Current Injection Research Articles

Grounding grid effective area and impulsive impedance considering statistical–probabilistic characteristics of lightning currents

The grounding grid transient behavior is an important substation design criterion. This behavior is determined through interaction with impulsive currents typical of lightning. Based on the technical literature, the behavior in question is determined considering fixed current waves, with median parameters (peak values and front and tail times etc.). Therefore, important statistical–probabilistic characteristics of lightning currents, such as correlations and statistical regressions, are not included. From this perspective, this paper includes research into the sensitivity of impulsive impedance and effective area values of substation grounding grids in relation to the waveform of currents typical of the first return strokes. The results (original) illustrate significant sensitivity of the grids transient behavior in relation to those mentioned statistical–probabilistic characteristics, considering a wide range of resistivities in both current injection points considered in this study.

A GUI-BASED DATA ACQUISITION SYSTEM FOR EIT USING TWO CURRENT INJECTION METHODS

The current injection method played an essential role in the data quality of impedance measurement using the electrical impedance tomography (EIT) technique. Previous studies have largely utilized only a single current injection method with limited interface access, which restricts the effectiveness of EIT systems. In this paper, a graphical user interface (GUI)-based data acquisition system was designed to improve user interaction and optimize the control system. The system was equipped with multiple current injection methods, allowing researchers to choose which method to use in the measurement process. The designed hardware comprises a V-to-I converter circuit, multiplexer, electrodes, peak detector, and filter circuit. Testing results indicate that the V to I converter circuit has an average peak difference between voltage and current of 4.86% and an average error of 0.69% in the peak detector circuit. The multiplexer circuit switches quickly and consistently, while the filter circuit remains stable at the 50 kHz frequency used in this study. These results demonstrate that the designed circuits perform adequately and effectively, ensuring reliable and accurate measurements. Additionally, the data acquisition software, presented as a GUI, effectively facilitates the selection of current injection methods and the display of boundary data simulation (BDS) on the object. This is demonstrated by the spatial inhomogeneity patterns visible through BDS in both the adjacent and opposite methods

Coupled distributed feedback laser system at 820 nm for THz beat-frequency generation.

We present a coupled distributed feedback (DFB) laser system, based on AlGaAs/GaAs epitaxially grown compound semiconductor, with electroluminescence near 820 nm. This DFB laser system supports two lateral modes sharing a Bragg grating, thereby enabling simultaneous lasing operation at two different frequencies. We recorded a dual-mode operation with a 4.2 nm wavelength spacing, corresponding to a 1.86 THz beat frequency, and an output power of 14.7 mW at an injection current of 195 mA. Compared to previous works on dual-mode DFB lasers, this design simplifies the fabrication process, potentially enables tunability of the beat frequency, and offers greater compatibility with low temperature grown GaAs (LT-GaAs) high-frequency photodetectors.

Precision-Targeted Injection Laryngoplasty and Longitudinal Biomaterial Effects Evaluation Using High-resolution Ultrasonography in a Rat Model.

Current laryngeal injection models rely on the transoral route and are suboptimal due to limited view, narrowed working space, and the need to sacrifice animals for investigation of the injectables. In the present study, a novel surgical model for laryngeal intervention therapy utilizing an ultra-high frequency ultrasound imaging system was proposed. Based on this system, we developed a systemic evaluation approach, from guidance of the injection process, documentation of the injection site of the material, to in vivo longitudinal follow-up on the augmentation and medialization effect by analyzing the ultrasonography data. In vivo animal study. Academic institution. Injection laryngoplasty with hyaluronic acid under ultrasonography guidance was performed on Sprague-Dawley rats one week after induced unilateral vocal paralysis. Ultrasonography was performed at preinjection, immediately postinjection, on Day 2, Day 7 and then weekly for 4 weeks to obtain measurements, including the glottic area, angle between bilateral folds, and vocal fold width ratio. Laryngoscopic and histologic studies were also performed. Unilateral injections to the paralyzed fold were successfully performed as demonstrated by ultrasonographic, laryngoscopic, and histologic studies. The width ratio was significantly increased after injection for 4 weeks, while the glottic airway area was unchanged. Here, a novel surgical model for laryngeal injection utilizing ultrasonography in rats was established. In addition to providing visual guidance for precise localization of the injection, robust documentation of the treatment effect was also demonstrated. This methodology could be beneficial for screening therapeutic agents for treatment of glottic insufficiency.

