Ge Content Research Articles

Tracing fluid signature and metal mobility in complex orogens: insights from Pb-Zn mineralization in the Pyrenean Axial Zone

AbstractOrogenic processes encompass a complex interplay of deformation and metamorphic events, which can impact the formation of ore deposits to various degrees. However, distinguishing fluid signatures from orogenic versus post-orogenic events presents a significant challenge due to the scarcity of robust geochemical indicators that remain unaffected during multiple post-mineral reworking events. This study carefully examines the properties and chemistry of primary and secondary fluid inclusions (FIs), identifying distinct signatures of two fluid populations linked to different styles of Pb-Zn mineralization in the Pyrenean Axial Zone (PAZ) of Southern-France/Northern-Iberia: These included late-Carboniferous stratabound epigenetic Pb-Zn deposits and Mesozoic crosscutting Pb-Zn(-Ge) vein systems. Population (I) is identified in primary and secondary FIs in a few crosscutting Pb-Zn veins and constitutes a minor component in stratabound epigenetic bodies. It exhibits Na-dominated low to intermediate salinity (< 20 wt% NaCl eq.), intermediate temperatures (200–350 °C), abundant CO2-rich FIs and shows low homogeneous Cl/Br molar ratios. These characteristics are consistent with a metamorphic origin of the fluids, associated with Late-Variscan metamorphism. Population (II) is commonly observed in the crosscutting vein systems where it occurs as primary and pseudosecondary FIs, as well as in stratabound epigenetic bodies where it represents the main fluid component of secondary FIs. Population (II) is Ca-dominated with intermediate to high salinity (15–35 wt% NaCl eq.), relatively low temperature (< 200 °C), and shows high Cl/Br molar ratios with significant variations. This last characteristic is typical of mixing of at least two fluids, one with a probable low Cl/Br molar ratio at shallow crustal levels and another with high Cl/Br molar ratio at deeper levels. Characteristics of population (II) are consistent with a fluid of basinal origin that interacted with the basement while circulating in the Pyrenees during the Mesozoic, although a Pyrenean-Alpine age cannot be excluded. Locally, in sphalerite-hosted secondary FIs that form trails in the crosscutting veins, we find evidence of high Ge concentrations (up to few 1000s ppm), which correlate with anomalous Pb and Tl concentrations. Very high metal concentrations (up to 1–2 wt% Pb, Zn), which are inversely proportional to Cl/Br molar ratios, are found in FIs mainly within veins hosted in deep-seated high-grade metamorphic rocks. Based on a compilation of fluid data from the literature, a first-order correlation can be deduced between the metamorphic grade of the rocks hosting the mineralization and the Pb and Zn content in the FIs. Early stratabound orebodies are considered likely sources of metal for the development of the late crosscutting vein mineralization. This study demonstrates the significance and complexity of orogen-scale fluid circulation and supports the importance of pre-existing metal enrichment in the crust, especially in high-grade metamorphic rocks as a prerequisite for the formation of Pb-Zn veins in complex multi-stage orogens.

Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si

AbstractThe explosion of artificial intelligence, the possible end of Moore's law, dawn of quantum computing, and the continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on group III‐V platforms have long‐powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. A paradigm‐shifting solution requires exploring new and unconventional materials and integration approaches. In this work, it is shown that a sub‐10‐nm ultra‐thin Si1−xGex buffer layer fabricated by an oxidative solid‐phase epitaxy process can facilitate extraordinarily efficient strain relaxation. The Si1−xGex layer is formed by ion implanting Ge into Si(111) and selectively oxidizing Si atoms in the resulting ion‐damaged layer, precipitating a fully strain‐relaxed Ge‐rich layer between the Si substrate and surface oxide. The efficient strain relaxation results from the high oxidation temperature, producing a periodic network of dislocations at the substrate interface, coinciding with modulations of the Ge content in the Si1−xGex layer and indicating the presence of defect‐mediated diffusion of Si through the layer. The epitaxial growth of high‐quality GaAs is demonstrated on this ultra‐thin Si1−xGex layer, demonstrating a promising new pathway for integrating III‐V lasers directly on the Si platform.

