Coefficient D33 Research Articles

A study on the electrical properties of flux grown 0.91PZN-0.09PT single crystals for high-performance piezoelectric and pyroelectric device applications

In the present work, large-size piezoelectric single crystals of 0.91[Pb(Zn1/3Nb2/3)O3]-0.09PbTiO3 (PZN-9PT) have been grown by high-temperature flux method. Rietveld refinement analysis of X-ray diffraction data demonstrates the existence of monoclinic [Cm and Pm] phases, further supported by electron diffraction studies. PZN-9PT single crystal shows broad and diffused dielectric response peaks at 354 K and 443 K with noticeable frequency dispersion identified from temperature-dependent dielectric measurements. The 001 oriented PZN-9PT elements sliced from the grown single crystals display a remnant polarisation (Pr) of 30 µC/cm2, saturation polarization (Ps) of 33 µC/cm2, and an enhanced piezoelectric strain of 0.3 %. In addition, the piezoelectric coefficients d33, d31 and electric field-induced strain d33∗ measured by the direct method is 2100 pC/N, 1650 pC/N and 2500 pm/V, respectively. The mechanism behind the enhanced piezoelectric properties of PZN-9PT is explained with reference to the stabilization of the monoclinic phase and polarization rotation mechanisms. Further, the pyroelectric coefficient, p measured to be 11.31 × 10−4 C/m2 K at room temperature and 51.22 × 10−4 C/m2 K at the ferroelectric to the paraelectric phase transition temperature. The enhanced piezoelectric and pyroelectric properties of PZN-9PT make them suitable for high-performance piezoelectric transducers, actuators at ambient temperature and pyroelectric sensors at elevated temperature, respectively.

Ion-Boosting the Charge Density and Piezoelectric Response of Ferroelectrets to Significantly High Levels.

In contrast to molecular-dipole polymers, such as PVDF, ferroelectrets are a new class of flexible spatially heterogeneous piezoelectric polymers with closed or open voids that act as deformable macro-dipoles after charging. With a spectrum of manufacturing processes being developed to engineer the heterogeneous structures, ferroelectrets are made with attractive piezoelectric properties well-suited for applications, such as pressure sensors, acoustic transducers, etc. However, the sources of the macro-dipole charges have usually been the same, microscopic dielectric barrier discharges within the voids, induced when the ferroelectrets are poled under a large electric field typically via a so-called corona poling, resulting in the separation and trapping of opposite charges into the interior walls of the voids. Such a process is inherently self-limiting, as the reverse internal field from the macro-dipoles eventually extinguishes the microdischarges, resulting in limited density of ions and not too high overall piezoelectric performance. Here, a new method to form ferroelectrets with gigantic electroactivity is proposed and demonstrated with the aid of an external ion booster. A laminate consisting of expanded polytetrafluoroethylene (ePTFE) and fluorinated-ethylene-propylene (FEP) was prefilled with bipolar ions produced externally by an ionizer and sequentially poled to force the separation of positive and negative ions into the open fibrous structure, rendering an impressive piezoelectric d33 coefficient of 1600 pC/N─an improvement by a factor of 4 in comparison with the d33 of a similar sandwich poled with nonenhanced corona poling. The (pre)filling clearly increases the ion density in the open voids significantly. The charges stored in the open-cell structure stays at a high level for at least 4 months. In addition, an all-organic nanogenerator was made from an ePTFE-based ferroelectret, with conducting poly(3,4-ethylene dioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) coated fabric electrodes. When poled with this ion-boosting process, it yielded an output power twice that of a similar sample poled in a conventional corona-only process. The doubling in output power is mainly brought about by the significantly higher charge density achieved with the aid of external booster. Furthermore, aside from the bipolar ions, extra monopolar ions can during the corona poling be blown into the open pores by using for instance a negative ionic hair dryer to produce a unipolar ePTFE-based ferroelectret with its d33 coefficient enhanced by a factor of 3. Ion-boosting poling thus unleashes a new route to produce bipolar or unipolar open-cell ferroelectrets with highly enhanced piezoelectric response.

Piezo-Responsive Hydrogen-Bonded Frameworks Based on Vanillin-Barbiturate Conjugates.

