Plasmon-phonon Coupling Research Articles

Detection of an unintentional Si doping gradient in site-controlled GaN nanowires grown using a Si3N4 mask by spatially resolved cathodoluminescence and Raman spectroscopy

Highly uniform arrays of site-controlled GaN nanowires are synthesized by selective area growth using a Si3N4 mask and molecular beam epitaxy. Systematic modulation of the emission along the nanowire axis is observed in spectrally resolved cathodoluminescence linescans. We show that this intensity change is an indicator of unintentional Si incorporation during growth resulting from the interaction between the impinging Ga atoms and the mask material. The gradual reduction of the cathodoluminescence intensity along the nanowire highlights the important role of the growth geometry within the synthesis reactor, with shadowing from the elongating nanowires inhibiting the reaction with the mask. This gradient in Si doping is confirmed by the quenching of the longitudinal optical phonon line measured in Raman spectra along the nanowire axis. The corresponding carrier density is derived from the frequency of the coupled phonon–plasmon mode. The spectroscopic identification of inversion domain boundaries in the majority of the nanowires is also attributed to the Si incorporation. From temperature dependent cathodoluminescence experiments, we derive the activation energy for excitons bound to these defects.

Ultrasensitive acoustic graphene plasmons in a graphene-transition metal dichalcogenide heterostructure: Strong plasmon–phonon coupling and wavelength sensitivity enhanced by a metal screen

Acoustic plasmons in graphene exhibit strong confinement induced by a proximate metal surface and hybridize with phonons of transition metal dichalcogenides (TMDs) when these materials are combined in a van der Waals heterostructure, thus forming screened graphene plasmon–phonon polaritons (SGPPPs), a type of acoustic mode. While SGPPPs are shown to be very sensitive to the dielectric properties of the environment, enhancing the SGPPPs coupling strength in realistic heterostructures is still challenging. Here we employ the quantum electrostatic heterostructure model, which builds upon the density functional theory calculations for monolayers, to show that the use of a metal as a substrate for graphene-TMD heterostructures (i) vigorously enhances the coupling strength between acoustic plasmons and the TMD phonons, and (ii) markedly improves the sensitivity of the plasmon wavelength on the structural details of the host platform in real space, thus allowing one to use the effect of environmental screening on acoustic plasmons to probe the structure and composition of a van der Waals heterostructure down to the monolayer resolution.

Photoluminescence Quenching Upon Growth of Metal Nanoparticles: Quantum-Mechanical Views.

In dictating the optical processes in metal nanoparticles, for instance, quantum nature of free electrons is significantly dominant and plays very crucial roles at the level of nanoscale dimensions of materials. As consequences of the quantum-confinement effects on the conduction electrons, surface-plasmon resonance induced optical absorption and light emission properties of metal nanoparticles are found to be strongly dependent on physical dimensions of the nanomaterials. In addition, surface-confined acoustic vibration (phonon) modes have been experimentally observed to depend on the sizes of the metal nanoparticles. Also, interestingly, tuning of the surface-plasmon resonance condition is found to enhance the intensity of the acoustic Raman modes in metal nanoparticles. The study highlights the role of plasmon-phonon coupling in Co metal nanoparticles embedded in a silica-glass. In the research field of nanosciences and nanotechnologies, extraordinary behaviour and properties of nanoscale matters are investigated. In this context, interesting studies have been discussed in this review article to elaborate optical, chemical and photoluminescence properties of nanoscale Ag metal particles. Subtle detection of optical phenomena associated with the excited many-body electronic processes in the metal nanoparticles, for example, are very interesting but definitely challenging. Here we make an attempt to find out how the thermal growth of Ag metal nanoparticles in a glass matrix snuffs out the light emission from the samples? Quantum mechanical interpretations of the underlying processes about the quenching of photoluminescence phenomena with the growth of the metal nanoparticles will help to fine tune the optical properties of plasmonic systems as well as to harness potential applications of the nanomaterials.