Structure and Electronic Properties of the A‐center in Si1−xGex Alloys: Insight from the Heyd–Scuseria–Ernzerhof Hybrid Functional Calculations

This study investigates the structure and electronic properties of the A‐center in Si1−xGex alloys (x = 0, 0.25, 0.50, 0.75, and 1), using the Heyd–Scuseria–Ernzerhof hybrid functional. It is found that the most stable structures form SiOSi bonds, with the other two atoms surrounding the A‐center being Ge atoms, which form a long bond between them. The behavior of the O atoms is significantly influenced by the Ge content. As it increases, the position of the O atom shifts relative to the surrounding atoms, thereby affecting the bond lengths and angles. The formation energy of the A‐center first decreases with increasing Ge content up to 0.75, which enhances the defect production; however, then it decreases from 0.75 to 1, thus suppressing defect production. The calculations are consistent with the experimental data, showing that the distance of the defect level from the conduction band minimum increases with Ge content, supporting the observed enthalpy changes in electron ionization.

Structural order and disorder within novel antiferromagnetic RCrxGa3-yGey and R4Cr1-xGa12-yGey intermetallic compounds (R = Tb, Dy)

Single crystals of intermetallic phases RCrxGa3−yGey (R = Tb, Dy; x = 0.19–0.23, y = 0–0.4) and R4Cr1−xGa12−yGey (R = Tb, Dy; x = 0–0.13, y = 3–4) were grown from Ga flux ensuring the absence of magnetic impurities. The X-ray diffraction experiments revealed that the compounds belong to the family of filled AuCu3-type gallides. The compounds are formed upon the insertion of Cr atoms into E6 octahedral voids (E = Ga/Ge), which can occur in either disordered (RCrxGa3-yGey) or ordered (R4Cr1-xGa12-yGey) fashion. The unique feature of the obtained compounds is the strong correlation between the level of Ge doping and the Cr concentration in the phases, which allows one to control both the structural and magnetic ordering. At low Ge concentration, the cubic RCrxGa3-yGey phases form, which then experience tetragonal distortion upon the increase in the Ge content, and the cubic R4Cr1-xGa12-yGey 2×2×2 superstructures are formed at even higher Ge concentrations. The X-ray diffraction analysis also showed a presence of structural defects in the phases, which are caused by different size of empty E6 and filled CrE6 octahedra. Magnetic measurements of the single crystals of the cubic phases reveal antiferromagnetic ordering of the rare earth sublattice with the Neel temperatures decreasing upon Ge doping from 22 K for RCrxGa3 to 10 K for R4Cr1−xGa12−yGey. The Ge doping causes gradual decrease in the strength of antiferromagnetic R-R interactions ultimately leading to noncollinear magnetic structure in the superstructure R4Cr1−xGa12−yGey phases.

Comparison of 35 trace elements content in malignant breast tumors with their content in the normal female mammary gland: Original data and a mini-review

Objective: In many countries, including Russia, breast cancer ranks first in the incidence of cancers in women. The etiology of this disease remains largely unclear, but there is evidence indicating that disturbances in the somatic homeostasis of trace elements may be involved in the process of oncogenesis. Therefore, this study was aimed at identifying changes in the content of trace elements during malignant transformation of breast tissue.Methods: For this purpose, an effective method of small sample analysis by means of inductively coupled plasma mass spectrometry was developed. The method makes it possible to determine the content of 35 trace elements in microsamples (with mass ≥ 10 mg) of breast tissue obtained by puncture biopsy. With the help of this technique, the samples of cancerous (n = 43) and normal (n = 38) breast tissue were studied.Results: In malignant breast tissue, the content of Al, As, B, Cd, Co, Cs, Cu, Mg, Mn, Mo, Ni, Rb, Se, Sr, Ti, Tl, U, V, Zn, and Zr was higher, while the content of Ge, Pb, Sb and Th was lower than in healthy gland tissue. All the identified differences were statistically significant.Conclusions: The significant disruption of somatic homeostasis of trace elements resulting from malignant transformation of breast tissue has been described, but its cause has not been determined, so additional research is required. Further the method we employ, which we have developed and described here, requires tissue samples weighing only a few milligrams, so it is possible to use it with tissue obtained from puncture tissue biopsies.

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence.

