Current-voltage Characteristics Research Articles

A test of meta-heuristic algorithms for parameter extraction of next-generation solar cells with S-shaped current–voltage curves

Identifying parameters of photovoltaic (PV) models based on measured current–voltage (IV) characteristic curves is critical for simulating, evaluating, and controlling PV systems. IV characteristics of the latest-generation solar cells (SCs) often display an S-shaped deformation. In this paper, we explore the potential of meta-heuristic algorithms to address the parameter estimation problems associated with PV cells that exhibit S-shaped IV characteristics. This estimation is performed within the framework of the opposed two-diode model. We implemented a total of 14 algorithms from various classes to extract the SC parameters from synthetic IV curves, which were generated using a range of parameter values. The results were compared by using nonparametric statistical methods. These methods include the Wilcoxon signed-rank test for pairwise comparisons, and the Friedman, Friedman Aligned, and Quade tests for multiple comparisons. Comprehensive results and analyses show that the STLBO (Simplified teaching–learning based optimization algorithm) and ADELI (Adaptive differential evolution with the Lagrange interpolation argument) algorithms demonstrate highly competitive performance in terms of accuracy and reliability. This paper underscores the efficacy of advanced meta-heuristic algorithms in solving complex non-linear optimization problems in the domain of photovoltaic research, particularly concerning the unique challenges posed by S-shaped IV characteristics of new-generation solar cells.

Triple-diode solar cell current optimization – An analytical solution based on the Lambert W function

A novel mathematical modeling approach for the Triple-Diode Model (TDM) and its parameter estimation is introduced in this paper. For the first time in the literature, this paper presents two analytical solutions for calculating the current in TDM solar cells using the Lambert W function. Additionally, a new metaheuristic algorithm, the Adaptive Evaporation Rate Water Cycle Algorithm (Adaptive ERWCA), is proposed for estimating TDM solar cell parameters. The proposed algorithm is tested using both the new analytical solutions and a well-known iterative approach for the current-voltage characteristics of the TDM solar cells model. Extensive testing is conducted on three well-known solar cells/modules and a panel under various weather conditions. The results demonstrate that the proposed analytical expressions for the current-voltage characteristics are accurate and highly effective for representing TDM solar cell current. The accuracy of the parameter estimates obtained with the application of the proposed algorithm, considering both analytical solutions and the iterative approach, is compared with existing literature results. It is shown that the proposed algorithm outperforms existing algorithms in solar cell parameter estimation across both the analytical and iterative approaches for current-voltage characteristics. Remarkably, for the RTC France solar cell, the SOLAREX MSX 60 solar module, and the PHOTOWATT-PWP 201 solar module, the obtained Root Mean Square Errors (RMSE) are 0.00075141, 0.01157153, and 0.0010578, respectively. These results are currently the best reported in the literature.

Low-Cost Source Measure Unit (SMU) to Characterize Sensors Built on Graphene-Channel Field-Effect Transistors.

This study introduces a flexible and low-cost solution for a source measure unit (SMU), which is presented as an alternative to conventional source meter units and a blueprint for sensor FET drivers. An SMU collects current-voltage (I-V) curves with an additional variable voltage or current and is commonly used to characterize semiconductors. We present the hardware design, interfacing, and test results of our SMU. Specifically, we present representative I-V curve measurements for graphene-channel FETs to demonstrate the SMU's capability to efficiently characterize these devices with minimal noise and sufficient accuracy. This cost-effective solution presents a promising avenue for researchers and developers seeking reliable tools for sensor development and characterization. We demonstrate, with the example of surface illumination, how the sensing behavior of graphene-channel FETs can be characterized without the need for expensive equipment. Additionally, the SMU was validated with known passive and active components, along with probe station integration for semiconductor die-scale connection. The SMU's focus on collecting I-V curves, coupled with its ability to identify device defects, such as parasitic Schottky junctions or a failed oxide, contributes to its utility in quality testing for semiconductor devices. Its low-cost nature makes it accessible for various research endeavors, enabling efficient data collection and analysis for graphene-based and other nanomaterial-based sensor applications.

