Current-voltage Characteristics Research Articles

DC current–voltage and impedance spectroscopy characterization of nCdS/pZnTe HJ

This paper describes the electrical and dielectric behavior of the nCdS/pZnTe HJ by current–voltage, capacitance–voltage characteristics, and impedance spectroscopy in a temperature interval 220–350 K. A microcrystalline p-ZnTe layer and n-CdS were grown on glass/ZnO substrate by closed space sublimation method. As frontal contact to CdS, the transparent ZnO and as a back contact to ZnTe, silver conductive paste (Ag) treated at 50 °C in vacuum were used. The current–voltage results of nCdS/pZnTe HJ show a rectifying behavior. The junction ideality factor, barrier height, and series resistance values were extracted from the rectifying curves at different temperatures. The built-in voltage, carrier concentration and depletion width were obtained from the capacitance–voltage measurements. Analysis of the J–V–T and C–V–T characteristics shows that the thermionic emission and recombination current flow mechanisms dominate in the nCdS/pZnTe HJ. The dielectric study reveals that the experimental values of the AC conductivity, dielectric constant, dielectric loss, the imaginary part of the electric modulus are found to be very sensitive to frequency and temperature. The dielectric constant and dielectric loss are observed to be high at the low frequency region. The increase in the values of electric modulus with the frequency implies an increase in the interfacial polarization at the interface of nCdS/pZnTe HJ. Jonscher’s universal power law shows that with increasing frequency, AC conductivity increased. The results conductivity show that the ionic conductivity and interfacial polarization are the main parameters affecting the dielectric properties of the device when the temperature changes.

Strain and piezoelectric control of electronic and photonic properties of p − n diodes

Piezoelectricity is a well-known effect in a vast number of technologically important insulators and semiconductors and exists in 20 out of the 32 three-dimensional crystal classes. The piezoelectric effect is the driving mechanism behind several classical sensors and transmitters, and also most recently, in many nanodevices. Zhong Lin Wang coined the fields piezotronics and piezo-phototronics where the piezoelectric effect plays a dominant role. Piezoelectricity couples in a linear fashion mechanical strain to electrical fields and vice versa. In solids, there is another linear coupling between strain and the electric potential, known as the deformation potential effect. While linear in its coupling nature, this effect does not require the solid to be non-centrosymmetric in contrast to the piezoelectric effect. Moreover, the deformation potential effect is quantitatively huge and leads to changes in the conduction and valence band edges of III–V and II–VI materials of, typically, 50–100 meV in the presence of 1 % strain. Therefore, the deformation potential effect is essential to determine the electronic and photonic properties of bulk and nanostructure semiconductors in the presence of strain. In this work, we compute the relative importance of piezoelectricity and the deformation potential effect in the presence of lattice mismatch and external strain. We choose p − n junctions of ZnO/GaN structures but anticipate that the general conclusions can be carried over to other material structures. The main result of the present work is that both the inclusion of the deformation potential effect and piezoelectricity is crucial to correctly compute the effect of strain on p − n junction current–voltage curves and photonic properties. In our analysis of wurtzite heterostructures, the spontaneous polarization effect is also included but this effect appears to play a minor role for electronic and photonic properties.

Modeling temperature dependent Ni/β-Ga2O3 Schottky barrier diode interface properties

A TCAD simulator is used to model measured current–voltage characteristics of Ni/β-Ga2O3 Schottky barrier diode (SBD), deposited by E-beam evaporation, at room temperature. A good fit was obtained when the Ni workfunction, Ni/β-Ga2O3 interface traps concentrations and Si-doped β-Ga2O3 surface electron affinity variation were taken into consideration. Temperature dependent J-V characteristics were investigated and a good agreement at low voltage was obtained. However, the simulated current at high voltage (series resistance domain) was higher than measurement while both series resistance (Rs) and on-resistance (Ron) for measurements were higher than their simulations counterparts. In order to overcome this disagreement, the effect of Si-doped β-Ga2O3 surface electron affinity on the SBD at each temperature was studied. This is due to the fact that the electron affinity can be affected by trap levels located above conduction band maximum (CBM) as reported in the literature. The surface electron affinity decreased with increasing temperature because trap levels located above CBM were activated. A better agreement was achieved.

