Abstract
As semiconductor devices currently are integrated with high density, they are converted into 3-dimensional form. The interconnections between the layers of the devices are linked through via holes which have diameters of a few hundred nanometers and depths on a micrometer scale, typically. This kind of deep via hole scanning in 3 dimension has become a key issue in semiconductor industry. The only non-destructive method to image it directly is critical-dimension atomic force microscopy (CD-AFM) with a long probing tip. The concept of CD-AFM was suggested by other groups, but a substantial scanning algorithm has not been released yet. We suggest an algorithm, which is composed of a raster scanning and a vector scanning, for scanning samples including many via holes. If a feedback scheme with amplitude-detection mode is used, 3-dimensional scanning can be completed within a few conventional raster scannings.
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