Copper Tin Sulfide Research Articles

Study of a Lead-Free Perovskite Solar Cell Using CZTS as HTL to Achieve a 20% PCE by SCAPS-1D Simulation.

In this paper, a n-i-p planar heterojunction simulation of Sn-based iodide perovskite solar cell (PSC) is proposed. The solar cell structure consists of a Fluorine-doped tin oxide (FTO) substrate on which titanium oxide (TiO2) is placed; this material will act as an electron transporting layer (ETL); then, we have the tin perovskite CH3NH3SnI3 (MASnI3) which is the absorber layer and next a copper zinc and tin sulfide (CZTS) that will have the function of a hole transporting layer (HTL). This material is used due to its simple synthesis process and band tuning, in addition to presenting good electrical properties and stability; it is also a low-cost and non-toxic inorganic material. Finally, gold (Au) is placed as a back contact. The lead-free perovskite solar cell was simulated using a Solar Cell Capacitance Simulator (SCAPS-1D). The simulations were performed under AM 1.5G light illumination and focused on getting the best efficiency of the solar cell proposed. The thickness of MASnI3 and CZTS, band gap of CZTS, operating temperature in the range between 250 K and 350 K, acceptor concentration and defect density of absorber layer were the parameters optimized in the solar cell device. The simulation results indicate that absorber thicknesses of 500 nm and 300 nm for CZTS are appropriate for the solar cell. Further, when optimum values of the acceptor density (NA) and defect density (Nt), 1016 cm−3 and 1014 cm−3, respectively, were used, the best electrical values were obtained: Jsc of 31.66 mA/cm2, Voc of 0.96 V, FF of 67% and PCE of 20.28%. Due to the enhanced performance parameters, the structure of the device could be used in applications for a solar energy harvesting system.

Effect of copper precursor layer thickness on the properties of preferentially oriented Cu4SnS4 thin films for photovoltaic applications

Copper tin sulfide (Cu–Sn–S) thin films have gathered great attention in the research for earth-abundant, non-toxic, and low-cost thin film solar cells. In this investigation, preferentially oriented Cu 4 SnS 4 thin films have been fabricated via a combination of chemical bath deposition and thermal evaporation for the first time. Stacked precursor layers of thermally evaporated copper and chemically deposited SnS thin films were annealed in the sulfur atmosphere at a temperature of 823 K for 1 h. The copper layer thickness was varied from 150 to 200 nm. Various characterization techniques were employed to study the structure, morphology, optical and electrical properties of the Cu 4 SnS 4 films (XRD, Raman, FE-SEM, AFM, UV–Vis spectroscopy) formed at different conditions. The orthorhombic structured films formed at the best conditions showed highly oriented growth along (102) plane. An intense peak at 316 cm −1 in the Raman spectrum further confirmed the formation of the Cu 4 SnS 4 phase. The crystalline sizes and bandgap energies of deposited films varied between 33.6 and 52.7 nm and 1.0–1.6 eV, respectively. The sample with a copper precursor layer thickness of 185 nm exhibited an optimum bandgap of 1.4 eV and larger grains implies that a copper layer of 185 nm in thickness on 200 nm SnS is an optimal precursor layer thickness for achieving highly oriented Cu 4 SnS 4 thin film with excellent properties. • First attempt to fabricate Cu 4 SnS 4 thin films via a combination of physical-chemical deposition methods. • Cu 4 SnS 4 thin films with novel preferential orientation along (102) plane. • Optimization of copper precursor layer thickness resulted enhanced crystallinity. • The optimum bandgap of 1.4 eV for photovoltaic applications.

Bimetallic Copper Tin Sulfide Nanosheet Arrays Encapsulated in Nitrogen-Doped Carbon Shells for Boosted Sodium Storage Performance

Bimetallic Copper Tin Sulfide Nanosheet Arrays Encapsulated in Nitrogen-Doped Carbon Shells for Boosted Sodium Storage Performance

Copper-tin-sulphide (CTS) thin films, obtained by a two-electrode electrochemical deposition of metal precursors, followed by soft annealing and sulfurization

