Cross-coupled Transistor Pair Research Articles

Ring-Based Direct Injection-Locked Frequency Divider in Display Technology

This letter presents the first RF frequency divider on glass to demonstrate the feasibility of system on display (SoD). The frequency divider is developed in 1P2M 3 mum low-temperature polycrystalline silicon (LTPS) thin-film transistor technology. The core cell of the LTPS direct injection-locked frequency divider is the single stage ring oscillator. The additional cross-coupled transistor pair increases the phase shift of the ring oscillator to meet the oscillation condition. The maximum locking range of the LTPS frequency divider is 2 MHz, and it can be operated from 120 Hz to 8 MHz with frequency tuning. Operated at 10 V, the frequency divider consumes 1.8 mW of power. The area of the frequency divider circuitry is 2.13 times 2.6 mm.

Feasibility Study of a Novel Four Transistor Silicon-on-Insulator Static Random Access Memory Cell Utilizing Partial Trench Isolation

A novel static random access memory (SRAM) cell composed of four thin film silicon-on-insulator (TFSOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) intended for 0.5 V operation is proposed. The body regions of the cross-coupled transistor pair are utilized as load resistors. Transfer MOSFETs connecting each SRAM cell to a word line are dynamic threshold MOSFETs (DTMOSs). By utilizing partial trench isolation, the need of special gate shapes for realizing body contacts is eliminated in the proposed SRAM cell. A device simulator with circuit analysis capability reveals that the proposed SRAM cell can be operated properly under a supply voltage of as low as 0.5 V.