Critical Dimension Atomic Force Microscopy Research Articles

Comparison of EUV Photomask Metrology Between CD-AFM and TEM

Accurate metrology of extreme ultraviolet (EUV) photomask is a crucial task. In this paper, two different methods for reference EUV photomask metrology are compared. One is the critical dimension atomic force microscopy (CD-AFM). In the measurements, the contribution of its AFM tip geometry is usually the dominant error source, as measured AFM images are the dilated results of measured structures by the AFM tip geometry. To solve this problem, a bottom-up approach has been applied in calibrating the (effective) AFM tip geometry where the result is traceably calibrated to the lattice constant of silicon crystals. The other is transmission electron microscopy (TEM). For achieving measurement traceability, structure features are measured in pairs in TEM images; thus the distance between the structure pair calibrated by a metrological AFM in prior can be applied to determine the magnification of the TEM image. In this study, selected photomask structures are calibrated by the CD-AFM, and then sample prepared and measured by high-resolution TEM nearly at the same location. The results are then compared. Of six feature groups compared, the results agree well within the measurement uncertainty, indicating excellent performance of the developed methodology. This research supports the development of a photomask standard, which is applied as a “reference ruler” with improved low measurement uncertainty in photomask fabs.

Accurate tip characterization in critical dimension atomic force microscopy

A new method for accurately characterizing the tip geometry of critical dimension atomic force microscopy (CD-AFM) has been introduced. A sample type IVPS100-PTB whose line features have vertical sidewall, round corner with a radius of approx. 5 ∼ 6 nm and very low surface roughness has been applied as the tip characterizer. The geometry of the line features has been accurately and traceably calibrated to the lattice constant of crystal silicon. In this paper, detailed measurement strategies and data evaluation algorithms have been introduced, particularly concerning several important influence factors such as the line width roughness of the tip characterizer, measurement noise, measurement point density, and the calculation of the averaged tip geometry. Thorough experimental studies have been carried out, indicating high measurement accuracy of the developed method. For instance, tip geometry of a probe type CDR120 with a nominal tip diameter of 120 nm is reconstructed using two different tip characterizers before, during and after it is applied for a calibration of a user sample. The agreement of all 20 obtained tip profiles reaches 0.4 nm, confirming the high measurement stability, low tip wear as well as the high measurement consistency between two tip characterizers. Furthermore, the results of a nanofeature of the user sample after correcting the tip contribution show a repeatability of approximately 0.3 nm when it is repeatedly measured by a same tip, and a reproducibility of 0.9 nm when it is measured using two different tips, confirming the good performance of the tip correction method as well.

Wear comparison of critical dimension-atomic force microscopy tips.

Nanoscale wear affects the performance of atomic force microscopy (AFM)-based measurements for all applications including process control measurements and nanoelectronics characterization. As such, methods to prevent or reduce AFM tip wear is an area of active research. However, most prior work has been on conventional AFMs rather than critical dimension AFM (CD-AFM). Hence, less is known about CD-AFM tip-wear. Given that tip-wear directly affects the accuracy of dimensional measurements, a basic understanding of CD-AFM tip wear is needed. Toward this goal, we evaluated the wear performance of electron beam deposited CD-AFM tips. Using a continuous scanning strategy, we evaluated the overall wear rate and tip lifetime and compared these with those of silicon-based CD-AFM tips. Our data show improved tip lifetime of as much as a factor of five and reduced wear rates of more than 17 times. Such improvements in wear rate means less measurement variability and lower cost.

Novel technology for fabrication of probe tips for SPM using focused ion beam-induced deposition method

The results of an experimental study of the fabrication of high aspect probe tips for atomic force microscopy (AFM) and critical dimension AFM (CD AFM) using the focused ion beam (FIB) milling and ion beam induced deposition of carbon are presented. It is shown that the probes formed by the FIB method have a higher resolution of surface scanning and allow studying nanoscale structures without distortion. In this work, a technique for the formation of AFM probes based on the use of a combination of ion-beam milling and ion-induced carbon deposition was developed. Based on the developed technique, high aspect probe with about 8 μm high, with a tip radius of about 40 nm and an aspect ratio of 30:1, were fabricated. A probe for CD AFM was also formed using FIB-induced deposition of carbon with about 320 nm of flare. The results obtained in the study can be used in the development of technological processes for the manufacturing and modification of special probes for AFM, including probes CD-AFM. The paper shows the possibility of forming the tip of the probes for specialized tasks of nanodiagnostics and nanometrology. The proposed technology allows reducing the artefacts of scanning probe microscopy and improving the adequacy of the results of AFM studies.

