Cutoff Frequency Fc Research Articles

Impact of self-heating on geometric variations in nano-ribbon FET: Analog/RF perspective

In recent technology, Nano Ribbon FET (NR-FET) is an emerging device due to its enhanced effective width than other FET devices. In this paper, the electrical parameters including self-heating effect (SHE) for NRFET is presented. The drain current (ID), transconductance (gm), transconductance generation factor (TGF = gm/ID), and cut-off frequency (fc) are highlighted in NRFET with/without considering SHE. It is observed that various electrical parameters are degraded by significant amount in the presence of SHE for NR-FET. The gm is changed from 1.45 to 0.725 mS in presence of SHE, whereas, fc is reduced to 2.47 THz from 4.5 THz in presence of SHE for NRFET. Further, the effect of variation in width and height of ribbon in NRFET on e-density, drain current, and transconductance are reported with/without including SHE. Result reveals that with increased width/height, the performance of NRFET is enhanced and this is further degraded with including SHE. Finally, the important parameters like lattice temperature and thermal resistance (Rth) are calculated for NRFET. The calculated lattice temperature and Rth are 375.2 K and 1.534 K/μWatt, respectively.

Design of Miniaturized 90-Degree Hybrid Coupler with Wide Rejection Band Using Neural Network.

In this paper, a 3 dB 90-degree hybrid coupler with size reduction and harmonics rejection was designed. In the proposed coupler structure, four simple low-pass filters (LPFs) were applied. An artificial neural network (ANN) was used to determine the dimensions of the applied LPFs based on EM simulation data. The applied ANN model could also provide the desired LPF parameters, including the cut-off frequency (fc), bandwidth (BW), and insertion loss (IL). Designing an applied LPF involves complex mathematical calculations and simulations to optimize parameters. However, by utilizing neural networks, the design process can be significantly streamlined and automated. Neural networks have the ability to learn complex patterns and relationships within data, making them well suited for optimizing the performance of applied components. The proposed 90-degree hybrid coupler works correctly at 1800 MHz and has a small size of 16.6 mm × 15.15 mm, which provides a 73% size reduction compared to a normal 1800 MHz coupler. The designed coupler not only decreases the circuit size but also provides a wide rejection band from 4.8 GHz to 11.2 GHz, which suppresses the second to sixth harmonics. The insertion loss parameter of this 90-degree hybrid coupler is less than 0.1 dB at the working frequency, which shows the superior performance of the proposed coupler.

Design, optimization, and performance analysis of GaP/Si heterojunction Fin-TFET with MoS2 nanoribbon channel

This article presents the design and optimization of GaP/Si heterojunction Fin-TFET with a MoS2 channel. The elevated fin structure, coupled with ultrathin MoS2 layers and the tuneable bandgap properties of MoS2 material, significantly enhances gate control over the channel and improves device performance. Additionally, the GaP/Si heterojunction with a heavily doped n-type source pocket leads to a narrow barrier junction, promoting Band-to-Band Tunneling (BTBT). The optimized Fin-TFET boasts exceptional electrical characteristics: a high ON-current (7.72 × 10−5 A/μm), an ultra-low OFF-current (4.16 × 10−17 A/μm), and leading to an outstanding ION/IOFF ratio (7.23 × 1012). Furthermore, the device demonstrates a steep subthreshold slope (SS) of 6 mV/dec (point) and 16.8 mV/dec (average), alongside impressive analog performance with a transconductance (gm) of 2.75 × 10−4 S, a cut-off frequency (fc) of 1.3 × 1012 THz, and a gain-bandwidth product (GBP) of 0.17 × 1012 THz. The entire analysis was conducted utilizing the Sentaurus TCAD-3D simulation tool.

Investigation on electrical parameters between single and double material gate nanoribbon FETs including trap distributions

