Crystalline Wires Research Articles

Growth of self-integrated atomic quantum wires and junctions of a Mott semiconductor.

Continued advances in quantum technologies rely on producing nanometer-scale wires. Although several state-of-the-art nanolithographic technologies and bottom-up synthesis processes have been used to engineer these wires, critical challenges remain in growing uniform atomic-scale crystalline wires and constructing their network structures. Here, we discover a simple method to fabricate atomic-scale wires with various arrangements, including stripes, X-junctions, Y-junctions, and nanorings. Single-crystalline atomic-scale wires of a Mott insulator, whose bandgap is comparable to those of wide-gap semiconductors, are spontaneously grown on graphite substrates by pulsed-laser deposition. These wires are one unit cell thick and have an exact width of two and four unit cells (1.4 and 2.8 nm) and lengths up to a few micrometers. We show that the nonequilibrium reaction-diffusion processes may play an essential role in atomic pattern formation. Our findings offer a previously unknown perspective on the nonequilibrium self-organization phenomena on an atomic scale, paving a unique way for the quantum architecture of nano-network.

Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires.

While traditional ferroelectrics are based on polar crystals in bulk or thin film form, two-dimensional and layered materials can support mechanisms for symmetry breaking between centrosymmetric building blocks, e.g., by creating low-symmetry interfaces in van der Waals stacks. Here, we introduce an approach toward symmetry breaking in van der Waals crystals that relies on the spontaneous incorporation of stacking faults in a nonpolar bulk layer sequence. The concept is realized in nanowires consisting of Se-rich group IV monochalcogenide (GeSe1-xSx) alloys, obtained by vapor-liquid-solid growth. The single crystalline wires adopt a layered structure in which the nonpolar A-B bulk stacking along the nanowire axis is interrupted by single-layer stacking faults with local A-A' stacking. Density functional theory explains this behavior by a reduced stacking fault formation energy in GeSe (or Se-rich GeSe1-xSx alloys). Computations demonstrate that, similar to monochalcogenide monolayers, the inserted A-layers should show a spontaneous electric polarization with a switching barrier consistent with a Curie temperature above room temperature. Second-harmonic generation signals are consistent with a variable density of stacking faults along the wires. Our results point to possible routes for designing ferroelectrics via the layer stacking in van der Waals crystals.

(Digital Presentation) Resistive Switching and Brain-Inspired Computing in Perovskite Nanowires and Quantum Wires

In the past decade, halide perovskites (HPs) have shot to fame in the genre of optoelectronics and photovoltaics owing to their large absorption co-effcient, high color purity, tunable bandgap and long charge diffusion lengths. Besides these traits, HPs also possess innumerable charge transport pathways, inherent hysteresis, high charge-carrier and ionic mobilities which render them as ideal candidates for resistive random access switching memories (RRAMs). However owing to material and electrical instability associated with HP thin-film devices, the figures-of-merits (FOMs) namely retention, endurance and switching speed were not up to the state of-the-art standard until recently. In order to revolutionize HP Re-RAMs we devised a unique device structure where we replaced the thin-film architecture with vertically aligned high density HP nanowires and quantum wires embedded in a porous alumina membrane (PAM) sandwiched between metallic silver and aluminum contacts. The excellent passivation provided by the PAM imparted the requisite electrical and material stability to the environmentally delicate HPs by drastically reducing the surface diffusion pathways and thereby thwarting the moisture induced attacks. Extrapolated retention time as high as 28.3 years and measured device endurance of a million cycles were obtained. Utilizing the single crystalline HP nanowires and quantum wires and their associated high ionic and electronic mobilities, switching speed as fast as 100 ps was also obtained. These FOMs represent record values for HP RRAMs ever reported. Furthermore a 14 nm lateral size HP quantum wire RRAM cell was fabricated and a cross-bar device architecture with a unique sneaky path mitigation scheme were developed, which successfully exhibited the scalability potential of our devices. We further coupled the optoelectronic and switching behaviors and were able to obtain optical programmability among the low resistance states. Besides data storage, the HP nanowires and quantum wires were employed in developing neuromorphic devices enabled with low power and high precision computing capabilities. Specifically, we obtained robust multi-level states in two types of brain-inspired devices capable of performing analog processing tasks by using silver as the top electrode and precisely controlling the current injection in the monocrytalline switching medium and by using indium doped tin oxide as the top electrode and inducing a novel valence change mechanism in the HP nanowires triggering the gradual conductance change. All in all, our nanowire and quantum wire devices propel HP RRAMs to the state-of-the-art standard in multifarious applications concerning future data storage and neuromorphic computing.