Continuous wave operation of broad area and ridge waveguide laser diodes at 626 nm

AbstractThe authors present continuous wave (CW) high‐power broad area and ridge waveguide lasers with laser emission at 626 nm at room temperature. For this, the authors employ GaAs‐based diode lasers in the AlGaInP system for laser emission at 626 nm at room temperature. The laser structure is grown on three‐inch wafers by metal organic vapour phase epitaxy. Broad area and ridge waveguide lasers are fabricated. Pulsed broad area laser characterisation on bar level shows laser operation at 20 C heat sink temperature. The authors measured peak lasing wavelengths as short as 625 nm and total maximum output power of both facets up to 1.4 W at an injection current of 2 A. Both, broad area and ridge waveguide lasers show laser operation and CW excitation at room temperature. The ridge waveguide lasers emit output powers of over 90 mW at 626 nm at a maximum injection current of 200 mA with a nearly diffraction‐limited beam profile.

Visualization study on the flame propagation and distribution characteristics and exploration of optimal injection strategy in ammonia/diesel dual direct injection mode

With the increasing shortage of fossil fuels and the worsening carbon emission problems, ammonia has been attracted widely to alleviate the current challenges faced by internal combustion engines. Igniting direct injection of liquid ammonia by diesel may be a measure to achieve effective ammonia application, while the research on the characteristics of combustion and the unburned ammonia emission is little. Therefore, this paper studies the effects of ambient parameters and injection parameters on the characteristics of diesel ignition and flame propagation and distribution based on a constant volume combustion chamber, through the shadow method. The results indicate that the premise to ensure that ammonia can fully participate in combustion is that the flame can backpropagate to the junction of the two sprays. The current optimal injection strategy is the simultaneous injection of diesel and ammonia combined with a complete ammonia injection before the maintained flame. At a low temperature and high diesel injection pressure, ammonia will participate in combustion after a delay, which may result in a relatively low heat release rate and high unburned ammonia emissions. Overall, the paper can provide important references for professional researchers which is of great significance for the development of diesel/ammonia engines.

Improved assembly DC circuit breaker based on resonant current injection.

DC circuit breakers (DCCBs) with high breaking capacity and low cost are necessary for quick fault clearance in DC networks. The assembly DC circuit breakers (ADCCBs) have a main breaking section (MBS) and a sub-breaking sections (SBS) for each line, which greatly reduce the cost. But in conventional operation, it bears high voltage for a long time when there is a main switch grounding process in any line fault action. To address this problem, a multiport assembly circuit breaker based on current injection (CI-MPACB) is proposed, which is able to generate a resonant current with increasing amplitude by controlling the duty cycle of Integrated Gate-Commutated Thyristors (IGCTs). Then the resonant current is injected into the SBS to generate current zero crossing and arc extinction. A complex frequency domain circuit analysis is performed on the MBS to describe the action logic as well as the commutation characteristics. In addition, the parameters of each component of the MBS are subject to multiple constraints and reasonable design to ensure the fault current could be cut off quickly and reliably. The cost of existing design is greatly reduced due to the design idea of resonant current injection device parameter selection. Finally, a PSCAD/EMTDC simulation confirms the opening viability of CI-MPACB and the accuracy of the parameter design. The test results show that the designed CI-MPACB can cut off DC fault lines.