Surface and interface chemistry of bromine–methanol‐etched Cd0.9Zn0.1Te crystals

Chemical polishing or chemo‐mechanical polishing is crucial as a last step of surface preparation to remove the damaged layer and contaminants from the surface of CdZnTe crystals. The bromine–methanol solution is widely used for this purpose. However, bromine–methanol solution enriches the surface with Te and results in poor performance of CdZnTe crystals. In this study, the effect of the chemical polishing with 5% bromine–methanol solution on the surface and at the interface is investigated and it is demonstrated that etching duration strongly influences surface stoichiometry and interface contaminants. The evolution of the surface topography with etching and chemical changes are presented. It is shown that after 90 s etching/polishing, subsurface damage is removed and Te enrichment is minimum. Moreover, interface layer thickness is the smallest for 90 s etching duration. It is presented that further increase in the etching duration disturbs the surface stoichiometry and interface depth. It also calculated that 90 s of etching shows low interface barrier and symmetrical current–voltage curve.

Advancing Frontiers: A High-Impact Study on the Synthesis, Characterization, and Superior Device Performance of AlCr2O4/MXene Nanocomposites

Here we present the fabrication of a multilayer resistive memory device (ReRAM) utilizing AlCr2O4/MXene nanocomposite. Comprehensive investigations into the structural and morphological properties of the nanostructures were conducted using various characterization techniques. The fabricated device was tested by measuring I-V characteristics at different current applications which encompasses all previous results. The band gap value for the nanocomposite was reduced to 2.42 eV while that for AlCr2O4 was measured at 3.25 eV via photoluminescence spectrum. Average particle size of the AlCr2O4/MXene nanocomposite was determined to be 25 nm through powder X-ray diffraction analysis. Crystallographic analysis revealed that all crystal peaks conform to the R-3c (167) space group, indicative of a standard hexagonal crystal structure. Energy-dispersive X-ray readings provided further confirmation that all required elements are present in the sample, affirming successful synthesis of the nanocomposite. Notably, the nanocomposite demonstrated exceptional performance as an electrode material in ReRAM, as evidenced by its current-voltage characteristics, making the AlCr2O4/MXene nanocomposite suitable for a wide range of next-generation device applications.

Independently Accessible Dual-Band Barrier Infrared Detector Using Type-II Superlattices

We report a novel dual-band barrier infrared detector (DBIRD) design using InAs/GaSb type-II superlattices (T2SLs). The DBIRD structure consists of back-to-back barrier diodes: a “blue channel” (BC) diode which has an nBp architecture, an n-type layer of a larger bandgap for absorbing the blue band infrared/barrier/p-type layer, and a “red channel” (RC) diode which has a pBn architecture, a p-type layer of a smaller bandgap for absorbing the red band infrared/barrier/n-type layer. Each has a unipolar barrier using a T2SL lattice matched to a GaSb substrate to impede the flow of majority carriers from the absorbing layer. Each channel in the DBIRD can be independently accessed with a low bias voltage as is preferable for high-speed thermal imaging. The device modeling of DBIRDs and simulation results of the current–voltage characteristics under dark and illuminated conditions are also presented. They predict that the dual-band operation of the DBIRD will produce low dark currents and 45–56% quantum efficiencies for the in-band photons in the BC with λc = 5.58 μm, and a nearly constant 32% in the RC with λc = 8.05 μm. The spectral quantum efficiency of the BC for 500 K blackbody radiation is approximately 50% over the range of λ = 3–4.7 μm, while that of the RC has a peak of 42% at 5.9 μm. The DBIRD may provide improved high-speed dual-band imaging in comparison with NBn dual-band detectors.

