Cryogenic Amplifier Research Articles

Cryogenic W-band Electron Spin Resonance Probehead with an Integral Cryogenic Low Noise Amplifier

The quest to enhance the sensitivity of electron spin resonance (ESR) is an ongoing challenge. One potential strategy involves increasing the frequency, for instance, moving from Q-band (approximately 35 GHz) to W-band (approximately 94 GHz). However, this shift typically results in higher transmission and switching losses, as well as increased noise in signal amplifiers. In this work, we address these shortcomings by employing a W-band probehead integrated with a cryogenic low-noise amplifier (LNA) and a microresonator. This configuration allows us to position the LNA close to the resonator, thereby amplifying the acquired ESR signal with minimal losses. Furthermore, when operated at cryogenic temperatures, the LNA exhibits unparalleled noise levels that are significantly lower than those of conventional room temperature LNAs. We detail the novel probehead design and provide some experimental results at room temperature as well as cryogenic temperatures for representative paramagnetic samples. We find, for example, that spin sensitivity of ~ 3 × 105 spins/√Hz is achieved for a sample of phosphorus doped 28Si, even for sub-optimal sample geometry with potential improvement to < 103 spins/√Hz in more optimal scenarios.

Fusion Design of Cryogenic Filtering Low-Noise Amplifier With High Out-of-Band Rejection Assisted by Grey Wolf Optimizer

Fusion Design of Cryogenic Filtering Low-Noise Amplifier With High Out-of-Band Rejection Assisted by Grey Wolf Optimizer

A 16-GHz Bandwidth Cryogenic IF Amplifier With 4-K Noise Temperature for Sub-mm Radio-Astronomy Receivers

A 16-GHz Bandwidth Cryogenic IF Amplifier With 4-K Noise Temperature for Sub-mm Radio-Astronomy Receivers

Calibration of the cryogenic measurement system of a resonant haloscope cavity* *Measurements were performed at Hunan Normal University in Changsha. This work was supported in part by the Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20190049), the International Partnership Program of Chinese Academy of Sciences for Grand Challenges (112311KYSB20210012), the National Natural Science Foundation of China (12074117,

Possible light bosonic dark matter interactions with the Standard Model photon have been searched using microwave resonant cavities. In this paper, we describe the cryogenic readout system calibration of a 7.138 GHz copper cavity with a loaded quality factor whose operation at a temperature of 22 mK is based on a dilution refrigerator. Our readout system consists of High Electron Mobility Transistors working as cryogenic amplifiers at 4 K, plus room-temperature amplifiers and a spectrum analyzer for signal power detection. We tested the system with a superconducting two-level system based on a single-photon source in the microwave frequency regime. We obtained an overall 95.6 dB system gain and –71.4 dB attenuation in the cavity's input channel. The effective noise temperature of the measurement system is 7.5 K.

Low-noise cryogenic microwave amplifier characterization with a calibrated noise source.

Parametric amplifiers have become a workhorse in superconducting quantum computing; however, research and development of these devices has been hampered by inconsistent and, sometimes, misleading noise performance characterization methodologies. The concepts behind noise characterization are deceptively simple, and there are many places where one can make mistakes, either in measurement or in interpretation and analysis. In this article, we cover the basics of noise performance characterization and the special problems it presents in parametric amplifiers with limited power handling capability. We illustrate the issues with three specific examples: a high-electron mobility transistor amplifier, a Josephson traveling-wave parametric amplifier, and a Josephson parametric amplifier. We emphasize the use of a 50-Ω shot noise tunnel junction (SNTJ) as a broadband noise source, demonstrating its utility for cryogenic amplifier amplifications. These practical examples highlight the role of loss as well as the additional parametric amplifier "idler" input mode.

Cryogenic Resonant Amplifier for Electron-on-Helium Image Charge Readout

AbstractAn electron-on-helium qubit is a promising physical platform for quantum information technologies. Among all the “blueprints” for the qubit realization, a hybrid Rydberg-spin qubit seems to be a promising one toward quantum computing using electron spins. The main technological challenge on the way to such qubits is a detection of fA range image current induced by a Rydberg transition of a single electron. To address this problem, we aim to use a tank LC-circuit in conjunction with a high-impedance and low power dissipation cryogenic amplifier. Here, we report our progress toward realization of a resonant image current detector with a homemade cryogenic amplifier based on FHX13LG HEMT. We present a detailed characterization of the transistor at room and cryogenic temperatures, as well as details of the amplifier design and performance. At the power dissipation level of amplifier well below 100 μW, the measured voltage and current noise level are $$0.6~{\hbox {nV}}/\sqrt{\textrm{Hz}}$$ 0.6 nV / Hz and below 1.5 fA/$$\sqrt{\textrm{Hz}}$$ Hz , respectively. Based on the actual image current measurements of the Rydberg transition in a many-electron system on liquid helium, we estimate an SNR = 8 with a measurement bandwidth 1 Hz for the detection of a single-electron transition, providing the noise level at the output is solely determined by the noise of the amplifier.

