CuInS2 Thin Films Research Articles

Photoconductivity effects in CuInS2, CuInSe2 and CuInTe2 thin films

Photoconductivity response spectra for CuInS2, CuInSe2 and CuInTe2 thin films are reported. The temperature dependences of the spectra are utilized to determine the bandgap energies as functions of temperature. Photoconductive response times are measured for these I–III–VI2 ternary semiconductors and are discussed in terms of deposition parameters and post-deposition treatments. The photoconductive decay times are in the range 10-3 – 101 ms.

CuInS2 thin films: Preparation and properties

The growth and electrical properties of CuInS2 thin films are described. Two deposition schemes, single- and double-source methods, are reported. Data are presented indicating the effects of film and substrate temperature on the electrical characteristics (mobility, resistivity, and carrier concentration) of the films. Both n- and p-type films are reported, and the effects of sulfur concentrations are discussed. Some postdeposition annealing effects are also detailed.