A concept of piezo-responsive hydrogen-bonded π-π-stacked organic frameworks made from Knoevenagel-condensed vanillin–barbiturate conjugates was proposed. Replacement of the substituent at the ether oxygen atom of the vanillin moiety from methyl (compound 3a) to ethyl (compound 3b) changed the appearance of the products from rigid rods to porous structures according to optical microscopy and scanning electron microscopy (SEM), and led to a decrease in the degree of crystallinity of corresponding powders according to X-ray diffractometry (XRD). Quantum chemical calculations of possible dimer models of vanillin–barbiturate conjugates using density functional theory (DFT) revealed that π-π stacking between aryl rings of the vanillin moiety stabilized the dimer to a greater extent than hydrogen bonding between carbonyl oxygen atoms and amide hydrogen atoms. According to piezoresponse force microscopy (PFM), there was a notable decrease in the vertical piezo-coefficient upon transition from rigid rods of compound 3a to irregular-shaped aggregates of compound 3b (average values of d33 coefficient corresponded to 2.74 ± 0.54 pm/V and 0.57 ± 0.11 pm/V), which is comparable to that of lithium niobate (d33 coefficient was 7 pm/V).

Predicted ferromagnetic monolayer CrSCl with large vertical piezoelectric response: A first-principles study

For two-dimensional (2D) materials, piezoelectric ferromagnetism with large out-of-plane piezoresponse is highly desirable for multifunctional ultrathin piezoelectric device application. Here, we predict that Janus monolayer CrSCl is an out-of-plane ferromagnetic semiconductor with large vertical piezoelectric response and high Curie temperature. The predicted out-of-plane piezoelectric strain coefficient d31 is −1.58 pm/V, which is higher than that of most 2D materials (compare absolute values of d31). The large out-of-plane piezoelectricity is robust against electronic correlation and biaxial strain, confirming reliability of large d31. The calculated results show that tensile strain is conducive to high Curie temperature, large magnetic anisotropy energy, and large d31. Finally, by comparing d31 of CrYX (Y = S; X = Cl, Br, I) and CrYX (Y = O; X = F, Cl, Br), we conclude that the size of d31 is positively related to electronegativity difference of X and Y atoms. Such findings can provide valuable guidelines for designing 2D piezoelectric materials with large vertical piezoelectric response.

Dynamics of periodic solutions in the reaction-diffusion glycolysis model: Mathematical mechanisms of Turing pattern formation

A reaction-diffusion glycolysis Sel’kov model with cross-diffusion is established. It is proved that Turing instability emerges at the periodic solutions in the reaction-diffusion glycolysis model. Moreover, according to the diffusivity of glycolysis model, a formula(the first derivative formula of the minimum positive periodic solution) is established to determine that Turing patterns generated by the destabilization of periodic solutions actually depend on self-diffusion coefficient d11 and cross-diffusion coefficient d21. At last, the reliability of theoretical analysis is verified by numerical simulations.

Crystal Structure, Microstructure and Electrical Properties of (Ba0.97Ca0.03)(Ti0.94-xMnxSn0.06)O3 Ceramics Synthesized by the Solid State Combustion Technique

This research studied the effect of MnO2 substitution on the phase formation, microstructure and electrical properties of (Ba0.97Ca0.03)(Ti0.94-xMnxSn0.06)O3 (BCTMS with x = 0, 0.005, 0.010, 0.015, and 0.020 mol%) lead-free piezoelectric ceramics. The BCTMS ceramics were fabricated by the solid-state combustion technique. The powders and green pellets were calcined and sintered at 1100 °C for 4 h and 1400 °C for 2 h, respectively. The XRD patterns of all BCTMS ceramics exhibited a single perovskite structure with the coexisting orthorhombic and tetragonal phases, where the tetragonal phase increased and the orthorhombic decreases with increasing x. The average grain size decreased from 35 to 13 µm with increasing x. The dielectric constants at room temperature (ε r) and at the Curie temperature (εC ), density, remanent polarization (Pr ), and piezoelectric coefficient (d33 ) decreased as x increased. The changes in the crystal structure and microstructure affected electrical properties.

