Current Spectroscopy Research Articles

Ion Migration Enhances the Performance of Perovskite CsPbBr3 γ‐Ray Detectors

AbstractUncontrolled ion migration is well‐known in perovskite‐based semiconductor devices. Here, it is shown that instead of being detrimental, ion migration can be used to enhance the performance of perovskite CsPbBr3 semiconductor gamma‐ray detectors. Through the deliberate application of electrical biasing, ion migration is actively controlled to modify the metal‐CsPbBr3 interface barrier height in devices with asymmetric electrodes. Ion migration plays a pivotal role in reducing bulk defects, as evidenced by the contact potential difference measurement, thermally stimulated current spectroscopy and photoluminescence measurements. The evidence suggests that biasing‐induced ion migration in CsPbBr3 results in a reduction in electron traps and significant detector improvement. As biasing at elevated temperatures expedites ion migration, preconditioning the CsPbBr3 crystals through reverse biasing is a promising strategy for enhancing their energy‐resolving performance.

Effect of Plasma Treatment on Self-Cleaning Features of Acrylic Paint/TiO2-Coated Surfaces for Environmental Pollutant Removal

This study investigates the characterization and performance of self-cleaning TiO2 surfaces synthesized through a one-step preparation process, followed by enhancement via plasma treatment. The process involved coating aluminum foil with an acrylic paint mixture containing nanoparticles of different mass compositions and subsequent plasma treatment using a continuous plasma arc. Scanning electron microscopy revealed the morphology of the treated surfaces, showing an increase in surface area of plasma-treated materials. Energy-dispersive X-ray spectroscopy revealed changes in oxygen and titanium in acrylic paint/TiO2 surfaces as the TiO2 content increased, indicating successful TiO2 incorporation. Raman spectroscopy showed that the bulk structure of self-cleaning acrylic paints is mainly preserved after plasma treatment. Alternating current impedance spectroscopy assessed that plasma treatment reduced agglomeration and increased active sites, especially for the acrylic paint/TiO2 surfaces with 0.5 mg/cm3 TiO2. The contact angle measurements indicated that plasma treatment enhanced the superhydrophobic characteristics and potential self-cleaning abilities of produced acrylic paint/TiO2 surfaces. The efficacy of these plasma-treated surfaces in self-cleaning was evaluated by testing their performance against puddle sediment and automotive oil samples. The study demonstrated that plasma treatment positively impacted the self-cleaning ability of the acrylic paint/TiO2 surfaces, particularly those with 0.5 mg/cm3 TiO2. This enhancement was attributed to the formation of functional groups, improved water repellency, and possible increases in surface area, which collectively contribute to the sustainable self-cleaning properties of the treated surfaces.

Unveiling the Monoclinic Phase in CsPbBr3-xClx Perovskite Crystals, Phase Transition Suppression and High Energy Resolution γ-Ray Detection.

All-inorganic CsPbBr3 and CsPbCl3 perovskites are promising materials for high-performance solar cells and advanced radiation detection technologies with high stability. Here we report that CsPbBr3-xClx (x = 0-3) crystals exhibit eutectoid behavior for the melting points and phase transition temperatures. The well-known halide perovskite cubic phase transition temperature shifts near room temperature (∼37 °C for CsPbBr2Cl). We conducted an extensive crystallographic analysis on single crystals of 7 different compositions, including the end members CsPbBr3 and CsPbCl3. Contrary to previous beliefs, we discovered they exhibit a monoclinic structure with space group symmetry P21/m at room temperature, rather than the orthorhombic Pnma. This new structural model is more precise and features a unit cell volume that is four times larger than that of the orthorhombic model. From high-quality single crystals of CsPbBr2Cl, grown by the Bridgman method, we constructed γ-ray detectors achieving an energy resolution of 7.2% at 200 V for 57Co radiation. Thermally stimulated current spectroscopy of the CsPbBr2Cl samples revealed that the defect densities in crystals from different regions of the ingot were relatively uniform, with values of ∼4.72 × 1012 and ∼5.09 × 1012 cm-3. These findings indicate that low deep-level defect densities can be achieved that are consistent with the notable performance of the CsPbBr2Cl perovskite as a high-energy γ radiation detector.

Reference values for cerebral and peripheral tissue oximetry in children: A clinical TD-NIRS study.

