This work presents the microstructure and electrical properties of MnO-doped SnO2–Zn2SnO4 ceramic composites prepared through conventional ceramic processing. Scanning electron microscopy images reveal that all samples have a compact structure. With increasing MnO content, the grains grow larger and the grain boundaries become unsharp. Energy dispersive spectroscopy results for the sample doped with 0.1 mol% MnO indicate that Mn distributes randomly on the grain surfaces. X-ray diffraction patterns exhibit that all the samples are composed of SnO2 and Zn2SnO4, and the relative intensity of the diffraction peak for Zn2SnO4 increases with increasing MnO content. The relations between the electric field and current density show that all the samples have varistor properties. For the samples doped with 0.2 and 0.3 mol% MnO, the breakdown electric field is so large that it exceeds the measuring range of the instrument, whereas the relative permittivity is as low as about 30 at 100 Hz. In the electric modulus spectra, two sets of relaxation peaks were observed and the corresponding activation energies are enhanced greatly by doping MnO. The effect of MnO on the microstructure and electrical properties indicates that the space charges trapped by oxygen vacancies are the origin of the great permittivity and varistor properties for SnO2–Zn2SnO4 ceramic composites.