Standardizing the optimal photo-diode performance of CuO nanostructures through various morphological patterns

The CuO nanocrystals were prepared using a simple surfactant-assisted co-precipitation technique then addition of anionic surfactants such as Hexamine (HEX), Polyvinyl Pyrrolidone (PVP), Polyvinyl Alcohol (PVA) and Cetyl Trimethyl Ammonium Bromide (CTAB) leads to the formation of CuO nanostructures on the surface of spherical particles. Samples were characterized via X-ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FT-IR), Field Emission Scanning Electron Microscopy (FESEM), UV–visible diffuse reflectance spectroscopy and I-V characteristics. According to various spectroscopic results, all surfactant decorated CuO nanocrystal have a monoclinic crystal structure. Then the average grain size of CuO samples supported by HEX, PVA, PVP and CTAB is approximately 72 nm. The properties of surfactants have been shown to affect size and shape. In addition, the FT-IR spectra of all samples show three similar vibration modes of CuO, this indicates the presence of a monoclinic CuO crystal structure. According to absorbance data, the quantum confinement effect caused by the use of surfactant significantly affects the optical bandgap value, ranging from 3.00 to 2.59 eV. Current-voltage characteristics [I-V] unveil the photodiode parameters of prepared diode are evaluated in the dark and light condition. In this case, the barrier height (ΦB) is 0.80 eV and the ideal value for the diode (n) is 2.05, which is more suitable for photodiode applications.

DC current–voltage and impedance spectroscopy characterization of nCdS/pZnTe HJ

This paper describes the electrical and dielectric behavior of the nCdS/pZnTe HJ by current–voltage, capacitance–voltage characteristics, and impedance spectroscopy in a temperature interval 220–350 K. A microcrystalline p-ZnTe layer and n-CdS were grown on glass/ZnO substrate by closed space sublimation method. As frontal contact to CdS, the transparent ZnO and as a back contact to ZnTe, silver conductive paste (Ag) treated at 50 °C in vacuum were used. The current–voltage results of nCdS/pZnTe HJ show a rectifying behavior. The junction ideality factor, barrier height, and series resistance values were extracted from the rectifying curves at different temperatures. The built-in voltage, carrier concentration and depletion width were obtained from the capacitance–voltage measurements. Analysis of the J–V–T and C–V–T characteristics shows that the thermionic emission and recombination current flow mechanisms dominate in the nCdS/pZnTe HJ. The dielectric study reveals that the experimental values of the AC conductivity, dielectric constant, dielectric loss, the imaginary part of the electric modulus are found to be very sensitive to frequency and temperature. The dielectric constant and dielectric loss are observed to be high at the low frequency region. The increase in the values of electric modulus with the frequency implies an increase in the interfacial polarization at the interface of nCdS/pZnTe HJ. Jonscher’s universal power law shows that with increasing frequency, AC conductivity increased. The results conductivity show that the ionic conductivity and interfacial polarization are the main parameters affecting the dielectric properties of the device when the temperature changes.

Strain and piezoelectric control of electronic and photonic properties of p − n diodes

Piezoelectricity is a well-known effect in a vast number of technologically important insulators and semiconductors and exists in 20 out of the 32 three-dimensional crystal classes. The piezoelectric effect is the driving mechanism behind several classical sensors and transmitters, and also most recently, in many nanodevices. Zhong Lin Wang coined the fields piezotronics and piezo-phototronics where the piezoelectric effect plays a dominant role. Piezoelectricity couples in a linear fashion mechanical strain to electrical fields and vice versa. In solids, there is another linear coupling between strain and the electric potential, known as the deformation potential effect. While linear in its coupling nature, this effect does not require the solid to be non-centrosymmetric in contrast to the piezoelectric effect. Moreover, the deformation potential effect is quantitatively huge and leads to changes in the conduction and valence band edges of III–V and II–VI materials of, typically, 50–100 meV in the presence of 1 % strain. Therefore, the deformation potential effect is essential to determine the electronic and photonic properties of bulk and nanostructure semiconductors in the presence of strain. In this work, we compute the relative importance of piezoelectricity and the deformation potential effect in the presence of lattice mismatch and external strain. We choose p − n junctions of ZnO/GaN structures but anticipate that the general conclusions can be carried over to other material structures. The main result of the present work is that both the inclusion of the deformation potential effect and piezoelectricity is crucial to correctly compute the effect of strain on p − n junction current–voltage curves and photonic properties. In our analysis of wurtzite heterostructures, the spontaneous polarization effect is also included but this effect appears to play a minor role for electronic and photonic properties.