CTS thin films have been prepared by soft annealing and sulfurization of electrodeposited Cu-Sn precursors. The stacked elemental layer approach was used to deposit the elemental precursors on an ITO substrate using a two-electrode electrochemical cell, with graphite plate as the counter electrode. The stacked metallic layer was then soft annealed in an Argon atmosphere at 350 °C and subsequently, sulfurized at different temperatures of 500 0C and 550 0C for one hour to form CTS films. The films have been characterized by a variety of techniques. From the XRD analysis, the CTS thin films obtained at a sulfurization temperature of 500 oC showed the coexistence of SnS, Cubic-Cu2Sn3S7 and hexagonal-Cu4S16Sn7 phases. The majority phase was clearly identified as cubic-Cu2SnS3, with (111) preferential orientation. For the films sulfurized at 550 oC, the pattern of prominent peaks showed the presence of the Hexagonal-Cu4S16Sn7 phase of CTS with preferred orientation along the (202) plane. There were relatively fewer low intensity peaks assigned to the secondary phases, indicating an improvement in CTS purity at the higher sulfurization temperature. SEM images of the CTS films show a compact, homogenous morphology, with densely packed grains. The films sulfurized at 550 oC, showed better homogeneity. EDAX spectra of the sulfurized alloy precursors were consistent with the formation of CTS. The film obtained at the lower sulfurization temperature had two band gaps as a consequence of the mixture of phases present in the sample. The film obtained at the higher sulfurization temperature had an energy band gap of 1.5 eV, which falls within the range of values reported in literature. The present work provides a new synthesis route for the electrodeposition of CTS thin film for device applications.

Solution-processed high-performance p-channel copper tin sulfide thin-film transistors

We introduce a solution-processed copper tin sulfide (CTS) thin film to realize high-performance of thin-film transistors (TFT) by optimizing the CTS precursor solution concentration.

Design and Simulation of Single-Junction and Multi-junction Thin-Film Solar Cells Based on Copper Tin Sulfide

In this paper, single- and multi-junction thin-film solar cells based on copper tin sulfide (CTS) are proposed. The proposed single-junction cell consists of copper zinc tin sulfide (CZTS) and CTS, as a bilayer absorber. The double-junction structure is made of CZTS and CTS absorber layers for the top and bottom cells, respectively. Furthermore, a CZTS/(CZTSe)/CTS triple-junction cell, which is based on earth-abundant and non-toxic elements, is investigated. The performance of the proposed cells in the presence of tin sulfide layers as the back surface field to reduce recombination is also examined. In order to reach the maximum efficiency, the thickness of layers is varied and optimized. The simulated efficiency of the triple-junction structure, including CZTS, CZTSe, and CTS with the optimal thickness of 0.4 μm, 0.7 μm, and 0.7 μm, respectively, was as high as 34.1%.

Mesoporous copper tin sulphide quantum dots as photoanode materials for efficient dye- sensitized solar cell

In this work, we have synthesized polyethylene glycol capped copper tin sulphide (CTS/PEG) quantum dot thin films by Successive Ionic Layer Adsorption and Reaction (SILAR) technique. The effect of varying PEG content on the structural, optical, morphological and electrical properties of CTS/PEG was investigated. All the samples were crystalline, matching well with tetragonal CTS corresponding to JCPDS 01−089-4714, with high and constant transmittance. The thin film thickness, roughness parameters and optical constants were determined from ellipsometric analysis. The thin film samples were found to be porous with the pore size and particle size decreasing with increasing PEG content. Conductivity and mobility of the charge carriers enhanced with increasing PEG content. Owing to porous nature of CTS/PEG quantum dot thin films with high bandgap, high conductivity, high mobility and low refractive index, these thin films can be effectively used as photoanodes for dye sensitized solar cells.

Facile hydrothermal synthesis of Cu2SnS3 nanoparticles for photocatalytic dye degredation of mythelene blue

Abstract Ternary copper tin sulfide Cu2SnS3 (CTS) has been effectively amalgamated by hydrothermal method. The crystal structure, surface morphology and optical properties of the primed sample have been studied. XRD pattern of synthesized CTS shows the triclinic crystal structure. The SEM images confirm the uniform spherical grain like structure. The photocatalytic activity of the as synthesized CTS was tested under visible light irradiation by measuring the degradation of methylene blue (MB). CTS show a broad absorption in the visible and the IR region. The optical bandgap of CTS nanoparticles (2.2 eV) has been determined. A more realistic mechanism for the photocatalytic activity of CTS is proposed.

