Current Plasma-enhanced Chemical Vapor Deposition Research Articles

Targeting Biomechanical Endurance of Dental-Implant Abutments Using a Diamond-Like Carbon Coating.

Abutment components (i.e., fixtures associated with oral implants) are essentially made of titanium (Ti), which is continuously exposed to the hash oral environment, resulting in scratching. Thus, such components need to be protected, and surface treatments are viable methods for overcoming long-term damage. Diamond-like carbon (DLC), an excellent protective material, is an alternative surface-treatment material for Ti abutments. Here, we demonstrate that a silicon interlayer for DLC film growth and the pulsed-direct current plasma-enhanced chemical vapor deposition (DC-PECVD) method enables the deposition of an enhanced protective DLC film. As a result, the DLC film demonstrated a smooth topography with a compact surface. Furthermore, the DLC film enhanced the mechanical (load-displacement, hardness, and elastic modulus) and tribological properties of Ti as well as increased its corrosion resistance (16-fold), which surpassed that of a bare Ti substrate. The biofilm formed (Streptococcus sanguinis) after 24 h exhibited an equal bacterial load (∼7 Log colony-forming units) for both the groups (Ti and DLC). In addition, the DLC film exhibited good cytocompatibility, owing to its noncytotoxicity toward human gingival fibroblast cells. Therefore, DLC deposition via DC-PECVD can be considered to be a promising protective and cytocompatible alternative for developing implant abutments with enhanced mechanical, tribological, and electrochemical properties.

Application of NiO deposited by atomic layer deposition for carbon nanotubes catalytic growth

Carbon nanotubes (CNTs) are a unique object for various kinds of electronic devices. At the same time, an important task remains the development of catalytic structure synthesis methods for repeatability and uniform growth of CNTs. One of such methods is atomic layer deposition (ALD). The article considers the effect of the initial NiO layer thickness obtained by the ALD method on the growth of carbon nanotubes array. Deposition of the CNTs was carried out by the direct current plasma-enhanced chemical vapor deposition method using a direct current discharge in an acetylene and ammonia at 680 °C. Before CNT deposition, the NiO film was reduced to metallic nickel in an ammonia atmosphere at 680 °C. Samples were studied by scanning and transmission electron microscopy. As a result, the thickness of the initial NiO film for intensive CNT growth was in the range of 3.5 to 3.9 nm. CNTs had a “multi-walled” structure and consisted of 15 ± 5 graphene layers. The density of the tubes was about 7.5 ± 0.2 × 1010 cm−2, and the length was 6–7.5 µm.

Interface Engineering by Intermediate Hydrogen Plasma Treatment Using Dc-PECVD for Silicon Heterojunction Solar Cells

The high open-circuit voltage (VOC) in silicon heterojunction solar cells is attributed to the superior amorphous–crystalline silicon interface passivation. In this work, we investigated a method called intermediate hydrogen plasma treatment (I-HPT) in which the intrinsic amorphous silicon is exposed to hydrogen plasma in between the deposition using direct current (d.c.) plasma-enhanced chemical vapor deposition. This method can not only enhance the surface passivation but also find industrial application due to its ease of integration in the production line. Fourier transform infrared spectroscopy reveals that I-HPT makes the bulk of the amorphous matrix more disordered. We anticipate that the improvement in passivation comes from the diffusion of hydrogen from the bulk to the interface and shifting of the film closer to the “amorphous-to-microcrystalline” transition regime. Our optimized I-HPT method can obtain an implied VOC of 746 mV without annealing, which corresponds to a low surface recombination velocity of 3.2 cm/s. Therefore, we propose the I-HPT method as an alternative to high-temperature annealing which can reduce a fabrication step and processing time. The I-HPT films characterized by Raman spectroscopy do not show any hydrogen-induced crystallization. We have also demonstrated the proof of concept by applying I-HPT to a silicon heterojunction solar cell which shows ∼15 mV increase in VOC in the device and an absolute increase in efficiency by 0.3% as compared to a cell with no HPT.

Influence of NiO ALD Coatings on the Field Emission Characteristic of CNT Arrays.