We investigate the nanoheteroepitaxy of SiGe and Ge quantum dots (QDs) grown on nanotips substrates realized in Si(001) wafers. Due to the lattice strain compliance, enabled by the nanometric size of the tip and the limited dot/substrate interface area, which helps to reduce dot/substrate interdiffusion, the strain and SiGe composition in the QDs could be decoupled. This demonstrates a key advantage of the nanoheteroepitaxy over the Stranski-Krastanow growth mechanism. Nearly semi-spherical, defect-free, ∼100 nm wide SiGe QDs with different Ge contents were successfully grown on the nanotips with high selectivity and size uniformity. On the dots, thin dielectric capping layers were deposited, improving the optical properties by the passivation of surface states. Intense photoluminescence was measured from all samples investigated with emission energy, intensity, and spectral linewidth dependent on the SiGe composition of the QDs and the different capping layers. Radiative recombination occurs in the QDs, and its energy matches the results of band-structure calculations that consider strain compliance between the QD and the tip. The nanotips arrangement and the selective growth of QDs allow to studying the PL emission from only 3-4 QDs, demonstrating a bright emission and the possibility of selective addressing. These findings will support the design of optoelectronic devices based on CMOS-compatible emitters.

Semi-quantitative μLIBS mapping of germanium diffusion between metal and silicate during planetary core–mantle segregation

Understanding the distribution of elements between the cores and mantles of planetary bodies is essential for elucidating the geological and geochemical processes operating during their formation. Because the semi-metallic element Ge shows complex siderophile, chalcophile, and lithophile properties, it is particularly significant for investigating core–mantle segregation and ore deposit formation. Recent advancements in in situ microanalysis techniques, such as μLIBS, have enabled high-resolution elemental mapping of Ge and other trace elements.This study explores the application of μLIBS imaging to investigate the high-temperature/high-pressure distribution of Ge between metallic and silicate matrices analogous to planetary cores and mantles. By cross-calibrating the μLIBS intensities with electron microprobe profile analyses carried out on piston cylinder experimental samples, we produced semi-quantitative Ge maps from which we extracted Ge concentration profiles to assess Ge diffusion from the silicate to the metal. We determined, for the first time, the diffusion coefficient of Ge between metal and silicate to be D(Ge)metal = 4.03E−13 ± 3.6E−14 m2/s at 1 GPa and 1350 °C. Our results demonstrate the capability and efficiency of μLIBS for providing detailed, high-resolution (15 μm) trace element concentration data at few ppm levels, offering a time- and cost-effective alternative to conventional techniques.These findings bring insights on planetesimal differentiation and on chemical exchanges between metal and silicate phases in a magma ocean and between two different metal phases occurring at the bottom of the magma ocean during planetesimal formation.

Advanced SiGe:B Raised Sources and Drains for p-type FD-SOI MOSFETs

We have evaluated the feasability of selectively growing, with a chlorinated chemistry, 20 to 30 nm thick SiGe:B Raised Sources and Drains with Ge concentration gradients (from 50% down to 20%-30%, typically) on each side of FD-SOI transistors. The motivation was twofold: (i) inject meaningful amounts of compressive strain in the channel of p-type MOS devices thanks to high Ge concentrations in layers sitting in the same plane than Si or SiGe channels and (ii) benefit from lower Ge concentration SiGe layers on top that are easier to germano-silicide. Growing a thin Si(:B) cap on SiGe:B otherwise yields more uniform and stable contacts. We have thus studied the Si capping of SiGe 20% or 30% layers. As growth has to be conducted, for Si, at temperatures significantly higher than that of SiGe (750°C, to be compared with 700°C for SiGe 20% and 650°C for SiGe 30%, typically), we have quantified the impact of using temperature ramping-ups with SiH2Cl2 + HCl flowing into the growing chamber. The purpose of such active ramps was to prevent elastic strain relaxation, e.g. the formation of SiGe surface undulations that would happen with temperature ramps under H2 only.

