Current-induced Spin-orbit Torques Research Articles

Enhancement of spin Hall angle in semimetallic materials α -Sn under voltage regulation

Utilizing current-induced spin–orbit torque (SOT) to control magnetization is essential for the advancement of spintronics. SOT offers high energy efficiency and rapid operation speed. The ideal SOT material should have a high charge-to-spin conversion efficiency and excellent electrical conductivity. Recently, there has been a focus on topological insulator materials with topological surface states in SOT research due to their controllability in spin–orbit coupling, conductivity, and energy band topology. While topological Dirac semimetallic materials show promise for SOT applications, research on voltage regulation of their spin Hall angle is still in its early stages. This paper investigates the multilayer structure of a Dirac semimetallic material. In an α-Sn/Ag bilayer, the voltage regulation effect can increase the spin Hall angle by five times by adjusting the strain on the Fermi level. Experiments explore the role of a silver layer as a transport layer in the electric field control of multilayer films. This material system can enhance its effects under electric field regulation and offer insight for achieving regulation in new spintronic devices.

Spin-Orbit Torque in Single-Molecule Junctions from ab Initio.

The use of electric fields applied across magnetic heterojunctions that lack spatial inversion symmetry has been previously proposed as a nonmagnetic means of controlling localized magnetic moments through spin-orbit torques (SOT). The implementation of this concept at the single-molecule level has remained a challenge, however. Here, we present first-principles calculations of SOT in a single-molecule junction under bias and beyond linear response. Employing a self-consistency scheme invoking density functional theory and nonequilibrium Green's function theory including spin-orbit interaction, we compute the change of the magnetization with the bias voltage and the associated current-induced SOT. Within the linear regime our quantitative estimates for the SOT in single-molecule junctions yield values similar to those known for magnetic interfaces. Our findings contribute to an improved microscopic understanding of SOT in single molecules.

Field-Free Spin-Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide.

Current-induced spin-orbit torque (SOT) offers substantial promise for the development of low-power, nonvolatile magnetic memory. Recently, a single-phase material concurrently exhibiting magnetism and the spin Hall effect has emerged as a scientifically and technologically interesting platform for realizing efficient and compact SOT systems. Here, we demonstrate external-magnetic-field-free switching of perpendicular magnetization in a single-phase ferromagnetic and spin Hall oxide SrRuO3. We delicately altered the local lattices of the top and bottom surface layers of SrRuO3, while retaining a quasi-homogeneous, single-crystalline nature of the SrRuO3 bulk. This leads to unbalanced spin Hall effects between the top and bottom layers, enabling net SOT performance within single-layer ferromagnetic SrRuO3. Notably, our SrRuO3 exhibits the highest SOT efficiency and lowest power consumption among all known single-layer systems under field-free conditions. Our method of artificially manipulating the local atomic structures will pave the way for advances in spin-orbitronics and the exploration of new SOT materials.

Perpendicular magnetic properties and field-free current-induced switching in W/CoFeB/MgO trilayers with a compensating oblique W underlayer

Zero-field magnetization switching (ZFS) driven by current-induced spin–orbit torque (SOT) holds significant importance in spintronic applications. The introduction of a lateral asymmetric structure (LAS) through oblique deposition proves to be an effective strategy for breaking inversion symmetry, thereby enabling SOT-driven ZFS. However, the coexistence of wedge thickness structure and slanted columnar microstructure in the obliquely deposited films poses challenges in distinguishing their respective effects. In this study, we conducted a comparative investigation of the perpendicular magnetic properties and current-induced switching in W/Co40Fe40B20/MgO films by oblique sputtering of the W underlayer at a fixed tilting angle and at two opposite tilting angles with its wedge thickness compensated. We have found that the perpendicular magnetic properties of the Co40Fe40B20 layer are significantly altered at large tilting angles, irrespective of whether the W wedge thickness is compensated. Notably, at a tilting angle of 50°, ZFS is realized for both the conventional oblique sample and the compensating oblique sample, with the switching polarity contingent on the final tilting direction of the W layer. We have identified a gradient in perpendicular magnetic anisotropy in these samples, attributed to the laterally varying roughness associated with the slanted columnar microstructure of the W underlayer. This study underscores the dominant role of microscopic LAS in obliquely deposited films in breaking SOT symmetry. Our research sheds light on the impact of the slanted columnar microstructure on the magnetic and magneto-transport properties of films, offering valuable insights for advancing spintronic device research.

