Copper Antimony Sulfide Thin Films Research Articles

Effect of carrier gas on copper antimony sulfide thin films by spray pyrolytic approach

This study explores the ternary compound semiconductor as a potential absorber layer for third-generation solar cells. CuSbS2, a promising candidate for thin film absorber layers, is fabricated using a simple spray pyrolysis method. The research specifically investigates the influence of two different carrier gases during the fabrication process. X-ray diffraction as well as Raman studies confirm that the films exhibit a chalcostibite structure. Notably, films fabricated with nitrogen as the carrier gas demonstrate enhanced crystallinity, accompanied by reduced microstrain and dislocation density. Furthermore, these films exhibit a significantly improved absorption coefficient, reaching 105 cm-1 . Optical studies indicate that the materials possess a direct band gap of 1.50 eV and exhibit p-type conductivity. CuSbS2 thin film heterojunction solar cell exhibits a maximum efficiency of 0.49%.

Annealing time dependence on the structural, optical, optoelectrical, and electrical properties of copper antimony sulfide thin film synthesized using the dip coating method

Copper antimony sulfide (CAS) thin films were synthesized by the dip coating method and annealed at 473 K for different annealing times (1, 2, 3, 4, and 5 h). The nature of the structural and phase compositions of the CAS thin films were investigated using an x-ray diffractometer. For the annealing times of 1–4 h, the structural parameters of the thin films were evaluated, such as d-spacing (dhkl), crystallite size (D), microstrain (ε), and dislocation density (δ). The transmittance and reflectance spectra were analyzed to evaluate the linear optical, optoelectrical, dispersion, and nonlinear optical properties. Their values were increased as the CAS thin films were annealed for 1–3 h, and then decreased for 4–5 h. The resistance with temperature for the CAS thin films was measured by a two-probe method and obtained results in the range of ∼108–1010 Ω. The results show that the CAS thin films exhibit static dissipative behavior for the annealing times of 1–2 h, but reach an antistatic material state for the annealing time of 3 h. In addition, the hot-probe method was used to investigate the majority of carriers in the thin films. A negative voltage was shown and indicated the p-type properties for the synthesized CAS thin films.

Effect of substrate temperature on properties of co-evaporated copper antimony sulfide thin films

In recent years, a wide variety of copper based chalcogenides have been investigated to address the need of sustainable photovoltaic materials. The ternary chalcostibite copper antimony sulfide (CuSbS2) is an emerging semiconductor in photovoltaics, optoelectronic devices and energy storage applications due its suitable band gap, high absorption coefficient and environment friendly nature. CuSbS2 thin films were deposited on glass substrates using the co-evaporation method at various substrate temperatures. The films are characterized by X-ray diffractometer, UV–Vis-NIR spectroscopy and Hall-effect measurement to study the impact of substrate temperature on structural, optical and electrical properties. The Photoresponse measurements were carried out for all films under the solar simulator. The composition of the films was confirmed using Energy dispersive X-ray spectroscopy analysis. The valance states of the constituent elements were found by X-ray photoelectron spectroscopy analysis. The energy band gap values of CuSbS2 films are in the range of 1.58–1.70 eV. All films are photoconductive and show p-type conductivity. The present studies confirm that CuSbS2 can be a potential absorber layer in thin film solar cells.

Copper antimony sulfide thin films for visible to near infrared photodetector applications.

Ternary chalcostibite copper antimony sulfide (CuSbS2) is an emerging semiconductor material having applications in photovoltaics, energy storage and optoelectronics due to its high absorption coefficient, suitable bandgap, and it consists of non-toxic and earth abundant elements. CuSbS2 thin films are prepared by combining chemical bath deposition (antimony sulfide (Sb2S3)) and thermal evaporation (copper (Cu)) followed by a heat treatment and their application as visible to near infrared photodetectors is reported. Crystalline structure, elemental composition, chemical state, morphology and optoelectronic properties of the films were characterized by various techniques. The effect of three different Cu thicknesses (CAS 20, CAS 30 and CAS 40 nm) on the photodetection properties are evaluated under illumination using light emitting diodes (LEDs) and a laser. The photodetectors fabricated are successfully tested under different wavelengths, power densities and applied voltage and their photoresponse cyclic stability for each wavelength of illumination was recorded. From the sensitivity calculations, the sample with 20 nm Cu thickness (CAS 20) showed higher detection sensitivity for visible to near infrared wavelengths. Better responsivity results were obtained for CAS 40 because of its improved crystallinity and phase purity. Photodetector properties such as sensitivity and responsivity are evaluated for all the samples. These results are beneficial for cost effective and environment friendly photodetectors and optoelectronic devices based on CuSbS2 thin films.