Composition, Optical Resonances, and Doping of InP/InGaP Nanowires for Tandem Solar Cells: a Micro-Raman Analysis.

We present a micro-Raman study of InP/InGaP tandem junction photovoltaic nanowires. These nanowires render possible InGaP compositions that cannot be made in thin films due to strain. The micro-Raman spectra acquired along the nanowires reveal the existence of compositional changes in the InGaP alloy associated with the doping sequence. The heavily Zn-doped InxGa1-xP (x is the In molar fraction) side of the tunnel diode is Ga rich, x = 0.25, with respect to the n-type and intrinsic segments of the top cell, which are close to the nominal composition of the NWs (x = 0.35). The p-type end segment is still Ga-rich. Electromagnetic resonances are observed in the tunnel diode. The Raman signal arising from the InGaP side of the tunnel diode is significantly enhanced. This enhancement permits the observation of a Raman mode that can be associated with an LO phonon plasmon coupled mode (LOPCM). This mode has not been previously reported in the literature of InGaP, and it permits the Raman characterization of the tunnel diode. The analysis of this mode and its relation to the LO phonon modes of the alloy, InP-like and GaP-like, allows to establish an apparent one-mode behavior for the phonon plasmon coupling. It indicates that hole plasma couples to the GaP-like LO mode. The LOPCMs are modeled using the Lindhard Mermin formalism for the dielectric function.

Damping effect of longitudinal optical phonon—plasmon coupling on thermal radiation from surface micro-gratings on direct and indirect electronic transition type semiconductors

Thermal radiation properties of surface micro-Au-line and space structures on direct and indirect electronic transition-type semiconductors of n-type (n-) GaAs and GaP, respectively, are studied. The electron densities range from 0.62 to 1.0 × 1018 cm−3. The emission spectra of samples on n-GaAs wafers show peak energies significantly shifted from the longitudinal optical (LO) phonon energy due to the LO-phonon−plasmon coupling (LOPC) at 630 K, while partial decoupling is observed. The thermal emission from the sample on n-GaP is peaked at 395.9 cm−1, shifted only by 1.5 cm−1 from the LO-phonon energy, with a linewidth of 12.5 cm−1 at 630 K. The effect of LOPC on the emission from the sample on n-GaP is mostly suppressed because of the electron localization in the X-valley, suggesting an advantage of indirect transition-type semiconductors in LO-phonon resonant infrared emitters using the phonons generated via the electron energy relaxation.

Physical mechanism of Zn and Te doping process of In0.145Ga0.855As0.108Sb0.892 quaternary alloys

We investigated p- and n-type In0.145Ga0.855As0.108Sb0.892 semiconductor alloys grown on GaSb (100) substrates by the liquid phase epitaxy (LPE) technique with different Zinc (Zn) and Tellerium (Te) mole fractions, respectively. Photoluminescence (PL) spectra showed a band gap narrowing effect for p-type doping and a band gap widening for n-type doping, attributed to the type of carrier concentration. The carrier concentration was determined from the band-to-band transition of the PL spectra in the range of 1.20 × 1016 to 2.80 × 1017 and 7.75 × 1016 to 1.02 × 1018 cm−3 for electrons and holes, respectively. Raman spectroscopy measurements showed the phonon modes LO (GaSb–InAs)-like and TO (GaSb–InAs)-like for both types of doping. The frequency dispersion of these modes is closely tied to the presence of native defects, such as vacancies of Ga(VGa), antisites of Ga in Sb (GaSb), and VGa–GaSb complexes. Incorporation of Zn- and Te-doping into the lattice led to a notable reduction in the full width at half maximum (FWHM) of the LO (GaSb–InAs)-like mode, as these dopants effectively diminished native defects. A detailed model is presented for the incorporation of dopants and their effect on the crystal quality. Phonon–plasmon coupling was observed through the L− mode, which overlaps with the TO (GaSb–InAs)-like mode for the carrier concentrations observed in the doped alloys. A theoretical estimation of the frequencies of the coupled modes L+ and L− was implemented as a function of the carrier concentration, based on the effective dielectric function of the quaternary compound. The L+ coupled mode shifts from the phononic to the plasmonic domain for theoretical electron concentrations ranging from ∼1017 to 5 × 1018 cm−3, while in p-type conductivity, the L+ mode remains in the phononic domain for the same range of hole concentrations. The increase in the frequency of the L+ mode with carrier concentration, such as the plasma frequency, provides another reliable method for determining carrier concentrations. This study reveals the physical mechanism of Zn an Te incorporation into InGaAsSb, which is required for the integration of p- and n-type doped quaternary alloys into optoelectronic applications. In addition, it provides a comprehensive understanding of the complex interaction mechanisms, including LO phonon–plasmon coupling modes and optical transitions, opening up new lines for exploring the electrical and structural properties of these materials.