Fragmentation of faceted crystalline wires

The reduction of surface energy is a well-known driving force for the fragmentation of nanowires. Fragmentation can limit the service life of those small low-dimensional building blocks or can be controlled to induce beneficial shape changes. For isotropic surface energy, fragmentation is analogous to the classic Rayleigh-Plateau instability of liquid jets. However, commonly synthesized crystalline nanowires have strongly anisotropic surface energies and exhibit facets coinciding with cusps in the Wulff plot. Depending on growth orientation, different fragmentation behaviors have been seen in nanowires. Using phase-field simulations, we show that fragmentation of faceted nanowires with cubic crystal symmetry may occur by a finite-amplitude nonlinear instability, as opposed to a Rayleigh-Plateau-like linear instability, depending on nanowire growth orientation. We carry out a weakly nonlinear analysis based on sharp interface theory to characterize the faceted nanowire shape corresponding to a surface-energy saddle point. The analysis predicts that the minimum amplitude of a periodic shape perturbation to trigger fragmentation increases with cusp strength but decreases inversely proportionally to the perturbation wavelength for long wavelengths, in good quantitative agreement with phase-field predictions. The results provide the theoretical foundation to predict nanowire stability as a function of length and surface energy in diverse applications.

Tailoring Wavelength- and Emitter-Orientation-Dependent Propagation of Single Photons in Silicon Nanowires

Designing the propagation of single quanta at subwavelength scale is of major interest for integrated optical quantum information transfer. This study demonstrates the high potential of crystalline silicon wires with nanometric sections as low-loss nanochannels for quantum nanophotonics. Single photons from N-$V$ centers in nanodiamonds can be guided and spectrally filtered over several micrometers while conserving their quantum statistics. Moreover, these nanowaveguides can be designed so that only light from emitters of specific orientations is efficiently guided, enabling quantum state selectivity and modal control of single-photon transfer in subwavelength waveguides.

High-Frequency Magnetoimpedance (MI) and Stress-MI in Amorphous Microwires with Different Anisotropies.

Magnetoimpedance (MI) in Co-based microwires with an amorphous and partially crystalline state was investigated at elevated frequencies (up to several GHz), with particular attention paid to the influence of tensile stress on the MI behavior, which is called stress-MI. Two mechanisms of MI sensitivity related to the DC magnetization re-orientation and AC permeability dispersion were discussed. Remarkable sensitivity of impedance changes with respect to applied tensile stress at GHz frequencies was obtained in partially crystalline wires subjected to current annealing. Increasing the annealing current enhanced the axial easy anisotropy of a magnetoelastic origin, which made it possible to increase the frequency of large stress-MI: for 90mA-annealed wire, the impedance at 2 GHz increased by about 300% when a stress of 450 MPa was applied. Potential applications included sensing elements in stretchable substrates for flexible electronics, wireless sensors, and tunable smart materials. For reliable microwave measurements, an improved SOLT (short-open-load-thru) calibration technique was developed that required specially designed strip cells as wire holders. The method made it possible to precisely measure the impedance characteristics of individual wires, which can be further employed to characterize the microwave scattering at wire inclusions used as composites fillers.

Field Assisted Reactive Gas Etching of Multiple Tips Observed using FIM

A simple and cost effective method to fabricate multiple tungsten (W) single atom tips (SATs) from both poly and single crystalline wires is reported. Two or four tips attached to a holder are electrochemically etched together in NaOH solution followed by a controlled field assisted reactive gas etching in vacuum using nitrogen as an etching gas and helium as an imaging gas. A Common high voltage is applied simultaneously to all nanotips to shape the apexes towards single atoms. Single atom tips were achieved for both W(111) and W(110) while trimer tips were also achieved for W(111). This observation can lead to an important step towards realizing simplified etching processes of multiple tips which in turn can help to simultaneously fabricate numerous tips leading to mass fabrication and characterization.

Unraveling the electron transfer rates of highly crystalline carbon nanowires with surface oxides.