Infrastructure of Synchrotronic Biosensor Based on Semiconductor Device Fabrication for Tracking, Monitoring, Imaging, Measuring, Diagnosing and Detecting Cancer Cells

Copper Zinc Antimony Sulfide (CZAS) is derived from Copper AntimonySulfide (CAS), a famatinite class of compound. In the current paper, thefirst step for using Copper, Zinc, Antimony and Sulfide as materials inmanufacturing synchrotronic biosensor-namely increasing the sensitivity of biosensor through creating Copper Zinc Antimony Sulfide, CZAS(Cu1.18Zn0.40Sb1.90S7.2) semiconductor and using it instead of CopperTin Sulfide, CTS (Cu2SnS3) for tracking, monitoring, imaging, measuring,diagnosing and detecting cancer cells, is evaluated. Further, optimization oftris(2,2'-bipyridyl)ruthenium(II)(Ru(bpy)32+) concentrations and CopperZinc Antimony Sulfide, CZAS (Cu1.18Zn0.40Sb1.90S7.2) semiconductor as two main and effective materials in the intensity of synchrotron fortracking, monitoring, imaging, measuring, diagnosing and detecting cancercells are considered so that the highest sensitivity obtains. In this regard,various concentrations of two materials were prepared and photon emissionwas investigated in the absence of cancer cells. On the other hand, ccancerdiagnosis requires the analysis of images and attributes as well as collectingmany clinical and mammography variables. In diagnosis of cancer, it isimportant to determine whether a tumor is benign or malignant. The information about cancer risk prediction along with the type of tumor are crucialfor patients and effective medical decision making. An ideal diagnosticsystem could effectively distinguish between benign and malignant cells;however, such a system has not been created yet. In this study, a model isdeveloped to improve the prediction probability of cancer. It is necessary tohave such a prediction model as the survival probability of cancer is highwhen patients are diagnosed at early stages.

Standard Enthalpy of Cu2SnS3 (Mohite) Formation from Sulfides

Copper tin sulfide Cu2SnS3 (mohite) is the endmember of the binary system Cu2SnS3–MeIIS, in which a number of four-component compounds (known as stannic minerals) are formed; it is also a representative of a large number of solid solutions, some occurring in nature and used in metallurgy and as promising materials for the production of solar cells. The standard enthalpy of mohite formation from covelline (CuS) and herzenbergite (SnS) has been determined: 2CuS + SnS → Cu2SnS3, $${{\Delta }_{r}}H_{{{\text{298}}.{\text{15}}\,\,{\text{K}}}}^{^\circ }$$(Cu2SnS3) = ‒(51.01 ± 1.26) kJ/mol. The standard enthalpy of Cu2SnS3 formation from elements kJ/mol has been calculated using reference data: $${{\Delta }_{f}}H_{{{\text{298}}.{\text{15}}\,\,{\text{K}}}}^{^\circ }$$(Cu2SnS3) = –(263.79 ± 2.28).

Plasmonic solar cells using mohite Cu2SnS3 nanoparticles

In this paper, we introduce a new technique for the synthesis of mohite copper tin sulphide (Cu2SnS3) nanoparticles. The method employed is cost effective, non-vacuum, room temperature colloidal synthesis. Here two sulphur sources are used in the synthesis process, sodium sulphide and thioacetamide where the latter is assumed responsible for the mohite crystal structure. The as-prepared sample was characterized using XRD, Laser Raman Spectrometer, SEM/EDS, UV–VIS-NIR spectrophotometer and FTIR spectrophotometer. The sample synthesized appears greenish-black with a metallic lustre. Due to the presence of free electrons on the nanoparticle surface, surface plasmon resonance occurs at 807 nm. Using the uncertainty principle, the plasmon lifetime has been calculated to be 42.5 ns, which is a reasonably longer lifetime, enabling higher photon absorption. Thus mohite copper tin sulphide nanoparticles have a potential application in the absorber layer of low cost plasmonic solar cells.