The presence of multiple interface of gate-oxide and semiconductor in Nano-ribbon FET (NR-FET) causes several defects and leads to the degraded electrical parameters. In this regard, the electrical parameters in the existence of interface trap charges (ITCs) for single material gate (SMG) and double material gate (DMG) NR-FETs are extracted using Technology Computer Aided Design (TCAD) simulator. The effect of Uniform/Gaussian ITCs at the oxide and semiconductor interface on drain current, electrostatic potential, ON current, OFF current, and threshold voltage are reported for these devices. The RF/analog performance like transconductance (gm), gate capacitance (Cgg), and cut-off frequency (fc) are reported for these structures in presence of non-ideal trap distributions. Moreover, the linearity parameters like higher order harmonics in gm (gm2 and gm3), voltage intercept points (VIP2 and VIP3), input intercept power (IIP3), and intermodulation distortion (IMD3) are highlighted for these structures. It is seen that DC, RF/analog, and linearity performance of both the NRFETs are significantly affected by Uniform and Gaussian distribution of ITCs. However, the electrical parameters in DMG NRFET is more immune to ITCs than SMG NRFET. Moreover, both the devices have ON state current in the order of 10−3 A, fc of order THz, and improved linearity behaviour in the presence of ITCs, which indicates sustainability of these devices including ITCs.

Low power CMOS Gm-C based low pass filter for front end neural signal processing

The sub 100 µV voltage levels and sub 100 Hz frequency range makes the processing of most popular signal electroencephalograph (EEG) for brain functionality analysis, a complex task. The low frequency content of EEG (useful signals below 70 Hz) is commonly used for diagnosis of various brain related disorders making low-pass filter (LPF) a key block in front-end processing as noise reduction and resolution enhancement is crucial for precise recovery of these information. This paper is aimed to design reduced transconductance (Gm) based low power and small area CMOS LPF with cutoff frequency (fc) around 70 Hz. The proposed design is simulated using Cadence virtuoso tool and gives cut-off frequency of 72.958 Hz with low output noise of 3.0609 µV/√Hz and power consumption of 264.060 nW at operating voltage of 0.4 V. The simulation results show linearity of performance over -40 to 100 °C. Layout of circuit takes up area of 86.74×81.21 µm and post layout simulation shows 5% variation in power consumption as compared to pre layout simulations.

A technique for the passband and stopband control of wideband band-pass substrate integrated waveguide (SIW) filters designed with elliptic stepped impedances

In this paper, a design technique based on a stepped impedance synthesis is proposed for the first time for the passband and stopband control of band-pass filters in substrate integrated waveguide (SIW) technology. The structure of the band-pass filters is implemented by means of elliptic patterns etched on the top side of the SIW, which work as impedance inverters. The design method consists of previously mapping the height of the elliptic patterns and the phase shift (cut-off angle) of the SIW lines, connected to the input and output ports of the ellipses, as a function of the passband and stopband characteristics of various stepped impedance SIW filters, to then select the design parameters of the band-pass SIW filter that achieve the desired frequency response. This new approach is applied to the design of two fourth-order Chebyshev stepped impedance band-pass SIW filters with different passband and stopband characteristics. One of the band-pass SIW filters is characterized by a fractional bandwidth FBW1 = 14.5% and a spurious-free range SFR1 = 2.8 GHz, while the other filter has a FBW2 = 22.3% and a SFR2 = 1.55 GHz. Both band-pass filters were designed with a SIW TE10 mode cut-off frequency and a higher passband cut-off frequency fixed at fcTE10 = 2.85 GHz and fc,H = 3.9 GHz, respectively. Electromagnetic (EM) simulations showed that the lower passband cut-off frequency fc,L can vary with respect to fc(TE10) by 13.6% and that the first spurious frequency can appear higher than fc,H by 69.3%. The measurement results agreed well with the EM simulations, thus confirming that this method can be useful to design high-performance wideband Chebyshev stepped impedance band-pass SIW filters with a high degree of control on the passband and stopband characteristics.

Design and analysis of highly selective ultrawide stopband lowpass filter using lumped and distributed equivalent circuit models

AbstractAn ultrawide stopband lowpass filter is reported using three stepped impedance resonators with high selectivity. The filter extends the stopband frequency range and attenuation, and two quarter‐wave open stubs and three circular ground slots are introduced. The lumped and distributed equivalent models are derived and analyzed. The corresponding results are validated experimentally in a fabricated prototype. The prototype lowpass filter has a 3 dB cutoff frequency (fc) of 2.9 GHz, and the stopband is extended up to 35 GHz (12.07fc), with an attenuation level better than 20 dB throughout. The passband‐to‐stopband transition (3 dB–20 dB) bandwidth is 0.18 GHz, and the roll‐off factor is 135 dB/GHz at 30 dB. The insertion loss is 0.3 dB at 1.6 GHz. The normalized circuit size of the proposed filter with respect to the guided wavelength is 0.04.