Physical reservoir application of random network of gold nanoparticles fabricated by multi-step immersion in gold colloidal solution

We fabricated a random network of gold nanoparticles (RN-GNPs) over 12 NiCr/Au electrodes by using a multi-step immersion method, where a sample was immersed in a gold colloid solution three times. Nonlinear current–voltage characteristics due to the Coulomb blockade were observed at 77 K. For demonstration of physical reservoir applications, input–output characteristics of the RN-GNPs were also measured in a one-input, nine-output terminal configuration. Distorted output voltage waveforms were obtained for a sinusoidal voltage input of 100 Hz. The higher-order harmonic components were confirmed in the frequency spectra of the outputs. The waveform reconstruction task and short-term storage capacity estimation were performed by an echo state network model with ridge regression and linear regression, respectively.

Effect of nozzle contamination on microwave discharge cathode performance

An understanding of the degradation mechanism of a microwave discharge cathode is the key to extending the lifetime of microwave ion thruster systems. This study investigates the effect of nozzle contamination by sputtered Ag-polytetrafluoroethylene (PTFE) on microwave discharge cathode performance. The current–voltage characteristics were measured for nominal and contaminated (by PTFE spray with 0.2 µm thick or tape with 0.15 mm thick) cathodes. The contamination thickness and area on the nozzle were varied to investigate the characteristic differences. It was confirmed that the anode voltage increased by 20 V or more in the case of the contaminated cathode. The anode voltage was measured for the sputter-contaminated cathode to evaluate the effect of contamination under more realistic conditions. After 630 h of sputter-contamination operation, it is estimated that sputtered particles were deposited to a thickness of 77 µm at most, and the anode voltage increased by 8 V. The results show that the downstream surface of the nozzle is critical for maintaining cathode performance. The insulating coating formed by the sputtered PTFE may interfere with ion absorption and degrade electron emission capability. A theoretical model based on the extended Brophy model supports these results. This study provides important information for the use of PTFE-based materials around ion thrusters.

Integrated electronic system for FET biosensor assessment based on current-voltage curve tracing

Field-effect transistor (FET) biosensors are pivotal in diverse applications, from environmental monitoring to healthcare diagnostics. Current-voltage (I-V) curve tracing is a powerful method for evaluating FET biosensor behavior, enabling comprehensive analysis of their FET biosensor characteristics. Traditional I-V curve tracing methods often require complex and expensive equipment, limiting their accessibility and practicality for routine sensor assessment. This study aims to develop and demonstrate an integrated electronic system for assessing FET biosensors using I-V curve tracing. The integrated electronic system uses readily available components, including microcontrollers, analog circuitry, and user-friendly software. We developed a compact, low-cost device that generates I-V curves for the FET biosensor. The integrated electronic system successfully generated I-V curves for various FET biosensors. The system demonstrated consistent, reliable performance, portability, and ease of use, making it a practical solution for routine sensor assessment. The average error in measurements using bipolar junction transistors (BJT) and metal-oxide-semiconductor field-effect transistors (MOSFETs) results in 2.62%, and measurements at different pH levels have a sensitivity of 21.6 mV/pH and a linearity of 0.9892. This innovation contributes to the advancement of FET biosensor technology. In the future, the developments should focus on ensuring their accuracy and reliability in various sensor fields.

Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes

Pulsed laser deposition technique is used to grow unintentionally n-type (0001)ZnO layers with high crystalline and morphological qualities on p-type (0001)GaN/sapphire templates. Electroluminescent devices are fabricated on these p–n heterojunctions. Oxygen pressure during growth has been found to influence strongly the crystalline and defect properties of the grown layers, which affect not only the current–voltage characteristics but also the emission properties of the electroluminescent devices. It has been observed that the electroluminescence (EL) spectra have both defects related visible and band-edge related ultraviolet (UV) transition features stemming from both GaN and ZnO sides. The study reveals that UV to visible EL intensity ratio maximizes at an optimum oxygen pressure. The relative contribution of EL originating from ZnO and GaN sides can be tuned by the applied bias, as the bias can control the depletion width and hence the carrier interdiffusion across the junction. This finding thus offers a scope to electrically tune the colour of the emitted light in these devices.