Dependability Analysis of the Negative-Sequence Turn-to-Turn Fault Protection Schemes for MMC-HVDC Converter Transformers

This paper addresses two complex areas of research: the detection of turn-to-turn faults (TTF) in power transformers and the impact of inverter-based resources on the TTF protection scheme operation. Detecting turn-to-turn faults in power transformers by protection algorithms poses a challenge due to the minimal fault currents observed at transformer terminals. Yet, the demand for dependable TTF protection is very high because of the high fault currents inside the shorted turns and the resulting damage consequences. On the other hand, for such sensitive protection, adverse conditions such as transformer inrush currents or CT errors may lead to protection maloperation. Moreover, the fault current characteristic of the inverter-based source infeed is very different compared to the synchronous machine infeed, particularly concerning the negative-sequence current used in the TTF protection schemes, which calls for thorough research analysis. A simulation model of the converter transformer capable of simulating TTFs, and the Modular Multilevel Converter (MMC) for a High Voltage Direct Current (HVDC) transmission link, has been developed. The test results of turn-to-turn fault protection schemes in inverter-based generation-dominated power systems compared to the synchronous generator infeed are presented. The negative-sequence current protection quantities are analysed in more detail for TTFs with small and large number of shorted turns, i.e. without and with reactive negative-sequence current injection by the MMC control. Finally, the paper assesses the dependability of the transformer differential protection and sensitive TTF protection schemes in detecting faults with different numbers of shorted turns and fault resistance for TTFs occurring in the star and delta winding of the converter transformer.

Sex differences in membrane properties and cellular excitability of dopamine D1 receptor-expressing neurons within the shell of the nucleus accumbens of pre- and mid-adolescent mice

BackgroundThe transition from childhood to adulthood, or adolescence, a developmental stage, is characterized by psychosocial and biological changes. The nucleus accumbens (NAc), a striatal brain region composed of the core (NAcC) and shell (NAcSh), has been linked to risk-taking behavior and implicated in reward seeking and evaluation. Most neurons in the NAc are medium spiny neurons (MSNs) that express dopamine D1 receptors (D1R +) and/or dopamine D2 receptors (D2R +). Changes in dopaminergic and glutamatergic systems occur during adolescence and converge in the NAc. While there are previous investigations into sex differences in membrane excitability and synaptic glutamate transmission in both subdivisions of the NAc, to our knowledge, none have specified NAcSh D1R + MSNs from mice during pre- and mid-adolescence.MethodsSagittal brain slices containing the NAc were prepared from B6.Cg-Tg(Drd1a-tdTomato)6Calak/J mice of both sexes from postnatal days 21–25 and 35–47, representing pre- and mid-adolescence, respectively. Whole-cell electrophysiology recordings were collected from NAcSh D1R + MSNs in the form of membrane-voltage responses to current injections, to assess membrane properties and action potential waveform characteristics, and spontaneous excitatory postsynaptic currents (sEPSCs) to assess glutamatergic synaptic activity.ResultsRelative to pre-adolescent males, pre-adolescent female NAcSh D1R + MSNs exhibited a less hyperpolarized resting membrane potential, increased input resistance, and smaller action potential afterhyperpolarization amplitudes. During mid-adolescence, decreased input resistance and a shorter action potential duration in females were the only sex differences observed.ConclusionsTaken together, our results indicate that NAcSh D1R + MSNs in mice exhibit sex differences in membrane properties and AP waveform during pre-adolescence that are overall indicative of increased cellular excitability in females and are suggestive of possible sex differences in glycine receptors, inwardly-rectifying potassium channels, and large conductance voltage-gated potassium channels. These differences do not appear to persist into mid-adolescence, when sex was observed to affect input resistance oppositely to that of pre-adolescence and AP waveform in a manner suggestive of differences in voltage-gated potassium channels.

Minimization of Parasitic Capacitance between Skin and Ag/AgCl Dry Electrodes.

Conventional dry electrodes often yield unstable results due to the presence of parasitic capacitance between the flat electrode surface and the non-uniform skin interface. To address this issue, a gel is typically placed between the electrodes to minimize parasitic capacitance. However, this approach has the drawbacks of being unsuitable for repeated use, limited lifetime due to gel evaporation, and the possibility of developing skin irritation. This is particularly problematic in underserved areas since, due to the cost of disposable wet electrodes, they often sterilize and reuse dry electrodes. In this study, we propose a method to neutralize the effects of parasitic capacitance by attaching high-value capacitors to the electrodes in parallel, specifically when applied to pulse wave monitoring through bioimpedance. Skin capacitance can also be mitigated due to the serial connection, enabling stable reception of arterial pulse signals through bioimpedance circuits. A high-frequency structure simulator (HFSS) was first used to simulate the capacitance when injection currents flow into the arteries through the bioimpedance circuits. We also used the simulation to investigate the effects of add-on capacitors. Lastly, we conducted preliminary comparative analyses between wet electrodes and dry electrodes in vivo with added capacitance values ranging from 100 pF to 1 μF, altering capacitance magnitudes by factors of 100. As a result, we obtained a signal-to-noise ratio (SNR) that was 8.2 dB higher than that of dry electrodes. Performance was also shown to be comparable to wet electrodes, with a reduction of only 0.4 dB using 1 μF. The comparative results demonstrate that the addition of capacitors to the electrodes has the potential to allow for performance similar to that of wet electrodes for bioimpedance pulse rate monitoring and could potentially be used for other applications of dry electrodes.