Spatial and spectral characteristics in realizations of broadband terahertz spectroscopy on a subwavelength scale

In this work, we take aim at the fundamental challenge for realizations of broadband terahertz (THz) spectroscopy on a subwavelength scale. We introduce apertured THz microjets in this effort to resolve the fundamental limits of spatial resolution and spectral bandwidth. The THz microjets are formed as intense foci at the rear of engineered (microcomposite) spheres and are coupled through subwavelength (circular) apertures. Such coupling enables effective transmission of THz power through samples with broad spectral bandwidths and fine spatial resolutions. We show that the apertures function as high-pass filters, with their diameter d enabling strong transmission above a cutoff frequency fc. Our theoretical and experimental results reveal that the values for d and fc are prescribed by a fixed spatial-spectral product dfc, whereby reductions in d (to improve the spatial resolution) can raise fc into the targeted spectrum (at the expense of spectral bandwidth). We use this understanding to demonstrate broadband (0.3–0.7 THz) THz spectroscopy of lactose at the subwavelength (365 µm) scale. These results for apertured THz microjets represent a 20-fold improvement in spatial resolution over analogous apertured THz plane waves. Overall, our findings show promise for studies of carcinogenesis, pathogenesis, and the like.

Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning.

Graphene, with superior electrical tunabilities, has arisen as a multifunctional insertion layer in vertically stacked devices. Although the role of graphene inserted in metal-semiconductor junctions has been well investigated in quasi-static charge transport regime, the implication of graphene insertion at ultrahigh frequencies has rarely been considered. Here, we demonstrate the diode operation of vertical Pt/n-MoSe2/graphene/Au assemblies at ~200-GHz cutoff frequency (fC). The electric charge modulation by the inserted graphene becomes essentially frozen above a few GHz frequencies due to graphene quantum capacitance-induced delay, so that the Ohmic graphene/MoSe2 junction may be transformed to a pinning-free Schottky junction. Our diodes exhibit much lower total capacitance than devices without graphene insertion, deriving an order of magnitude higher fC, which clearly demonstrates the merit of graphene at high frequencies.

Simulation study of n+ pocket step shape heterodielectric double gate tunnel FET for switching and biosensing applications

In this article, an n+ pocket step shape heterodielectric double gate Tunnel TFET (SSHDDG-TFET) is designed for high frequency and biosensing applications. A calibration of TCAD model with fabricated data is presented to achieve accurate results from the simulator. The effect of pocket doping concentration on transconductance (gm), cut-off frequency (fc), and gain bandwidth product (GBW) are highlighted for n+ pocket SSHDDG TFET. In consecutive step, a biosensor is designed using the proposed TFET to detect the wide range of biomolecules and the sensitivity is extracted in the existence of neutral as well as charged biomolecules. The sensitivity is analyzed considering the partially filled cavity of this biosensor. The various prominent results in terms of analog and biosensing applications for the considered TFET are drain current sensitivity (SI,DS) of 3.21 × 1010, 3.6 × 1013, and 9.5 × 107 for neutral, positive (Nf = 1e12 cm−3), and negative charged biomolecules (Nf = -1e12 cm−3), respectively, at k = 12, maximum gm of order 10−4 S, and fc is of order 1010 Hz.

The Design and Investigation of the Low-Pass Filter with High Selectivity and Ultra-Wide Stopband

In this work, an ultra-wide stopband low-pass filter (LPF) is proposed using tapered step impedance resonators. The distributed equivalent of the proposed step impedance LPF is extracted, analyzed, and legitimated with simulated and fabricated results. The fabricated prototype has a 3 dB cut-off frequency (fc) of 2.92 GHz and an ultra-wide stop band extended up to 25.7 GHz (8.8fc) with an attenuation level of >20 dB. The transition bandwidth (from 3 to 20 dB) is 0.20 GHz and the roll-off factor is 112 dB/GHz (a reference to 30 dB). The passband insertion loss is 0.32 dB at 1.5 GHz and the normalized circuit size of the filter is 0.055.