Ultra-low thermal conductivity and improved thermoelectric performance in disordered nanostructured copper tin sulphide (Cu2SnS3, CTS)

Copper tin sulphide (Cu2SnS3, CTS) is a promising p-type thermoelectric material. In the present work, we have investigated the cation disorder in CTS disks made by sintering powders produced via high energy reactive ball-milling. The crystalline structures, electronic and thermal properties were systematically investigated. As-milled CTS shows a disordered cubic structure (c-CTS), preserved with thermal treatment up to 500 °C. By increasing the thermal treatment temperature, CTS gradually evolves towards the ordered monoclinic structure (m-CTS), reaching complete order at 650 °C. The disordered CTS has several times higher zT than the ordered CTS. In fact, ordered CTS has high thermopower, up to 700 μV/K, and high electrical resistivity leading to zT < 0.05 above 700K; whereas, disordered (c-CTS) has comparatively high zT∼0.30 above 700K. This has been related to the lower electrical resistivity, and the ultra-low thermal conductivity (k∼0.26 W/m-K), resulting from the disordered structure, promoting Phonon-Glass-Electron-Crystal (PGEC) characteristics. In our best knowledge, zT∼0.30 above 700K is the highest in CTS samples without acting on the chemistry of the system.

OPTIMIZATION OF MONOCLINIC Cu2SnS3 (CTS) THIN FILM SOLAR CELL PERFORMANCES THROUGH NUMERICAL ANALYSIS

Investigation on the performance of monoclinic phase copper tin sulfide (CTS) based thin film solar cells has been carried out numerically by AMPS-1D simulation software. Based on proposed cell structure, the influence of carrier concentration and thickness of both absorber and buffer layers as well as the work function of back contact metal are studied to enhance the output performance of monoclinic phase CTS thin film solar cell. The effect of operating temperature is also tested for CTS solar cell to ensure the sustainability at outdoor installation. After optimizing the thickness and carrier concentration of both layers, the best CTS cell is delivers 9.61% efficiency with back contact of molybdenum. However, after optimization of back contact metal work function the conversion efficiency is further increased to 17.87% for tungsten as back contact metal with a work function of 5.25 eV. The increased temperature shows a negative effect on output performance with a decline efficiency rate of -0.33/K. All these simulation results will give some important guides for feasibly fabricating higher efficiency CTS solar cells.

Influence of deposition temperature and time on the optical behavior of sprayed Cu2SnS3 thin films

Copper tin sulfide (CTS) has potential as solar cell absorber, and its photovoltaic properties can be enhanced for future energy applications. The CTS thin films were prepared by spray pyrolysis method at different deposition temperatures and time using single-step process. X-ray diffraction patterns of the samples confirmed polycrystalline structure at higher temperatures and shorter deposition time, while, secondary phases were formed at higher temperature and longer deposition time. Scanning electron microscope micrographs showed that the CTS films have a homogeneous and dense morphology. High optical absorption coefficient for all the samples determined from the absorption coefficient versus photon energy plot is above 3 × 104 cm−1 and near the fundamental absorption edge, making the CTS thin film suitable for solar cell applications. The band energy values of 1.51 eV observed in this study showed the potential application of this ternary material as an efficient absorber material for thin films used in photovoltaic industry.

Effect of Pelargonidin on carrier recombination lifetime of CTS quantum dots

In the current work, we have prepared stacks of Copper tin sulphide (CTS)/Pelargonidin core/shell quantum dots on soda lime substrates by SILAR technique. Copper tin sulphide quantum dots were of tetragonal phase matching well with JCPDS 089-4714. The absorption coefficient of the core/shell quantum dots increased while the photoluminescence intensity decreased with increasing shell thickness. Decrease of charge carrier confinement energy due to leakage of wavefunction into the shell is the cause of fall in PL intensity. Three transitions were found in all the samples corresponding to 1Se-1Sh, 1Pe-1Ph and 1De-1Dh transitions using the non-interacting particle model. Charge carrier recombination lifetime of P state was found to be in the order of 100 ns, with lifetime increasing with shell thickness, probably due to the P state being the most occupied at room temperature and decrease of surface trap sites with increasing shell thickness. Owing to the high lifetime of CTS/Pelargonidin core/shell quantum dots, these can be used effectively in solar cells where recombination time is a deciding factor for efficiency and also in bioimaging of living cells and tissues.