Chirality-Induced Magnet-Free Spin Generation in a Semiconductor.

Electrical generation and transduction of polarized electron spins in semiconductors (SCs) are of central interest in spintronics and quantum information science. While spin generation in SCs is frequently realized via electrical injection from a ferromagnet (FM), there are significant advantages in nonmagnetic pathways of creating spin polarization. One such pathway exploits the interplay of electron spin with chirality in electronic structures or real space. Here, utilizing chirality-induced spin selectivity (CISS), the efficient creation of spin accumulation in n-doped GaAs via electric current injection from a normal metal (Au) electrode through a self-assembled monolayer (SAM) of chiral molecules (α-helix l-polyalanine, AHPA-L), is demonstrated. The resulting spin polarization is detected as a Hanle effect in the n-GaAs, which is found to obey a distinct universal scaling with temperature and bias current consistent with chirality-induced spin accumulation. The experiment constitutes a definitive observation of CISS in a fully nonmagnetic device structure and demonstration of its ability to generate spin accumulation in a conventional SC. The results thus place key constraints on the physical mechanism of CISS and present a new scheme for magnet-free SC spintronics.

A 3 MHz Low-Error Adaptive Howland Current Source for High-Frequency Bioimpedance Applications.

Bioimpedance is a diagnostic sensing method used in medical applications, ranging from body composition assessment to detecting skin cancer. Commonly, discrete-component (and at times integrated) circuit variants of the Howland Current Source (HCS) topology are employed for injection of an AC current. Ideally, its amplitude should remain within 1% of its nominal value across a frequency range, and that nominal value should be programmable. However, the method's applicability and accuracy are hindered due to the current amplitude diminishing at frequencies above 100 kHz, with very few designs accomplishing 1 MHz, and only at a single nominal amplitude. This paper presents the design and implementation of an adaptive current source for bioimpedance applications employing automatic gain control (AGC). The "Adaptive Howland Current Source" (AHCS) was experimentally tested, and the results indicate that the design can achieve less than 1% amplitude error for both 1 mA and 100 µA currents for bandwidths up to 3 MHz. Simulations also indicate that the system can be designed to achieve up to 19% noise reduction relative to the most common HCS design. AHCS addresses the need for high bandwidth AC current sources in bioimpedance spectroscopy, offering automatic output current compensation without constant recalibration. The novel structure of AHCS proves crucial in applications requiring higher β-dispersion frequencies exceeding 1 MHz, where greater penetration depths and better cell status assessment can be achieved, e.g., in the detection of skin or breast cancer.

Ionization processes of negative corona discharge. Part 2. Theory. Comparison with experiment