In the development of glassy carbon fiber toward graphene fiber, highly crystalline carbon wires have attracted attention. More importantly, a charge cannot be accommodated at the surface of highly oriented pyrolytic graphite as it would be in a metal. In this work, we demonstrate that enhancing the decyanation reaction rate and reducing the nanowire diameter to below the crystallite size (≲50 nm) greatly contribute to the microstructure transformation of carbon from low crystalline glassy carbon to crystalline micro-structure. Using silica surfaces to limit the shrinkage of electrospun nanofibers during oxidation and carbonization, enhances the conversion of alcohol groups to normal carbonyl groups on the surface of the carbon wires derived from PAN fibers deposited with near field electrospinning (NFES). Cyclic voltammograms (CVs) on the carbon nanowires reveal that the enhancement of alcohol groups to normal carbonyl groups slows down the rapid electron transfer on glassy carbon electrodes. Using electrochemical impedance spectroscopy (EIS), we also establish that the electron transfer on the surface of highly crystalline carbon nanowires almost completely depends on the presence of oxygen groups. The highly crystalline structure of nanoscale carbon wires with a large amount of normal carbonyl groups exhibits an ultra-low electron transfer rate (less than 1.2 μm s-1), showing the ability to make the charges reside on the highly crystalline carbon nanowires. The straight line in CV allows for EIS measurements at high alternating current voltages, improving upon the non-linearity of traditional electrochemical cells by overcoming the stochastic errors and the lower signal-to-noise ratio for ultra-sensitive biomolecule detection (≤25 mV). The latter could spur the development of a new generation of electrochemical cells and biomedical signal measurements.

Atmospheric vapor-transport method for growth of VO2 single-crystalline nano- and microwires

The growth of high-quality single crystalline nano- and microwires of VO2 is necessary to study the Mott transition and to expand its applications. Here, we propose a modified vapor-transport method characterized by a one-step process that does not require a vacuum and can be performed at the atmospheric pressure conditions with a nitrogen gas flow. This, so called atmospheric vapor-transport (AVT) method, is simpler in terms of the growth procedure and the apparatus installation when compared to the widely used vacuum-based techniques. The crystalline wires obtained by AVT method show a sharp and large, up to five orders, change in the electrical resistance near TC ≈ 340 K, along with the M1–M2–R structural phase transition.

New Schottky-Type Wire-Based Solar Cell with NiSix Nanowire Contacts.

Solar cells built with arrays of semiconductor wires have been studied for several years. They present some potential advantages over their bulk counterparts, such as (much) less use of semiconductor material, as well as improved light absorption properties. Most wire-based solar cells are fabricated with arrays of semiconductor p-n junctions, either radial or axial. Here, using a newly developed random connection process based on nickel silicide nanowires, we have built Schottky-type solar cells on interdigitated base and emitter coplanar electrodes that reach an efficiency of 6.5% when only 64% of the footprint area of the device is covered with p-type Si wire light-absorbers. To the best of our knowledge, this is the best efficiency reported so far for a Schottky-type wire-based solar cell; a simple extrapolation of the surface area suggests that an efficiency of more than 10% can be reached, which is comparable to that of single-junction hydrogenated amorphous Si cells. We also compare the Schottky-type cell with a "control" p-i-n one using the same device layout and the same nickel silicide nanowire random connection process: the efficiency of the p-i-n cell is higher (∼8%) but this is due to a higher VOC, the short-circuit current density (ISC) being very similar in both cases, close to 20 mA/cm2. The maximum temperature reached throughout the fabrication process of the cells (whether Schottky-type or p-i-n) is 550 °C, corresponding to the growth of the crystalline Si wires. Altogether, the results presented here hold promises toward cheap photovoltaics based on the use of randomly organized and randomly connected Si wire arrays.

Shape-Anisotropy-Induced Ordered Packings in Cylindrical Confinement.

Densest possible packings of identical spheroids in cylindrical confinement have been obtained through MonteCarlo simulations. By varying the shape anisotropy of spheroids and also the cylinder-to-spheroid size ratio, a variety of densest possible crystalline structures have been discovered, including achiral structures with specific orientations of particles and chiral helical structures with rotating orientations of particles. Our findings reveal a transition between confinement-induced chiral ordering and shape-anisotropy-induced orientational ordering and would serve as a guide for the fabrication of crystalline wires using anisotropic particles.

