To improve the tradeoff relationship between the specific on-resistance (R on,sp) and breakdown voltage (BV), a novel lateral double-diffusion metal-oxide-semiconductor field effect transistor (LDMOSFET) with an ingenious layout design is proposed and investigated by simulations and experiments. The proposed LDMOS features a specific convex-shape field plate (CFP) structure at source side and two separated integrated diodes (SID) at the drain side. On one hand, a continuous electron accumulation layer is formed from source to drain in the on-state, providing an ultralow current path to decrease the R on,sp. On the other hand, the CFP and SID structures allow the proposed device to make full use of the drift length to sustain the off-state voltage, so that the novel device could maintain the same BV level with a shortened drift length. Thus, the proposed CFP–SID LDMOS achieves a much lower R on,sp and better R on,sp–BV tradeoff relationship. The experimental results illustrate that the CFP–SID LDMOS realizes a BV of 518 V and R on,sp of 23.5 mΩ·cm2 with a high figure of merit (FOM) of 11.42 MW cm−2. Compared with the triple-RESURF LDMOS under the same BV, the proposed device decreases the R on,sp by 53.8%.
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