SnP2S6: A Promising Infrared Nonlinear Optical Crystal with Strong Nonresonant Second Harmonic Generation and Phase-Matchability

High-power infrared laser systems with broadband tunability are of great importance due to their wide range of applications in spectroscopy and free-space communications. These systems require nonlinear optical (NLO) crystals for wavelength up/down conversion using sum/difference frequency generation, respectively. NLO crystals need to satisfy many competing criteria, including large nonlinear optical susceptibility, large laser induced damage threshold (LIDT), wide transparency range and phase-matchability. Here, we report bulk single crystals of SnP_2S_6 with a large non-resonant SHG coefficient of d33= 53 pm/V at 1550nm and a large LIDT of 350 GW/cm^2 for femtosecond laser pulses. It also exhibits a broad transparency range from 0.54 {\mu}m to 8.5{\mu}m (bandgap of ~2.3 eV) and can be both Type I and Type II phase-matched. The complete linear and SHG tensors are measured as well as predicted by first principles calculations, and they are in excellent agreement. A proximate double-resonance condition in the electronic band structure for both the fundamental and the SHG light is shown to enhance the non-resonant SHG response. Therefore, SnP2S6 is an outstanding candidate for infrared laser applications.

Domain configuration and domain switching in Dy-doped 0.72PMN-0.28PT Piezoceramics with high d33 coefficient

The PMN-28PT-xDy (x = 0, 1, 2, 3 and 4%) piezoelectric ceramics were prepared by the two-step sintering method. A high piezoelectric coefficient d33 ∼ 1270 pC/N is achieved when x = 3%. As the Dy doping content increases, the domain configuration transforms from ordered stripe-domains to disordered watermark-domains, while the average domain size decreases evidently from ∼635 nm to ∼100 nm. The domain switching was investigated through strain curves and ferroelectric hysteresis loops measured at different electric field amplitudes and frequencies. To fully polarize the PMN-28PT-xDy ceramics, the electric field amplitude was found better be higher than 2.5Ec. If pole the ceramics under a. c. electric field of 3Ec, the electric field frequency had better not exceed f2. In general, the rare-earth Dy doping has significant effect on domain configuration and domain switching as well as the piezoelectricity.

Influence of ZnO Film Deposition Parameters on Piezoelectric Properties and Film-to-Substrate Adhesion on a GH4169 Superalloy Steel Substrate.

ZnO film is widely used in the field of health monitoring sensors, which has high requirements for the piezoelectric coefficient and film-to-substrate adhesion of the ZnO film. In this study, ZnO thin films were grown on a GH4169 superalloy steel (GSS) substrate using magnetron sputtering, and the effects of the sputtering power, argon–oxygen ratio, and sputtering pressure on the piezoelectric coefficient and film-to-substrate adhesion were studied. The composition, microstructure, and crystal orientation of ZnO thin films deposited under different process parameters were analyzed using X-ray diffraction (XRD), a scanning electron microscope (SEM), and an energy spectrum analyzer (EDS). The piezoelectric coefficient d33 was measured using a piezoelectric coefficient measuring instrument. The critical value of adhesion between the film and substrate was measured using the scratch method. The results demonstrated that the ZnO films had the most desirable properties when the sputtering power was 150 W, the argon–oxygen ratio was 25:10, and the sputtering pressure was 0.7 Pa. The XRD results showed that the ZnO film samples had the strongest (002) crystal orientation at 2θ = 34.4°; the SEM photos showed that the film samples were flat and uniform; and the EDS composition analysis results showed that the composition was close to the theoretical value. The maximum d33 coefficient value was 5.12 pC/N, and the maximum value of film-to-substrate adhesion between the ZnO films and GSS substrate was 4220 mN.

Growth of large langatate (La3Ta0.5Ga5.5O14, LTG) crystals with high electrical resistivity

Large, 60 mm in diameter langatate (La3Ta0.5Ga5.5O14, LTG) crystals were grown with the Czochralski method in air. The full width at half maximum (FWHM) value of the rocking curve is 39.6″, and the piezoelectric coefficient d11 value is 7.1 pC/N. The as-grown LTG crystal possesses excellent thermal properties, and the electrical resistivity at high temperatures (400∼600°C) was measured. After being heat-treated in Ar at 900, 1100, and 1300°C, the electrical resistivity increases evidently, and a La-rich and Ga-poor layer is observed on the surface of LTG. The LTG sample annealed in Ar at 1100°C for 10 h shows the highest electrical resistivity, which is up to 2.45*108 Ω⋅cm at 500°C. The content of oxygen vacancies of LTG increased after the annealing procedure, and the defect model was used to explain the increase in high-temperature electrical resistivity. The obtained high-quality large LTG crystal can be used in the field of high-temperature piezoelectric sensors.

Process Control Monitor (PCM) for Simultaneous Determination of the Piezoelectric Coefficients d31 and d33 of AlN and AlScN Thin Films.

