Busbars are critical components that connect high-current and high-voltage subcomponents in high-power converters. This paper reviews the latest busbar design methodologies and offers design recommendations for both laminated and PCB-based busbars. Silicon Carbide (SiC) power devices switch at much higher speeds compared to traditional silicon devices, making them more susceptible to parasitic elements within the busbar. In high-frequency SiC converters, using thicker copper offers limited improvement in high-frequency current handling due to the reduced skin depth at such frequencies. PCB busbars, however, provide several advantages, including reduced loop inductance, enhanced high-frequency current capacity, simplified assembly, and lower costs. Additionally, they enable the integration of components such as sensors, capacitors, and resistors, which can further optimize overall system performance. This paper also presents optimized busbar designs for both module-based and discrete device-based SiC high-power converters, comparing various SiC power module packages and offering design insights. Finally, this paper showcases a 75 kW three-phase inverter utilizing a PCB busbar, demonstrating its potential for achieving high power density and cost-effectiveness in discrete SiC device-based high-power converters.
Read full abstract