Investigations on post sulphurised Cu2ZnSnS4 absorber layer thin films prepared using radio frequency magnetron sputtering

Copper zinc tin sulfide (CZTS) quaternary semiconductor thin films were prepared using binary sulfur rich sputtering targets - copper sulfide (CuS), zinc sulfide (ZnS), and tin sulfide (SnS) by Radio Frequency Magnetron Sputtering with the stacking sequence CuS/ ZnS/ SnS at a substrate temperature of 300 °C. The films were then subsequently sulphurised at 350 °C in Hydrogen Sulfide atmosphere for 60 min. X-ray diffraction studies carried out on the CZTS films revealed the presence of CZTS kesterite phase along the 〈112〉 and 〈220〉 directions. X- ray diffraction results were validated by Raman spectroscopy. The composition of CZTS thin films were confirmed using X-Ray photoelectron spectroscopy and the atomic percentage of the individual elements were quantitatively estimated. The Valance band spectra and Ultra-violet photoelectron spectroscopy were used to study the electronic properties of the sulphurised CZTS thin films. The optical properties of CZTS thin films were studied using Ultraviolet - visible spectrophotometer and the optical band gap was found to be 1.477 eV. The Hall Effect measurements confirmed the p-type nature of the films and the results are discussed.

An exploration into the quantum confinement of CTS/natural dye core- shell quantum dots

In this work, we have presented a simple way of changing the confinement energies of Copper Tin Sulphide (CTS) quantum dots using natural dyes as shell material. Tetragonal CTS quantum dots in the size range of 1.7 nm–2.2 nm, of bandgaps of 2.48eV and 5.0 eV were prepared by means of a green colloidal synthesis technique. These quantum dots were treated with natural dyes such as onion and beetroot skin dyes. Pelargonidin and Betanin (pigments of onion and beetroot skin dye respectively) formed hydrogen bonding with the capping agent, thus forming a shell around the CTS quantum dots. The change in confinement due to the effect of dye as shell was studied from absorption, photoluminescence and infrared spectroscopic techniques. The transitions occurring were analysed using a theoretical approach. CTS quantum dots, with its high transmittance in a wide range of wavelengths find promising applications in the buffer layer of solar cells.

Effect of pH on SILAR deposited CTS thin films

Copper tin sulphide thin films have been prepared using successive ionic layer adsorption and reaction method on soda lime glass substrate. In this work cationic precursor solution bath contains copper chloride, tinchloride, triethanolamine and anionic precursor solution contains thioacetamide respectively for the deposition of thin films. The prepared films were characterized by X-ray diffraction spectroscopy (XRD), UV-Vis NIR spectroscopy, scanning electron microscopy(SEM) and energy dispersive analysis(EDS). Average crystalline size calculated using Debye-Scherrer formula is 65.59nm for CTS1 and 71.17nm for CTS2. Band gap of CTS1 is 1.899ev and that of CTS2 is 1.647ev. The band gaps are suited for solar cell applications.

Effect of synthesis parameters on the structural, optical, morphological and electrical properties of n-type CTS nanostructures

In this work we have prepared n-type copper tin sulphide (CTS) quantum dot thin films for efficient window layers of solar cells. The change in type of CTS was achieved by the use of Triethanolamine (TEA) as the complexing agent. Studies were made on CTS thin films by changing the amount of complexing agent and also by changing the Cu:Sn and S:Sn ratios. All the samples showed low absorbance and high transmittance in the visible and infra red regions. The bandgaps are high enough to be used in buffer layers. Increasing the amount of TEA increased the crystallite size and thereby decreased the bandgap. Presence of excess copper in the material enhanced the conductivity of the material largely and also lead to the formation of Schottky barriers making Cu rich samples useful in rectification too. Increased sulphur content has been found to improve the crystallinity of CTS thin films.

Ternary Cu2SnS3 Thin Films Deposited by Fully Controlled System of Spray Pyrolysis

A fully computerized system of spray pyrolysis was employed for fabricating copper tin sulphite ternary thin film onto glass substrates. During deposition process, the glass substrate was maintained at 310 ± 10 °C. After dissolving the raw chemicals, a mixture of their aqueous solutions was used for spraying process. The optimum solution mixture at the volumetric ratio [S/(Cu+Sn)=1] at 1.5 of pH. XRD investigation was approved a monoclinic phase of CTS. A number of different platform speed was tested in the deposition process. XRD diffraction peaks were described at 2θ = 28.39°, 33.02°, 47.34°, and 56.39° corresponding to the and , respectively. These are crystal planes of monoclinic copper tin sulphide. The FTIR study certified a number of the chemical bond of Cu-, Sn- and S-. The grain size was observed in the range of nano using Scherrer formula. Studying surface morphology of CTS films reveals a uniform coating on the substrates which approved by SEM investigations.