The paper presents a study of a large-area field emitter based on a composite of vertically aligned carbon nanotubes covered with a continuous and conformal layer of nickel oxide by the atomic layer deposition method. The arrays of carbon nanotubes were grown by direct current plasma-enhanced chemical vapor deposition on a pure Si substrate using a nickel oxide catalyst which was also deposited by atomic layer deposition. The emission characteristics of an array of pure vertically oriented carbon nanotubes with a structure identical in morphology, covered with a layer of thin nickel oxide, are compared using the data from a unique computerized field emission projector. The deposition of an oxide coating favorably affected the emission current fluctuations, reducing them from 40% to 15% for a pristine carbon nanotube and carbon nanotube/nickel oxide, respectively. However, the 7.5 nm nickel oxide layer coating leads to an increase in the turn-on field from 6.2 to 9.7 V/µm.

Diamond-like carbon-deposited films: a new class of biocorrosion protective coatings

A series of diamond-like carbon thin films was applied on AISI 316L stainless steel substrates through a pulsed-direct current plasma-enhanced chemical vapor deposition technique to study the effects of working parameters (bias voltage and deposition pressure) on the microstructure and biocorrosion resistance of films. Raman spectra indicated that under low bias voltage and higher deposition pressure, the films possess a higher amount of sp2structure, lower internal stress and an improved biocorrosion resistance due to a smooth and defect-free morphology. The lamellar sp2structure blocked a penetration of corrosive entities. The oxygen content of locally corroded areas (∼11·9 wt.%) was much higher than that of non-corroded areas (2·6 wt.%) corroborating galvanic corrosion between carbide and nitride phases. Moreover, by increasing the deposition pressure from 20 to 40 Pa, the internal stress decreased from 1·03 to 0·82 GPa. The results confirmed that it is possible to tailor the properties of the coatings such as structural composition and particularly biocorrosion resistance by the control over the working parameters. Such anticorrosive diamond-like coatings could benefit biomedical implants used for tissue regeneration.

The effects of phase transformation on the structure and mechanical properties of TiSiCN nanocomposite coatings deposited by PECVD method

In the present study, the effects of phase transformations on the structure and mechanical properties of TiSiCN coatings were investigated. TiSiCN nanocomposite coatings were deposited on AISI H13 hot-work tool steel by a pulsed direct current plasma-enhanced chemical vapor deposition process at 350 or 500 °C, using TiCl4 and SiCl4 as the precursors of Ti and Si, respectively, in a CH4/N2/H2/Ar plasma as the source of carbon and nitrogen and reducing environment. Some samples deposited at 350 °C were subsequently annealed at 500 °C under Ar atmosphere. Super hard self-lubricant TiSiCN coatings, having nanocomposite structure consisting of TiCN nanocrystals and amorphous carbon particles embedded in an amorphous SiCNx matrix, formed through spinodal decomposition in the specimens deposited or annealed at 500 °C. In addition, it was revealed that either uncomplete or relatively coarse phase segregation of titanium compounds was achieved during deposition at 350 °C and 500 °C, respectively. On the contrary, by deposition at 350 °C followed by annealing at 500 °C, a finer structure was obtained with a sensible improvement of the mechanical properties of coatings. Accordingly, the main finding of this work is that significant enhancement in key properties of TiSiCN coatings, such as hardness, adhesion and friction coefficient, can be obtained by deposition at low temperature and subsequent annealing at higher temperature, thanks to the formation of a fine grained nanocomposite structure.

Diamond-like carbon thin films prepared by pulsed-DC PE-CVD for biomedical applications

In the present research, diamond-like carbon (DLC) thin films were applied on steel substrates by means of pulsed-direct current (DC) plasma-enhanced chemical vapor deposition (PE-CVD). The effects of bias voltage and deposition pressure on the films’ structure and properties were investigated. The Raman spectra of the films revealed features typical of G and D bands, indicating the formation of a DLC phase. The results demonstrate that the sp3 carbon fraction or the so-called diamond-like character of the DLC films increased with increasing bias voltage. Moreover, an increase in the bias voltage resulted in a decrease in the film thickness from 800 to 200 nm. Also, the DLC films prepared at a higher deposition pressure showed a higher fraction of sp2-bonded carbon – that is, graphitic domains. Furthermore, it was found that the variation in the bias voltage and deposition pressure also affected the internal stress values of the DLC films in a way that they increased from 1 to 11 GPa when the bias voltage was increased from 475 to 675 V. The effectiveness of DLC films formed on the steel substrates can pave the way for developing a new class of advanced materials to enhance the performance of stainless steel for biomedical applications.