(Keynote) Epitaxial Si/SiGe Multi-Stacks: From Stacked Nano-Sheet to Fork-Sheet and CFET Devices

After a short description of the evolution of metal-oxide-semiconductor (MOS) device architectures and the corresponding requirements on epitaxial growth processes, the manuscript describes the material properties of complicated Si/SiGe multi-layer stacks used for complementary field effect transistor (CFET) devices. They contain two different Ge concentrations and have been grown using conventional process gases. A relatively high growth temperature is used to obtain acceptable Si and SiGe growth rates. Still island growth has been suppressed for Ge concentrations up to 40%. Excellent structural and optical material properties of the Si/SiGe multi-layer stack will be reported, with up to 3 + 3 Si channels in the top and bottom part of the stack, respectively. The absence/presence of lattice defects has been verified by room temperature photoluminescence measurements. Photoluminescence measurements at low temperatures are used to study band-to-band luminescence from individual sub-layers and to illustrate the optical material quality of the CFET stack.

Polycrystalline inclusion-free growth of thick, lattice-matched SiGeC with high substitutional Carbon concentrations up to 2%

Lattice-matched SiGeC with ~20% of Ge was grown at 550°C, 10 Torr on a 300 mm Si substrate in an industrial standard Reduced Pressure Chemical Vapor Deposition reactor using commercially available Si2H6/GeH4/SiH3CH3 precursors. Thicknesses exceeding 250 nm resulted in cluster formation in SiGeC with [C]Sub~2.0% and [C]Int~0.4%, with a surface density up to 6.13x106 µm-2. Room temperature photoluminescence measurements showed that the clusters were non-radiative defects and Transmission Electron Microscopy, using the ASTAR system, proved they were polycrystalline with random orientation. Cluster-free growth was achieved for 1 µm thick SiGeC with [C]Sub~1.0% and no interstitial carbon atoms, however, without lattice-matched growth on a Si substrate. Injecting HCl during a co-flow process resulted in a smooth surface with a RMS roughness of 0.23 nm and a reduction of [C]Intfrom ~0.7% down to ~0.1%, close to the detection limit of X-ray Photoelectron Spectroscopy at 0.1%. This led to a significant cluster surface density reduction down to 1.15x104 µm-2. The injection of HCl caused an increase in the Ge concentration from 19.7% up to 28.9% and a non-lattice-matched growth. A Cyclic Deposition Etch (CDE) process resulted in no [C]Int reduction, but significantly reduced the cluster surface density down to 4.60x104 µm-2. CDE-grown SiGeC was lattice-matched to the Si substrate and yielded a smooth surface with a RMS roughness of 0.22 nm. This enabled the growth of high crystalline quality, thick, lattice-matched layers on a 300 mm Si substrate with material properties beyond pure Si.

Defect-Free SiGe/Si Multistacks for Next-Generation CFET Architectures

The advancement of CMOS technology nodes demands increasingly complex device architectures. In this frame, the epitaxial deposition of complicated SiGe/Si multistacks presents a significant technology challenge required to enable such cutting-edge devices. This work presents the characterization of defect-free multistacks featuring SiGe layers with two possible Ge concentrations and incorporating either two or six stacked Si nanosheets. Our comprehensive analysis reveals good matching with the nominal structures and demonstrates remarkable repeatability of the Si channels. Furthermore, the multistacks exhibit ideal surface morphology, crucial for subsequent processing steps. Notably, the study also highlights optimal wafer-to-wafer repeatability, a key factor in ensuring consistent performance across large-scale production.

An Assessment of the Lateral Selective Etching, with HCl, of High Versus Low Ge Content SiGe Layers

We have evaluated the feasibility of selectively etching, with gaseous HCl, high versus low Ge content SiGe layers. To that end, we have grown {20 to 25 nm thick Si / ~ 12-15 nm thick Si0.8Ge0.2 or Si0.75Ge0.25 / ~ 11-14 nm thick Si0.5Ge0.5} multilayers on SOI substrates. After a low temperature capping with SiN, such stacks were patterned into regular arrays of square mesas or lines with a stop on the buried oxide, to laterally etch the layers of interest. We first determined, at 500°C, 600 Torr, the (001) blanket HCl etch rates of SiGe 30% and 40%: 1.4 and 5.3 nm min.-1. We then switched over to patterned wafers. The lateral selective etching of Si0.5Ge0.5 versus Si0.8Ge0.2 (and Si) was feasible and the following features highlighted: (i) Si0.5Ge0.5 lateral etch rates along the <110> directions were much smaller than in the vertical [001] direction and (ii) because of micro-loading, lateral etch rates were definitely higher for squares than for lines (0.9-1.1 nm min.-1 for lines, to be compared with 1.7–2.1 nm min.-1 for squares). Meanwhile, the lateral selective etching of Si0.5Ge0.5 versus Si0.75Ge0.25 was far from being perfect, with much higher Si0.5Ge0.5 etch rates and a significant Si0.75Ge0.25 recessing at tunnel entrances. Si0.75Ge0.25 floors and ceilings were otherwise far more etched and thus tilted than Si0.8Ge0.2 ones. Inserting very thin Si spacers between Si0.5Ge0.5 cores and Si0.75Ge0.25 claddings partly solved those issues, with no recessing and lesser etchings at the entry points of tunnels.