Temperature dependence of the anisotropy of the infrared dielectric properties and phonon-plasmon coupling in n-doped 4H-SiC

Polarized infrared reflectivity spectroscopy is used to measure the temperature dependence of the anisotropy of the infrared dielectric properties and the coupling between phonon and plasmon modes in n-doped 4H-SiC. The advantage of polarized infrared spectroscopy over the commonly used Raman spectroscopy is that it enables dielectric, plasmonic, and transport properties to be probed along and perpendicular to the c-axis, which is impossible with Raman spectroscopy due to its selection rules. In addition, the infrared spectrum, comparatively rare for Raman spectroscopy, can be described at high temperatures with simple classical theory, providing more precise information on the properties of the material being measured. Analysis of the s- and p-polarized infrared reflectivity spectra of an n-doped 4H-SiC substrate shows that the strength and damping of the oscillators, the response of the bound electrons to an infrared excitation, the effective ion mass, and the transverse frequency and anharmonicity of the phonons of n-doped 4H-SiC are temperature-sensitive and strongly anisotropic. It also shows that the plasmonic properties of n-doped 4H-SiC, namely the relaxation time and the collective oscillation frequency of free electrons, are also highly anisotropic and, due to the long relaxation time of free electrons in the direction parallel to the c-axis, only the axial longitudinal phonon-plasmon modes split into low-frequency and high-frequency modes at temperatures above 700 K.

Tunable infrared surface phonon–plasmon coupling in graphene-integrated polar semiconductor heterostructure

Within Reststrahlen bands of polar semiconductors, surface phonon–plasmon coupling is of great interest in infrared nanophotonics. Here, we demonstrate an active long-wavelength infrared device of graphene integrated with an AlN/SiC polar heterostructure. As a low-loss dielectric design, the subwavelength structure device takes advantage of interfacial photogating effect on electrostatic doping of the graphene and the interfaced SiC, and the tunable spectral behavior is originated from the hybridization of the doping-dependent surface phonon–plasmon resonances. This finding provides a steady-state manipulating method to the surface modes for the low-loss nanophotonic devices on SiC platform, and the graphene Fermi level tunable to cross the Dirac point in a steady response even makes the intrinsic graphene photodetectors feasible.

Thickness-Dependent Terahertz Permittivity of Epitaxially Grown PbTe Thin Films

The exceptional thermoelectric properties of PbTe are believed to be associated with the incipient ferroelectricity of this material, which is caused by strong electron–phonon coupling that connects phononic and electronic dynamics. Here, we have used terahertz time-domain spectroscopy measurements to generate complex permittivity spectra for a set of epitaxially grown PbTe thin films with thicknesses between 100 and 500 at temperatures from 10K to 300K. Using a Drude–Lorentz model, we retrieved the physical parameters of both the phononic and electronic contributions to the THz permittivity. We observed a strong decrease, or softening, of the transverse optical phonon mode frequency with decreasing temperature, determining a thickness-independent negative ferroelectric-transition critical temperature, while we found a thickness-dependent anharmonic phonon decay lifetime. The electronic contribution to the permittivity was larger in thinner films, and both the carrier density and mobility increased with decreasing temperature in all films. Finally, we detected a thickness-dependent longitudinal optical phonon mode frequency, indicating the presence of plasmon–phonon coupling.