Investigation on RF/Analog Performance in SiGe Pocket n-Tunnel FET

In this paper, a SiGe pocket n-TFET is designed and its electrical performance is extracted using a TCAD simulator. Initially, a comparative study of input characteristics among conventional TFET (Device 1), intrinsic SiGe pocket TFET (Device 2), and doped SiGe pocket TFET (Device 3) is presented. It is seen that Device 2 shows an improved switching ratio (ION/IOFF) compared to other Devices. Furthermore, the RF/analog performance such as transconductance (gm), output conductance (gd), intrinsic gain (gm/gd), gate capacitance (Cgg), cut-off frequency (fc), transconductance frequency product (TFP), gain frequency product (GFP), and gain transconductance frequency product (GTFP) is reported for the variation in x of SiGe pocket from 0 to 1. The eBTBT rate and electron density are plotted for the variation in x of SiGe pocket Vertical TFET. The results reveal that the increase in x leads to an improvement in RF/analog performance and the tunneling rate in SiGe pocket Vertical TFET.

A micromachined ultra‐wide stopband lowpass filter based on stepped impedance resonator loaded T‐shaped structure

This article presents an additively manufactured micro-coaxial lowpass filter with ultra-wide stopband suppression. To achieve a wide stopband response, two-stage stepped impedance resonator loaded T-shaped structures are used to substitute the low impedance transmission lines in the lowpass filter prototype to generate extra transmission zeros in the stopband. Shunt open-ended stubs are introduced to the structure in flexible positions to further strengthen the suppression at specific frequency points. The filter is designed with 22 GHz passband and the 20 dB stopband suppression bandwidth over 300 GHz. The micro-coaxial lowpass filter structure was fabricated based on additive metal micro-manufacturing process with the rectangular cross-section dimensions of 0.5 mm × 0.5 mm (300 GHz cutoff frequency). To facilitate the measurement, pair of coax-to-CPW transitions are added at the input/output ports. The measurement results show excellent agreement from DC-110 GHz (limitation of the measurement device), with insertion loss of 1.05 dB at the cutoff frequency fc, which validates the design.

(Digital Presentation) Optimization of MIM Rectifiers for Terahertz Rectennas

There is a significant demand for harvesting renewable infrared (IR) energy from unused heat sources. The rectifying antenna (rectenna) device has the ability to capture alternating current (AC) IR radiation and rectify it into usable direct current (DC) electricity. Metal-Insulator-Metal (MIM) diodes have shown to be the most prominent contenders for rectenna applications. This is due to their ultra-fast current transport mechanism in the femtosecond range by means of quantum mechanical tunnelling. Optical rectification at 28.3 THz has recently been demonstrated by rectenna devices based on MInM diodes using Au/Al2O3/Ti [1] and Ti/TiO2/ZnO/Al [2] configurations. Although the results are promising, the overall conversion efficiency is quite low, 2.05 × 10-14 [1], mainly due to the poor rectification properties of the diodes. Other recent research [3-5] has focused on the combination of stoichiometric and non-stoichiometric oxides with the aim of engineering the barrier heights to achieve low dynamic resistance (R0 ), high responsivity (β0 ) and asymmetry (η0 ) at zero-bias where the results are very promising for self-biased rectennas. The most recent experimental breakthrough was achieved by Ni/NiO/AlOx/CrAu bowtie rectennas that feature a device area of 0.035 µm2, low R0 of 13 kΩ and high β0 of 0.5 A/W. The results show that 5.1% coupling efficiency and 1.7 × 10−8% power conversion efficiency can be achieved with correct optimization of oxide stack. Furthermore, the most recent theoretical study [6] shows that the β0 of the MI2M diodes can be further improved to ~ 5 A/W by keeping the impedance match between the diode and the antenna at around 100 Ω. The proposed Ti/1 nm TiO2/1 nm Nb2O5/Ti rectenna design can achieve diode cut-off frequency (fc ) of 17 THz and resistance × capacitance (RC) time constant of 9 fs assuming the diode area of 0.01 µm2. Liverpool group has demonstrated recently [7,8] the effect of resonant tunnelling in non-cascaded (Al/Ta2O5/Nb2O5/Al2O3/Al) and cascaded (Al/Nb2O5/Al2O3/Ta2O5/Al) triple insulator diode structures with an oxide thickness ratio of 1:3:1 (in nm) deposited by atomic layer deposition (ALD). The diodes exhibit superior β = 5 A/W at 0.2 V and η = 12 at 0.1 V, with a drawback of high R0 due to high barrier heights between the metal/oxide layers.In this paper, we further optimize the MInM diode configurations so that the metal/oxide barrier is significantly lowered to ~ 0.1 eV. This is achieved by using the combinations of rectenna contender oxides such as Al2O3, NiO and ZnO that have high electron affinity and low dynamic permittivity [9]. Ultra-thin (≤ 5 nm) insulating layers were fabricated using radio frequency (RF) magnetron sputtering and ALD. Metal electrodes were deposited by thermal evaporation and RF sputtering using shadow mask, photolithography and nanolithography processes. The device areas range from 100 µm × 100 µm, 1 µm × 1 µm and 100 nm × 100 nm depending on the patterning process to observe the effect of device scaling on the conduction mechanisms and direct current (DC) rectification properties. The deposited oxide layers were measured by variable angle spectroscopic ellipsometry (VASE) to ascertain their thickness, uniformity and optical constants. DC current voltage measurements were performed on fabricated diodes to evaluate key rectification parameters such as R0 , β0 , η and non-linearity (fNL ) around zero-bias. Complementary theoretical calculations were performed to substantiate the experimental results and allow comparison of different MInM diode configurations such as NiO/Al2O3, ZnO/Al2O3, NiO/ZnO and NiO/ZnO/Al2O3. This work shows that the coupling efficiency at IR cut-off frequencies can be improved by optimizing the barriers in MInM rectifiers. References. [1] Jayaswal et al.,Materials Today Energy, 7, 1-9 (2018); [2] Elsharabasy et al., IEEE J. Photovoltaics, 9, 1232, (2019); [3] Matsuura et al., Sci. Rep. 9, 1-7 (2019); [4] Weerakkody et al., ACS Appl. Nano Mater. 4, 2470–2475 (2021); [5] Belkadi et al., Nat. Commun., 12, 1–6 (2021); [6] Elsharabasy et al., Results Mater. 11, 100204 (2021); [7] Mitrovic et al., ECS Trans. 72, 287 (2016); [8] Tekin et al., Solid State Electron. 185, 108096 (2021); [9] Mitrovic et al., Materials, 14, 5218 (2021).