Q-band EPR cryoprobe

Following the success of cryogenic EPR signal preamplification at X-band, we present a Q-band EPR cryoprobe compatible with a standard EPR resonator. The probehead is equipped with a cryogenic ultra low-noise microwave amplifier and its protection circuit that are placed close to the sample in the same cryostat. Our cryoprobe maintains the same sample access and tuning which is typical in Q-band EPR, as well as supports high-power pulsed experiments on typical samples. The performance of our setup is benchmarked against that of existing commercial and home-built Q-band spectrometers, using CW EPR and pulsed EPR/ENDOR experiments to reveal a significant sensitivity improvement which reduces the measurement time by a factor of about 40× at 6 K temperature at reduced power levels.

Cryogenic transimpedance amplifier based on a commercial operational amplifier

Cryogenic transimpedance amplifier based on a commercial operational amplifier

High energy, high pulse rate laser operation using crystalline adhesive-free bonded Yb:YAG slabs.

We report on the successful amplification of 10 ns pulses to 10 J energy at 10 Hz in a DiPOLE laser amplifier using crystalline Yb:YAG/Cr:YAG composite slabs manufactured using adhesive-free bonding (AFB) technology. We demonstrate that bonded slabs are suitable for operation in high energy cryogenic laser amplifiers. We also report on frequency doubling of the beam amplified in the bonded slabs. When the pulse energy of the output infrared beam is set to 5 J, a pulse energy of 3.9 J is achieved in the green (corresponding to 78% conversion efficiency). Results demonstrate that AFB technology is suitable for producing large-sized gain material slabs and can overcome current limitations in the manufacture of large-aperture gain material pieces. We believe this work will facilitate energy scaling of high energy lasers where aperture scaling of optical elements is not achievable via conventional manufacturing techniques.

Design and Analysis of a 4.2 mW 4 K 6–8 GHz CMOS LNA for Superconducting Qubit Readout

This article proposes a cryogenic inverter-based low noise amplifier (LNA) for qubit readout. Its input impedance matching is realized by a high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$</tex-math> </inline-formula> on-chip gate inductor and capacitive load through the gate-to-drain feedback capacitance of the input transistors. Cascode transistors are used to optimize the impedance matching, which results in a larger gate inductor and smaller load capacitor and hence a higher passive and inverter gain. Owing to the high passive gain and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$Q$</tex-math> </inline-formula> -factor of the gate inductor at 4 K, the noise of the active stages is substantially suppressed with a negligible noise contribution of the gate inductor. Moreover, with the current re-use in the inverter topology, less power consumption is achieved for the given transconductance of transistors. The input impedance, gain, and noise analyses of the proposed LNA are performed for room temperature (RT) operation, and its noise optimization is done by taking the cryogenic operation of the devices into account. We demonstrate with the circuit analysis and measurement results that the input impedance of the LNA has a low sensitivity to variations on device parameters at cryogenic temperatures. The LNA is implemented in a 28 nm CMOS technology. It achieves 0.4–0.7 dB noise figure (NF) with 4.2 mW power consumption at 4 K, and its operating frequency is between 6–8 GHz. The LNA consumes very low power compared to the state-of-the-art cryogenic CMOS LNAs while providing similar NF performance at 4 K, which makes it suitable for dilution refrigerators.

High mobility Ge 2DHG based MODFETs for low-temperature applications

Modulation-doped field-effect transistors (MODFET) that are typically based on either a two-dimensional electron gas or a two-dimensional hole gas (2DHG) are highly suitable for low-temperature applications due to the high mobilities attained by the charge carriers in the device channel. The Ge 2DHG is particularly interesting, since Ge exhibits the highest hole mobility among all semiconductors. In this paper, we report on the temperature-dependent direct current-characteristics of normally-on MODFETs based on a high mobility Ge 2DHG. Here, we specifically investigate device characteristics down to cryogenic temperatures and analyze the impact of different MOD-doping on device performance. We find that the largest On-Off ratio of and lowest sub-threshold swing (SS) of at a temperature of are attained for a MOD-doping of , while the highest effective mobility is obtained from a device with a MOD-doping of . Furthermore, while effective mobilities in the devices are strongly reduced compared to Hall mobilities measured in the unstructured Ge 2DHGs, both quantities can be seen to follow a similar trend. Our results motivate further investigations of Ge 2DHG MODFETs for applications in cryogenic low-noise amplifiers, besides their well-established potential for spintronic applications.

