Using rotating analyzer ellipsometry, we determined at room temperature and at 30 K the doping dependence of the ${\mathit{E}}_{1}$ and ${\mathit{E}}_{1}$+${\mathrm{\ensuremath{\Delta}}}_{1}$ critical points of n-type highly Si-doped GaAs(100) (up to carrier concentrations of 1.9\ifmmode\times\else\texttimes\fi{}${10}^{19}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$) exposed to air. For both temperatures the ${\mathit{E}}_{1}$ and ${\mathit{E}}_{1}$+${\mathrm{\ensuremath{\Delta}}}_{1}$ critical points shift to lower energies with increasing dopant concentration. This redshift, however, unexpectedly saturates at a dopant concentration of about 3\ifmmode\times\else\texttimes\fi{}${10}^{18}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}3}$. We found these measurements to be strongly influenced by surface effects. UHV-cleaved GaAs(110) samples (n- and p-type), exhibiting flat bands at the surface, show a significantly smaller energy shift over the whole doping range following a power-law dependence corresponding rather well to the predicted effect of screened impurities, i.e., dopants. We believe that this represents the behavior of bulk doping. Fermi-level pinning introduced by hydrogen adsorption after cleaving produces a behavior similar to that observed for air-exposed surfaces. These measurements are influenced by band bending and carrier depletion in the surface region. Measurements of undoped material in an electric field indicate that the presence of this field does not account for all the band-bending effects. We propose that unscreening of dopants in the depletion region makes an important contribution.