrogen vacancies and increasing surface electron concentration. Consequently, it facilitated better ohmic contact formation on n-Al0.65Ga0.35N. This study demonstrates that the ALE technology achieves etching with minor surface damage and is suitable for use in III-nitride materials and devices to remove surface defects and contaminations, leading to improved device performance.

Improvement of Laser Damage Resistance of Fused Silica Using Oxygen-Aided Reactive Ion Etching

Reactive ion etching (RIE) with fluorocarbon plasma is a facile method to tracelessly remove the subsurface damage layer of fused silica but has the drawback of unsatisfactory improvement in laser damage resistance due to the induction of secondary defects. This work proposes to incorporate O2 into the CHF3/Ar feedstock of RIE to suppress the formation of secondary defects during the etching process. Experimental results confirm that both the chemical structural defects, such as oxygen-deficient center (ODC) and non-bridging oxygen hole center (NBOHC) defects, and the impurity element defects, such as fluorine, are significantly reduced with this method. Laser-induced damage resistance is consequently greatly improved, with the 0% probability damage threshold increasing by 121% compared to the originally polished sample and by 41% compared to the sample treated with conventional RIE.

Laser-excited surface acoustic wave method for detecting subsurface damage of processed silicon nitride ceramics

The non-destructive testing for subsurface damage of processed silicon nitride ceramics is significant to the improvement of processing technology and evaluation of product performance. A novel method for the measurement of subsurface damage based on dispersion of laser-excited surface acoustics wave is proposed in this paper. The subsurface damage distribution is quantified as the damage density and depth of the damage layer. The forward model of surface acoustics wave propagation in damage layer is derived by the stiffness matrix method. Bayesian inversion is applied to estimate model parameters and uncertainties of subsurface damage from the experimental dispersion data. Laser ultrasonic experiments are carried out on four samples with different substrate material parameters and surface qualities to demonstrate the feasibility of the method for detecting varying degrees of subsurface damage. The results prove that with reasonable use of prior information about damage depth predicted by surface roughness, subsurface damage with a depth ∼10 times smaller than the minimum wavelength of surface acoustics wave is accurately characterized. The reliability of the results is further verified by Vickers microhardness tester.

Reconstruction method for a three-demensional discrete element numerical model of landslides using an integrated multi-electrode resistivity tomography method and an unmanned aerial vehicle survey

To analyze the hazard-causing modes of landslides, this paper proposes a three-dimensional discrete element model reconstruction method that employs an unmanned aerial vehicle survey and multi-electrode resistivity tomography method. To convert the resistivity profile into a material profile, we adopt the peak of the probability density method for material classification and utilize the Haar wavelet transform for image denoising. Subsequently, inverse distance weighting interpolation and the curtain-point method are used to transform two-dimensional profiles into a 3D visualization model. Similarly, the triangular mesh boundary can be extracted from the 3D visualization model using the curtain-point method. A mapping function f including the macroscopic parameters, was defined to populate the particles within the boundaries. Using the iterative method and defining the loss function L for parameter calibration, the targeted 3D discrete element model was constructed after setting the velocity threshold. This method was applied to the Changhe landslide (September 14, 2019) in Gansu Province, China, which had a typical damaged soil layer due to earthquake and rainfall factors. The results indicate that the lower part first exhibits significant displacement, followed by the upper and middle parts, which is consistent with the on-site inspections and UAV findings.

Quantitative analysis of the polishing performance of Wurtzite-SiC surface texture on surface quality and material removal rate

Molecular dynamics simulation is used to study Wurtzite-SiC's structural changes after polishing process. For realistic planarization conditions, various surface-textured structures are also used. Polishing speed greatly impacts dislocation distribution. Increasing velocity to 2 Å/ps reduces dislocation length from 800 to 500 Å quickly. Increasing polishing depth from 15 to 30 Å improves surface roughness by 25 %. Besides, textures such as RPrt-s (Rectangular prism textured) and TPrt-s (Triangular prism textured) show surface improvement but still result in high values greater than 42 Å. The amorphous transition rate (ATR) and material removal rate (MRR) closely correlate and display similar variations. The material's triangular prism textured surface enables for minimal SDL (subsurface damage layer) thickness, dislocation density, and atom removal while preserving low groove surface roughness.