Tip-on-tip imaging and self-consistent calibration for critical dimension atomic force microscopy: refinements and extension to second lateral axis

One type of atomic force microscopy (AFM) used for critical dimension (CD) metrology is commonly referred to as CD-AFM; it uses flared tips and two-dimensional (2-D) surface sensing to enable scanning of features with near-vertical sidewalls. An important consideration in this type of CD-AFM metrology is the calibration uncertainty of the tip width (TW). Standards for traceable TW calibration have thus been developed both by National Metrology Institutes and commercial suppliers. The National Institute of Standards and Technology has previously reported the implementation of a self-consistency TW calibration using three CD-AFM tips to image each other. The results of this method were shown to be consistent with prior calibrations based on transmission electron microscope cross sections. The extension of this method to tips <50 nm is demonstrated, as well as the extension of the method to include a second lateral axis.

Application of focused ion beam for the fabrication of AFM probes

The results of an experimental study of the probe tips fabrication for critical-dimension atomic force microscopy (CD-AFM) using the focused ion beam (FIB) induced deposition are presented. Methods of the FIB-induced deposition of tungsten and carbon onto the tip of an AFM probe are studied. Based on the results obtained in the study, probes for the CD-AFM technique with a tip height about 1 μm and radius of 20 nm were created. The formation of CD-AFM probes by FIB-induced deposition allows creating a high efficiency tool for nanotechnology and nanodiagnostics. The use of modified cantilevers allows minimizing the artefacts of AFM images and increasing the accuracy of the relief measurement. The obtained results can be used for fabrication of AFM probes for express monitoring of the technological process in the manufacturing of the elements for micro- and nanoelectronics.

Multiple-instrument evaluation of the consistency and long-term stability of tip width calibration for critical dimension atomic force microscopy

Since 2004, standards for calibration of critical dimension atomic force microscope (CD-AFM) tip width have been available both commercially and through the National Metrology Institutes, such as the National Institute of Standards and Technology in the United States. There have been interlaboratory and intermethod comparisons performed on such samples, but less attention has been paid to the long-term stability of standards and monitoring for damage, wear, or contamination. Using three different CD-AFM instruments, we have tested the consistency and long-term stability of two independent reference calibrations for CD-AFM tip width. Both of these tip width calibrations were based on independently implemented transmission electron microscope reference measurements. There were circumstances in which damage occurred or samples needed to be cleaned. Nevertheless, our results show agreement within the uncertainties and stability over a period exceeding 10 years.

Comparison of line width calibration using critical dimension atomic force microscopes between PTB and NIST

International comparisons between National Metrology Institutes are important to verify measurement results and the associated uncertainties. In this paper, we report a comparison of the line width calibration of a crystalline silicon line width standard, referred to as IVPS100-PTB standard, between the Physikalisch-Technische Bundesanstalt in Germany and the National Institute of Standards and Technology in the United States. Critical dimension atomic force microscopy was the measurement method used for this comparison. Both institutes applied generally the same but independently developed traceability pathways: the scaling factor of the atomic force microscope (AFM) scanner was calibrated by a set of step height and lateral standards certified by metrological AFMs, while the effective tip width was ultimately traceable to the lattice parameter of silicon via high resolution transmission electron microscopy. Good agreement has been achieved in the comparison: For two groups of line features with nominal critical dimensions (CDs) of 50 nm, 70 nm, 90 nm, 110 nm and 130 nm that were compared, the observed deviations of CD results were between −1.5 nm and 0.3 nm. The deviations are well within the associated measurement uncertainty.

Contour metrology using critical dimension atomic force microscopy

The critical dimension atomic force microscopy (CD-AFM) has been proposed as an instrument for contour measurement and verification since its capabilities are complementary to the widely used scanning electron microscopy (SEM). Although data from CD-AFM are three dimensional (3-D) in structure, the planar two-dimensional data required for contour metrology are not easily extracted from CD-AFM data. This is largely due to the limitations of the CD-AFM method for controlling the tip position and scanning, in which the relevant sidewall data are only obtained in one lateral axis. To use CD-AFM for contour metrology, the extracted profiles must include actual sidewall data from both lateral axes. Using two images acquired from orthogonal scan directions, profile extraction, and a method to combine those profiles, a technique for obtaining contours with the CD-AFM is developed. The main sources of error for this technique are described. The contours derived from CD-AFM were compared with those obtained using the SEM. Our results show that CD-AFM has the potential to make important contributions to semiconductor contour metrology.

