Cross-sectional Transmission Electron Microscopy Research Articles

Novel homozygous SPAG17 variants cause human male infertility through multiple morphological abnormalities of spermatozoal flagella related to axonemal microtubule doublets.

Male infertility can result from impaired sperm motility caused by multiple morphological abnormalities of the flagella (MMAF). Distinct projections encircling the central microtubules of the spermatozoal axoneme play pivotal roles in flagellar bending and spermatozoal movement. Mammalian sperm-associated antigen 17 (SPAG17) encodes a conserved axonemal protein of cilia and flagella, forming part of the C1a projection of the central apparatus, with functions related to ciliary/flagellar motility, skeletal growth, and male fertility. This study investigated two novel homozygous SPAG17 mutations (M1: NM_206996.2, c.829+1G>T, p.Asp212_Glu276del; and M2: c.2120del, p.Leu707*) identified in four infertile patients from two consanguineous Pakistani families. These patients displayed the MMAF phenotype confirmed by Papanicolaou staining and scanning electron microscopy assays of spermatozoa. Quantitative real-time polymerase chain reaction (PCR) of patients' spermatozoa also revealed a significant decrease in SPAG17 mRNA expression, and immunofluorescence staining showed the absence of SPAG17 protein signals along the flagella. However, no apparent ciliary-related symptoms or skeletal malformations were observed in the chest X-rays of any of the patients. Transmission electron microscopy of axoneme cross-sections from the patients showed incomplete C1a projection and a higher frequency of missing microtubule doublets 1 and 9 compared with those from fertile controls. Immunofluorescence staining and Western blot analyses of spermatogenesis-associated protein 17 (SPATA17), a component of the C1a projection, and sperm-associated antigen 6 (SPAG6), a marker of the spring layer, revealed disrupted expression of both proteins in the patients' spermatozoa. Altogether, these findings demonstrated that SPAG17 maintains the integrity of spermatozoal flagellar axoneme, expanding the phenotypic spectrum of SPAG17 mutations in humans.

4H-SiC Wafer Surfaces Irradiated with Femtosecond Laser at Fluence below the LSFL Threshold

This study investigates the microstructural and surface compositional changes of 4H-SiC wafers irradiated with femtosecond lasers at fluences below the threshold for low-spatial frequency laser-induced periodic surface structures (LSFL). Using scanning electron microscopy, cross-sectional transmission electron microscopy, and X-ray photoelectron spectroscopy, we characterized the processed SiC surfaces. Our results demonstrate precise control over the oxide layer thickness on the SiC surface at low laser fluences, allowing for the removal of only a few nanometers. This precise modification holds potential for future applications in wafer bonding by enabling the creation of a shallow SiO2 layer on the SiC surface.

Impact of Cr doping on Hall resistivity and magnetic anisotropy in SrRuO3 thin films

Hall effects, including anomalous and topological types, in correlated ferromagnetic oxides provide an intriguing framework to investigate emergent phenomena arising from the interaction between spin-orbit coupling and magnetic fields. SrRuO3is a widely studied itinerant ferromagnetic system with intriguing electronic and magnetic characteristics. The electronic transport of SrRuO3is highly susceptible to the defects (O/Ru vacancy, chemical doping, ion implantation), and interfacial strain. In this regard, we investigate the impact of Cr doping on the magnetic anisotropy and the Hall effect in SrRuO3thin films. The work encompasses a comprehensive analysis of the structural, spectroscopic, magnetic, and magnetotransport properties of Cr-doped SrRuO3films grown on SrTiO3(001) substrates. Cross-sectional transmission electron microscopy reveals a sharp and coherent interface between the layers. Notably, perpendicular magnetic anisotropy is preserved in doped films with thicknesses up to 113 nm. The resistivity exhibits aT2dependence below the Curie temperature, reflecting the influence of disorder and correlation-induced localization effects. Interestingly, in contrast to the undoped parent compound SrRuO3, an anomaly in the Hall signal has been observed up to a large thickness (56 nm) attributed to the random Cr doping and Ru vacancy. Based on our measurements, a field-temperature (H - T) phase diagram of anomalous Hall resistivity is constructed.