Modeling temperature dependent Ni/β-Ga2O3 Schottky barrier diode interface properties

A TCAD simulator is used to model measured current–voltage characteristics of Ni/β-Ga2O3 Schottky barrier diode (SBD), deposited by E-beam evaporation, at room temperature. A good fit was obtained when the Ni workfunction, Ni/β-Ga2O3 interface traps concentrations and Si-doped β-Ga2O3 surface electron affinity variation were taken into consideration. Temperature dependent J-V characteristics were investigated and a good agreement at low voltage was obtained. However, the simulated current at high voltage (series resistance domain) was higher than measurement while both series resistance (Rs) and on-resistance (Ron) for measurements were higher than their simulations counterparts. In order to overcome this disagreement, the effect of Si-doped β-Ga2O3 surface electron affinity on the SBD at each temperature was studied. This is due to the fact that the electron affinity can be affected by trap levels located above conduction band maximum (CBM) as reported in the literature. The surface electron affinity decreased with increasing temperature because trap levels located above CBM were activated. A better agreement was achieved.

Surface and interface chemistry of bromine–methanol‐etched Cd0.9Zn0.1Te crystals

Chemical polishing or chemo‐mechanical polishing is crucial as a last step of surface preparation to remove the damaged layer and contaminants from the surface of CdZnTe crystals. The bromine–methanol solution is widely used for this purpose. However, bromine–methanol solution enriches the surface with Te and results in poor performance of CdZnTe crystals. In this study, the effect of the chemical polishing with 5% bromine–methanol solution on the surface and at the interface is investigated and it is demonstrated that etching duration strongly influences surface stoichiometry and interface contaminants. The evolution of the surface topography with etching and chemical changes are presented. It is shown that after 90 s etching/polishing, subsurface damage is removed and Te enrichment is minimum. Moreover, interface layer thickness is the smallest for 90 s etching duration. It is presented that further increase in the etching duration disturbs the surface stoichiometry and interface depth. It also calculated that 90 s of etching shows low interface barrier and symmetrical current–voltage curve.

Advancing Frontiers: A High-Impact Study on the Synthesis, Characterization, and Superior Device Performance of AlCr2O4/MXene Nanocomposites

Here we present the fabrication of a multilayer resistive memory device (ReRAM) utilizing AlCr2O4/MXene nanocomposite. Comprehensive investigations into the structural and morphological properties of the nanostructures were conducted using various characterization techniques. The fabricated device was tested by measuring I-V characteristics at different current applications which encompasses all previous results. The band gap value for the nanocomposite was reduced to 2.42 eV while that for AlCr2O4 was measured at 3.25 eV via photoluminescence spectrum. Average particle size of the AlCr2O4/MXene nanocomposite was determined to be 25 nm through powder X-ray diffraction analysis. Crystallographic analysis revealed that all crystal peaks conform to the R-3c (167) space group, indicative of a standard hexagonal crystal structure. Energy-dispersive X-ray readings provided further confirmation that all required elements are present in the sample, affirming successful synthesis of the nanocomposite. Notably, the nanocomposite demonstrated exceptional performance as an electrode material in ReRAM, as evidenced by its current-voltage characteristics, making the AlCr2O4/MXene nanocomposite suitable for a wide range of next-generation device applications.

Independently Accessible Dual-Band Barrier Infrared Detector Using Type-II Superlattices

We report a novel dual-band barrier infrared detector (DBIRD) design using InAs/GaSb type-II superlattices (T2SLs). The DBIRD structure consists of back-to-back barrier diodes: a “blue channel” (BC) diode which has an nBp architecture, an n-type layer of a larger bandgap for absorbing the blue band infrared/barrier/p-type layer, and a “red channel” (RC) diode which has a pBn architecture, a p-type layer of a smaller bandgap for absorbing the red band infrared/barrier/n-type layer. Each has a unipolar barrier using a T2SL lattice matched to a GaSb substrate to impede the flow of majority carriers from the absorbing layer. Each channel in the DBIRD can be independently accessed with a low bias voltage as is preferable for high-speed thermal imaging. The device modeling of DBIRDs and simulation results of the current–voltage characteristics under dark and illuminated conditions are also presented. They predict that the dual-band operation of the DBIRD will produce low dark currents and 45–56% quantum efficiencies for the in-band photons in the BC with λc = 5.58 μm, and a nearly constant 32% in the RC with λc = 8.05 μm. The spectral quantum efficiency of the BC for 500 K blackbody radiation is approximately 50% over the range of λ = 3–4.7 μm, while that of the RC has a peak of 42% at 5.9 μm. The DBIRD may provide improved high-speed dual-band imaging in comparison with NBn dual-band detectors.