Current non-invasive near-infrared spectroscopy (NIRS) tissue oximetry suffers from suboptimal reproducibility over probe repositioning, hindering clinical threshold establishment. Time Domain-NIRS (TD-NIRS) offers higher precision but lacks sufficient paediatric data, preventing effective clinical application. We aimed to establish reference ranges for cerebral and mid-upper arm (MUA) tissue haemodynamics in paediatric subjects using TD-NIRS and explore correlations with auxological variables. TD-NIRS measurements were conducted acquiring data from cerebral and MUA regions with the NIRSBOX tissue oximeter. Morphological and clinically relevant information were collected to explore potential correlations with TD-NIRS derived parameters. TD-NIRS assessment was applied in 350 children (8.4 ± 5.0 years). Precision of TD-NIRS was demonstrated with standard deviations of 0.9% (StO2) and 4.2 μM (tHb) for frontotemporal cerebral cortex, and 0.8% (StO2) and 3.7 μM (tHb) for MUA. No user dependency was observed. The trends of values for cerebral and peripheral regions vary differently according to age and auxological parameters. This study reports resting-state optical and haemodynamic values for a healthy paediatric population, providing a foundation for future investigations into clinically relevant deviations in these parameters. Furthermore, correlations with anthropometric and demographic values provide valuable insights for a deeper understanding of tissue haemodynamic evolution in childhood.

Enhanced denitrification by sunlight–hematite: A neglected nitrogen flow pattern in red soil

Mineral-microbe interactions in the Earth's Critical Zone significantly influence elemental biogeochemical cycling and energy flow processes. This study addresses the key scientific question of how semiconducting minerals drive microbial nitrogen cycling. In the red soil environment, the presence of semiconducting minerals enhances the denitrification process mediated by facultative microorganisms (Pseudomonas aeruginosa PAO1) with denitrifying activity. Compared to darkness, light significantly enhanced the synergistic denitrification kinetic process of red soil and Pseudomonas aeruginosa PAO1 (1.87 times). Cyclic voltammetry shows that the P. aeruginosa PAO1-red soil synergistic system exhibits distinct redox peaks under light. The constant potential current curve and electrochemical impedance spectroscopy measurements reveal a high photocurrent density (1.0 μA/cm2) and minimal polarization resistance (102 Ω) under this condition. These findings confirm that the sunlight-red soil-P. aeruginosa PAO1 synergistic process has excellent electron generation and migration capacity, active redox reactions, and good electron compatibility. Additionally, the photoelectrons of semiconductive minerals in red soil profoundly impact the metabolic processes of microbial denitrification functional genes. Using real-time polymerase chain reaction (qPCR) gene array technology, the abundance of nitrogen metabolism functional genes in P. aeruginosa PAO1 increased by 200 % during the light-red soil synergistic process. Notably, denitrification-related genes (ureC, nirS1, gdhA, and nosZ2) were significantly upregulated. This study confirms that semiconducting minerals are involved in the nitrogen cycle pathway of microbial denitrification and supplements the theory of mineral-microbial synergistic element biogeochemical cycling in the natural environment.

Na+ conductivity of (100−x)Na3PS4−xCa3N2 glass and glass−ceramics

AbstractThe ionic conductivity of Na3PS4 can be improved via the aliovalent substitution of P and S as well as multivalence cation substitution of Na. Although the enhanced ionic conductivities of tetragonal and cubic Na3PS4 have been theoretically and experimentally studied, the dynamics of sodium ions in these systems have been rarely reported. In this study, (100−x)Na3PS4−xCa3N2 (0 ≤ x ≤ 10) glass samples were synthesizing using high‐energy planetary ball‐milling method. These samples were subjected to heat treatment at 280°C for 1 h in an argon atmosphere to obtain glass–ceramic samples. The structures of these samples were characterized via Raman spectroscopy and X‐ray diffraction analysis. The lattice parameter and cell volume of the glass–ceramic samples strongly depended on the x value in (100−x)Na3PS4−xCa3N2 (0 ≤ x ≤ 10). Their ionic conductivities were determined via alternating current electrochemical impedance spectroscopy (EIS). 92Na3PS4−8Ca3N2 glass–ceramics exhibited an ionic conductivity of 8.14 × 10−4 Scm−1 at 25°C. Charge carrier concentration and hopping rate were extracted from the EIS data to determine the ionic conductivities of the samples. The activation energies of DC conductivity and mobile ion formation and migration were also derived from the EIS data to analyze the effect of Ca3N2 doping on the ionic conductivity of the synthesized samples.