Electrochemiluminescence Waveguide in Single Crystalline Molecular Wires

AbstractHere we report the first observation of active waveguide of electrochemiluminescence (ECL) in single crystalline molecular wires self‐assembled from cyclometalated iridium(III) complexes, namely tris(1‐phenylisoquinoline‐C2, N) (Ir(piq)3). Under dark conditions, the molecular wires deposited on the electrode surface can act as both ECL emitters and active waveguides. As revealed by ECL microscopy, they exhibit the typical characteristics of optical waveguides, transmitting ECL and generating much brighter ECL emission at their terminals. Moreover, self‐generated ECL can be confined inside the molecular wire and propagates along the longitudinal direction as far as ≈100 μm to the terminal out of touch with the electrode. Therefore, this one‐dimensional crystalline molecular wire‐based waveguide offers the opportunity to switch the electrochemically generated ECL to remote light emission in non‐conductive regions and is promising for contactless electrochemical analysis and study of (bio)chemical systems.

Electrochemiluminescence Waveguide in Single Crystalline Molecular Wires.

Here we report the first observation of active waveguide of electrochemiluminescence (ECL) in single crystalline molecular wires self-assembled from cyclometalated iridium(III) complexes, namely tris(1-phenylisoquinoline-C2 , N) (Ir(piq)3 ). Under dark conditions, the molecular wires deposited on the electrode surface can act as both ECL emitters and active waveguides. As revealed by ECL microscopy, they exhibit the typical characteristics of optical waveguides, transmitting ECL and generating much brighter ECL emission at their terminals. Moreover, self-generated ECL can be confined inside the molecular wire and propagates along the longitudinal direction as far as ≈100 μm to the terminal out of touch with the electrode. Therefore, this one-dimensional crystalline molecular wire-based waveguide offers the opportunity to switch the electrochemically generated ECL to remote light emission in non-conductive regions and is promising for contactless electrochemical analysis and study of (bio)chemical systems.

Thickness-Dependence Electrical Characterization of the One-Dimensional van der Waals TaSe3 Crystal.

Needle-like single crystalline wires of TaSe3 were massively synthesized using the chemical vapor transport method. Since the wedged-shaped single TaSe3 molecular chains were stacked along the b-axis by weak van der Waals interactions, a few layers of TaSe3 flakes could be easily isolated using a typical mechanical exfoliation method. The exfoliated TaSe3 flakes had an anisotropic planar structure, and the number of layers could be controlled by a repeated peeling process until a monolayer of TaSe3 nanoribbon was obtained. Through atomic force and scanning Kelvin probe microscope analyses, it was found that the variation in the work function with the thickness of the TaSe3 flakes was due to the interlayer screening effect. We believe that our results will not only help to add a novel quasi-1D block for nanoelectronics devices based on 2D van der Waals heterostructures, but also provide crucial information for designing proper contacts in device architecture.

Деформация и разрушение аморфных и кристаллических проводов медицинского назначения при кручении

Деформация и разрушение аморфных и кристаллических проводов медицинского назначения при кручении

Enhanced magnetocrystalline anisotropy in an ultra-dense array of air-exposed crystalline cobalt nanowires

The magnetic anisotropy of an ultradense array of crystalline cobalt nanowires is investigated by means of broadband ferromagnetic resonance and magnetic torque measurements. The array is grown epitaxially in solution on a Pt(111) film and consists of single crystalline metallic wires with a diameter of 6.2 nm and a center-to-center interwire distance of 9.6 nm. The shape anisotropy and the Co hexagonal compact structure with the c-axis along the wire axis combine with each other to impose a perpendicular magnetic anisotropy despite the high density of 8 × 1012 wires/in.2. The intrinsic uniaxial magnetocrystalline anisotropy constants K1 and K2 are extracted from the ferromagnetic resonance and torque measurements using a mean field approach accounting for the interwire dipolar interactions. At room temperature, and despite air exposure, an unexpected increase of K1 and K2 of more than 40% with respect to the bulk is evidenced.

