It was experimentally found that surface recombination due to charge accumulation, called polarization-type potential-induced degradation (PID), occurs by applying high voltage in n-type crystalline Si photovoltaic (PV) modules. By contrast, polarization-type PID has not been observed yet in p-type crystalline Si PV modules. We investigated the effect of differences in anti-reflection coating (ARC) and the conduction type of the substrate used as a base for PV cells on PID. PID was examined for PV modules using p-type and n-type crystalline Si PV cells with a SiNx or SiNx/SiO2 stacked ARC layer. The results indicate that PID owing to charge accumulation occurs even for p-type crystalline Si PV modules by applying high positive voltage. Furthermore, we found that polarization-type PID due to charge accumulation in ARC, leading to surface recombination, is due not to the conduction type of the substrate but to the ARC structure.