Manganese diluted TlInS2 layered semiconductor: Optical, electronic and magnetic properties

Manganese–doped TlInS2 (TlInS2+Mn) layered semiconductors with different doping concentrations of about 0.1 and 0.3 at. percent were investigated. Photo–induced current transient spectroscopy (PICTS) measurements in the temperature range of 80 and 300 K have been made for identifying energy levels related to Mn dopant within the electronic bandgap of TlInS2+Mn crystal. Optical absorption spectra in the photon energy range of ∼1.8–3.1 eV have been extracted by fitting the transmittance spectra of TlInS2+Mn recorded at the temperatures varied from ∼40–300 K. A redshift trend of the absorption edge with increasing of temperature was observed. On the other hand, a blue shift in the absorption edge with Mn doping was observed in the absorption spectra. The Mn dopant induced photoluminescence (PL) was also investigated in the visible region ranging from 320 to 960 nm. Seven peaks were observed in the PL spectra of Mn doped TlInS2 crystal in the regions both ∼960–620 nm (∼1.3–2 eV) and ∼620–320 nm (∼2–3.8 eV) due to the electronic states of Mn ions. Laser–induced breakdown spectroscopy (LIBS) technique was applied to establish of the elemental chemical composition and to confirm presence of each constituent element in TlInS2:Mn. The dc magnetization measurements of TlInS2+Mn performed in a wide temperature range of ∼5 and ∼300 K revealed different (diamagnetic and paramagnetic states) magnetic phases inside the studied temperature range. The X–band electron paramagnetic resonance (ESR) experiments were carried out in the low–temperature phase of TlInS2+Mn to probe the structure of Mn centers in TlInS2. The measurements revealed that the ESR spectrum changes drastically in the low–temperature phase of TlInS2+Mn bulk sample. Finally, a detailed density functional theory (DFT) based computational investigation of electronic band structures, density of states and optical properties of TlInS2+Mn compound has been performed. The results of ab–initio calculations are discussed for three possible states when the manganese atom was doped by replacing either the Tl, In or S atoms in the unit cell of TlInS2. Additionally, the effect of interstitial Mn dopant on the electronic structure and optical properties of TlInS2 material has been simulated.

Pressure-induced amorphization in α-GeO2: Structural evolution and improved dielectric properties

In this paper, we report the investigation of the structure evolution and dielectric properties of α-GeO2 under compression using in-situ Raman spectroscopic measurements, alternate current impedance spectroscopic measurements, and first-principal calculations. It is discovered that the coordination number of Ge in α-GeO2 increases from 4 to 6 at 5.0 GPa, while an amorphous state forms at 11.5 GPa and maintains to ambient conditions. The alternate current impedance spectroscopy measurements revealed that the variation of electrical resistance shows opposite tendencies at pressures against that of the coordination number. This phenomenon is ascribed to the pressure-induced emergence of unbonded oxygen atoms, and thus the increase of the concentration of oxygen ions in the GeO4 tetrahedra. Meanwhile，it is found that the application of pressure-induced amorphization improves the dielectric properties to a certain extent, which is of significant importance to provide a valuable approach for the synthesis of amorphous oxides with better dielectric properties.

Deep Traps in AlN Hydride Vapor Phase Epitaxy Film on Low-Temperature AlN/Sapphire

Deep trap states were examined in c-plane, Al-polar AlN epilayers, deposited via metal organic chemical vapor deposition on 270 nm thick AlN buffer layers on sapphire substrates. Contacts were created using e-beam deposited Ni through a shadow mask, with I-V characteristics revealing a trapped limited current (TLC) regime and voltage-dependent hysteresis upon light-emitting diode illumination. Thermally stimulated current and photothermal ionization current spectroscopy measurements demonstrated a prominent trap activation energy of approximately 0.75 eV and additional trap energies of 0.6, 0.4, 0.25, 1.05, and 1.1 eV. The observed differences in photocurrent responses between forward and reverse biases suggest that forward bias induces electron trapping at deeper levels, influencing the TLC behavior. Comparisons with bulk n-type AlN crystals from previous studies show similarities in deep trap spectra, suggesting commonality in trap characteristics across different AlN samples.

Innovative In Situ Passivation Strategy for High-Efficiency Sb2(S,Se)3 Solar Cells.