Ultrastrong plasmon-phonon coupling in double-layer graphene intercalated with a transition-metal dichalcogenide

Ultrastrong plasmon-phonon coupling in double-layer graphene intercalated with a transition-metal dichalcogenide

Screening induced crossover between phonon- and plasmon-mediated pairing in layered superconductors

Two-dimensional (2D) metals can host gapless plasmonic excitations that strongly couple to electrons and thus may significantly affect superconductivity. To investigate the dynamical interplay of the electron–electron and electron–phonon interactions in the theory of 2D superconductivity, we apply a full momentum- and frequency-dependent one-loop theory treating electron–phonon, electron–plasmon, and phonon–plasmon coupling with the same accuracy. We tune the strength of the Coulomb interaction by varying the external screening to the layered superconductor and find three distinct regions. At weak screening, superconductivity is mediated by plasmons. In the opposite limit conventional electron–phonon interactions dominate. In between, we find a suppressed superconducting state. Our results show that even in conventional electron–phonon coupled layered materials, superconductivity can be significantly enhanced by the electron–plasmon coupling in a manner that can be controlled by the external screening.

(Invited) Gallium Oxides Devices for Grid-Scale Power Electronics and High Power Switched Mode RF Amplifiers

Within a decade of the first demonstration of a MESFET device, monoclinic β-Ga2O3 (Ga2O3) devices have made incredible progress in breakdown voltages, power device figure of merit and high-speed performance. It has emerged as a promising ultra-widebandgap semiconductor for next generation power, GHz switching and RF applications. In this talk, we will present an overview of our studies on fundamental transport properties, kilovolt class power MOSFETs and aggressively scaled RF devices. The large bandgap of Ga2O3 leads to a high critical field strength. This high field strength in combination with demonstrated room temperature mobility and calculated electron velocity leads to a higher Baliga’s Figure of Merit (BFoM) and Johnston Figure of Merit (JFoM) than current commercially available widebandgap technologies. Additionally, the large bandgap also enables high temperature operation and radiation hardness making it attractive for space applications such as Mars and Venus missions.In the first part, we will discuss the deep insights gained from the first-principles based transport calculations in Ga2O3. We will discuss the limits to low field mobility, saturation velocities and impact ionization coefficients. The impact of the plasmon-phonon coupling on the phonon limited transport will be discussed. We will present the experimental signatures of plasmon-phonon coupling and anti-screening behavior in ionic gated accumulation layers.Next, I will describe our work on the lateral MOSFETs with improved field plate design and beyond-kV breakdown. Temperature dependent analysis and device simulation suggest an extrinsic breakdown mechanism outside the channel. A simple and yet effective SU-8 polymer passivation technology was developed that results in significant improvement in breakdown voltages. The higher field strength of the SU-8 polymer enables a significant increase in breakdown voltage to 8 kVs in lateral MOSFETs. However, these devices show a high Ron, which is due to the depletion caused by RIE of the channel. We will present the use of ultra-high vacuum annealing techniques to improve the on-resistance of the devices still maintaining the multi-kilo-volt rating of the devices.Due to its high JFoM, Ga2O3 is a potential candidate for high power density RF amplifiers. We will also present the performance advancement that can be obtained in RF power performance using Ga2O3 technology. We will present the challenges in the technology and potential solutions. We will present the experimental DC and pulsed measurements on laterally scaled MOSFETs with 100 nm gate length. Severe DC-RF dispersion was observed which is attributed to the RIE damage and surface states on the oxide. Passivation of the devices shows reduced current collapse. Using aggressive gate lengths and gate-source spacing scaling, (AlxGa1-x)2O3/Ga2O3 heterostructure FETs were fabricated that show record high RF performance. The device transconductance was limited by the regrowth interface resistance. Ex-situ silicon nitride passivation was shown to be effective to reduce DC-RF dispersion. Recently, thin channel MOSFETs with deep-sub-micron gate lengths and source/drain regrowth have demonstrated devices with simultaneously low on resistance, high frequency, high voltages.