Giant Photoluminescence Enhancement of Ga-Doped ZnO Microwires by X-Ray Irradiation.

Ga-doped zinc oxide (ZnO) microwires hold great promise for developing highly efficient light sources because of the wide bandgap with proper exciton binding energy. However, most microwires grown from one mainstream approach, i.e., chemical vapor deposition (CVD), are morphologically and crystallographically defective, exhibiting limited photoluminescence performances. Herein, a simple and effective X-ray irradiation strategy is demonstrated for enhancing the photoluminescence of Ga-doped ZnO microwire in ambient conditions. Under moderate doses (≤ 150Gy), the photoluminescence monotonically rockets up with X-ray dose increment and achieves nine-fold enhancement at a dose of ≈150Gy, recording high photoluminescence improvement of ZnO microwires to date. The elemental characteristics under different controlled irradiation atmospheres suggest the elimination of surface oxygen vacancy and the cross-section transmission electron microscope reveals prominent lattice relaxations after mild X-ray irradiation. In addition, the X-ray irradiated microwires further exhibit elevated electroluminescence by over three times. The enhanced photoluminescence and electroluminescence as well as long-term stability enable us to imagine the super-rapid applications of ZnO microwires in modern optoelectronic devices.

The Intermediate Barrier Performance of Electroless Co-W-B / Ni-P Stacked Deposits Between Cu and Solder Joint

Nickel (Ni) is one of the most common surface finishing materials for solder joint and wire bonding because it can behave as the diffusion barrier for Copper (Cu) and bring excellent reliability. Electroless Ni plating has many advantages such as high productivity, good thickness uniformity, and the deposition ability for isolated patterns of printed circuit boards without supplying electrolytic power. Electroless Ni plating is widely used as the jointing material for Tin (Sn) or Sn alloy solder in printed circuit boards, lead frames, and so on. The amorphous deposits of electroless Nickel-Phosphorus (Ni-P) generate the intermetallic compounds (IMC) with solder after the reflow and the remaining Ni behaves as the barrier between Cu and solder. In this time, the P amount of Ni-P deposits generally have the impact to the growth of IMC. Electroless Ni-P with high P (high P Ni) such as 10-12 wt% has been selected to achieve both corrosion resistance and solder joint reliability. Because the growth of Sn-Ni IMC between high P Ni is faster than deposits with lower P, the target thickness of high P Ni has been set to approximately 10 µm to sustain the Ni-P layer as the barrier layer between Cu and solder during reflow. However, if the Ni-Sn IMC is repeatedly formed and dissolved by the diffusion after solder jointing, the Ni-P layer reduces and finally disappears. As a result, an additional barrier layer is desirable for higher reliability. In this study, we investigated adding electroless Cobalt-Tungsten-Boron (Co-W-B) as a new intermediate barrier between Cu and solder jointing. We evaluated the bonding strength and IMC analysis after mounting Sn-Cu-Ni-P type solder on Cu/Co-W-B/Ni-P by using different reflow profiles. Results showed that Co-W-B 0.1-0.2 µm/Ni-P 1-2 µm stacked deposits had excellent bonding strength even though the Ni-P thickness is thinner such as 1 µm. After mounting solder, a P-rich layer was generated on the Co-W-B layer in cross-sectional Transmission Electron Microscope (TEM) observation. Scanning Transmission Electron Microscope (STEM) –Energy Dispersive X-ray Spectroscopy (EDS, STEMEDS) analysis showed the P-rich layer and Co-W-B layer prevented diffusion between solder and Cu. Furthermore, even if after the thermal loading of high temperature, the bonding strength was excellent. Additionally, the cross-section analysis of STEM-EDS revealed that a thin layer composed of Ni, Co and P was formed between Co-W-B and the P-rich layer. This thin layer also might behave as the barrier for solder. In conclusion, Co-W-B / Ni-P stacked deposits exhibited excellent reliability as the additional intermediate barrier layer between Cu and solder.