Evaluation of conductivity and piezo-impedance response of VACNTs/PDMS nanocomposite-based strain sensors under small deformations

The vertically aligned multi-walled carbon nanotubes (VACNTs) / polydimethylsiloxane (PDMS) nanocomposite-based strain sensors presented in this study show different behavior depending on catalyst concentrations for VACNT growth. Under static tensile load, the sensor with lower catalyst concentration shows a high gauge factor (GF~1400), whereupon tunneling effect is the mechanism that dictates the sensitivity. For higher concentrations, the GF decreases (GF~40) and shows an ohmic conduction. Morphological examinations showed VACNTs are homogeneously and randomly distributed as clusters with CNT bridging in the PDMS polymer matrix. Based on dielectric impedance (DI) and direct current (DC) electrical analysis, it was possible to identify that cut-off frequency (fc) increases with VACNTs concentration. Cut-off frequency can also define high sensitivity VACNT sensors with lower VACNT density. When compared with dispersed MWCNT sensors, VACNTs have a reduced fc due to the larger internal resistance variation associated with the high tunneling effect. This effect associated with the high sensitivity of the VACNT/PDMs sensors makes it a key factor to understand the mechanisms responsible for increasing the sensitivity and manufacturing of high GF nanocomposite stretchable sensors.

14GHz Schottky Diodes Using a p-Doped Organic Polymer.

The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes hinder their deployment in emerging radio frequency (RF) electronics. Here, these limitations are overcome by combining self-aligned asymmetric nanogap electrodes (≈25nm) produced by adhesion lithography, with a high mobility organic semiconductor, and RF Schottky diodes able to operate in the 5G frequency spectrum are demonstrated. C16 IDT-BT is used, as the high hole mobility polymer, and the impact of p-doping on the diode performance is studied. Pristine C16 IDT-BT-based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (fC ) of >100and 6GHz, respectively. This extraordinary performance is attributed to the planar nature of the nanogap channel and the diode's small junction capacitance (<2pF). Doping of C16 IDT-BT with the molecular p-dopant C60 F48 improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic fC of >100and ≈14GHz respectively, while the DC output voltage of an RF rectifier circuit increases by a tenfold. Ourwork highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large-area RF electronics of the future.

