AbstractAntimony selenide (Sb2Se3) has great potential as a light‐absorbing layer in thin‐film photovoltaics because of its excellent photoelectric properties and superior stability. Presently, high‐efficiency Sb2Se3 solar cells use a heterojunction consisting of a p‐type Sb2Se3 absorber and an n‐type CdS layer. The power conversion efficiency (PCE) of Sb2Se3 solar cells is restricted by the low carrier concentration in the CdS layer, complex intrinsic deep defects of Sb2Se3, and unsuitable energy level band alignment in the junction. This paper presents a copper (Cu) doping strategy that achieves a synergistic doping effect, enabling controllable doping in both the n‐type CdS layer and p‐type Sb2Se3 absorber. First, proper Cu doping significantly enhances the short‐wavelength transmittance of CdS films and increases their n‐type carrier concentration. The Vbi in the CdS/Sb2Se3 heterojunction improves from 521 to 751 mV. Second, a post‐annealing process is performed to facilitate Cu diffusion from the CdS layer to the Sb2Se3 absorber. This approach successfully passivates intrinsic deep defect E2 and reduces the interfacial trap‐assisted nonradiative recombination losses. As a result, the Cu‐doped Sb2Se3/CdS solar cell presents a PCE of 10.23%, representing a 40% enhancement in PCE compared to the undoped CdS/Sb2Se3 heterojunction device.
Read full abstract