Demonstration of saturable absorption (SA) in MoS2 thin films with varying NLO coefficients as a function of reaction time of hydrothermal method is made using the open aperture Z-scan technique. Under nanosecond pulsed laser excitation (532 nm, 9 ns, 10 HZ), saturable absorption occurred involving the overtone of electron - hole pair state and band edge state of MoS2. Further higher ground state cross-section than excited state cross-section favors SA process in MoS2 thin films. The strong saturable absorption behaviors of nanobelt like structured MoS2 film could be attributed to the coexistence of 1T and 2H crystal phases and lower dimension morphology that allows more photons to transit to the higher energy state. Earlier the fabrication of MoS2 thin film on a FTO substrate with a varying reaction time of the hydrothermal technique such as 24, 36, 48 and 60 h was made. Raman spectrum has two sets of characteristics vibration representing the metallic 1T – octahedral coordination Oh phase and the semiconducting 2H – trigonal prismatic D3h phase. XRD and Raman studies confirm the formation of mixed phases of MoS2 with 1T phase dominating over 2H phase in MoS2 thin films. Here the absorbance and band gap of the MoS2 thin film increased with increase in reaction time. The luminescence spectra exhibit prominent peaks at 594 nm and 621 nm resulting from a direct bandgap transition and they are mostly due to the VBM splitting at the K-point. All the films exhibit maximum absorbance in the UV region (291 nm) due to the excitonic features of MoS2 and notable absorbance in the visible region (680 nm) due to the overtones of MoS2 ‘s electron-hole pair. SEM images confirm that nanoplatelet and nanobelt structured MoS2 was formed with varying size with respect to reaction time. Furthermore, while the nanoplatelet structure faded, nanobelts were grown for a prolonged reaction time. Thus, MoS2 nanostructure coated thin film would be useful for the design of saturable absorbers for fabricating optical switches and mode locking devices.