Near-field spectroscopy of Dirac plasmons in Bi2Se3 ribbon arrays

Plasmons supported in the massless electron surface states of topological insulators (TIs), known as Dirac plasmons, have great potential in next generation optoelectronics. However, their inherent confinement to the surface makes the investigation of Dirac plasmons challenging. Near-field techniques provide the ideal platform to directly probe Dirac plasmons due to the sensitivity to evanescent fields at the surface. Here, we demonstrate the use of aperture near-field spectroscopy for the investigation of localized terahertz (THz) Dirac plasmon resonances in Bi2Se3 ribbon arrays with widths ranging from 10 to 40 µm. Unlike scattering THz near-field techniques, the aperture method is most sensitive to plasmons with the relevant lower-momenta corresponding to plasmon wavelengths on the scale of ∼20 µm. The combination of THz time-domain spectroscopy and aperture near-field microscopy enables sampling of localized Dirac plasmons in the near-field zone in the 0.5–2.5 THz range. We map the plasmon dispersion, which reveals a coupled plasmon–phonon polariton interaction. The near-field spectra show a higher contrast of the upper polariton branch in comparison with far-field observations. The information revealed by aperture near-field spectroscopy could deepen our understanding of the behavior of Dirac plasmons, leading to the potential development of real-world TI devices.

Определение концентрации электронов проводимости в монокриcталлических образцах n-GaSb по спектрам отражения в дальней инфракрасной области при T=295 K

A method is proposed for separately determining the concentrations of "light" and "heavy" electrons in n-GaSb. It is based on the analysis of reflection spectra in the far infrared region, taking into account the plasmon-phonon coupling. Calibration curves have been calculated that allow one to determine the concentrations of "light" and "heavy" electrons in GaSb using the frequency of high-energy coupled plasmon-phonon mode. For a series of n-GaSb samples the reflection spectra were measured and the concentrations of "light" and "heavy" electrons were determined at room temperature. Electrophysical Van der Paw measurements have been performed on the same samples at room temperature. By comparing the optical and Hall data, the ratios of the mobilities of "light" and "heavy" electrons (parameter b) were determined. This method of determining the value of the parameter b is used for the first time.

Reinforcement of the plasmon–phonon coupling in α-quartz via deposition of gold nanoparticles in etched ion tracks

Reinforcement of the plasmon–phonon coupling in α-quartz via deposition of gold nanoparticles in etched ion tracks

Surface plasmons induce topological transition in graphene/α-MoO3 heterostructures

Polaritons in hyperbolic van der Waals materials—where principal axes have permittivities of opposite signs—are light-matter modes with unique properties and promising applications. Isofrequency contours of hyperbolic polaritons may undergo topological transitions from open hyperbolas to closed ellipse-like curves, prompting an abrupt change in physical properties. Electronically-tunable topological transitions are especially desirable for future integrated technologies but have yet to be demonstrated. In this work, we present a doping-induced topological transition effected by plasmon-phonon hybridization in graphene/α-MoO3 heterostructures. Scanning near-field optical microscopy was used to image hybrid polaritons in graphene/α-MoO3. We demonstrate the topological transition and characterize hybrid modes, which can be tuned from surface waves to bulk waveguide modes, traversing an exceptional point arising from the anisotropic plasmon-phonon coupling. Graphene/α-MoO3 heterostructures offer the possibility to explore dynamical topological transitions and directional coupling that could inspire new nanophotonic and quantum devices.

Plasmon-Phonon Coupling in Electrostatically Gated β-Ga2O3 Films with Mobility Exceeding 200 cm2 V-1 s-1.

