Abstract
Numerical work has been done to optimize the hot zone for the continuous Czochralski growth of 8-inch diameter silicon crystals using a double-crucible system. Thicker insulation layers on a high-heel-shaped heat shield and the sidewall insulation led to a reduction in the heater power of more than 40%, a decrease in the oxygen content, and a significant flattening of the growth interface. This design also allowed a stronger argon gas flow near the outer free melt surface and the quartz crucible wall, which prevented the generation of an argon gas vortex in this area. Stronger flow of argon gas would assist in moving more SiO gas and dust out of the chamber. However, the reduction in the outer melt temperature compared to the original design could slow down the melting of the silicon granules.
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