Adaptive Particle Swarm Optimization based improved modeling of Solar Photovoltaic module for parameter determination

Solar Photovoltaic (SPV) panel manufacturers provide a datasheet, which contains key electrical specifications of the SPV module for the user's reference. However, these data alone prove inadequate in anticipating the performance of PV systems under fluctuating atmospheric conditions. The approach put forth in this paper ascertains five parameters of a PV module using information supplied by the manufacturer. This approach considers the impact of solar radiation and cell temperature. The paper outlines the process for determining the parameters of the five-parameter model and establishes a comparison between projected current-voltage curves and manufacturer-provided data. To extract the unknown parameters of a single diode model Adaptive Particle Swarm Optimization (APSO) techniques with barrier constraints was developed. The study investigates both multi-crystalline and mono-crystalline PV module technologies to validate the efficacy of the proposed method. Results demonstrate that the proposed technique, besides being straightforward, proves adept at accurately simulating the dependable performances of PV modules. Comparative analysis reveals that the proposed methods extract parameters with minimal modeling errors and high precision, regardless of temperature fluctuations, outperforming conventional PSO methods.

From Fundamental Interfacial Reaction Kinetics to Macroscopic Current–Voltage Characteristics: Case Study of Solid Acid Fuel Cell Limitations and Possibilities

AbstractThe unique properties of solid acid electrolytes, in particular CsH2PO4, are in many ways ideal for fuel cell operation. However, the technology is constrained by high cathode overpotentials. Here a simplified cathode geometry is employed to obtain the fundamental electrochemical parameters (exchange current density and charge transfer coefficient) describing the oxygen reduction reaction (ORR) at the CsH2PO4‐Pt‐gas interface. The parameters are incorporated into a 1D model of the voltage–current characteristics of realistic SAFC cathodes, which reproduced the measured polarization behavior of such cathodes without recourse to fitting adjustable parameters. Following this validation, the model is utilized to evaluate the impact of changes to cathode properties, microstructure, and operating conditions. Of these, the charge transfer coefficient, measured to have a value of ≈0.6 for ORR on Pt in the SAFC cathode environment, is found to have the greatest impact on power output. Nevertheless, even without material modifications, a combination of microstructural and operational modifications are identified with projected performance metrics meeting Department of Energy targets (0.8 V at 300 mA cm−2, and peak power density of 1 W cm−2), albeit at high Pt loadings. However, the analysis indicates that truly meaningful advances will likely necessitate the discovery of alternative ORR catalysts.

An efficient self-powered piezoelectric energy extraction scheme with cascaded-gyrators-based transformer

The enhancement of power transfer from the piezoelectric transducer to the load with a compact size is explored in this paper. Large physical inductors are no more required to create resonance in piezoelectric energy harvesting schemes while applying the proposed gyrator-induced double resonance (GI-DR) technique. Hence, the proposed circuit is cost-effective and provide improved performance along with reduced-space benefits in integrated circuits (IC) package for wireless sensor nodes (WSN) and Internet-of-Things (IoT) applications. Two cascaded gyrators are used in place of a transformer in the proposed circuit. The required phasor response for resonance is acquired by the gyrators' voltage-current (V–I) relationship. Regarding the final charging voltage, the proposed circuit with a storage capacitor of 1000 mF can obtain 763.46 % and 14.77 % improved performance than other synchronous circuits like SEH and DSSH respectively. The proposed technique can also be applied to similar piezoelectric energy harvesting strategies with large inductors to create resonance.

Modeling of MoS2/Si heterostructure to study charge transfer dynamics

Here, we synthesized a MoS2/Si heterojunction device using a scalable approach involving DC sputtering coupled with sulfurization. The observed current–voltage characteristics unequivocally indicate a rectifying behavior at MoS2/Si heterointerface. To quantitatively assess the carrier dynamics, a comprehensive analysis utilizing thermionic emission and Landauer transport formalism model was employed. The spatial variation in current across the MoS2/Si devices suggests a potential influence of MoS2’s in-plane series resistance. Furthermore, the electrical behavior of the device is found to be temperature-dependent, with higher temperatures resulting in enhanced conductivity attributed to an increase in thermally generated charge carriers. As temperature rises, the Landauer current model observes an increased ratio of density of states to carrier injection rate, along with other temperature-dependent terms. Meanwhile, the thermionic current model maintains a fixed effective value for its material-dependent term, the Richardson constant, irrespective of temperature changes. Therefore, a comparative analysis between thermionic emission and Landauer transport formalism reveals that the conventional thermionic emission model better aligns with experimentally observed leakage current in reverse bias, showcasing a minimal barrier height at the heterojunction. This comprehensive investigation provides valuable insights into the charge transfer mechanisms at the MoS2/Si interface, opening avenues for its potential innovative applications in electronic devices.