Prospects for Antiferromagnetic Spintronic Devices

This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors.

Field-Free Spin-Orbit Torque Magnetization Switching in a Perpendicularly Magnetized Semiconductor (Ga,Mn)As Single Layer.

Current-induced spin-orbit torque (SOT) in a perpendicularly magnetized single layer has a strong potential to switch the magnetization using an extremely low current density, which is generally 2-3 orders of magnitude smaller than that required for conventional metal bilayer systems. However, an in-plane external magnetic field has to be applied to break the symmetry and achieve deterministic switching. To further enhance the high-density integration and accelerate the practical application of highly efficient SOT magnetic random-access memory (SOT-MRAM) devices, field-free SOT magnetization switching in a ferromagnetic single layer is strongly needed. In a spin-orbit ferromagnet (a ferromagnet with strong spin-orbit interaction) with crystal inversion asymmetry and a multi-domain structure, the internal Dzyaloshinskii-Moriya effective fields are considered to induce field-free switching. Here, combined with strong spin-orbit coupling and a tilted anisotropy axis induced by a nonuniform Mn distribution and a possible magnetocrystalline anisotropy resulting from a slight substrate tilting, we successfully achieve magnetization switching in a spin-orbit ferromagnet (Ga,Mn)As single layer by utilizing SOT without applying any external magnetic field. Our findings help to deeply elucidate the SOT switching mechanism and can advance the development of a highly efficient MRAM with better scalability.

Strongly temperature-dependent spin–orbit torque in sputtered WTex

Topological materials have shown promising potential in the spintronics application due to their conspicuous efficiency of charge-to-spin conversion. Our research investigates the temperature-dependent spin–orbit torque (SOT) from sputtered WTex. We reveal a strong temperature dependence of SOT and realize the current-induced SOT switching of WTex with perpendicular magnetic anisotropy structure under a wide range of 12 K to room temperature. Our findings reveal the temperature dependence of sputtered WTex and may pave the way for the spintronics application of semimetals under cryogenic temperature.

Acoustic-driven magnetic skyrmion motion.

Magnetic skyrmions have great potential for developing novel spintronic devices. The electrical manipulation of skyrmions has mainly relied on current-induced spin-orbit torques. Recently, it was suggested that the skyrmions could be more efficiently manipulated by surface acoustic waves (SAWs), an elastic wave that can couple with magnetic moment via the magnetoelastic effect. Here, by designing on-chip piezoelectric transducers that produce propagating SAW pulses, we experimentally demonstrate the directional motion of Néel-type skyrmions in Ta/CoFeB/MgO/Ta multilayers. We find that the shear horizontal wave effectively drives the motion of skyrmions, whereas the elastic wave with longitudinal and shear vertical displacements (Rayleigh wave) cannot produce the motion of skyrmions. A longitudinal motion along the SAW propagation direction and a transverse motion due to topological charge are simultaneously observed and further confirmed by our micromagnetic simulations. This work demonstrates that acoustic waves could be another promising approach for manipulating skyrmions, which could offer new opportunities for ultra-low power skyrmionics.