An effective defect passivation strategy is crucial for enhancing the performance of antimony selenosulfide (Sb2(S,Se)3) solar cells, as it significantly influences charge transport and extraction efficiency. Herein, a convenient and novel in situ passivation (ISP) technique is successfully introduced to enhance the performance of Sb2(S,Se)3 solar cells, achieving a champion efficiency of 10.81%, which is among the highest recorded for Sb2(S,Se)3 solar cells to date. The first principles calculations and the experimental data reveal that incorporating sodium selenosulfate in the ISP strategy effectively functions as an in situ selenization, effectively passivating deep-level cation antisite SbSe defect within the Sb2(S,Se)3 films and significantly suppressing non-radiative recombination in the devices. Space-charge-limited current (SCLC), photoluminescence (PL), and transient absorption spectroscopy (TAS) measurements verify the high quality of the passivated films, showing fewer traps and defects. Moreover, the ISP strategy improved the overall quality of the Sb2(S,Se)3 films, and fine-tuned the energy levels, thereby facilitating enhanced carrier transport. This study thus provides a straightforward and effective method for passivating deep-level defects in Sb2(S,Se)3 solar cells.

Improved Understanding of PEMFC Stack Durability Testing through Comprehensive In-Situ and Ex-Situ Characterization Techniques

Durability testing of Proton Exchange Membrane Fuel Cells for mobile applications remains a critical challenge. While most academic studies focus on single-cell testing, there are only few publications on stack testing of technical relevant sizes. This study utilizes comprehensive characterization techniques to enhance understanding of PEMFC stack durability, aiming to meet the currently targeted durability targets. A 5,500-hour long-term test, based on the Auto Stack Industry (ASI) test protocol, was performed on a 7-cell short stack of 240 cm² active area. In-situ techniques, such as spatially resolved current density measurement, cyclic voltammetry, and electrochemical impedance spectroscopy, provided real-time degradation insights, while ex-situ methods, including FIB-SEM analysis, infrared thermography or contact angle measurements provided information on material degradation mechanisms. Membrane degradation was found to be negligible. Slight thinning of the cathode indicates carbon corrosion of the catalyst support. Catalyst aging was observed in the form of Pt band formation and Co leaching. Gas diffusion layers showed hydrophobicity loss, and increased resistance in bipolar plates contributed to reduced performance. Our findings demonstrate that PEMFC stacks operated under automotive drive cycle protocols can meet the actual targeted durability objectives. Moreover, it illustrates the degradation phenomena that occur under realistic operating conditions and modes, and how they evolve over the duration of thousands of hours of operation.

Improved Understanding of PEMFC Stack Durability Testing through Comprehensive In-Situ and Ex-Situ Characterization Techniques

Durability testing of Proton Exchange Membrane Fuel Cells for mobile applications remains a critical challenge. While most academic studies focus on single-cell testing, there are only few publications on stack testing of technical relevant sizes. This study utilizes comprehensive characterization techniques to enhance understanding of PEMFC stack durability, aiming to meet the currently targeted durability targets. A 5,500-hour long-term test, based on the Auto Stack Industry (ASI) test protocol, was performed on a 7-cell short stack of 240 cm² active area. In-situ techniques, such as spatially resolved current density measurement, cyclic voltammetry, and electrochemical impedance spectroscopy, provided real-time degradation insights, while ex-situ methods, including FIB-SEM analysis, infrared thermography or contact angle measurements provided information on material degradation mechanisms. Membrane degradation was found to be negligible. Slight thinning of the cathode indicates carbon corrosion of the catalyst support. Catalyst aging was observed in the form of Pt band formation and Co leaching. Gas diffusion layers showed hydrophobicity loss, and increased resistance in bipolar plates contributed to reduced performance. Our findings demonstrate that PEMFC stacks operated under automotive drive cycle protocols can meet the actual targeted durability objectives. Moreover, it illustrates the degradation phenomena that occur under realistic operating conditions and modes, and how they evolve over the duration of thousands of hours of operation.

Conduction band electronic states of ultrathin furan-phenylene co-oligomer on the surfaces of oxidized silicon and of layer-by-layer grown zinc oxide

The paper reports on results of an investigation of the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene (FP5) and the results of an investigation of the interfacial potential barrier upon the formation of these films on the surfaces of (SiO2)n-Si and of layer-by-layer deposited ZnO. Upon deposition of an 8–10 nm thick FP5 film, the total current spectroscopy (TCS) technique was used for investigation within the energy range from 5 eV to 20 eV above EF. FP5 films on the (SiO2)n-Si surface showed a domain structure with a characteristic domain size of the order of 1 micro.m × 1 micro.m and a surface roughness within the domain under 1 nm. In contrast, FP5 on the ZnO surface showed a granular structure with a grain height of 40–50 nm.