Accurate and efficient measurements of the piezoelectric properties of AlN and AlScN films are very important for the design and simulation of micro-electro-mechanical system (MEMS) sensors and actuator devices. In this study, a process control monitor (PCM) structure compatible with the device manufacturing process is designed to achieve accurate determination of the piezoelectric coefficients of MEMS devices. Double-beam laser interferometry (DBLI) and laser Doppler vibrometry (LDV) measurements are applied and combined with finite element method (FEM) simulations, and values of the piezoelectric parameters d33 and d31 are simultaneously extracted. The accuracy of d31 is verified directly by using a cantilever structure, and the accuracy of d33 is verified by in situ synchrotron radiation X-ray diffraction; the comparisons confirm the viability of the results obtained by the novel combination of LDV, DBLI and FEM techniques in this study.

Full matrix electromechanical properties of textured Pb(In1/2Nb1/2)O3-Pb(Sc1/2Nb1/2)O3-PbTiO3 ceramic

Textured relaxor-PbTiO3 (PT) ceramics possess advantages of crystal-like properties, high composition homogeneity, and low cost, and have, thus, received considerable attention from the piezoelectric community. To promote the applications of textured relaxor-PT ceramics, here we characterize the full electromechanical parameters (elastic, dielectric, and piezoelectric coefficients) and the frequency dependence of the coercive field (EC) for the recently reported textured Pb(In1/2Nb1/2)O3-Pb(Sc1/2Nb1/2)O3-PbTiO3 (PIN-PSN-PT) ceramic. Our results show that the textured PIN-PSN-PT ceramic possesses high piezoelectric coefficients (d31 = −365 pC N−1, d33 = 770 pC N−1, and g33 = 40.4 × 10−3 m2 C−1) and electromechanical coupling factors (k33 = 87% and kp = 82%), far outperforming those of the commercial ceramic PZT-5H (d31 = −274 pC N−1, d33 = 593 pC N−1, g33 = 1.97 × 10−2 m2 C−1, k33 = 75%, and kp = 65%). In addition, the textured PIN-PSN-PT ceramic exhibits lower dielectric constants (ɛ33S = 478) compared with PZT-5H and relaxor-PT crystals, which can greatly promote the sensitivity of receiving transducers. Moreover, the textured PIN-PSN-PT ceramic with a high Tr−t (172 °C) shows better thermal stability compared to commercial relaxor-PT crystals (Tr−t < 130 °C). The results presented here will benefit the development of piezoelectric devices made of textured ceramics.

Lead titanate nanowires/polyamide-imide piezoelectric nanocomposites for high-temperature energy harvesting

With an increasing demand for self-powered microelectronics to be used in scientific tasks and exploration missions in extreme environments, the implementation of piezoelectric energy harvesting at high temperature is an important research focus for renewable energy sources. Piezoelectric composites made from piezoelectric ceramic fillers and polymer matrices combine high electromechanical coupling with flexibility, resulting in a versatile candidate for energy harvesting. In this research, a nanocomposite formed by lead titanate nanowires (PbTiO3 NWs) and a polyamide-imide (PAI) matrix is developed and shown to have an excellent piezoelectric response at high temperatures. By in situ measurements of the piezoelectric g31 and d31 coefficients of the nanocomposite films with different PbTiO3 NW weight fractions in the temperature range 25–250 °C, the dependence of temperature and filler concentration on the piezoelectric properties are fully characterized. In addition, the effect of NW alignment on piezoelectric properties through direct ink writing is also studied. Finally, a bending-mode energy harvester made from this nanocomposite is demonstrated to generate a maximum power density of 33 μW·m−2 at resonance and a power density of 20 μW·m−2 under low-frequency random excitation at 200 °C, while keeping a long operating life of at least 100 h. In conclusion, this work provides a new solution for high-temperature energy harvesting from low-frequency random vibrations using PbTiO3/PAI nanocomposites.

