Abstract
Needle-like single crystalline wires of TaSe3 were massively synthesized using the chemical vapor transport method. Since the wedged-shaped single TaSe3 molecular chains were stacked along the b-axis by weak van der Waals interactions, a few layers of TaSe3 flakes could be easily isolated using a typical mechanical exfoliation method. The exfoliated TaSe3 flakes had an anisotropic planar structure, and the number of layers could be controlled by a repeated peeling process until a monolayer of TaSe3 nanoribbon was obtained. Through atomic force and scanning Kelvin probe microscope analyses, it was found that the variation in the work function with the thickness of the TaSe3 flakes was due to the interlayer screening effect. We believe that our results will not only help to add a novel quasi-1D block for nanoelectronics devices based on 2D van der Waals heterostructures, but also provide crucial information for designing proper contacts in device architecture.
Highlights
The demand for novel device architecture and materials has been increasing tremendously due to the physical limitations of the current Si-based semiconductor technology, which arise as the size of a single transistor decreases to nanometer size [1,2,3,4]
By using the 2D van der Waals heterostructure, in which the stacking sequence and angle can be controlled at the atomic level, semiconductor devices with a thickness of a few nanometers can be manufactured [4,12,13]
The reaction zone was slowly heated to 670 ◦ C, and maintained at constant temperature for 10 days to allow for the compound synthesis
Summary
The demand for novel device architecture and materials has been increasing tremendously due to the physical limitations of the current Si-based semiconductor technology, which arise as the size of a single transistor decreases to nanometer size [1,2,3,4]. Even though the issues arising from high-density integration in electronic manufacturing have been partly solved using a three-dimensional (3D) gate structure, more fundamental solutions should be proposed to meet the requirements for the new era of artificial intelligence technology, for which quicker data processing with a small amount of energy is required [5,6,7,8,9]. Two-dimensional (2D) layered materials with a single atomic thickness have been regarded since the past decade as strong candidates for overcoming the Si-based technology, thanks to their superior mechanical, physical, and chemical properties compared to conventional 3D bulk materials [2,4,10,11,12,13]. The method of selectively etching a specific layer in vdWs heterostructure is still challenging, and it can lead to a drastic degradation of the electrical characteristics because of Materials 2019, 12, 2462; doi:10.3390/ma12152462 www.mdpi.com/journal/materials
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