Correcting the effect of temperature changes in the measurement results of dielectric response in power transformers as an arrhenius type dielectric with the help of artificial neural network

Polarization and Depolarization Current (PDC) and Frequency Domain Spectroscopy (FDS) measurements are common dielectric response tests in time and frequency domain that are widely used to diagnosis insulation status in power transformer companies. Numerous factors affect the PDC and FDS test results, which the most important of them is temperature variation. To accurately interpret the results of the dielectric response, the effect of temperature on the results in time and frequency domains, must be corrected. In this paper, firstly a 200 MVA transformer is selected as a test object and FDS and PDC tests are performed on it at different temperatures. Then, based on the FDS results performed on a transformer at different temperatures, the parameters of the insulation model have been estimated by using genetic algorithm (GA). Next, with the help of artificial neural network (ANN), the parameters of the insulation model, related to the different temperatures are transferred into the reference parameters. After that, the parameters of the transferred insulation model, the FDS curves are plotted and transferred to the reference temperature curve and the effect of temperature on them is compensated. By using the correlation of the time and frequency domain results, with the help of transferred insulation model parameters, the PDC results are also plotted and transmitted on the reference PDC curve. Finally, with such a method, the effect of temperature on the PDC results is compensated.

Radiation Hardness and Defects Activity in PEA2PbBr4 Single Crystals

AbstractMetal halide perovskites (MHPs) are low‐temperature processable hybrid semiconductor materials with exceptional performances that are revolutionizing the field of optoelectronic devices. Despite their great potential, commercial deployment is hindered by MHPs lack of stability and durability, mainly attributed to ion migration and chemical interactions with the electrodes. To address these issues, 2D layered MHPs are investigated as possible device interlayers or active material substitutes. Here, the 2D perovskite (PEA)2PbBr4 is considered that is recently discussed as promising candidate for X‐ray direct detection. While the increased resilience of (PEA)2PbBr4 radiation detectors has already been reported, the physical mechanisms responsible for such improvement compared to 3D perovskites are not still fully understood. To unravel the charge transport process in (PEA)2PbBr4 crystals thought to underly the device better performance, an investigation technique is adapted previously used on highly resistive inorganic semiconductors, called photo induced current transient spectroscopy (PICTS). It is demonstrated that PICTS can reliably detect three trap states (T1, T2, and T3), and that their evolution upon X‐ray exposure can explain (PEA)2PbBr4 superior radiation tolerance and reduced aging effects. Overall, the results provide essential insights into the electrical characteristics of 2D perovskites and their potential application as reliable direct X‐ray detectors.

Enhanced ionic conductivity of NASICON-type NaTi2(PO4)3 solid electrolytes with sodium-ion conduction: based on NaF-assisted synthesis

The ceramic composite electrolytes in the NaTi2(PO4)3–NaF system were characterised by thermal analysis, X-ray diffraction, Fourier infrared absorption spectroscopy, scanning electron microscope, and impedance spectroscopy. X-ray diffraction confirmed that the ceramic composites have a Na Super Ionic Conductor (NASICON) structure. The scanning electron images showed that the addition of NaF significantly improved the microscopic morphology of the NaTi2(PO4)3 crystals and made the packing of crystal grains closer. The addition of NaF in a certain proportion is beneficial to the growth of crystals, making the crystal grains more compact and improving the density of the solid electrolytes. The ionic conductivity analysis was carried out by alternating current (AC) impedance spectroscopy. The conductivity can be effectively improved when a certain proportion of NaF is added to the ceramic composites. The maximum total conductivity is about 1.50 × 10−5 S·cm−1 obtained when the molar ratio of NaF to NaTi2(PO4)3 reaches 0.4.

Intrinsic self-sensing piezoresistive behaviors of ultra-high strength alkali-activated concrete