Coarse-graining collective skyrmion dynamics in confined geometries

Magnetic skyrmions are magnetic quasi-particles with enhanced stability and different manipulation mechanisms using external fields and currents, making them promising candidates for future applications such as neuromorphic computing. Recently, several measurements and simulations have shown that thermally activated skyrmions in confined geometries, as they are necessary for device applications, arrange themselves predominantly based on commensurability effects. In this simulational study, based on the Thiele model, we investigate the enhanced dynamics and degenerate non-equilibrium steady state of a system in which the intrinsic skyrmion–skyrmion and skyrmion–boundary interaction compete with thermal fluctuations as well as current-induced spin–orbit torques. The investigated system is a triangular-shaped confinement geometry hosting four skyrmions, where we inject spin-polarized currents between two corners of the structure. We coarse grain the skyrmion states in the system to analyze the intricacies of arrangements of the skyrmion ensemble. In the context of neuromorphic computing, such methods address the key challenge of optimizing readout positions in confined geometries and form the basis for understanding collective skyrmion dynamics in systems with competing interactions on different scales. The findings are corroborated by experimental measurements.

Magnetic-Proximity-Induced Efficient Charge-to-Spin Conversion in Large-Area PtSe2/Ni80Fe20 Heterostructures.

As a topological Dirac semimetal with controllable spin-orbit coupling and conductivity, PtSe2, a transition-metal dichalcogenide, is a promising material for several applications, from optoelectrics to sensors. However, its potential for spintronics applications has yet to be explored. In this work, we demonstrate that the PtSe2/Ni80Fe20 heterostructure can generate large damping-like current-induced spin-orbit torques (SOT), despite the absence of spin-splitting in bulk PtSe2. The efficiency of charge-to-spin conversion is found to be -0.1 ± 0.02 nm-1 in PtSe2/Ni80Fe20, which is 3 times that of the control sample, Ni80Fe20/Pt. Our band structure calculations show that the SOT due to PtSe2 arises from an unexpectedly large spin splitting in the interfacial region of PtSe2 introduced by the proximity magnetic field of the Ni80Fe20 layer. Our results open up the possibilities of using large-area PtSe2 for energy-efficient nanoscale devices by utilizing proximity-induced SOT.

Anomalous Hall effect in naturally oxidized normal-metal Al/Cu double films

An unexpectedly larger current-induced spin–orbit torque in oxidized Cu (CuO x )/ferromagnet (FM) than heavy-metal/FM has recently attracted intense attention in spintronic studies. Although the two mechanisms, interfacial Rashba Edelstein effect and spin-vorticity coupling, have been put forward based on the two different conductive features of CuO x , i.e. electrical insulator and gradient of electrical mobility, the detailed investigation of transport of CuO x is still lacking. Here we experimentally report the positive and negative anomalous Hall effect (AHE) in naturally oxidized normal-metal Al/Cu double films. We found that the onset temperature of AHE corresponds to magnetic transition temperature of CuO x . Furthermore, by comparing Hall resistance of the crystalline and amorphous Cu/Al double films, we identify that the positive anomalous Hall resistance attributes to magnetic moment of CuO x itself, while the negative anomalous Hall resistance can originate from the spin or orbital currents generated at the CuO x /AlO x interface interact with magnetization of CuO x and its inverse process.

Terahertz magnetic excitations in non-collinear antiferromagnetic Mn3Pt: Atomistic-scale dynamical simulations

Current-induced spin–orbit torque (SOT) enables highly efficient manipulation of magnetic orders. Non-collinear antiferromagnets exhibit ultrafast spin dynamics by SOT with much higher oscillation frequency than ferromagnets, offering potential applications in terahertz spintronic devices. In this study, we used atomistic scale Landau-Lifshitz-Gilbert simulation approach to demonstrate different magnetic excitation modes in W/Mn3Pt heterostructures with varying crystalline direction. When the spin polarization is perpendicular to the Kagome plane of Mn3Pt, all the magnetic Mn atoms oscillate periodically within the Kagome plane around the normal direction. In contrast, when the spin polarization is parallel to the Kagome plane, only two neighboring Mn atoms rotate while another neighboring Mn atom remains immobile. Interestingly, both of these magnetic excitation modes have the same frequencies and occur in the terahertz range. Additionally, the frequency is proportional to current density and inversely proportional to the antiferromagnetic layer thickness. These findings provide a deeper understanding of magnetic excitation properties in non-collinear antiferromagnets, which can inform the design of terahertz spintronic devices.