Fabrication of a compact glass-sealed x-ray tube with carbon nanotube cold cathode for high-resolution imaging

A glass-sealed x-ray tube with field emission electron sources has been fabricated using carbon nanotubes (CNTs) grown on a silicon substrate by direct current plasma-enhanced chemical vapor deposition. Here, the authors report on the fabrication of CNT-based emitters, the field emission characteristics of these emitters, and the properties of the glass-sealed x-ray tube. The field emission produced a current of 5 mA with an electron transmission rate of 91.1% in a high-vacuum chamber. The glass-sealed x-ray tube had a conventional design and comprised a reflection anode, an evaporation getter, and a vacuum-sealed glass tube without additional focusing electrode requirements for ease of commercialization. Using this x-ray tube, the authors obtained x-ray images of objects, including a human finger and a commercial universal serial bus (USB) flash drive. The x-ray image allowed a 100 μm metal wire to be distinguished in the USB flash drive. The x-ray images were obtained at a dose rate of 1944 mrad/h, which represents a relatively low dose. The grown CNT emitters showed stable field emission after electrical aging. These CNT-based glass-sealed x-ray tubes are expected to become a platform for the fabrication of medical and dental x-ray systems.

Recent Research Progress of Carbon Nanotube Arrays Prepared by Plasma Enhanced Chemical Vapor Deposition Method

Preparing carbon nanotube (CNT) arrays by plasma enhanced chemical vapor deposition (PECVD) method can dramatically reduce the deposition temperature, which makes it possible for in-situ fabrication of CNT-based nanoelectronic devices. In this paper, up to date research progress of CNT arrays prepared by PECVD method was presented, including radio frequency PECVD, direct current PECVD and microwave PECVD. Then, morphology and quality of CNT arrays were compared. In the end, we analyzed the possible challenges encountered through CNT array preparation by PECVD method at the moment and in the future.

Diamond platelets produced by chemical vapor deposition

Diamond platelets of sub-micrometer size were obtained by chemical vapor deposition technique from CH4/H2 gas mixture activated by a direct current discharge. Comprehensive characterization of the diamond platelets was performed with use of scanning and transmission electron microscopy. The diamond platelet crystallites were found to be in the deposited material in form of stacked or isolated hexagonal platelets in combination with polyhedron crystallites. Six-fold rotational symmetry and composition of stacked (111) atom planes in the diamond platelets was revealed from analysis of the electron diffraction patterns. The structure and possible growth mechanisms of the platelets in the case of direct current plasma-enhanced chemical vapor deposition are discussed.

Field emission current from a junction field-effect transistor

Fabrication of a titanium dioxide/carbon nanotube (TiO2/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO2 nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO2/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO2/CNT hetero-structure is also investigated, and well modeled.

Vertically Aligned Carbon Nanotube Emitter on Metal Foil for Medical X-Ray Imaging

A simple method is proposed for growing vertically aligned carbon nanotubes on metal foil using the triode direct current plasma-enhanced chemical vapor deposition (PECVD). The carbon nanotube (CNT) electron emitter was fabricated using fewer process steps with an acid treated metal substrate. The CNT emitter was used for X-ray generation, and the X-ray image of mouse's joint was obtained with an anode current of 0.5 mA at an anode bias of 60 kV. The simple fabrication of a well-aligned CNT with a protection layer on metal foil, and its X-ray application, were studied.

Transfer of Vertically Aligned Carbon Nanofibers to Polydimethylsiloxane (PDMS) While Maintaining their Alignment and Impalefection Functionality

Vertically aligned carbon nanofibers (VACNFs) are synthesized on Al 3003 alloy substrates by direct current plasma-enhanced chemical vapor deposition. Chemically synthesized Ni nanoparticles were used as the catalyst for growth. The Si-containing coating (SiN(x)) typically created when VACNFs are grown on silicon was produced by adding Si microparticles prior to growth. The fiber arrays were transferred to PDMS by spin coating a layer on the grown substrates, curing the PDMS, and etching away the Al in KOH. The fiber arrays contain many fibers over 15 μm (long enough to protrude from the PDMS film and penetrate cell membranes) and SiN(x) coatings as observed by SEM, EDX, and fluorescence microscopy. The free-standing array in PDMS was loaded with pVENUS-C1 plasmid and human brain microcapillary endothelial (HBMEC) cells and was successfully impalefected.

