Graphene multilayers with flat moiré minibands can exhibit the quantized anomalous Hall effect due to the combined influence of spontaneous valley polarization and topologically nontrivial valley-projected bands. The sign of the Hall effect in these Chern insulators can be reversed either by applying an external magnetic field, or by driving a transport current through the system. We propose a current-driven mechanism whereby reversal occurs along lines in the (current I, magnetic-field B) control parameter space with slope dI/dB=(e/h)MA_{M}(1-γ^{2})/γ, where M is the magnetization, A_{M} is the moiré unit cell area, and γ<1 is the ratio of the chemical potential difference between valleys along a domain wall to the electrical bias eV.