Influence of PZT volume fraction, composite thickness and cement matrix on the performance of d15 shear mode 1–3 connectivity cement-based piezoelectric composites

In this work, we investigated the influence of PZT volume fraction, composite thickness and cement matrix on the performance of 1–3 connectivity cement-based piezoelectric composites working in d15 shear mode. Results revealed that the piezoelectric strain coefficient d15 and the relative dielectric coefficient εr decrease with the decrease of the PZT volume fraction and increase with the increase of the composite thickness. The piezoelectric strain coefficient d15 of the composite specimens with Phosphoaluminate cement (PALC) matrix is the largest, followed by Sulfoaluminate cement (SAC) matrix and Portland cement (PC) matrix. The relative dielectric coefficient εr of the composite specimens with PC matrix is the largest, followed by PALC matrix and SAC matrix. The piezoelectric voltage factor g15 increases with the decrease of the PZT volume fraction and decreases with the increase of the composite thickness. The piezoelectric voltage factor g15 of the composite specimens with PC matrix is the smallest, and the values of specimens with SAC matrix and PALC matrix are very close.

High Piezoelectric Performance in Pb(Ni1/3Nb2/3)O3-Pb(Sc1/2Nb1/2)O3-PbTiO3 Ternary System Featuring Small Structural Distortion and Heterogeneous Domain Configuration.

Ternary/polynary perovskite solid solutions based on binary systems are well-known for their high piezoelectric performance. In this work, a series of Pb(Ni1/3Nb2/3)O3-Pb(Sc1/2Nb1/2)O3-PbTiO3 compositions with the particularly high piezoelectric coefficient of d33* > 1000 pm/V and d33 > 700 pC/N have been developed. The optimal performance was achieved in the 0.52PNN-0.14PSN-0.34PT composition (d33* = 1120 pm/V, d33 = 804 pC/N, and Tm = 109 °C). The high piezoelectric performance of this system is reported and is superior to those of most lead-based ternary/polynary ceramics. By a combination of in situ high-energy synchrotron diffraction with transmission electron microscopy (TEM), the origin of the high piezoelectric response has been unambiguously revealed. Upon application of an external electric field, synchrotron diffraction profiles show no splitting but prominent shifting, indicating that the large intrinsic lattice strain arising from the reduced crystal anisotropy and facilitated polarization variation is associated with the high piezoelectric response. Furthermore, microscopic studies by TEM highlight a heterogeneous ferroelectric domain configuration generated by a small local structural distortion, which is also beneficial for the high piezoelectric performance in the proposed ternary piezoelectric systems. The design process of ternary perovskite solid solutions with a wide morphotropic phase boundary region and small structural distortion may be enlightening for the exploration of other high-performance polynary piezoelectrics.

The piezoelectricity of 2D Janus ZnBrI: Multiscale prediction

The piezoelectric properties of two-dimensional (2D) Janus ZnBrI are predicted by the multiscale method. Based on the density functional theory, the electronic properties and piezoelectric coefficients of 2D Janus ZnBrI are calculated. It is found that the 2D Janus ZnBrI has a large in-plane piezoelectric coefficient d11, up to 145.85 pm/V, which is about 40 times that of 2D 2H-MoS2. Based on the finite element method and multi-physical field simulation, the large piezoelectric response of 2D Janus ZnBrI is shown intuitively. Based on the nonequilibrium Green's function, the device model of metal-semiconductor-metal is established, and the I-V response of the device model is calculated, which shows the modulation of piezoelectric effect on tunneling current. The simulation results show that 2D Janus ZnBrI is a 2D piezoelectric material with application potential. This multiscale prediction method can comprehensively predict other 2D piezoelectric materials.

Coexistence of Semiconducting Ferromagnetics and Piezoelectrics down 2D Limit from Non van der Waals Antiferromagnetic LiNbO3-Type FeTiO3.

Stable two-dimensional (2D) ferromagnetic semiconductors (FMSs) with multifunctional properties have attracted extensive attention in device applications. Non van der Waals (vdW) transition-metal oxides with excellent environmental stability, if ferromagnetic (FM), may open up an unconventional and promising avenue for this subject, but they are usually antiferromagnetic or ferrimagnetic. Herein, we predict an FMS, monolayer Fe2Ti2O9, which can be obtained from LiNbO3-type FeTiO3 antiferromagnetic bulk, has a moderate band gap of 0.87 eV, large perpendicular magnetization (6 μB/fu) and a Curie temperature up to 110 K. The intriguing magnetic properties are derived from the double exchange and negative charge transfer between O_p orbitals and Fe_d orbitals. In addition, a large in-plane piezoelectric (PE) coefficient d11 of 5.0 pm/V is observed. This work offers a competitive candidate for multifunctional spintronics and may stimulate further experimental exploration of 2D non-vdW magnets.