Effect of nozzle contamination on microwave discharge cathode performance

An understanding of the degradation mechanism of a microwave discharge cathode is the key to extending the lifetime of microwave ion thruster systems. This study investigates the effect of nozzle contamination by sputtered Ag-polytetrafluoroethylene (PTFE) on microwave discharge cathode performance. The current–voltage characteristics were measured for nominal and contaminated (by PTFE spray with 0.2 µm thick or tape with 0.15 mm thick) cathodes. The contamination thickness and area on the nozzle were varied to investigate the characteristic differences. It was confirmed that the anode voltage increased by 20 V or more in the case of the contaminated cathode. The anode voltage was measured for the sputter-contaminated cathode to evaluate the effect of contamination under more realistic conditions. After 630 h of sputter-contamination operation, it is estimated that sputtered particles were deposited to a thickness of 77 µm at most, and the anode voltage increased by 8 V. The results show that the downstream surface of the nozzle is critical for maintaining cathode performance. The insulating coating formed by the sputtered PTFE may interfere with ion absorption and degrade electron emission capability. A theoretical model based on the extended Brophy model supports these results. This study provides important information for the use of PTFE-based materials around ion thrusters.

Current-Voltage (i-V) characteristics of electrolyte-supported (NiO-YSZ/NiO-SDC/ScSZ/LSCF-GDC/LSCF) solid oxide electrolysis cell during CO2/H2O co-electrolysis

Solid oxide electrolysis cells (SOECs) stabilize CO2 emissions by converting CO2/H2O into synfuel. Current-Voltage (i-V) characteristics of an electrolyte-supported button cell (NiO-YSZ/NiO-SDC/ScSZ/LSCF-GDC/LSCF) were measured as a function of temperature, water vapor concentration, and CO2 gas concentrations. The cell microstructure was characterized by the Field Emission Scanning Electron Microscope (FE-SEM). FE-SEM micrographs depict that the electrolyte layer is relatively dense, and porous fuel and air electrode layers are well adhered to the electrolyte. The i-V curves were obtained at a scan rate of 0.02 Vs−1 from 0.3 to 1.5 V. Electrolysis current density increases as the temperature increases. SOEC performance increases, but SOFC performance decreases with increased water vapor concentration. Electrolysis current densities decrease as the CO2 concentration increases. The i-V characteristics show only ohmic polarization under fuel-lean and fuel-rich conditions. At optimal conditions, current density values at 800 °C/1.5 V are -174, -187, and -195 mA cm−2 for 5%H2O, 30%CO2, and 30%CO2/5%H2O co-electrolysis. At 800 °C, open-circuit voltage (OCV) values for H2O, CO2, and co-electrolysis are 0.906, 0.891, and 0.885 V, respectively. The electrolysis area-specific resistances (ASRs) give information on the reduction of CO2 or H2O, forming CO or H2, respectively. At optimal conditions, ASR values are 3.43, 3.29, and 3.18 Ω cm2 for H2O, CO2, and co-electrolysis, respectively. Co-electrolysis has a lower ASR value than pure H2O and CO2 electrolysis, indicating that H2O and CO2 are involved in the electrochemical processes.

Integrated electronic system for FET biosensor assessment based on current-voltage curve tracing

Field-effect transistor (FET) biosensors are pivotal in diverse applications, from environmental monitoring to healthcare diagnostics. Current-voltage (I-V) curve tracing is a powerful method for evaluating FET biosensor behavior, enabling comprehensive analysis of their FET biosensor characteristics. Traditional I-V curve tracing methods often require complex and expensive equipment, limiting their accessibility and practicality for routine sensor assessment. This study aims to develop and demonstrate an integrated electronic system for assessing FET biosensors using I-V curve tracing. The integrated electronic system uses readily available components, including microcontrollers, analog circuitry, and user-friendly software. We developed a compact, low-cost device that generates I-V curves for the FET biosensor. The integrated electronic system successfully generated I-V curves for various FET biosensors. The system demonstrated consistent, reliable performance, portability, and ease of use, making it a practical solution for routine sensor assessment. The average error in measurements using bipolar junction transistors (BJT) and metal-oxide-semiconductor field-effect transistors (MOSFETs) results in 2.62%, and measurements at different pH levels have a sensitivity of 21.6 mV/pH and a linearity of 0.9892. This innovation contributes to the advancement of FET biosensor technology. In the future, the developments should focus on ensuring their accuracy and reliability in various sensor fields.