Transmission electron microscope calibration methods for critical dimension standards

One of the key challenges in critical dimension (CD) metrology is finding suitable dimensional calibration standards. The transmission electron microscope (TEM), which produces lattice-resolved images having scale traceability to the SI (International System of Units) definition of length through an atomic lattice constant, has gained wide usage in different areas of CD calibration. One such area is critical dimension atomic force microscope (CD-AFM) tip width calibration. To properly calibrate CD-AFM tip widths, errors in the calibration process must be quantified. Although the use of TEM for CD-AFM tip width calibration has been around for about a decade, there is still confusion on what should be considered in the uncertainty analysis. We characterized CD-AFM tip-width samples using high-resolution TEM and high angle annular dark field scanning TEM and two CD-AFMs that are implemented as reference measurement systems. The results are used to outline how to develop a rigorous uncertainty estimate for TEM/CD-AFM calibration, and to compare how information from the two electron microscopy modes are applied to practical CD-AFM measurements. The results also represent a separate validation of previous TEM/CD-AFM calibration. Excellent agreement was observed.

Evaluation of carbon nanotube probes in critical dimension atomic force microscopes.

The decreasing size of semiconductor features and the increasing structural complexity of advanced devices have placed continuously greater demands on manufacturing metrology, arising both from the measurement challenges of smaller feature sizes and the growing requirement to characterize structures in more than just a single critical dimension. For scanning electron microscopy, this has resulted in increasing sophistication of imaging models. For critical dimension atomic force microscopes (CD-AFMs), this has resulted in the need for smaller and more complex tips. Carbon nanotube (CNT) tips have thus been the focus of much interest and effort by a number of researchers. However, there have been significant issues surrounding both the manufacture and use of CNT tips. Specifically, the growth or attachment of CNTs to AFM cantilevers has been a challenge to the fabrication of CNT tips, and the flexibility and resultant bending artifacts have presented challenges to using CNT tips. The Korea Research Institute for Standards and Science (KRISS) has invested considerable effort in the controlled fabrication of CNT tips and is collaborating with the National Institute of Standards and Technology on the application of CNT tips for CD-AFM. Progress by KRISS on the precise control of CNT orientation, length, and end modification, using manipulation and focused ion beam processes, has allowed us to implement ball-capped CNT tips and bent CNT tips for CD-AFM. Using two different generations of CD-AFM instruments, we have evaluated these tip types by imaging a line/space grating and a programmed line edge roughness specimen. We concluded that these CNTs are capable of scanning the profiles of these structures, including re-entrant sidewalls, but there remain important challenges to address. These challenges include tighter control of tip geometry and careful optimization of scan parameters and algorithms for using CNT tips.

Process optimization for lattice-selective wet etching of crystalline silicon structures

Lattice-selective etching of silicon is used in a number of applications, but it is particularly valuable in those for which the lattice-defined sidewall angle can be beneficial to the functional goals. A relatively small but important niche application is the fabrication of tip characterization standards for critical dimension atomic force microscopes (CD-AFMs). CD-AFMs are commonly used as reference tools for linewidth metrology in semiconductor manufacturing. Accurate linewidth metrology using CD-AFM, however, is critically dependent upon calibration of the tip width. Two national metrology institutes and at least two commercial vendors have explored the development of tip calibration standards using lattice-selective etching of crystalline silicon. The National Institute of Standards and Technology standard of this type is called the single crystal critical dimension reference material. These specimens, which are fabricated using a lattice-plane-selective etch on (110) silicon, exhibit near vertical sidewalls and high uniformity and can be used to calibrate CD-AFM tip width to a standard uncertainty of less than 1 nm. During the different generations of this project, we evaluated variations of the starting material and process conditions. Some of our starting materials required a large etch bias to achieve the desired linewidths. During the optimization experiment described in this paper, we found that for potassium hydroxide etching of the silicon features, it was possible to independently tune the target linewidth and minimize the linewidth nonuniformity. Consequently, this process is particularly well suited for small-batch fabrication of CD-AFM linewidth standards.