In this work, the self-sensing piezoresistive behaviors of carbon fiber (CF)-reinforced ultra-high strength concrete (UHSC) are investigated using alternating current impedance spectroscopy (ACIS) technique. The effects of different fiber contents, fiber lengths, and curing ages are considered. The electrical behaviors of alkali-activated slag (AAS)-based UHSC (AAS-UHSC) and ordinary Portland cement (OPC)-based UHSC (OPC-UHSC) at similar strength from 80 to 110 MPa are compared. The findings reveal that the intrinsic electrical resistivity of AAS-UHSC is significantly lower than that of OPC-UHSC, approximately 1/30 of the latter. The addition of CF results in a substantial reduction in electrical resistivity for both UHSC types, with reductions of up to 96 %, and shows better compatibility with the AAS-UHSC matrix. The piezoresistive properties of CF-reinforced UHSC are investigated using ACIS at a fixed frequency and further evaluated by parameters including sensitivity, linearity, repeatability, and hysteresis. The results indicate that plain OPC-UHSC does not exhibit piezoresistivity, whereas the addition of CF enhances both the sensitivity and linearity of piezoresistivity. In contrast, AAS-UHSC demonstrates inherent piezoresistive behaviors even without CF. The introduction of 0.5 wt% CF improves the sensitivity (by up to 50 %) and linearity (R2 increased from 0.76 to above 0.90) of piezoresistivity in AAS-UHSC. However, increasing the CF content to 1.0 wt% diminishes the sensitivity (by up to 62.5 %) due to decreased fiber dispersion uniformity. Moreover, the addition of 1.0 wt% 8-mm CF reduces the hysteresis of UHSC regardless of the binder type, with the maximum reduction reaching 62.2 %.

Identification of shallow trap centers in InSe single crystals and investigation of their distribution: A thermally stimulated current spectroscopy

Identification of trap centers in semiconductors takes great importance for improving the performance of electronic and optoelectronic devices. In the present study, we employed the thermally stimulated current (TSC) method within a temperature range of 10–280 K to explore trap centers in InSe crystal—a material with promising applications in next-generation devices. Our findings revealed the existence of two distinct hole trap centers within the InSe crystal lattice located at 0.06 and 0.14 eV. Through the leveraging the Tstop method, we offered trap distribution parameters of revealed centers. The results obtained from the experimental methodology employed to investigate the distribution of trap centers indicated that one of the peaks extended between 0.06 and 0.13 eV, while the other spanned from 0.14 to 0.31 eV. Notably, our research uncovers a remarkable variation in trap density, spanning one order of magnitude, for every 10 and 88 meV of energy variation. The results of our research present the characteristics of shallow trap centers in InSe, providing important information for the design and optimization of InSe-based optoelectronic devices.

Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

The deep-level drain current transient spectroscopy (Id-DLTS) measurements of Al-doped SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) strongly suggest that the reduction in the channel mobility at low temperatures is related to a shallow trap detectable at 70 K. Using the Shockley–Reed–Hall (SRH) theory, the level of this trap has been extracted to be around 0.15 eV below the conduction band minimum of SiC. Density functional theory (DFT) calculations of AlSiNCAlSi and AlSiOCAlSi defect complexes have found one configuration of the AlSiOCAlSi complex, which has a charge transition level within the SRH extracted trap level range. Therefore, we suggest that these AlSiOCAlSi defects are likely candidates for traps responsible for the channel mobility reduction.

Effect of In and Sc Co-doping on electrochemical performance on bulk and grain boundaries of La1.9In0.05Sc0.05Ce2O7 proton conductors

In this paper, fluorite-type proton conductors La1.9In0.1Ce2O7, La1.9In0.05Sc0.05Ce2O7 and La1.9Sc0.1Ce2O7 (referred to as LCO-I, LCO-IS and LCO-S), were synthesized by the low-cost solid-state reaction method. The formation process and structure of single-doped LCO-I and LCO-S and co-doped LCO-IS were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The electrochemical performance was studied using alternating current electrochemical impedance spectroscopy (EIS). XRD results showed that the synthesized material had a fluorite structure, without any impurity phase. SEM micrographs showed that LCO-I, LCO-S and LCO-IS had a fairly dense grain. EDS analysis confirmed that the elemental composition of LCO-I, LCO-S and LCO-IS was evenly distributed and contained no impurities. LCO-IS exhibited superior conductivity among related materials, and the total conductivity of LCO-IS in oxygen was 9.49 × 10−3 S cm−1 at 800 °C. The effects of co-doping on bulk and grain boundary properties were analyzed using the distribution of relaxation time (DRT). The bulk and grain boundary conductivity of co-doped LCO-IS was higher than that of single-doped LCO-I and LCO-S. LCO-IS showed good proton conductivity. In the temperature range of 300–800 °C, the proton conductivity was 1.35 × 10−6–4.43 × 10−3 S cm−1. For LCO-I and LCO-IS electrolyte supported symmetric cells (Ag ǀ LCO-I (LCO-IS) ǀ Ag), their open circuit voltages were 0.99 V and 0.97 V, respectively, at 700 °C, and the power densities were 8.8 mW cm−2 and 9.34 mW cm−2. This demonstrates the potential of LCO-IS to be used in various devices as a proton-conducting electrolyte.