Liquid crystalline polymeric wires for selective proton transport, part 2: Ion transport in solid-state

A study of ion transport in a new generation of hybrid biomimetic membranes, which are based on the formation of polymeric ionic wires via exo-recognition and subsequent orientation by thermal treatment, is presented. The specific conductivity of the hybrid membranes, obtained by electrochemical impedance spectroscopy, is not strongly affected by relative humidity and temperature; the values are found around 10−5 S/cm for all studied materials. However, in the case of ion transport observed by linear sweep voltammetry, the hybrid materials containing homeotropically oriented columns exhibited lower resistance than unoriented samples. The preferential selectivity, expressed as conductance ratio compared to proton cation, show remarkably better results for biomimetic membranes when compared to Nafion® 117. Low values of methanol crossover are also found. Taking into account these findings, these materials hold great promise for practical application requiring selective ion transport.

Challenges During Microstructural Analysis and Mechanical Testing of Small-Scale Pseudoelastic NiTi Structures

Most investigations on NiTi-based shape memory alloys involve large-scale bulk material; knowledge about the martensitic transformation in small-scale NiTi structures is still limited. In this paper, we study the microstructures of thin NiTi layers and their mechanical properties, and we discuss typical challenges that arise when experiments are performed on small samples. A physical vapor deposition (PVD) process was used to deposit thin NiTi wires with a cross section of 15 × 15 μm2 and dogbone-shaped samples 5 × 500 μm2. Microstructural properties were characterized by X-ray diffraction, electron backscatter diffraction, and scanning electron microscopy. Moreover, tensile tests were performed using optical strain measurements in order to observe martensite band formation during cyclic loading. The surfaces of the crystalline wires reflect the columnar growth of NiTi during deposition. The wires exhibit pseudoelastic material behavior during tensile testing. Fracture typically occurs along the columns because the column growth direction is perpendicular to the straining direction. Electropolishing removes these local stress raisers and hence increases fracture strains. Our results demonstrate that the pseudoelastic properties of the PVD-processed materials agree well with those of conventional NiTi, and that they provide new opportunities to study the fundamentals of martensitic transformation in small-scale model systems.

Evolution of the nanostructure of CdS using solvothermal synthesis at different temperature and its influence on the photoactivity for hydrogen production

Evolution of the nanostructure of CdS was studied on samples prepared by solvothermal synthesis from low (90 °C) to high temperature (190 °C). Physicochemical characterization of CdS samples have shown the evolution with solvothermal temperature of the CdS nanostructures from lamellar structures composed of many random arranged crystal lattices with short-range crystalline sizes formed at low temperature to the formation of highly crystalline rods and wires with higher diameter and length as the solvothermal temperature rises. Photocatalytic activity for H2 production has shown that the combination of CdS nanorods having low diameter with small CdS nanocrystals with strong confinement effect (CdS-SQE) produced at medium temperature strongly enhances the photoactivity compared to that obtained on crystalline CdS in form of rods or wires produced at higher solvothermal temperature.

Template-Free Fabrication of Highly-Oriented Single-Crystalline 1D-Rutile TiO2-MWCNT Composite for Enhanced Photoelectrochemical Activity

Template-free synthesis of phase pure one-dimensional (1D), single crystalline rutile titania nanorods or wires at low temperature still remains a challenging task due to its complex nature of surface chemistry. In these 1D structures, charge transport is highly favored. To further modify the electrical conductivity and optoelectronic properties of these 1D nanostructures, various methods such as doping of TiO2 with metal and nonmetal and synthesis of branched and hybrid structures are developed. If these hybrid structures can directly synthesize on the substrate, the transport of the electron will improve due to reduced grain boundary and exciton recombination. In this contribution, for the first time, we have simultaneously synthesized 1D-rutile TiO2-multiwalled carbon nanotube (MWCNT) composite film directly grown on fluorine dope conducting oxide (FTO) substrate along with 1D-rutile TiO2-MWCNT composite powder. The as-grown nanorods films were single-crystalline and oriented vertically with respect to the substrate, having an average height of ∼2 μm. The well connected network of TiO2 with MWCNTs was observed through electron microscopy. The composite film shows positive movement of the flat-band edge and increase in charge carrier density. The TiO2- MWCNT composite was successfully used as photoanode in a dye sensitized solar cell (DSSC) and exhibits a 60% increase in energy-conversion efficiency compared with only TiO2 nanorods.