Lateral tip control effects in critical dimension atomic force microscope metrology: the large tip limit

Sidewall sensing in critical dimension atomic force microscopes (CD-AFMs) usually involves continuous lateral dithering of the tip or the use of a control algorithm and fast response piezoactuator to position the tip in a manner that resembles touch-triggering of coordinate measuring machine probes. All methods of tip position control, however, induce an effective tip width that may deviate from the actual geometrical tip width. Understanding the influence and dependence of the effective tip width on the dither settings and lateral stiffness of the tip can improve the measurement accuracy and uncertainty estimation for CD-AFM measurements. Since CD-AFM typically uses tips that range from 15 to 850 nm in geometrical width, the behavior of effective tip width throughout this range should be understood. The National Institute of Standards and Technology (NIST) has been investigating the dependence of effective tip width on the dither settings and lateral stiffness of the tip, as well as the possibility of material effects due to sample composition. For tip widths of 130 nm and lower, which also have lower lateral stiffness, the response of the effective tip width to lateral dither is greater than for larger tips. However, we have concluded that these effects will not generally result in a residual bias, provided that the tip calibration and sample measurement are performed under the same conditions. To confirm that our prior conclusions about the dependence of effective tip width on lateral stiffness are valid for large CD tips, we recently performed experiments using a very large non-CD tip with an etched plateau of ∼2-μm width. The effective lateral stiffness of these tips is at least 20 times greater than typical CD-AFM tips, and these results supported our prior conclusions about the expected behavior for larger tips. The bottom-line importance of these latest observations is that we can now reasonably conclude that a dither slope of 3 nm/V is the baseline response due to the induced motion of the cantilever base.

Tip characterization method using multi-feature characterizer for CD-AFM

In atomic force microscopy (AFM) metrology, the tip is a key source of uncertainty. Images taken with an AFM show a change in feature width and shape that depends on tip geometry. This geometric dilation is more pronounced when measuring features with high aspect ratios, and makes it difficult to obtain absolute dimensions. In order to accurately measure nanoscale features using an AFM, the tip dimensions should be known with a high degree of precision. We evaluate a new AFM tip characterizer, and apply it to critical dimension AFM (CD-AFM) tips used for high aspect ratio features. The characterizer is made up of comb-shaped lines and spaces, and includes a series of gratings that could be used as an integrated nanoscale length reference. We also demonstrate a simulation method that could be used to specify what range of tip sizes and shapes the characterizer can measure. Our experiments show that for non re-entrant features, the results obtained with this characterizer are consistent to 1nm with the results obtained by using widely accepted but slower methods that are common practice in CD-AFM metrology. A validation of the integrated length standard using displacement interferometry indicates a uniformity of better than 0.75%, suggesting that the sample could be used as highly accurate and SI traceable lateral scale for the whole evaluation process.

Study of modification methods of probes for critical-dimension atomic-force microscopy by the deposition of carbon nanotubes

The results of an experimental study of the modification of probes for critical-dimension atomicforce microscopy (CD-AFM) by the deposition of carbon nanotubes (CNTs) to improve the accuracy with which the surface roughness of vertical walls is determined in submicrometer structures are presented. Methods of the deposition of an individual CNT onto the tip of an AFM probe via mechanical and electrostatic interaction between the probe and an array of vertically aligned carbon nanotubes (VACNTs) are studied. It is shown that, when the distance between the AFM tip and a VACNT array is 1 nm and the applied voltage is within the range 20–30 V, an individual carbon nanotube is deposited onto the tip. On the basis of the results obtained in the study, a probe with a carbon nanotube on its tip (CNT probe) with a radius of 7 nm and an aspect ratio of 1:15 is formed. Analysis of the CNT probe demonstrates that its use improves the resolution and accuracy of AFM measurements, compared with the commercial probe, and also makes it possible to determine the roughness of the vertical walls of high-aspect structures by CD-AFM. The results obtained can be used to develop technological processes for the fabrication and reconditioning of special AFM probes, including those for CD-AFM, and procedures for the interoperational express monitoring of technological process parameters in the manufacturing of elements for micro- and nanoelectronics and micro- and nanosystem engineering.

Interactions of higher order tip effects in critical dimension-AFM linewidth metrology

A major challenge in critical dimension atomic force microscope width metrology is accounting for the effects of the tip on the apparent features in an image. The overall effect of the tip is to broaden the apparent width of lines and narrow the apparent width of trenches as a result of the geometrical interaction of the tip with the surface. To a first approximation, this effect can be well-modeled as a constant bias in width measurements, independent of the specific feature characteristics, by the width of the tip. Beyond this approximation, there are a number of smaller tip effects related to the measurement details. Some of these result from the details and interactions of the tip shape and feature shape, resulting in small variations of the tip bias from feature to feature and measurement to measurement. These effects are sometimes called shape effects, secondary effects, or higher order tip effects. One source of higher order effects is due to the lateral dithering of the tip, which increases the effective tip width. However, in addition to this known effect, the tip dither may also affect the apparent edge heights of the tip flare. Although the apparent tip width is expected to depend on lateral dither, the apparent edge height, at least in principle, would not be expected to depend on lateral dither. Our analysis suggests that this apparent dependence results from the interaction of the fine details of the tip flare shape and the dither envelope with the specific algorithm used to estimate the edge height. Consequently, both the sign and the magnitude of the dependence are specific to every tip. This is one example of the inter-dependencies that can be present when evaluating higher-order tip effects. Although these are often small, accurate metrology in some applications may require consideration of possible interactions between such smaller, secondary tip effects. The authors illustrate this with examples from photomask metrology, where measurement of chrome features on binary masks requires some attention to secondary tip effects.