Study on the fabrication of high-quality hafnium oxide thin films using spatial rotated atomic layer deposition and supercritical fluids treatment

This study explores the experimental outcomes and discussions surrounding the deposition of high-quality hafnium oxide (HfO2) thin films using spatial rotated atomic layer deposition (SRALD). The primary objective was to enhance the efficiency of ALD processes while maintaining film quality comparable to conventional methods. The SRALD system, developed by Kudos Nano Technology, was employed to deposit HfO2 films over a four-step process. Following deposition, the films underwent high-pressure annealing and supercritical fluids treatment, which are known for reducing thermal budgets. The key findings revealed that high-pressure annealing resulted in a significant reduction in the leakage current by up to 50%, while supercritical fluids treatment improved the dielectric constant of the films, reaching values as high as 23. These treatments also contributed to enhancing the uniformity and density of the films, as confirmed by cross-sectional transmission electron microscopy and x-ray reflectometry analyses. The electrical properties of the resulting metal–insulator–semiconductor capacitors were thoroughly investigated, demonstrating a marked improvement in capacitance-voltage characteristics with minimal hysteresis.

Engineering of Impact Ionization Characteristics in GaAs/GaAsBi Multiple Quantum Well Avalanche Photodiodes.

The presence of large bismuth (Bi) atoms has been shown to increase the spin-orbit splitting energy in bulk GaAsBi, reducing the hole ionization coefficient (β) and thereby reducing the excess noise seen in avalanche photodiodes. In this study, we show that even very thin layers of GaAsBi introduced as quantum wells (QWs) in a GaAs matrix exhibit a significant reduction of β while leaving the electron ionization coefficient, α, largely unchanged. The optical and avalanche multiplication properties of a series of GaAsBi/GaAs multiple quantum well (MQW) p-i-n structures with nominally 5 nm thick, 4.4% Bi GaAsBi QWs, varying from 5 to 63 periods and corresponding barrier widths of 101 to 4 nm were investigated. From photoluminescence, ω-2θ X-ray diffraction, and cross section transmission electron microscopy measurements, the material was found to be of high quality despite the strain introduced by the Bi in all except the samples with 54 and 63 QW periods. Photomultiplication measurements undertaken with different wavelengths showed that α in these MQW structures did not change appreciably with the number of QWs; however, β decreased significantly, especially at lower values, the noise factor, F, is reduced by 58% to 3.5 at a multiplication of 10, compared to a similar thickness bulk GaAs structure without any Bi. This result suggests that Bi-containing QWs could be introduced into the avalanching regions of APDs as a way of reducing their excess noise.

Elucidating a proper framework for the determination of threading dislocation densities in semiconductor films: a comprehensive study based on Ge/Si(001)

Abstract Methods of deducing threading dislocation densities (TDDs) from x-ray diffraction (XRD) peak widths have been reevaluated based on crystallography theories. Moreover, Ge/Si heteroepitaxial structures were taken as model materials for investigation. The procedure is tailored in accordance with the specific designs of modern XRD systems to minimize instrumental interference, whereas practical characteristics of heteroepitaxial films are also considered to avoid intrinsic errors. TDDs of samples grown with different epitaxy methods were investigated using the newly implemented XRD method and etch pit density (EPD) method, and satisfactory agreement has been achieved among three independently calculated sets of TDD results: two from XRD and one from EPD. These values were further corroborated by cross-sectional transmission electron microscopy analysis. Key considerations that are of scientific and technical importance in TDD studies are also discussed in detail. The present work provides not only the most up-to-date elucidation on obtaining TDD values in semiconductor epitaxial films, but also insights into the long-existing ambiguity in TDD calculation methods, which will be helpful for the future studies of defect density characterizations in various material systems.

