The research investigated mechanically stimulated changes in resistance ( R/R 0 = f(σ) ) of p -type conductivity single-crystal silicon samples that underwent long-term (~ 600 days) magnetic treatment. The permanent magnetic field induction was В = 0.354 Т . It was established that the action of the magnetic field leads to the appearance of a characteristic maximum on the curves R/R 0 = f(σ) at the initial stage of uniaxial elastic deformation. A similar effect was observed after small doses of X-irradiation ( D = 312 Gy ). It was found that the position and magnitude of the characteristic maximum on the R/R 0 = f(σ) curves significantly depend on the time that has passed since the previous cycle of deformation (compression-decompression). In particular, it is shown that the characteristic maximum is not observed if this time does not exceed 20 hours. It was also found that with an increase in time (which has passed since the previous deformation cycle), the value of the maximum increases, and its position shifts towards higher mechanical stresses σ . At the same time, the amount of residual resistance at the beginning of the next deformation cycle also decreases. So, it can be seen that the relaxation processes, which are accompanied by a change in the value of the residual resistance of the crystal, do not have a clear time periodicity, but there is a clear tendency to its increase in value. The change of the defective background in the crystal under the action of the load and the magnetic field affects the concentration and mobility of the charge carriers, which are related to the electrical conductivity of the semiconductor. A characteristic feature of dislocations in silicon crystals is the presence around them of areas with an increased concentration of point defects (Cottrell clouds). It has been confirmed that the long-term effect of a constant magnetic field on experimental p -Si crystals leads to the disintegration of defects, such as hydrogen-containing and oxygen-containing complexes (Si–O–Si, Si–H 2 , O–Si–O, Si–O–C, Si –CH 3 , H–OH, H 2 O, Si–OH, etc.). As a result of such decay, the formed hydrogen can migrate in the elastic stress fields of the near-surface layer, passivating the acceptor bonds. This, accordingly, leads to a decrease in the surface electrical conductivity of the experimental samples. Key words : silicon, magnetic field, dislocations, uniaxial elastic deformation.