Method to Improve the Roll-Off and Stopband Response in Low Pass Filter Using Patch Resonators for Modern Wireless Communication

In this paper, several types of patch resonators design procedure are proposed and analysed to improve the roll-off and stopband response in low pass filter. The proposed patch resonators consist of T-shaped patch resonator (TS-PR) that provides instant sharp roll-off and also dual folded T-shaped resonator (DFTS-PR) that improves the roll-off of the previous TS-PR. The transmission zeros of the resonators can be adjusted by varying length and width of high and low impedance microstrip lines. It has been shown that the final design of the patch resonators provides sharp roll-off and acceptable stopband bandwidth by adopting both TS-PR and DFTS-PR. The proposed low pass filter with 3-dB cut-off frequency (fc ) of 5.26 GHz exhibits excellent roll-off rate of 82.2 dB/GHz from 5.5 GHz to 11.7 GHz. Moreover, the transition of the proposed filter is 0.45 GHz which contributes to a sharper transition band from passband to stopband.

Ultra-wide stopband HTS LPF with closed-loop cross-coupled microstrip structure

A compact high-temperature superconducting (HTS) low-pass filter (LPF) with an ultra-wide stopband and a sharp transition band is designed by integrating the fifth-order low-pass filter branch and closed loop cross-coupled (CLCC) microstrip structure. The fifth-order low-pass filter consists of two radial-stubs (RSs), one butterfly-shaped stub (BSs), and two T-shaped stubs (TSs), which can introduce five transmission zeros (TZs) with independently controllable frequency and position, so as to obtain good sideband suppression or upper stopband characteristics. The CCLC microstrip circuit is composed of cascaded high and low impedance microstrip lines, which can widen the width of the upper stopband and realize the ultra-wide stopband characteristic. The operating mechanism of the fifth-order LPF resonator and the CLCC microstrip structure are analyzed by theLCequivalent circuit models. The implemented LPF on a 0.5-mm thick MgO wafer with double-sided YBCO films demonstrates 1-dB cut-off frequency (fc) at 2 GHz and 0.12 GHz narrow transition bandwidth from −1dB to −40 dB. The measured results show a 30-dB harmonic suppression from 1.08fc to 11.7fc i.e., above 23 GHz, a steep roll-off rate of 326 dB/GHz, an in-band insertion loss (IL) <0.10 dB, and a miniaturized size of 0.24λgc × 0.08λgc (λgc is the guided wavelength at the cut-off frequency).

Preparation and operating characteristics analysis for high-speed PbPc organic thin film transistors with cut-off frequency of 77 kHz

In this work, we fabricated vertical organic thin film transistors (VOTFTs) with lead phthalocyanine (PbPc) as the active layer and analyzed the operating characteristics and current transfer mechanism of VOTFTs. The results show that the quiescent output current of VOTFTs is not saturated, and the output current can be modulated by requiring different gate voltages. The switching parameters of the VOTFTs are ton = 2.5 μs, toff = 3.5μs, and the switching characteristic time reaches the microsecond level. When a sine wave dynamic signal is applied to the gate electrode, the cut-off frequency fc = 77 kHz. The experimental results demonstrate that short channel and vertical structure of VOTFTs make up for organic semiconductor material defects of low carrier mobility and realize high speed and low driving voltage of organic devices. Electric field intensity of depletion layer in the gate region is 7×107V/m, and high electric field intensity makes carriers tunneling become the major transport mode. The tunnel injection model is used to analyze the carrier transport inside the transistor. The results show that the operating current of the transistor conforms to the tunneling effect theory.

Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET

The diffusion of doping concentration in source/drain regions through ion implantation technique extents to the channel, which decreases the inversion portion of channel and results in variation of device behavior. In this paper, by merging the advantages of Ge-source TFET and dual material gate (DMG) TFET, a new device named as Ge-source dual material double gate (DMDG) TFET is proposed. We have investigated DC parameters like drain current vs gate bias, drain current vs drain bias, subthreshold swing (SS), and current ratio (ION/IOFF) by changing the lateral straggle parameter (σ) from 0 to 5 nm through TCAD device simulator in proposed TFET. The RF/analog behavior like transconductance (gm), output conductance (gd), intrinsic gain (gm/gd), total gate capacitance (Cgg), cut-off frequency (fc), transconductance generation factor (TGF), transconductance frequency product (TFP), gain frequency product (GFP), and gain transconductance frequency product (GTFP) are reported for different σ values in proposed TFET. It is found that both DC and RF/analog figure of merits are a function of σ. It is perceived that ION as well as RF/analog characteristics are improved, whereas, short channel parameter degrades with increase in σ. Finally, the effect of σ on noise performance and s-parameters are highlighted in proposed device.