The purpose of the research is a theoretical analysis of ionization processes in the air, which are initiated by a high-voltage field generated by the negative needle-flat electrode electrode system. Methods. Fe, Cu, Al electrodes are used. Calculations are carried out using the methods of quantum mechanics and mathematical physics. Results. The processes of cold and thermoelectron emission of electrons, enhanced by an external high-voltage field (Schottky emission), are analyzed. The conditions under which the generation of charges from the cathode surface due to plasma-chemical reactions and the capture of surface electrons by electronegative oxygen molecules are decisive are investigated. Based on the PE theory, a theory of injection of negative ions from the cathode into an electronegative gas is constructed and the theory is compared with experiment. It has been shown that at small radii of curvature of needle tips, when E ≥ 106 V/cm, the generation of charges is due to cold emission of electrons. In average fields E ≈ 105 V/cm, electron emission is due to the Schottky effect. In fields E ≈ 104 V/cm and below, injection is caused by electrochemical processes and PE capture. A theory has been developed for PEs that appear at electric field intensities on the electrode of the order of several tens of kV/cm, that is, on flat and slightly curved negative electrodes. The capture of PE by electron-withdrawing molecules causes an injection current and, as a consequence, the ignition of a corona discharge. Analytical expressions for the surface density as a function of the local electric field strength, as well as an expression for the injection current, are obtained. The agreement between theory and experiment is satisfactory. Conclusion. An analysis of the development of CR on negative needles is given. A theory of PE at the cathode in strong electric fields was developed. Based on the results of measuring dark negative current-voltage characteristics, it is possible to determine the patterns of surface processes involving electronic transitions, in particular, determine the concentration of PE and injection currents.

Optimization of the Al Composition of the p‐AlGaN Electron Blocking Layer in GaInN/GaN Multiquantum‐Shell Nanowire LEDs

The aim is to develop highly efficient GaInN/GaN nanowire (NW)‐based light‐emitting diodes (LEDs), which are composed of GaN NWs and multiquantum shell (MQS) active regions. These regions incorporate the polar c‐plane, nonpolar r‐plane, and semipolar m‐plane. A challenge with MQS‐LEDs is that the current path through the c‐plane MQS tends to dominate under low‐current injection conditions. Given that the MQS on the c‐plane is very defective, this injection current is mainly subjected to nonradiative recombination. Therefore, this study explores various optimizations of the p‐AlGaN electron blocking layers (EBLs) to minimize the current injection into the MQS in the c‐plane region. The samples are subsequently grown using a specific process. This involves n‐GaN NWs, GaInN/GaN‐based quantum shells, p‐AlGaN EBLs with different Al compositions, and p‐GaN shells. All these are developed by metal–organic vapor phase epitaxy on an n‐GaN template featuring a SiO2 hole pattern. NW LEDs are fabricated and subsequently their device characteristics are investigated. Under low‐current injection, the sample with a lower Al composition exhibits higher luminescence intensity. However, this trend reverses when the injection current increases. The findings suggest that AI composition and thickness in the p‐AlGaN EBL significantly affect the output power and the emission wavelength.

Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors.

A vertical-type InGaN light-emitting diode with a resonant cavity was demonstrated with a 9 μm aperture size and a short cavity formed by hybrid distributed Bragg reflectors (DBRs). The approach involved designing epitaxial structures and utilizing an electrochemical etching process to convert heavily doped n-type gallium nitride (n+-GaN) layers into porous GaN layers as a porous-GaN DBR structure. Thirteen pairs of the conductive porous-GaN:Si/GaN:Si DBR structure provided a vertical current path in a vertical-type light-emitting diodes (LED) structure. The LED epitaxial layers were separated from sapphire for membrane-type LED structures through a laser lift-off process. During the free-standing membrane fabrication process, the dielectric DBR deposited on ITO/p-GaN:Mg layers was inverted from top to bottom, thereby establishing the concept of higher reflectivity for the bottom DBR compared to the porous-GaN DBR. The physical cavity length was reduced from about 2.3 μm for the LED membrane to 0.74 μm for the membrane-type LED with the embedded porous-GaN DBR structure. The divergent angles and line width of EL emission light were reduced from 124°/31.7 nm to 44°/3.3 nm due to the resonant cavity effect. The membrane-type LED structures with hybrid DBRs consisted of small divergent angles, narrow line width, and vertical current injection properties that have potential for directional emission light sources and vertical-cavity surface-emitting diode laser applications.

Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature

AbstractEfficient p‐ and n‐type in situ doping of compressively strained germanium tin (Ge1‐xSnx) semiconductor epilayers, grown by chemical vapor deposition on a standard Si(001) substrate, is demonstrated. Materials characterization results reveal unusual impact of dopants manifesting via a pronounced reduction of Sn content in the epilayer, accompanied by an enhancement of the growth rate, due to increasing p‐type doping concentration. Furthermore, the opposite behavior for n‐type doping is observed, resulting in a less pronounced increase of Sn concentration and no effect on growth rate. Nevertheless, a very high density of electrically active holes up to ≈4 × 1020 cm−3 is obtained in p‐type doped Ge1‐xSnx epilayer resulting in the lowest resistivity of 0.15 mΩ cm among all in situ doped epitaxial and strained group‐IV semiconductors. Also, the metal‐to‐insulator transition in Ge1‐xSnx is experimentally demonstrated for doping levels above 1 × 1017 cm−3, which is substantially lower than in any group‐IV semiconductor, and theoretically predict it to be as low as ≈1 × 1017 cm−3. The findings enabled by the doping regime explored in this work can open novel prospects to engineer low resistivity contacts and charge current injection in applications covering next‐generation transistors, qubits, diodes, electrically driven light sources, sensors and hybrid quantum devices.

Active on-site calibration technology of current transformer based on non-rated frequency current injection.

This paper proposes an active on-site calibration method through background current cancellation and non-rated current injection. It can measure the error of the current transformer in service from 1% to 120% rated current percentage without power supply interruption. In order to establish the error relationship between rated frequency and arbitrary frequency, a theoretical analysis of current transformer calibration at the arbitrary frequency has been developed by means of the equivalent circuit. It describes a method to determine the phase angle and ratio errors of the measuring transformers at arbitrary frequencies on the basis of the calibrated error values at rated frequency. To prove the theoretical analysis, an experimental validation was carried out. The experimental results demonstrate that this active onsite calibration is a valid tool for the evaluation of current transformer performances. The calibration results showed that, for both cases (non-rated frequency calibration and mixing frequency calibration), the difference between mean ratio error and rated frequency ratio error was lower than 0.01%, and the difference between mean phase error and rated frequency phase error was lower than 1', which meets the requirement of the 0.2 accuracy class calibration.

Leakage Current and Hot-Carrier Injection in the Junctionless Nanowire FETs Enhanced by Tensile Mechanical Stress

Leakage Current and Hot-Carrier Injection in the Junctionless Nanowire FETs Enhanced by Tensile Mechanical Stress

Electrical Interface Parameters of PEDOT:PSS: Effect of Electrodeposition Charge Evaluated Under Body Conditions for Neural Electrode Applications

This study explores the influence of the deposition charge of poly(3,4-ethylenedioxythiophene) doped with polystyrene sulfonate (PEDOT:PSS) on its electrical interface parameters. For this purpose, PEDOT:PSS was fabricated by electrodeposition on commercial platinum electrodes with the time limited by different charges (1, 3, 6, 9 mC). Further, the electrodes were characterized regarding their electrical interface such as interfacial impedance, potential window, double-layer capacitance, charge storage capacity, and current injection limit under simulated body conditions. The work showed whether and to what extent the change of deposition charge affected the electrical interface parameters of PEDOT:PSS-based platinum electrodes. The electrodes polymerized with 9 mC exhibited a significant increase in specific capacitance, indicating enhanced charge storage capacity. Additionally, this sample demonstrated lower resistance in phosphate-buffered saline, suggesting improved conductivity.

Inspection techniques in photovoltaic power plants: A review of electroluminescence and photoluminescence imaging

The growth of photovoltaic power plants in both size and number has spurred the development of new approaches in inspection techniques. The most commonly employed methods include visual inspections, current-voltage measurements, infrared thermography, and luminescence imaging. Luminescence, rooted in the electromagnetic radiation capture of semiconductor structures that make up solar cells, proves effective in detecting various failures that may occur throughout the lifespan of a photovoltaic module. This phenomenon can be induced either by injecting current into the photovoltaic module (Electroluminescence) or through optical excitation using an appropriate light source (Photoluminescence). This paper offers an overview of the conventional outdoor luminescence imaging technique, delving into its applications and limitations. Additionally, it provides a comprehensive review of innovative outdoor luminescence technique approaches. These novel techniques aim to address several limitations of conventional methods, such as the considerably lower luminescence emission intensity compared to solar radiation, the need for external energy sources for current injection, the required acquisition time, and the necessity of disconnecting the solar module.