Quantitative characterization of current-induced self-spin–orbit torques in a perpendicularly magnetized (Ga,Mn)As single thin film

Quantitative characterizations of the current-induced spin–orbit torques (SOTs) are vitally important for both fundamental understanding and practical applications of SOT-based spintronic devices. Here, we study effective SOT magnetic fields in a (Ga,Mn)As single film with perpendicular magnetic anisotropy, where we can achieve highly efficient full-magnetization switching with a small critical switching current density Jc as low as 105 A/cm2. Using second harmonic Hall measurements, we estimate the SOT effective fields; the damping-like SOT effective field HDL and the field-like SOT effective field HFL are 22.1 and 18.1 Oe, respectively, at 4 K when a current of 1.43 × 105 A/cm2 is applied to the device. Based on this result, we estimate the corresponding spin-torque efficiencies ξDL and ξFL to be 1.32 and 1.08, respectively, which are one order of magnitude higher than those in conventional metal systems. The high efficiency can be partly attributed to the simple single-functional-layer structure, which can avoid the loss from spin scattering at the interface between different functional layers as observed in conventional SOT devices. Our findings will lay the foundation for studying SOT physics and devices based on ferromagnetic semiconductors.

Theory for current-induced intrinsic fieldlike spin-orbit torque in topological materials

Theory for current-induced intrinsic fieldlike spin-orbit torque in topological materials

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Current induced spin-orbit torque (SOT) holds great promise for next generation magnetic-memory technology. Field-free SOT switching of perpendicular magnetization requires the breaking of in-plane symmetry, which can be artificially introduced by external magnetic field, exchange coupling or device asymmetry. Recently it has been shown that the exploitation of inherent crystal symmetry offers a simple and potentially efficient route towards field-free switching. However, applying this approach to the benchmark SOT materials such as ferromagnets and heavy metals is challenging. Here, we present a strategy to break the in-plane symmetry of Pt/Co heterostructures by designing the orientation of Burgers vectors of dislocations. We show that the lattice of Pt/Co is tilted by about 1.2° when the Burgers vector has an out-of-plane component. Consequently, a tilted magnetic easy axis is induced and can be tuned from nearly in-plane to out-of-plane, enabling the field-free SOT switching of perpendicular magnetization components at room temperature with a relatively low current density (~1011 A/m2) and excellent stability (> 104 cycles). This strategy is expected to be applicable to engineer a wide range of symmetry-related functionalities for future electronic and magnetic devices.

Robust spin torque switching of noncollinear antiferromagnet Mn3Sn

Electrical switching of topological antiferromagnetic states in Mn3Sn thin films has been a subject of active investigation. However, dependences of switching behaviors on the film thickness, external field, and crystal orientation remain to be fully explored, which motivate the present study. In this work, (112̄0)-orientated Mn3Sn thin films are fabricated on sapphire substrates, in which a large anomalous Hall effect over a wide temperature range (270–400 K) can be identified. The current-induced spin–orbit torques (SOTs) are utilized to electrically manipulate the topological antiferromagnetic states in Mn3Sn/Pt bilayers. The robust SOT switching can be realized in Mn3Sn films with thicknesses up to 100 nm and with in-plane fields up to 1200 mT. Furthermore, SOT switching behaviors that are independent of the choice of crystal orientations are clearly revealed. Our results could be useful for implementing Mn3Sn films for efficient and stable antiferromagnetic spintronics.

Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current.

Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making them attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicularly magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by shaping the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially nonuniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for developing purely current-driven SOT systems.

Electrical Control of Spin Hall Efficiency and Field-Free Magnetization Switching in W/Pt/Co/Pt Heterostructures with Competing Spin Currents.

