Impact of self-heating on geometric variations in nano-ribbon FET: Analog/RF perspective

Abstract

In recent technology, Nano Ribbon FET (NR-FET) is an emerging device due to its enhanced effective width than other FET devices. In this paper, the electrical parameters including self-heating effect (SHE) for NRFET is presented. The drain current (ID), transconductance (gm), transconductance generation factor (TGF = gm/ID), and cut-off frequency (fc) are highlighted in NRFET with/without considering SHE. It is observed that various electrical parameters are degraded by significant amount in the presence of SHE for NR-FET. The gm is changed from 1.45 to 0.725 mS in presence of SHE, whereas, fc is reduced to 2.47 THz from 4.5 THz in presence of SHE for NRFET. Further, the effect of variation in width and height of ribbon in NRFET on e-density, drain current, and transconductance are reported with/without including SHE. Result reveals that with increased width/height, the performance of NRFET is enhanced and this is further degraded with including SHE. Finally, the important parameters like lattice temperature and thermal resistance (Rth) are calculated for NRFET. The calculated lattice temperature and Rth are 375.2 K and 1.534 K/μWatt, respectively.