In this work, based on the advanced drift and diffusion model with commercial software, the Crosslight APSYS, InP/InGaAs separate absorption, grading, charge and multiplication APDs for high bit-rate operation have been modeled. Basic physical quantities such as band diagram, optical absorption and generation are calculated. Performance characteristics such as dark- and photo-current, photoresponsivity, multiplication gain, breakdown voltage, excess noise, frequency response and bandwidth etc., are simulated. The modeling results are selectively presented, analyzed, and some results are compared with experiments. Device design optimization issues are further discussed with respect to the applicable features of the Crosslight APSYS within the framework of the drift-diffusion theory. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)