Assessment of critical dimension small-angle x-ray scattering measurement approaches for FinFET fabrication process monitoring

We have used synchrotron-based critical dimension small-angle x-ray scattering (CD-SAXS) to monitor the impact of hydrogen annealing on the structural characteristics of silicon FinFET structures fabricated using self-aligned double patterning on both bulk silicon and silicon-on-insulator (SOI) substrates. H2 annealing under different conditions of temperature and gas pressure allowed us to vary the sidewall roughness and observe the response in the two metrology approaches. In the case of the simpler bulk Si FinFET structures, the CD-SAXS measurements of the critical dimensions are in substantive agreement with the top–down critical dimension scanning electron microscopy metrology. Corresponding characterizations on SOI-based FinFET structures showed less agreement, which is attributed to the more complex structural model required for SOI FinFET CD-SAXS modeling. Because sidewall roughness is an important factor in the performance characteristics of Si FinFETs, we have compared the results of roughness measurements using both critical dimension atomic force microscopy (CD-AFM) and CD-SAXS. The measurements yield similar estimates of sidewall roughness, although the CD-AFM values were typically larger than those generated by CD-SAXS. The reasons for these differences will be discussed.

Effects of lateral tip control in CD-AFM width metrology

Critical dimension atomic force microscopes (CD-AFMs) use flared tips and two-dimensional sensing and position control of the tip-sample interaction to enable scanning of features with near-vertical or reentrant sidewalls. Sidewall sensing usually involves lateral dither of the tip, which was the case in the first two generations of CD-AFM. Current, third-generation instruments also have a fast dither tube actuation (FDTA) mode where a control algorithm and fast response piezo actuator are used to position the tip in a manner that resembles touch-triggering of coordinate measuring machines (CMMs). All methods of tip position control, however, induce an effective tip width that may deviate from the actual geometrical tip width. When lateral dithering is involved, this effect is readily understood as the addition of a dither envelope to the geometrical tip width.The effective tip width is a key correction parameter for accurate feature width measurements and is typically estimated using a tip calibration procedure. However, the possibility exists of small errors in the estimated tip width due to variations and dependencies of the effective width on tip, tool, material, and environmental parameters. We are investigating this possibility through a systematic study of the dependence of the apparent width on measurement mode, dither amplitude, tip type, and sample composition. While we believe that there are potential effects that should be considered carefully, we also conclude, particularly for silicon features, that most potential biases can be removed by performing the calibration and measurement exercises under the same conditions.

Resolving three-dimensional shape of sub-50 nm wide lines with nanometer-scale sensitivity using conventional optical microscopes

We experimentally demonstrate that the three-dimensional (3-D) shape variations of nanometer-scale objects can be resolved and measured with sub-nanometer scale sensitivity using conventional optical microscopes by analyzing 4-D optical data using the through-focus scanning optical microscopy (TSOM) method. These initial results show that TSOM-determined cross-sectional (3-D) shape differences of 30 nm–40 nm wide lines agree well with critical-dimension atomic force microscope measurements. The TSOM method showed a linewidth uncertainty of 1.22 nm (k = 2). Complex optical simulations are not needed for analysis using the TSOM method, making the process simple, economical, fast, and ideally suited for high volume nanomanufacturing process monitoring.

General algorithm and method for scanning a via hole by using critical-dimension atomic force microscopy

As semiconductor devices currently are integrated with high density, they are converted into 3-dimensional form. The interconnections between the layers of the devices are linked through via holes which have diameters of a few hundred nanometers and depths on a micrometer scale, typically. This kind of deep via hole scanning in 3 dimension has become a key issue in semiconductor industry. The only non-destructive method to image it directly is critical-dimension atomic force microscopy (CD-AFM) with a long probing tip. The concept of CD-AFM was suggested by other groups, but a substantial scanning algorithm has not been released yet. We suggest an algorithm, which is composed of a raster scanning and a vector scanning, for scanning samples including many via holes. If a feedback scheme with amplitude-detection mode is used, 3-dimensional scanning can be completed within a few conventional raster scannings.