Reversal of magnetization via current-induced spin-orbit torque (SOT) is one of the core issues in spintronics. However, an in-plane assistant field is usually required for the deterministic switching of a perpendicularly magnetized system. Additionally, the efficiency of SOT is low, which is detrimental to device applications. This study achieved a reversible and non-volatile control of the critical current for magnetization switching and spin Hall efficiency in the TaN/W/Pt/Co/Pt/TaN heterostructures by ionic liquid (IL) gating-induced hydrogen ion adsorption and desorption in the upper Pt layer. Furthermore, the thinning of the Pt and TaN capping layers activated the oxygen ion migration toward the Co layer under IL gating, resulting in an exchange bias field and allowing field-free magnetization switching and Boolean logic operation. The results of this study offer an intriguing opportunity to promote the development of SOT-based spintronic devices from the perspective of iontronics with low energy dissipation.

Symmetry breaking for current-induced magnetization switching

Electromagnetic phenomena, such as magnetization switching, are guided by parity and time-reversal symmetries. Magnetic field and magnetization are time-odd axial vectors. Therefore, the magnetic field can switch magnetization reversibly. In contrast, the electric field is a time-even polar vector that cannot directly switch magnetization. For magnetic recording, an electrical coil-generated local magnetic field is used to switch the magnetic bit. However, in order to integrate the magnetic functionality, e.g., nonvolatile magnetic memory with high speed and low energy consumption, into the chip, it is essential to implement the magnetization switching by an electrical current, where the current induces other axial vectors through spin-transfer torque or spin–orbit torque (SOT). As an energy-efficient tool of magnetization switching, current-induced SOT has been intensively studied for the past decade, which holds great promise in the next generation of magnetic memories and magnetic logic devices [A. Manchon et al., Rev. Mod. Phys. 91, 035004 (2019); X. Han et al., Appl. Phys. Lett. 118, 120502 (2021); C. Song et al., Prog. Mater. Sci. 118, 100761 (2021); Q. Shao et al., IEEE Trans. Magn. 57, 21076639 (2021); J. Ryu et al., Adv. Mater. 32, 1907148 (2020); Y. Cao et al., iScience 23, 101614 (2020)]. In this review, we will first give the basic principle of the symmetry considerations for current-induced magnetization switching. Then, different methods to break the mirror symmetry for deterministic SOT switching will be discussed, together with examples that contain recent progress. In the end, we will give a discussion on the challenges and perspectives of the symmetry designs for SOT, which aim to inspire future fundamental studies and device applications.

Fully relativistic first-principles quantum transport simulation of noncollinear spin transfer and spin Hall current

In this work, we report the fully relativistic (FR) first-principles quantum transport simulation of noncollinear spin transfer and spin Hall current in the device structure. In this method, the noncollinear FR exact muffin-tin orbital method is combined with Keldysh's nonequilibrium Green's function approach and mean-field theory to account for the multiple disorder scattering. We adopt the Bargmann-Wigner polarization operator to define the appropriate FR spin current so that the current-induced spin transfer, in the noncollinear magnetic device or due to the spin Hall effect, can be studied from first principles. As applications, we calculate the spin transfer torque in noncollinear spin valves Co/Cu/FM/Cu (FM = Co, ${\mathrm{Ni}}_{0.8}{\mathrm{Fe}}_{0.2}$) and spin Hall angles in various ${\mathrm{Pt}}_{1\ensuremath{-}x}{Y}_{x}$ [$Y$ = vacancy (Va), Au, Ag, Pd] alloys. We find that our FR results agree well with previous theoretical simulations and experimental measurements. Moreover, it is found that the applied finite bias can significantly enhance the spin Hall angle in ${\mathrm{Pt}}_{1\ensuremath{-}x}{\mathrm{Va}}_{x}$, and PtAg alloy presents a much higher spin Hall angle than that of PtAu and PtPd alloys. Our implementation of the FR method provides an important first-principles tool for studying various nonequilibrium spin phenomena and the associated relativistic effects in realistic device structures with atomic disorders, including both current-induced spin transfer and spin-orbit torques.