Evolutions of Interfacial Microstructures in Cu/SiO2 Hybrid Joints during Temperature Cycling Tests

In this study, nanotwinned Cu (NT-Cu) and SiO2 hybrid joints were fabricated at 200 °C and subjected to thermal cycling tests (TCTs) up to 2000 cycles for the reliability evaluation. It is intriguing that the measured electrical resistance of the Cu-Cu joints decreased as the cycle number increased. Interfacial microstructure analyses were carried out by plan-view and cross-sectional scanning transmission electron microscope (STEM) to analyze the evolution of microstructures at the bonding interfaces and correlate with the increase in the electrical conductivity. Results showed that the bonding quality and conductivity of the NT-Cu/SiO2 hybrid joints were enhanced after the TCTs. The electrical resistance of the joints decreased by 18% after 2000 temperature cycles. Plan-view STEM images indicate the boning interface consisted of numerous discrete nanoscale voids for the as-fabricated Cu-Cu joints, and they merged into larger voids of approximately 100 nm in diameter through Ostwald ripening mechanism during thermal cycling. Furthermore, grain growth also occurred in the interface, resulting in excellent bonding interfaces.

Atomic and electronic structures of the [formula omitted]-FeSi2/Si(001) interface

The atomistic interface structure between β-FeSi2 and Si substrate was investigated by cross-sectional scanning transmission electron microscopy and density functional theory calculations (DFT). A high quality single crystalline β-FeSi2 film was epitaxially grown on Si(001) substrate. We demonstrate that the β-FeSi2(100) plane is bonded to the Si(001) plane with two Si dimers per unit cell. With such interface structure, DFT band calculations reveal that metallic electronic states are localized at the interface. This finding implies the presence of two dimensional electronic states at the interface of β-FeSi2/Si(001), which may have potential applications in silicon-based electronic devices.

Nanoscale stress and microstructure gradients across a buckled Mo-Cu bilayer: Cu self-annealing triggered by interface delamination

Residual stresses in thin film structures significantly impact their mechanical properties and affect interface delamination. Highly compressively stressed thin films buckling is the predominant interfacial failure mode due to strain energy release. In the present study the effect of cross-sectional stress and microstructural gradients of thin films on the buckling behavior are explored in a model material system consisting of a thin Cu film sputtered onto glass and a highly compressively stressed 500 nm thick Mo overlayer causing buckling delamination at the Cu-glass interface. Employing synchrotron cross-sectional X-ray nano-diffraction, multiaxial X-ray elastic strain and microstructure distributions were explored across the cross-section of the adhering and buckled bilayer, respectively. In the adhering state, a gradual thickness evolution of columnar microstructure and residual stress was found for Mo, while in Cu, no microstructure changes and only minimal stress variations were detected along the film thickness. After delamination, diffraction peak broadening and changes in unstrained lattice parameters in the Cu sublayer indicated structural defect annihilation and grain coarsening. These microstructural changes were further validated via cross-sectional transmission electron microscopy. The evaluated residual stress distributions across the two sublayers of the pristine and buckled bilayer were used to quantify the released strain energy per unit area due to buckling, amounting to 0.61 J/m². Further cross-validation of experimental stress results with finite element simulations strengthened the experimental findings, providing a comprehensive understanding of the stress distribution across the buckled bilayer.

Revealing Intrinsic Functionalization, Structure, and Photo-Thermal Oxidation in Hexagonal Antimonene.