Resonant electric probe to axionic dark matter

The oscillating light axion field is known as wave dark matter. We propose an LC (inductor-capacitor)-resonance enhanced detection of the narrow band electric signals induced by the axion dark matter using a solenoid magnet facility. We provide full 3D electromagnetic simulation results for the signal electric field. The electric signal is enhanced by the high $Q$-factor of a resonant LC circuit and then amplified and detected by the state-of-the-art cryogenic electrical transport measurement technique. The cryogenic amplifier noise is the dominant noise source in the proposed detection system. We estimate that the detection system can have a promising sensitivity to axion dark matter with mass below ${10}^{\ensuremath{-}6}\text{ }\text{ }\mathrm{eV}$. The projected sensitivities improve with the size of the magnetic field, and the electric signal measurement can be potentially sensitive to the quantum chromodynamics (QCD) axion with ${g}_{a\ensuremath{\gamma}}\ensuremath{\sim}{10}^{\ensuremath{-}16}\text{ }\text{ }{\mathrm{GeV}}^{\ensuremath{-}1}$ around ${m}_{a}\ensuremath{\sim}{10}^{\ensuremath{-}8}\text{ }\text{ }\mathrm{eV}$, with a multimeter scale magnetized region. This limit is around five orders of magnitude below the current constraint from the cosmic rays.

Deep Reinforcement Learning on FPGA for Self-Healing Cryogenic Power Amplifier Control

Wireless sensing and communication for space exploration in areas inaccessible to human often suffer from severe performance degradation due to the cryogenic effects on the transmitters’ circuits. To survive extreme temperatures, programmable radio frequency (RF) power amplifiers (PA) can be built into the transmitter, and intelligent PA controllers need to be integrated into the system to interact with the environment and restore the PA’s functionalities. This problem can be modeled as the controller acts (control the PA) in an environment to maximize the reward (signal quality), and it is most suitable to use reinforcement learning as a solution. This paper presents a cryogenic and energy-efficient reinforcement learning (RL) module on Field Programmable Gate Arrays (FPGA) that can directly program the PA. By characterizing a self-healing PA in a liquid nitrogen environment, we generated an RF signal data set and built an interactive RL environment to model the PA’s behaviors across its configurations and cryogenic temperatures down to −197°C. We developed a deep RL model with a high generalization capability introduced by the neural networks to control the PA and restore its performance. The RL model with fixed-point training and inference is implemented on FPGA to survive the cryogenic conditions and carry out fast and low-power training and inference for PA control. All functionalities of the programmed FPGA operate correctly in the cryogenic testing environment.

Modeling of Josephson Traveling Wave Parametric Amplifiers

The recent developments in quantum technologies, as well as advanced detection experiments, have raised the need to detect extremely weak signals in the microwave frequency spectrum. To this aim, the Josephson travelling wave parametric amplifier, a device capable of reaching the quantum noise limit while providing a wide bandwidth, has been proposed as a suitable cryogenic front-end amplifier. This work deals with the numerical study of a Josephson travelling wave parametric amplifier, without approximations regarding the nonlinearity of the key elements. In particular, we focus on the investigation of the system of coupled nonlinear differential equations representing all the cells of the Josephson travelling wave parametric amplifier, with proper input and output signals at the boundaries. The investigation of the output signals generated by the parametric amplification process explores the phase-space and the Fourier spectral analysis of the output voltage, as a function of the parameters describing the pump and signal tones that excite the device. Beside the expected behavior, i.e., the signal amplification, we show that, depending on the system operation, unwanted effects (such as pump tone harmonics, incommensurate frequency generation, and noise rise), which are not accounted for in simple linearized approaches, can be generated in the whole nonlinear system.

Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers

Design and Investigation of a Metamorphic InAs Channel Inset InP HEMT for Cryogenic Low-Noise Amplifiers

High-Fidelity State Preparation, Quantum Control, and Readout of an Isotopically Enriched Silicon Spin Qubit

Quantum systems must be prepared, controlled, and measured with high fidelity in order to perform complex quantum algorithms. Control fidelities have greatly improved in silicon spin qubits, but state preparation and readout fidelities have generally been poor. By operating with low electron temperatures and employing high-bandwidth cryogenic amplifiers, we demonstrate single qubit readout visibilities >99%, exceeding the threshold for quantum error correction. In the same device, we achieve average single qubit control fidelities >99.95%. Our results show that silicon spin qubits can be operated with high overall operation fidelity.