Discharge characteristics of the planar microscale gap electrodes with various geometry structures in the atmosphere environment

The discharge of microscale gaps for MEMS systems is a serious issue. To reveal the dark discharge characteristics of the microscale gap, electrodes with various gap feature sizes were prepared, and the DC current–voltage characteristics for the electrodes were implemented in atmospheric air. The results showed minor differences in dark discharge current on a nanoampere scale among electrodes with varying gap sizes of micro-protrusions. The current formation mechanism was consistent with the electron avalanche theory. Morphological characterization identified the presence of non-ideal thin-layer trailings at the electrode edges. To evaluate the effect of trailings on the dark discharge characteristics of the microscale gap structures, the electrodes with varying trailing lengths were fabricated. It showed that the current increased exponentially in the presence of long thin-layer trailing. In this case, the breakdown is most pronounced with an effective gap distance of 30 μm and a trailing length of 14.34 μm for the electrodes. For this structure, the dark discharge current was 198 nA at 36 V bias voltage, while the discharge current increased to 50 µA when the bias was increased to 37 V, and stabilized at 100 µA when the bias voltage was higher than 39 V. The rapid increase in current caused by trailing originates from the field emission as judged by the Fowler-Nordheim theory. Simulation results showed that the field strength can reach up to 3.76 × 109 V/m at a thin layer trailing length of 3.5 μm and a bias voltage of 200 V, which matches the conditions for the field emission. By calculating the effective secondary electron emission coefficient, it was found that thin-layer trailing significantly intensifies the ion-enhanced effect, further lowering the threshold for field emission and resulting in a rapid increase in microscale gap current at lower voltages.

Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes

Pulsed laser deposition technique is used to grow unintentionally n-type (0001)ZnO layers with high crystalline and morphological qualities on p-type (0001)GaN/sapphire templates. Electroluminescent devices are fabricated on these p–n heterojunctions. Oxygen pressure during growth has been found to influence strongly the crystalline and defect properties of the grown layers, which affect not only the current–voltage characteristics but also the emission properties of the electroluminescent devices. It has been observed that the electroluminescence (EL) spectra have both defects related visible and band-edge related ultraviolet (UV) transition features stemming from both GaN and ZnO sides. The study reveals that UV to visible EL intensity ratio maximizes at an optimum oxygen pressure. The relative contribution of EL originating from ZnO and GaN sides can be tuned by the applied bias, as the bias can control the depletion width and hence the carrier interdiffusion across the junction. This finding thus offers a scope to electrically tune the colour of the emitted light in these devices.

Adaptive Particle Swarm Optimization based improved modeling of Solar Photovoltaic module for parameter determination

Solar Photovoltaic (SPV) panel manufacturers provide a datasheet, which contains key electrical specifications of the SPV module for the user's reference. However, these data alone prove inadequate in anticipating the performance of PV systems under fluctuating atmospheric conditions. The approach put forth in this paper ascertains five parameters of a PV module using information supplied by the manufacturer. This approach considers the impact of solar radiation and cell temperature. The paper outlines the process for determining the parameters of the five-parameter model and establishes a comparison between projected current-voltage curves and manufacturer-provided data. To extract the unknown parameters of a single diode model Adaptive Particle Swarm Optimization (APSO) techniques with barrier constraints was developed. The study investigates both multi-crystalline and mono-crystalline PV module technologies to validate the efficacy of the proposed method. Results demonstrate that the proposed technique, besides being straightforward, proves adept at accurately simulating the dependable performances of PV modules. Comparative analysis reveals that the proposed methods extract parameters with minimal modeling errors and high precision, regardless of temperature fluctuations, outperforming conventional PSO methods.