Effect of temperature on GaN-integrated optical transceiver chips.

The gallium nitride (GaN) integrated optical transceiver chip based on multiple quantum wells (MQW) structure exhibits great promise in the fields of communication and sensing. In this Letter, the effect of ambient temperature on the performance of GaN-integrated optical transceiver chips including a blue MQW light-emitting diode (LED) and a MQW photodiode (PD) is comprehensively studied. Temperature-dependent light-emitting and current-voltage characteristics of the blue MQW LEDs are measured with the ambient temperature ranging from -70°C to 120°C. The experimental results reveal a decline in the electroluminescent (EL) intensity and an obvious redshift in the emission peak wavelength of the LED with increasing ambient temperature. The light detection performance of MQW PD under different temperatures is also measured with the illumination of an external blue MQW LED, indicating an enhancement in the PD sensitivity as the temperature rises. Finally, the temperature effect on the MQW PD under the illumination of the MQW LED on the GaN-integrated optical transceiver chip is characterized, and the PD photocurrent increases with higher ambient temperature. Furthermore, the measured temperature characteristics indicate that the GaN-integrated optical transceiver chip offers a promising application potential for optoelectronic temperature sensor.

Rectification in Ionic Field Effect Transistors Based on Single Crystal Silicon Nanopore

AbstractIonic FETs have enormous potential for energy conversion, sensing, and ionic circuits due to their efficient regulation of the nanochannel. Here ionic FETs based on single‐crystal silicon nanopores and the rectification of the fabricated devices are studied. The electrical characterization results demonstrated that since the silicon‐based nanopores have the advantage of modulating the surface charge due to their semiconductor nature and benefitting from the effective 3D gating effect on the nanochannel, the magnitude and polarity of surface charge can be modulated by the gate voltage. The rectification effect can be adjusted by applying a certain voltage and fulfilling a transition between anion selectivity and cation selectivity when the surface charge polarity is reversed. Moreover, current–voltage characteristics of the reported ionic FET can be switched between ohmic and diode‐like regimes. The proposed ionic FETs supply a novel platform to study the ionic properties and have great potential to be applied in large‐scale ionic circuits due to their excellent performance. Finally, simulation results prove the surface charge modulated by the gate voltage determines the magnitude and direction of rectification, which is consistent with the reported experiment result.

Machinability and pulse characteristics of Ti-16Al-14Nb (α/β) alloy in wire-electric discharge machining process: A surface integrity study

The goal of the present work is to produce the efficient cutting of Ti-16Al-14Nb (α/β) alloy through wire-electric discharge machining and contemplate the terminologies such as machining ability, surface integrity and material removing capability. For this, the experimentation has been designed by considering three process parameters, pulse-on time ( Ton), pulse-off time ( Toff) and peak current ( Ip) at three significant levels (low, high, intermediate) in L27 order designed from design of experiments. The effect of these process variables on pulse characteristics, surface roughness ( Ra), kerfwidth ( Kw) and material removal rate ( MRR) is analyzed and mathematically modeled with analysis of variance. The results state that the highest MRR (0.521, 0.51, 0.506 mm3/sec) and low surface roughness (8.91, 8.89, 8.68 µm) values are observed at the highest level (110 µs, 15 µs, 8 A). If the pulse duration is kept at low ( Ton = 40µs, Toff = 3µs), the increase in peak current from 3 A to 8 A leads to a 64.54% increase in MRR and a 52.9% increase in Ra values. ANOVA results stated that Ton has contributed 20.4%, 35.8% and 19.3%, and Ip has contributed 43.1%, 30.5% and 46.6% influence on MRR, Kw and Ra respectively. The voltage–current characteristics studies confirmed that the strong intense pulses at a higher peak current (8 A) resulted in the increased MRR (0.521 mm3/sec) and Ra (8.43 µm) leading to the formation of swages and ridges. The surface integrity analysis derived from Abbott–Firestone curve agreed that the lowest level has shown better skewness ( Rsk = −0.274) and at highest level showed a larger deviation in skewness ( Rsk = +2.672) signifies that higher asymmetry (poor) of the surface.

