The growth of single crystalline oxides on silicon substrates still remains to be a significant technological subject, since the fruitful achievements can be expected for various silicon device technologies. We have ever examined the possibility of BaZrO 3 crystallization at low temperature and at low oxygen partial pressure, by a pulsed laser beam deposition technique. We confirmed that the BaZrO 3 films on SrTiO 3 (0 0 1) substrate could be epitaxially grown at the temperature as low as 500°C, and that the excellent crystallinity of BaZrO 3 can be obtained in the film grown at the low oxygen partial pressure, such as 2.0×10 −8 Torr. However of this, the epitaxially grown of BaZrO 3 thin films on Si (0 0 1) have not been obtained even at such a low oxygen partial pressure during deposition. This is considered to be due to the formation of the interfacial layer, which is amorphous SiO 2 or crystallized SiC depending upon the substrate temperature.