Visible photoluminescence from silicon-incorporated diamond like carbon films synthesized via direct current PECVD technique

Silicon-incorporated diamond like carbon (Si-DLC) films were deposited via DC plasma-enhanced chemical vapor deposition (PECVD) on glass and alumina substrates at a substrate temperature of 473 K. The precursor gas used was acetylene and for silicon incorporation tetraethyl orthosilicate dissolved in methanol was used. Silicon atomic percentage in the films was varied from 0% to 19.3% as measured from energy dispersive X-ray analysis. Fourier transformed infrared spectroscopy studies depicted the presence of Si–C, Si–H and Si–H 2 bonding within the films. The binding energies of C 1s, Si 2s and Si 2p were determined from X-ray photoelectron spectroscopic studies. UV–vis–NIR spectroscopic studies were used to determine the optical gaps as well as the Urbach parameters of the samples. Room temperature photoluminescence study showed a broad peak centered at around 467 nm. Also the peak intensity was found to increase monotonically with Si percentages. The results are discussed in terms of the electronic structure of a-C:H, the doping induced defect states and the enhanced carbon dangling bonds via the formation of more sp 3 hybridized carbon network.

Growth of carbon nanowalls at atmospheric pressure for one-step gas sensor fabrication

Carbon nanowalls (CNWs), two-dimensional "graphitic" platelets that are typically oriented vertically on a substrate, can exhibit similar properties as graphene. Growth of CNWs reported to date was exclusively carried out at a low pressure. Here, we report on the synthesis of CNWs at atmosphere pressure using "direct current plasma-enhanced chemical vapor deposition" by taking advantage of the high electric field generated in a pin-plate dc glow discharge. CNWs were grown on silicon, stainless steel, and copper substrates without deliberate introduction of catalysts. The as-grown CNW material was mainly mono- and few-layer graphene having patches of O-containing functional groups. However, Raman and X-ray photoelectron spectroscopies confirmed that most of the oxygen groups could be removed by thermal annealing. A gas-sensing device based on such CNWs was fabricated on metal electrodes through direct growth. The sensor responded to relatively low concentrations of NO2 (g) and NH3 (g), thus suggesting high-quality CNWs that are useful for room temperature gas sensors.PACS: Graphene (81.05.ue), Chemical vapor deposition (81.15.Gh), Gas sensors (07.07.Df), Atmospheric pressure (92.60.hv)

Thin film composites of nanocrystalline ZrO2 and diamond-like carbon: Synthesis, structural properties and bone cell proliferation

We report on the synthesis of thin composites of diamond-like carbon (DLC) and nanocrystalline ZrO(2) deposited using pulsed direct current plasma-enhanced chemical vapor deposition at low temperatures (<120 degrees C). Films containing up to 21at.% Zr were prepared (hydrogen was not included in the calculation) and their structural and surface properties were determined using a number of spectroscopic methods and contact angle measurements. Bone cell adhesion to the films was studied using a 3 day cell culture with osteoblasts. These nanocomposites (DLC-ZrO(2)) consist of tetragonal ZrO(2) nanocrystals with an average size of 2-5 nm embedded in an amorphous matrix consisting predominantly of DLC. The surface water contact angle of the films increased from approximately 60 degrees to 80 degrees as the Zr content increased from 0 to 21at.%. The cell culture study revealed that although the cell counts were not significantly different, the morphology of the osteoblasts growing on the DLC-ZrO(2) nanocomposites was markedly different from that of cells growing on DLC alone. Cells growing on the DLC-ZrO(2) surfaces were less spread out and had a smaller cell area in comparison with those growing on DLC surfaces. In some areas on the DLC-ZrO(2) surfaces, large numbers of cells appeared to coalesce. It is postulated that the difference in cell morphology between osteoblasts on DLC-ZrO(2) surfaces and DLC surfaces is related to the presence of very small tetragonal nanocrystals of ZrO(2) in the composite film.