Monoclinic β-Ga2O3, an ultra-wide bandgap semiconductor, has seen enormous activity in recent years. However, the fundamental study of the plasmon-phonon coupling that dictates electron transport properties has not been possible due to the difficulty in achieving higher carrier density (without introducing chemical disorder). Here, we report a highly reversible, electrostatic doping of β-Ga2O3 films with tunable carrier densities using ion-gel-gated electric double-layer transistor configuration. Combining temperature-dependent Hall effect measurements, transport modeling, and comprehensive mobility calculations using ab initio based electron-phonon scattering rates, we demonstrate an increase in the room-temperature mobility to 201 cm2 V-1 s-1 followed by a surprising decrease with an increasing carrier density due to the plasmon-phonon coupling. The modeling and experimental data further reveal an important "antiscreening" (of electron-phonon interaction) effect arising from dynamic screening from the hybrid plasmon-phonon modes. Our calculations show that a significantly higher room-temperature mobility of 300 cm2 V-1 s-1 is possible if high electron densities (>1020 cm-3) with plasmon energies surpassing the highest energy LO mode can be realized. As Ga2O3 and other polar semiconductors play an important role in several device applications, the fundamental understanding of the plasmon-phonon coupling can lead to the enhancement of mobility by harnessing the dynamic screening of the electron-phonon interactions.

Revealing the Interaction of Charge Carrier-Phonon Coupling by Quantification of Electronic Properties at the SrTiO3/TiO2 Heterointerface.

Oxide heterointerfaces with high carrier density can interact strongly with the lattice phonons, generating considerable plasmon-phonon coupling and thereby perturbing the fascinating optical and electronic properties, such as two-dimensional electron gas, ferromagnetism, and superconductivity. Here we use infrared-spectroscopic nanoimaging based on scattering-type scanning near-field optical microscopy (s-SNOM) to quantify the interaction of electron-phonon coupling and the spatial distribution of local charge carriers at the SrTiO3/TiO2 interface. We found an increased high-frequency dielectric constant (ε∞ = 7.1-9.0) and charge carrier density (n = 6.5 × 1019 to 1.5 × 1020 cm-3) near the heterointerface. Moreover, quantitative information between the charge carrier density and extension thickness across the heterointerface has been extracted by monochromatic near-field imaging. A direct evaluation of the relationship between the thickness and the interaction of charge carrier-phonon coupling of the heterointerface would provide valuable information for the development of oxide-based electronic devices.

Observation of photo-induced plasmon-phonon coupling in PbTe via ultrafast x-ray scattering.

We report the observation of photo-induced plasmon–phonon coupled modes in the group IV–VI semiconductor PbTe using ultrafast x-ray diffuse scattering at the Linac Coherent Light Source. We measure the near-zone-center excited-state dispersion of the heavily screened longitudinal optical (LO) phonon branch as extracted from differential changes in x-ray diffuse scattering intensity following above bandgap photoexcitation. We suggest that upon photoexcitation, the LO phonon-plasmon coupled (LOPC) modes themselves become coupled to longitudinal acoustic modes that drive electron band shifts via acoustic deformation potentials and possibly to low-energy single-particle excitations within the plasma and that these couplings give rise to displacement-correlations that oscillate in time with a period given effectively by the heavily screened LOPC frequency.

Investigating the thermal transport in gold decorated graphene by opto-thermal Raman technique

We report a systematic study on the thermal transport properties of gold nanoparticles (Au NPs) decorated single-layer graphene on a SiO2/Si substrate by the opto-thermal Raman technique. Our results, with moderate Au NPs coverage (<10%), demonstrate an enhancement in the thermal conductivity of graphene by ∼55% from its pristine value and a decrement in the interface conductance by a factor of 1.5. A detailed analysis of our results shows the importance of the photo-thermal conversion efficiency of Au NPs, plasmon–phonon coupling and lattice modifications in the graphene developed after gold nanoparticles deposition in enhancing the thermal conductivity and reducing the interface thermal conductance of the system. Our study paves way for a better understanding of the thermal management in such hybrid systems, which are envisioned as excellent candidates for optoelectronics and photonics applications.