Antimonene is one of the more exciting members of the post-graphene family with promising applications in optoelectronics, energy storage and conversion, catalysis, sensing or biomedicine. Efforts have been focused on developing a large-scale production route, and indeed, through a colloidal approach, high-quality few-layers antimonene (FLA) hexagons have been recently obtained. However, their oxidation behavior remains unexplored, as well as their interface, inner structure, and photothermal properties. Herein, it is revealed that the hexagons have an intrinsic surface functionalization with alkyl thiols that protects the core of the hexagonal flake against oxidation, and displayed inner defects related to the crystal formation during synthesis, as confirmed by cross-sectional scanning transmission electron microscopy energy dispersive X-ray spectroscopy (STEM-EDX) and temperature-dependent X-ray photoelectron spectroscopy (XPS) and selected area electron diffraction (SAED) analysis. A comprehensive study of temperature and laser power-dependent Raman spectroscopy on varying FLA hexagon thicknesses is carried out. Thinner flakes (<20nm) exhibited a blueshift and intensity decrease, contrasting with thicker ones resembling typical exfoliated flakes with a redshift. This work addresses a literature gap, providing insights into hexagonal FLA structure and characterization, and highlighting the influence of surface functional groups on oxidation behavior. Additionally, it emphasizes the potential of antimonene hexagons as building blocks for 2D heterostructures, including combinations with antimonene oxides and other 2D materials.

Effect of Zr addition on the corrosion resistance of Ti-Mo alloy in the H2O2-containing inflammatory environment

Reactive oxygen species (ROS), produced by immune cells during inflammatory reaction, are known to promote corrosion of standard biomedical materials such as CP-Ti and Ti-6Al-4V. Electrochemical corrosion in the ROS environment can be further accelerated in the vicinity of fretting regions, where titanium can be polarized towards negative potentials. This study considers both of these aspects and presents corrosion analysis under complex inflammatory conditions for Ti-Mo and Ti-Mo-Zr alloys, which offer exceptional strain-hardening behavior and ductility. Combining electrochemical impedance spectroscopy (EIS) and atomic emission spectroelectrochemistry (AESEC) allowed us to understand the origin of ROS-induced corrosion. At free corrosion conditions, Zr was found to suppress oxide layer growth without any significant effect on the dissolution process. On the other hand, Zr suppressed dissolution rate under cathodic potentials. Although applying cathodic potential resulted in a rapid increase of dissolution rate, cross-section transmission electron microscopy (TEM) analysis did not reveal significant influence of the short cathodic polarization on the oxide film growth during further prolonged exposure at free corrosion conditions.

Morphological Evolution of Atomic Layer Deposited Hafnium Oxide on Aligned Carbon Nanotube Arrays.

Microscopic study of the nucleation and growth of atomic layer deposition (ALD) dielectrics onto carbon nanotubes (CNTs) is an essential while challenging task toward high-performance devices. Here, we capture the morphological evolution and growth behaviors of ALD-HfO2 onto SiO2/Si-supported aligned CNT arrays (A-CNTs) under three ALD recipes via cross-sectional high-resolution scanning transmission electron microscopy. The HfO2 in ALD I (200 °C) preferentially nucleates on the SiO2 substrate in heterogeneous growth mode, resulting in films with considerable pinholes, while ALD II (90 °C) and III (90 °C and extra H2O presoak) exhibit homogeneous growth with nucleation on both SiO2 and CNTs, yielding uniform films. Arrangement defects in A-CNTs exacerbate nonuniformity of HfO2 and tube-tube separation plays deterministic roles affecting the HfO2-CNT interfacial morphology. Electrical measurements from A-CNTs metaloxide-semiconductor devices validate these findings. Our investigation contributes valuable insights for optimizing ALD processes for enhanced dielectric integration on A-CNTs in next-generation electronics.

Oxygen Vacancy Compensation-Induced Analog Resistive Switching in the SrFeO3-δ/Nb:SrTiO3 Epitaxial Heterojunction for Noise-Tolerant High-Precision Image Recognition.