Electrophysiological Effects of the Sodium-Glucose Co-Transporter-2 (SGLT2) Inhibitor Dapagliflozin on Human Cardiac Potassium Channels.

The sodium-glucose co-transporter-2 (SGLT2) inhibitor dapagliflozin is increasingly used in the treatment of diabetes and heart failure. Dapagliflozin has been associated with reduced incidence of atrial fibrillation (AF) in clinical trials. We hypothesized that the favorable antiarrhythmic outcome of dapagliflozin use may be caused in part by previously unrecognized effects on atrial repolarizing potassium (K+) channels. This study was designed to assess direct pharmacological effects of dapagliflozin on cloned ion channels Kv11.1, Kv1.5, Kv4.3, Kir2.1, K2P2.1, K2P3.1, and K2P17.1, contributing to IKur, Ito, IKr, IK1, and IK2P K+ currents. Human channels coded by KCNH2, KCNA5, KCND3, KCNJ2, KCNK2, KCNK3, and KCNK17 were heterologously expressed in Xenopus laevis oocytes, and currents were recorded using the voltage clamp technique. Dapagliflozin (100 µM) reduced Kv11.1 and Kv1.5 currents, whereas Kir2.1, K2P2.1, and K2P17.1 currents were enhanced. The drug did not significantly affect peak current amplitudes of Kv4.3 or K2P3.1 K+ channels. Biophysical characterization did not reveal significant effects of dapagliflozin on current-voltage relationships of study channels. In conclusion, dapagliflozin exhibits direct functional interactions with human atrial K+ channels underlying IKur, IKr, IK1, and IK2P currents. Substantial activation of K2P2.1 and K2P17.1 currents could contribute to the beneficial antiarrhythmic outcome associated with the drug. Indirect or chronic effects remain to be investigated in vivo.

Computational analysis of device-to-device variability in resistive switching through single-layer hexagonal boron nitride and graphene vertical heterostructure model

Abstract We quantify the device-to-device variations in resistive switching by considering a single-layer hexagonal boron nitride and graphene junction as a model. Then, we mimic the variations in the surface of a two-dimensional material in terms of defects and interface states by changing the distance between single-layer hexagonal boron nitride and graphene. We use density functional theory as a methodology to perform simulations at the atomic scale. The results show that the distance affects the current–voltage characterization results and that creating ultra uniform structures is important to reduce the device-to-device variability. These results are crucial to understand the reliability and accuracy of device-to-device variations in memory devices and mimic the neural dynamics beyond the synaptic cleft.

Электрофизические и температурные характеристики тонких слоёв квантовых точек Ag2S

This paper presents a study of the electrical properties of colloidal silver sulfide quantum dots thin films (Ag2S/SiO2 QDs) and silver sulfide quantum dots decorated with Au plasmon nanoparticles (Ag2S/SiO2/Au QDs). A study of the conductivity temperature dependences was carried out in the temperature range from 300 to 360 K. The activation energy values were obtained from linear approximations of the current-voltage characteristics in Arrhenius coordinates. It has been shown that decorating Ag2S/SiO2 QDs with Au plasmon nanoparticles leads to an increase in the band gap from 0.29 to 0.89 eV. In this work, the ideality factor is calculated and the main conductivity mechanisms of the presented thin-film structures are determined. It has been shown that decorating Ag2S/SiO2 QDs with Au plasmon nanoparticles leads to a change in the conductivity type. According to the Mott-Gurney model, the charge carriers mobility is calculated.