Structural, optical and electrical properties of copper antimony sulfide thin films grown by a citrate-assisted single chemical bath deposition

Copper antimony sulfide (CAS) has been proposed as low toxicity and earth abundant absorber materials for thin film photovoltaics due to their suitable optical band gap, high absorption coefficient and p-type electrical conductivity. The present work reports the formation of copper antimony sulfide by chemical bath deposition using sodium citrate as a complexing agent. We show that by tuning the annealing condition, one can obtain either chalcostibite or tetrahedrite phase. However, the main challenge was co-deposition of copper and antimony as ternary sulfides from a single chemical bath due to the distinct chemical behavior of these metals. The as-deposited films were subjected to several trials of thermal treatment using different temperatures and time to find the optimized annealing condition. The films were characterized by different techniques including Raman spectroscopy, X-ray diffraction (XRD), profilometer, scanning electron microscopy (SEM), UV–vis spectrophotometer, and Hall Effect measurements. The results show that the formation of chalcostibite and tetrahedrite phases is highly sensitive to annealing conditions. The electrical properties obtained for the chalcostibite films varied as the annealing temperature increases from 280 to 350°C: hole concentration (n)=1017–1018cm−3, resistivity (ρ)=1.74–2.14Ωcm and carrier mobility (μ)=4.7–9.26cm2/Vseg. While for the tetrahedrite films, the electrical properties were n=5×1019cm−3, μ=18.24cm2/Vseg, and ρ=5.8×10−3Ωcm. A possible mechanism for the formation of ternary copper antimony sulfide has also been proposed.

Effect of substrate temperature on copper antimony sulphide thin films from thermal evaporation

Copper antimony Sulfide (CAS) thin films were deposited on glass substrate using thermal evaporation technique at different substrate temperatures. Using CuCl2.2H2O, SbCl3 and thiourea as parental materials, the evaporant source material was synthesized by solvothermal method. Moreover, phase identification using X-Ray diffraction was made after the removal of by-products. The CuSbS2 bulk material was pelletized using hydraulic press and used as a target material for developing CAS films on glass substrate with different substrate temperatures such as, Room Temperature (without substrate temperature), 100 °C, 200 °C, 300 °C and 400 °C. The source material and the deposited CAS films were subjected to X-ray diffraction analysis, Raman spectroscopy, Transmission Electron Microscopy, Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photo Electron Spectroscopy, Energy Dispersive X-ray Spectral analysis and UV–Vis Spectroscopy. Hall Effect measurement was carried out to investigate, whether the CAS films exhibits p-type conductivity. The deposited films were found to have the band gap in the range of 2.18 eV and 1.62 eV.

Progress in development of copper antimony sulfide thin films as an alternative material for solar energy harvesting

The increasing energy demand and the limitations of the existing technologies due to the scarcity, cost and toxicity of the materials urge the researchers to hunt for efficient thin film solar cells based on earth-abundant, inexpensive and less toxic materials. For a decade, binary and ternary antimony based sulfides have gained attention due to their possible applications in solar cells. This interest is the basis of this review. In this review article, we describe basic properties of copper antimony sulfide (CuSbS2) thin films to investigate their photovoltaic applications. A detailed description of the preparation methods, studies on morphologies and optoelectronic properties based on published work, including our experience are presented. A systematic review is done to demonstrate emerging interest in the photovoltaic performance of this compound. This review gives an in depth discussion on the structure, morphology, optical and electrical properties of copper antimony sulfide thin films.

Structural, optical and charge generation properties of chalcostibite and tetrahedrite copper antimony sulfide thin films prepared from metal xanthates.

Herein, we report on a solution based approach for the preparation of thin films of copper antimony sulfide, an emerging absorber material for third generation solar cells. In this work, copper and antimony xanthates are used as precursor materials for the formation of two different copper antimony sulfide phases: chalcostibite (CuSbS2) and tetrahedrite (Cu12Sb4S13). Both phases were thoroughly investigated regarding their structural and optical properties. Moreover, thin films of chalcostibite and tetrahedrite were prepared on mesoporous TiO2 layers and photoinduced charge transfer in these metal sulfide/TiO2 heterojunctions was studied via transient absorption spectroscopy. Photoinduced charge transfer was detected in both the chalcostibite as well as the tetrahedrite sample, which is an essential property in view of applying these materials as light-harvesting agents in semiconductor sensitized solar cells.

Enhanced Photoelectrochemical Response from Copper Antimony Zinc Sulfide Thin Films on Transparent Conducting Electrode

Copper antimony sulfide (CAS) is a relatively new class of sustainable absorber material, utilizing cost effective and abundant elements. Band gap engineered, modified CAS thin films were synthesized using electrodeposition and elevated temperature sulfurization approach. A testing analog of copper zinc antimony sulfide (CZAS) film-electrolyte interface was created in order to evaluate photoelectrochemical performance of the thin film of absorber materials. Eu3+/Eu2+redox couple was selected for this purpose, based on its relative band offset with copper antimony sulfide. It was observed that zinc has a significant effect on CAS film properties. An enhanced photocurrent was observed for CAS film, modified with zinc addition. A detailed investigation has been carried out by changing stoichiometry, and corresponding surface and optical characterization results have been evaluated. A summary of favorable processing parameters of the films showing enhanced photoelectrochemical response is presented.