A Comprehensive Review on Piezoelectric Polymeric and Ceramic Nanogenerators

Piezoelectric nanogenerators (PNGs) have recently received significant attention because of their great potential for harvesting electricity from wasted mechanical energy resources. In spite of many studies on piezoelectric energy harvesters, a comprehensive review that summarizes alternative types of piezoelectric materials is yet to be reported. This article categorizes piezoelectric materials into two types: piezoelectric perovskite and wurtzite micro‐/nanostructures ceramics and ferroelectric polymers and compares their energy harvesting capabilities and piezoelectric properties. Piezoelectric inorganic materials with a perovskite structure, such as lead magnesium niobate−lead titanate (PMN−PT,d33 = 2500 pCN−1) and lead zirconate titanate,d33 = 500–600 pCN−1) PNGs, generate the highest output voltage and current density among all piezoelectric materials. However, the piezoelectric coefficientd31(−28 to ≈−69 pC N−1) of PMN−PT is lower than PZT (−175 pC N−1) and its toxicity and expensive fabrication process have limited its utilization. Cellular polypropylene (PP) as a ferroelectret polymer offers a high piezoelectric coefficientd33(250−1400 pC N−1), although theird31is lower than piezoelectric poly(vinylidene fluoride) (PVDF) polymer. Piezoelectric natural polymers such as cellulose (d33≈ 8−28 pC/N, silk (d33≈ 0.3−0.8 pC/N, and collagen (d33 ≈ 22 pC/N are also introduced for bio‐PNG applications to tackle environmental problems. There is still a research gap on rationally designed self‐powered, wearable, stretchable, and biocompatible PNGs with high and controllable energy conversion efficiency.

Significant performance enhancement of Nd-doped Pb(In0.5Nb0.5)O3–PbTiO3 ferroelectric crystals

This study presents Nd-doped PIN-0.33PT single crystals. The enhanced piezoelectric d33 and electromechanical coupling coefficient k33 are 2100 pC/N and 91%, which are 80% and 5.8% higher than those of the virgin PIN-0.33PT single crystals (1160 pC/N and 86%).

A piezoelectric quantum spin Hall insulator VCClBr monolayer with a pure out-of-plane piezoelectric response.

The combination of piezoelectricity with a nontrivial topological insulating phase in two-dimensional (2D) systems, namely piezoelectric quantum spin Hall insulators (PQSHI), is intriguing for exploring novel topological states toward the development of high-speed and dissipationless electronic devices. In this work, we predict a PQSHI Janus monolayer VCClBr constructed from VCCl2, which is dynamically, mechanically and thermally stable. In the absence of spin orbital coupling (SOC), VCClBr is a narrow gap semiconductor with a gap value of 57 meV, which is different from Dirac semimetal VCCl2. The gap of VCClBr is due to a built-in electric field caused by asymmetrical upper and lower atomic layers, which is further confirmed by the external-electric-field induced gap in VCCl2. When including SOC, the gap of VCClBr is increased to 76 meV, which is larger than the thermal energy of room temperature (25 meV). The VCClBr is a 2D topological insulator (TI), which is confirmed by Z2 topological invariant and nontrivial one-dimensional edge states. It is proved that the nontrivial topological properties of VCClBr are robust against strain (biaxial and uniaxial cases) and external electric fields. Due to broken horizontal mirror symmetry, only an out-of-plane piezoelectric response can be observed, when a biaxial or uniaxial in-plane strain is applied. The predicted piezoelectric strain coefficients d31 and d32 are -0.425 pm V-1 and -0.219 pm V-1, respectively, and they are higher than or compared with those of many 2D materials. Finally, Janus monolayer VCFBr and VCFCl (dynamically unstable) are also constructed, and they are still PQSHIs. Moreover, the d31 and d32 of VCFBr and VCFCl are higher than those of VCClBr, and the d31 (absolute value) of VCFBr is larger than one. According to out-of-plane piezoelectric coefficients of VCXY (X ≠ Y = F, Cl and Br), CrX1.5Y1.5 (X = F, Cl and Br; Y = I) and NiXY (X ≠ Y = Cl, Br and I), it is concluded that the size of the out-of-plane piezoelectric coefficient has a positive relation with the electronegativity difference of X and Y atoms. Our studies enrich the diversity of Janus 2D materials, and open a new avenue in the search for PQSHI with a large out-of-plane piezoelectric response, which provides a potential platform in nanoelectronics.