Neuromorphic computing, inspired by the brain's architecture, promises to surpass the limitations of von Neumann computing. In this paradigm, synaptic devices play a crucial role, with resistive switching memory (memristors) emerging as promising candidates due to their low power consumption and scalability advantages. This study focuses on the development of metal/oxide-semiconductor heterojunctions, which offer several technological advantages and have broad potential for applications in artificial neural synapses. However, constructing high-quality epitaxial interfaces between metal and oxide semiconductors and designing modifiable contact barriers are challenging. Herein, we construct high-quality epitaxial metal/semiconductor interfaces based on the metallicity of the perovskite phase SrFeO3-δ (PV-SFO) and a small Schottky barrier in contact with Nb-doped SrTiO3 (NSTO). X-ray diffraction patterns, reciprocal space mapping results, and cross-sectional transmission electron microscopy images reveal that the prepared PV-SFO film exhibits a perfect single-crystal structure and an excellent epitaxial interface with the NSTO (111) substrate. The corresponding memristor exhibits analog-type resistive-variable characteristics with an ON/OFF ratio of ∼1000, stable data retention after 10,000 s, and no noticeable fluctuation in resistance after 10,000 pulse cycles. Electron energy loss spectroscopy, first-principles calculations, and electrical measurements reveal that compensating or restoring oxygen vacancies at the NSTO surface decreases or increases the contact barrier between PV-SFO and NSTO, respectively, thereby gradually regulating the resistance value. Furthermore, high-quality epitaxial PV-SFO/NSTO devices achieve up to 98.21% recognition accuracy for handwriting recognition tasks using LeNet-5-based network structures and 92.21% accuracy for color images using visual geometry group (VGG) network structures. This work contributes to the advancement of interface-type memristors and provides valuable insights into enhancing synaptic functionality in neuromorphic computing systems.

Formation of High-Photoresponsivity BaSi2 Films by Radio-Frequency Sputtering and Evaluation of a BaSi2/TiN/Glass Heterojunction by Transmission Electron Microscopy.

Barium disilicide (BaSi2) is a thin-film solar cell material composed of abundant elements, and its application potential is further enhanced by its formation on inexpensive substrates, such as glass. The effect of the substrate temperature on the co-sputtering of BaSi2 and Ba targets to form BaSi2 films on Si(111) and TiN/glass substrates was investigated. Contrary to expectations, the photoresponsivity reached maximum values exceeding 5 and 2 A W-1, respectively, the highest value ever reported for as-deposited samples formed at 750 °C, more than 100 °C higher than those reported previously. Because the photoresponsivity is proportional to carrier lifetime, this result indicates that high-temperature growth can bring out the high performance of BaSi2 as a light-absorbing layer. Because amorphous SiC (a-SiC) has a larger forbidden band gap and electron affinity than BaSi2, it is considered suitable as an electron transport layer (ETL) material for BaSi2 solar cells. On the basis of this, the formation of BaSi2 (absorption layer)/a-SiC (ETL)/TiN (electrode)/glass heterojunctions was also attempted, and the layered structure was examined by cross-sectional transmission electron microscopy (TEM). Polycrystalline BaSi2 films were found to be even on the amorphous layer by TEM. A high photoresponsivity of over 2 A W-1 was obtained. Therefore, the BaSi2/a-SiC/TiN structure provides a guideline for the structural design of BaSi2-based thin-film solar cells on glass.

Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer

In this paper, a ∼2 nm in situ SiN cap layer on AlGaN barrier layer is grown, which is revealed to be crystalline using high-resolution cross-sectional transmission electron microscopy. Benefitting from superior interface quality of epitaxial crystalline SiN/AlGaN interface, the gate diodes with in situ SiN cap layer feature lower interface trap state density than that with GaN cap layer. By comparing the GaN high electron mobility transistors (HEMTs) with the conventional GaN cap layer, the GaN HEMTs with in situ SiN cap layer exhibit improved device performance, showing higher electron mobility, higher drain current, larger on/off current ratio, and higher transconductance. For breakdown characteristics, the devices with in situ crystalline SiN cap layer show prominent advantages over the GaN cap layer with a 30% breakdown voltage increase to 810 V.

Growth of Hg0.7Cd0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy.