X- and Q-band EPR with cryogenic amplifiers independent of sample temperature

Inspired by the success of NMR cryoprobes, we recently reported a leap in X-band EPR sensitivity by equipping an ordinary EPR probehead with a cryogenic low-noise microwave amplifier placed closed to the sample in the same cryostat [Šimėnas et al. J. Magn. Reson.322, 106876 (2021)]. Here, we explore, theoretically and experimentally, a more general approach, where the amplifier temperature is independent of the sample temperature. This approach brings a number of important advantages, enabling sensitivity improvement irrespective of sample temperature, as well as making it more practical to combine with ENDOR and Q-band resonators, where space in the sample cryostat is often limited. Our experimental realisation places the cryogenic preamplifier within an external closed-cycle cryostat, and we show CW and pulsed EPR and ENDOR sensitivity improvements at both X- and Q-bands with negligible dependence on sample temperature. The cryoprobe delivers signal-to-noise ratio enhancements that reduce the equivalent pulsed EPR measurement time by 16× at X-band and close to 5× at Q-band. Using the theoretical framework we discuss further improvements of this approach which could be used to achieve even greater sensitivity.

Cryogenic front-end amplifier design for large SiPM arrays in the DUNE FD1-HD photon detection system

The photon detection system of the first far detector (FD1-HD) of the DUNE experiment will detect scintillation photons produced by particle interactions in a kiloton-scale liquid Argon time projection chamber. The photon detectors of choice are silicon photomultipliers (SiPM), 6×6 mm2 each, arranged in groups of 48, which present a significantly low impedance to the front-end electronics. This paper details the design of a cryogenic amplifier with exceptionally low white voltage noise of 0.37 nV√(Hz), based on a silicon-germanium input transistor and a BiCMOS fully differential operational amplifier. It yields excellent single photoelectron resolution even at low overvoltage values. The signal rise time is below 100 ns, and the dynamic range is about 2000 photoelectrons at the typical operating overvoltage. It draws 0.7 mA from a single 3.3 V supply, for a power consumption of 2.4 mW per channel. Simplified models were developed to predict the single photolectron signal shape and the signal to noise ratio, with a good match to measured performance.

Fast time-domain current measurement for quantum dot charge sensing using a homemade cryogenic transimpedance amplifier

We developed a high-speed and low-noise time-domain current measurement scheme using a homemade GaAs high-electron-mobility-transistor-based cryogenic transimpedance amplifier (TIA). The scheme is versatile for broad cryogenic current measurements, including semiconductor spin-qubit readout, owing to the TIA's having low input impedance comparable to that of commercial room-temperature TIAs. The TIA has a broad frequency bandwidth and a low noise floor, with a trade-off between them governed by the feedback resistance RFB. A lower RFB of 50 kΩ enables high-speed current measurement with a −3 dB cutoff frequency f−3dB = 28 MHz and noise-floor NF = 8.5 × 10−27 A2/Hz, while a larger RFB of 400 kΩ provides low-noise measurement with NF = 1.0 × 10−27 A2/Hz and f−3dB = 4.5 MHz. Time-domain measurement of a 2-nA peak-to-peak square wave, which mimics the output of the standard spin-qubit readout technique via charge sensing, demonstrates a signal-to-noise ratio (SNR) of 12.7, with the time resolution of 48 ns, for RFB = 200 kΩ, which compares favorably with the best-reported values for the radio frequency reflectometry technique. The time resolution can be further improved at the cost of the SNR (or vice versa) by using an even smaller (larger) RFB, with a further reduction in the noise figure possible by limiting the frequency band with a low-pass filter. Our scheme is best suited for readout electronics for cryogenic sensors that require a high time resolution and current sensitivity and, thus, provides a solution for various fundamental research and industrial applications.

A 0.22 nV/[formula omitted], 4.5 mW/channel cryogenic amplifier for large arrays of SiPMs in liquid Argon

Several detectors for the next generation of particle physics experiments will make use of silicon photo-multipliers (SiPMs) to detect scintillation photons in liquid Argon. Cryogenic operation reduces dark counts by orders of magnitude, and makes it possible to retain single photon sensitivity even if large arrays of SiPMs are readout by a single amplifier. The total capacitance of a SiPM array with a total area of tens of cm2 can range up to 200 nF. The series noise of the amplifier is the dominant factor that determines the signal to noise ratio of the readout chain. In this contribution, we present a cryogenic amplifier designed to operate in liquid Argon. The base version has a series white noise of 0.37 nV/Hz, while dissipating just 2.4 mW. Design variants have been also tested, which reduce noise to 0.22 nV/Hz, with a power consumption close to 4.5 mW. The amplifier base design and variants have been tested reading out SiPM arrays consisting of up to 96 6 × 6 mm2 SiPMs, for a total photosensitive area of 35 cm2, demonstrating good single photon sensitivity even at low over-voltage values.