From Fundamental Interfacial Reaction Kinetics to Macroscopic Current–Voltage Characteristics: Case Study of Solid Acid Fuel Cell Limitations and Possibilities

AbstractThe unique properties of solid acid electrolytes, in particular CsH2PO4, are in many ways ideal for fuel cell operation. However, the technology is constrained by high cathode overpotentials. Here a simplified cathode geometry is employed to obtain the fundamental electrochemical parameters (exchange current density and charge transfer coefficient) describing the oxygen reduction reaction (ORR) at the CsH2PO4‐Pt‐gas interface. The parameters are incorporated into a 1D model of the voltage–current characteristics of realistic SAFC cathodes, which reproduced the measured polarization behavior of such cathodes without recourse to fitting adjustable parameters. Following this validation, the model is utilized to evaluate the impact of changes to cathode properties, microstructure, and operating conditions. Of these, the charge transfer coefficient, measured to have a value of ≈0.6 for ORR on Pt in the SAFC cathode environment, is found to have the greatest impact on power output. Nevertheless, even without material modifications, a combination of microstructural and operational modifications are identified with projected performance metrics meeting Department of Energy targets (0.8 V at 300 mA cm−2, and peak power density of 1 W cm−2), albeit at high Pt loadings. However, the analysis indicates that truly meaningful advances will likely necessitate the discovery of alternative ORR catalysts.

An efficient self-powered piezoelectric energy extraction scheme with cascaded-gyrators-based transformer

The enhancement of power transfer from the piezoelectric transducer to the load with a compact size is explored in this paper. Large physical inductors are no more required to create resonance in piezoelectric energy harvesting schemes while applying the proposed gyrator-induced double resonance (GI-DR) technique. Hence, the proposed circuit is cost-effective and provide improved performance along with reduced-space benefits in integrated circuits (IC) package for wireless sensor nodes (WSN) and Internet-of-Things (IoT) applications. Two cascaded gyrators are used in place of a transformer in the proposed circuit. The required phasor response for resonance is acquired by the gyrators' voltage-current (V–I) relationship. Regarding the final charging voltage, the proposed circuit with a storage capacitor of 1000 mF can obtain 763.46 % and 14.77 % improved performance than other synchronous circuits like SEH and DSSH respectively. The proposed technique can also be applied to similar piezoelectric energy harvesting strategies with large inductors to create resonance.

Modeling of MoS2/Si heterostructure to study charge transfer dynamics

Here, we synthesized a MoS2/Si heterojunction device using a scalable approach involving DC sputtering coupled with sulfurization. The observed current–voltage characteristics unequivocally indicate a rectifying behavior at MoS2/Si heterointerface. To quantitatively assess the carrier dynamics, a comprehensive analysis utilizing thermionic emission and Landauer transport formalism model was employed. The spatial variation in current across the MoS2/Si devices suggests a potential influence of MoS2’s in-plane series resistance. Furthermore, the electrical behavior of the device is found to be temperature-dependent, with higher temperatures resulting in enhanced conductivity attributed to an increase in thermally generated charge carriers. As temperature rises, the Landauer current model observes an increased ratio of density of states to carrier injection rate, along with other temperature-dependent terms. Meanwhile, the thermionic current model maintains a fixed effective value for its material-dependent term, the Richardson constant, irrespective of temperature changes. Therefore, a comparative analysis between thermionic emission and Landauer transport formalism reveals that the conventional thermionic emission model better aligns with experimentally observed leakage current in reverse bias, showcasing a minimal barrier height at the heterojunction. This comprehensive investigation provides valuable insights into the charge transfer mechanisms at the MoS2/Si interface, opening avenues for its potential innovative applications in electronic devices.

Effect of temperature on GaN-integrated optical transceiver chips.

The gallium nitride (GaN) integrated optical transceiver chip based on multiple quantum wells (MQW) structure exhibits great promise in the fields of communication and sensing. In this Letter, the effect of ambient temperature on the performance of GaN-integrated optical transceiver chips including a blue MQW light-emitting diode (LED) and a MQW photodiode (PD) is comprehensively studied. Temperature-dependent light-emitting and current-voltage characteristics of the blue MQW LEDs are measured with the ambient temperature ranging from -70°C to 120°C. The experimental results reveal a decline in the electroluminescent (EL) intensity and an obvious redshift in the emission peak wavelength of the LED with increasing ambient temperature. The light detection performance of MQW PD under different temperatures is also measured with the illumination of an external blue MQW LED, indicating an enhancement in the PD sensitivity as the temperature rises. Finally, the temperature effect on the MQW PD under the illumination of the MQW LED on the GaN-integrated optical transceiver chip is characterized, and the PD photocurrent increases with higher ambient temperature. Furthermore, the measured temperature characteristics indicate that the GaN-integrated optical transceiver chip offers a promising application potential for optoelectronic temperature sensor.