We have fabricated a new multi-channel polycrystalline silicon thin film transistor (ploy-Si TFT), of which structure may be more effectively hydrogenated than conventional multi-channel poly-Si TFTs. The new multi-channel TFT has stripe-cuts in the gate electrode so that more hydrogen radicals penetrate into the gate oxide and passivate the active poly-Si layer effectively. The electrical characteristics, such as threshold voltage and field effect mobility, are improved significantly compared with those of conventional multi-channel device after 90-min hydrogenation. Besides the improvement of the device characteristics, our experimental results show that the dominant hydrogenation mechanism in the poly-Si TFT is the diffusion through the gate oxide.