Active-Matrix Microelectrode Arrays Integrated With Vertically Aligned Carbon Nanofibers

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> In this letter, we have successfully integrated vertically aligned carbon nanofibers (VACNFs) onto active matrix thin-film transistor (TFT) and demonstrate a new microelectrode array (MEA) platform. The materials and processes of the bottom gate inverted staggered TFT structure were designed to be compatible with the requisite high-temperature <formula formulatype="inline"><tex Notation="TeX">$(\sim\! \hbox{700}\ ^{\circ}\hbox{C})$</tex></formula> and direct current plasma-enhanced chemical vapor deposition VACNF growth process. The critical device integration issues are elaborated, and initial device characteristics are reported. This device platform provides great potential as an advanced MEA for direct cell sensing, probing, and recording with a high electrode density and active addressability. </para>

The nanostructured phase transition of superhard Ti–Si–C–N coatings

Ti–Si–C–N coatings with different Si contents were synthesized by means ofpulsed direct current plasma-enhanced chemical vapor deposition using aTiCl4,SiCl4,CH4,N2,H2 and Ar gas mixture. A complex phase transition has been identified which is stronglycontrolled by the silicon content in the coatings. Transmission electron microscopy(TEM) and x-ray diffraction (XRD) results indicate that increasing Si contentleads to a phase transition from a solid solution (Ti, Si)(C, N) to a dual-phaseTi (C,N)+TiSi2 structure, andthen to a two-phase Ti (C,N)+SiC structure, and that the changes in grain size and lattice parameter coincidewith the phase transition. The Ti–Si–C–N coatings with high Si contents(≥4.3 at.%) possess a superhigh hardness (43–52 GPa) due to grain refinement/grain boundaryhardening and compressive stress/dispersion hardening of the hard, nanosized crystallineTiSi2 or SiC dispersed in the matrix.

Transmission electron microscopy microstructural characterization of Ti–Si–C–N coatings

A new type of Ti–Si–C–N coatings deposited on high-speed steel substrate by means of pulsed direct current (dc) plasma-enhanced chemical vapor deposition was investigated. The as-deposited coatings were characterized systematically by using energy-dispersive x-ray spectroscopy, x-ray diffraction (XRD), transmission electron microscopy (TEM), and microhardness with particular attention paid to the microstructure of the coatings. It has been shown that C content has a profound effect on the microstructure and hardness of coatings. TEM and XRD analyses revealed that these coatings consist of the dominate Ti(C, N) with a silicide (TiSi2, Si3N4, or SiC, depending on the C content in the coatings). The crystallite sizes are in the range of 8–35 nm, which decrease with increasing C content. The Ti–Si–C–N coatings with high C content (25.2–38.6 at.%) possess superhardness (41–48 GPa). This can be attributed to the grain refinement/grain boundary hardening and dispersion hardening of the hard, nanosized crystalline Si3N4 or SiC formed in the deposition.

Effect of deposition pressure on the adhesion and tribological properties of a-CN x H films prepared by DC-RF-PECVD

Hydrogenated carbon nitride (a-CNxH films) was deposited on n-type single-crystal Si (100) by direct current radio frequency plasma-enhanced chemical vapor deposition (DC-RF-PECVD), under the working pressure of 5.0–17.0 Pa, using the CH4 and N2 as feedstock. The composition and surface morphology of the a-CNxH films were characterized by means of Raman spectroscopy and atomic force microscopy, while the Young’s modulus, elastic recovery, adhesion strength, and tribological properties were evaluated using nano-indentation, scratch test and friction test system. It was found that the surface roughness and Raman spectra peak intensity ratio ID/IG of the films increased with the increase of working pressure, while the Young’s modulus, elastic recovery and adhesion strength of the films significantly decreased. Moreover, the tribological properties of the films also varied with the working pressure. The wear life sharply increased with the increase of working pressure from 5.0 Pa to 7.5 Pa, further, an increase in the deposition pressure led to a gradual decrease in the wear life, consequently, the a-CNxH film deposited at 7.5 Pa exhibited the longest wear life. The deposition pressure seemed to have slight effect on the average friction coefficients, whereas the surface roughness and adhesion strength have deteriorated with increasing deposition pressure.