In this paper, we present a study on the direct growth of Hg0.7Cd0.3Te thin films on layered transparent van der Waals mica (001) substrates through weak interface interaction through molecular beam epitaxy. The preferred orientation for growing Hg0.7Cd0.3Te on mica (001) substrates is found to be the (111) orientation due to a better lattice match between the Hg0.7Cd0.3Te layer and the underlying mica substrate. The influence of growth parameters (mainly temperature and Hg flux) on the material quality of epitaxial Hg0.7Cd0.3Te thin films is studied, and the optimal growth temperature and Hg flux are found to be approximately 190 °C and 4.5 × 10-4 Torr as evidenced by higher crystalline quality and better surface morphology. Hg0.7Cd0.3Te thin films (3.5 µm thick) grown under these optimal growth conditions present a full width at half maximum of 345.6 arc sec for the X-ray diffraction rocking curve and a root-mean-square surface roughness of 6 nm. However, a significant number of microtwin defects are observed using cross-sectional transmission electron microscopy, which leads to a relatively high etch pit density (mid-107 cm-2) in the Hg0.7Cd0.3Te thin films. These findings not only facilitate the growth of HgCdTe on mica substrates for fabricating curved IR sensors but also contribute to a better understanding of growth of traditional zinc-blende semiconductors on layered substrates.

Nanometer-thick molecular beam epitaxy Al films capped with in situ deposited Al2O3—High-crystallinity, morphology, and superconductivity

Achieving high material perfection in aluminum (Al) films and their associated Al/AlOx heterostructures is essential for enhancing the coherence time in superconducting quantum circuits. We grew Al films with thicknesses ranging from 3 to 30 nanometers (nm) epitaxially on sapphire substrates using molecular beam epitaxy (MBE). An integral aspect of our work involved electron-beam (e-beam) evaporation to directly deposit aluminum oxide (Al2O3) films on the freshly grown ultrathin epitaxial Al films in an ultra-high-vacuum (UHV) environment. This in situ oxide deposition is critical for preventing the oxidation of parts of the Al films, avoiding the formation of undesired native oxides, and thereby preserving the nm-thick Al films in their pristine conditions. The thicknesses of our Al films in the study were accurately determined; for example, coherence lengths of 3.0 and 20.2 nm were measured in the nominal 3.0 and 20 nm thick Al films, respectively. These Al films were epitaxially grown on sapphire substrates, showing an orientational relationship, denoted as Al(111)⟨21¯1¯⟩∥sapphire(0001)[21¯1¯0]. The Al/sapphire interface was atomically ordered without any interfacial layers, as confirmed by in situ reflection high-energy electron diffraction (RHEED) and cross-sectional scanning transmission electron microscopy (STEM). All sample surfaces exhibited smoothness with a roughness in the range of 0.1–0.2 nm. The Al films are superconducting with critical temperatures ranging from 1.23 to around 2 K, depending on the film thickness.

Achieving high sheet resistance and near-zero temperature coefficient of resistance in NiCr film resistors by Al interlayers

Thin film resistive materials with low temperature coefficients of resistance (TCR) and high sheet resistances are essential for various electronic applications, such as embedded resistors. In this study, Al inserting layers and NiCr resistive layers were sequentially deposited on alumina ceramic substrates via DC magnetron sputtering to fabricate Al/NiCr bilayer resistive materials. The electrical properties of the bilayer films were adjusted by varying the thicknesses of the Al inserting layers and annealing conditions. When the thickness of the Al inserting layer varied from 5 to 7.5 nm, and post-annealing treatments ranging from 200℃ to 400℃ were applied, evident Al-NiCr interdiffusion occurred, forming intermediate layers at the interfaces and oxides on the film surfaces. A mixture of partial crystalline phases and amorphous phases was also observed in the cross-sectional high-resolution transmission electron microscope (HRTEM) images. The formation of intermediate layers and surface oxides and the balance between partial crystalline phases and amorphous phases collectively enhanced the electrical performance of bilayer film resistors, achieving thin film resistors with a remarkably low TCR of −6.61 ppm/K and a sheet resistance of up to 265.95 Ω/sq. By rational design of Al layers, NiCr layers and thermal treatment, thin film resistors with near zero TCRs and extremely wide sheet resistance range of 93.34–1439.01 Ω/sq can be obtained.