Continuous Czochralski Growth Research Articles

The effects on heat and oxygen transport of different heat shield and sidewall insulation designs during continuous Czochralski silicon crystal growth

Numerical work has been done to optimize the hot zone for the continuous Czochralski growth of 8-inch diameter silicon crystals using a double-crucible system. Thicker insulation layers on a high-heel-shaped heat shield and the sidewall insulation led to a reduction in the heater power of more than 40%, a decrease in the oxygen content, and a significant flattening of the growth interface. This design also allowed a stronger argon gas flow near the outer free melt surface and the quartz crucible wall, which prevented the generation of an argon gas vortex in this area. Stronger flow of argon gas would assist in moving more SiO gas and dust out of the chamber. However, the reduction in the outer melt temperature compared to the original design could slow down the melting of the silicon granules.

Effects of different crucible shapes on heat and oxygen transport during continuous Czochralski silicon crystal growth

The effects of different quartz crucible geometries on continuous Czochralski growth of 8-inch silicon crystals in a double-crucible system are investigated. The numerical results show that a design in which the bottom and the side walls of the crucible are flat lowers the oxygen content, saves energy, and weakens the melt flow turbulence. Moreover, the lowest von Mises thermal stress in the crucible system was obtained with this crucible design. The flat crucible side wall reduces heat loss from the outer melt surface, facilitating heat transfer from the side heater into the melt. The differences in crucible geometry change the temperature distribution and flow pattern in the outer melt but have an insignificant effect on the deflection of the crystal-melt interface.

Full-scale experiments on solid-pellets feed continuous Czochralski growth of silicon crystals

Two long-term solid-pellets feed continuous Czochralski growth experiments were performed in an industrial Czochralski crystal puller as an extension to our previous work [7]. The goals of these experiments were to examine how polysilicon pellets would melt in a standard Cz system, to discover the thermal effects the pellets would have on the overall melt, and to find if pellet addition could be an effective melt replenishment technique. These experiments demonstrate that the quality of the melt for the CCz growth is based heavily on the surface temperature of the melt. A novel characterization method (“impact severity”) is developed to characterize the quality of the CCz melt. Stable feed rate and melt conditions were achieved for three different pull rates. These experiments demonstrate that the process is technically feasible, and can be retrofitted to the existing industrial systems. Several critical issues that need to be addressed to develop a successful CCz process are also discussed.

Oscillatory convection in low aspect ratio Czochralski melts

Modeling of the crucible in bulk crystal growth simulations as a right circular cylinder may be adequate for high aspect ratio melts but this may be unrealistic when the melt height is low. Low melt height is a unique feature of a solid feed continuous Czochralski growth process for silicon single crystals currently under investigation. At low melt heights, the crucible bottom curvature has a dampening effect on the buoyancy-induced oscillations, a source of inhomogeneities in the grown crystal. The numerical results demonstrate how the mode of convection changes from vertical wall-dominated recirculating flows to Benard convection as the aspect ratio is lowered. This phenomenon is strongly dependent on the boundary condition at the free surface of the melt, which has been generally considered to be either adiabatic or radiatively cooled. A comparison of the flow oscillations in crucibles with and without curved bottoms at aspect ratios in the range of 0.25 to 0.50, and at realistic Grashof numbers (10 7 < Gr < 10 8) illustrate that changing the shape of the crucible may be an effective means of suppressing oscillations and controlling the melt flow.

Numerical and experimental study of a solid pellet feed continuous Czochralski growth process for silicon single crystals

A polysilicon pellets (≅1 mm diameter) feed continuous Czochralski (CCZ) growth process for silicon single crystals is proposed and investigated. Experiments in an industrial puller (14–18 inch diameter crucible) successfully demonstrate the feasibility of this process. The advantages of the proposed scheme are: a steady state growth process, a low aspect ratio melt, uniformity of heat addition and a growth apparatus with single crucible and no baffle(s). The addition of dopant with the solid charge will allow a better control of oxygen concentration leading to crystals of uniform properties and better quality. This paper presents theoretical results on melting of fully and partially immersed silicon spheres and numerical solutions on temperature and flow fields in low aspect ration melts with and without the addition of solid pellets. The theoretical and experimental results obtained thus far show a great promise for the proposed scheme.