Piezo Electric Properties of Epitaxial SiGe

Piezo resistivity of B- and P-doped epitaxial Si1-xGex (x=10-30%) is investigated to assess its application potential for thin film strain sensors. The gauge factor (GF) is calculated based on the change in resistivity to the externally induced compressive uniaxial strain along the current flow direction. In the case of B-doped SiGe, the resistivity decreases under the induced compressive strain which may be related to hole mobility enhancement, while no influence on the resistivity of the P-doped SiGe. A significant increase in the GF is observed by lowering B concentration. At the same B concentration, slightly higher GF is observed for higher Ge content. Moreover, the GF is slightly improved by lowering the SiGe growth temperature. The slight improvement may be related to improved crystallinity. These results suggest that the low-doped p-type SiGe deposited at low temperature has reasonable GF and can potentially be applied in strain sensors.

Influence of Ga-Ge doping on the structural and electrical properties of Li7La3Zr2O12 solid electrolytes

In order to replace the conventional liquid electrolytes by solid electrolytes, high room temperature ionic conductivity is required. To achieve such high ionic conductivity, the series Li7-3xGaxLa3Zr1.9Ge0.1O12 was prepared by solid-state reaction method. The content of Ge was kept constant at 0.10 atoms per formula unit (a.p.f.u), and the Ga has been varied from 0 to 0.40 a.p.f.u. The conducting cubic phase was identified using X-ray diffraction study, whereas the physical and structural studies were performed using density measurements and scanning electron microscopy (SEM) analysis, respectively. Electrical conductivity results revealed that the 0.20 Ga ceramic sample possessed the highest room temperature Li ion conductivity of 5.09 × 10-4 S/cm with minimum activation energy of 0.25 eV. The high room temperature ionic conductivity makes the 0.20 Ga ceramic sample a suitable solid electrolyte for all-solid-state lithium-ion batteries (ASSLIBs).

Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope-Purified Silicon Quantum Wells.

Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope concentration depth profiles in a SiGe/28Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry down to their respective limits of isotope concentrations and depth resolution. Spin-echo dephasing times and valley energy splittings EVS around have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing toward the suppression of qubit decoherence through hyperfine interaction with crystal host nuclear spins or via scattering between valley states. The concentration of nuclear spin-carrying 29Si is 50 ± 20ppm in the 28Si QW. The resolution limits of APT allow to uncover that both the SiGe/28Si and the 28Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment, representative of the thermal budget experienced by the heterostructure during qubit device processing, broadens the top SiGe/28Si QW interface by about two monolayers, while the width of the bottom 28Si/SiGe interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of % in the QW, resulting from segregation, is instrumental for the observed large . Minimal Ge additions <1%, which get more likely in thin QWs, will hence support high EVS without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubitproperties.

Low-temperature epitaxial SiGe:P for gate-all-around n-channel metal-oxide-semiconductor devices

This study investigates the viability of Si1−x Ge x :P (x ≤ 0.3) as a novel source/drain material for n-channel Metal-Oxide-Semiconductor for Gate-All-Around (GAA) transistors, addressing the challenges posed by the evolving semiconductor technology. Utilizing a reduced-pressure chemical vapor deposition system, undoped SiGe with low Ge contents were grown at temperatures of ≤500 °C. The addition and optimization of phosphorous doping using phosphine results in improved surface morphology and increased active carrier concentration. The study compares Si1−x Ge x :P with different silicon precursors and temperatures, emphasizing the potential for maintaining high growth rates at lower temperatures when using Si3H8. Ti/Si1−x Ge x :P stacks reveal a promising reduction in contact resistivity with decreasing the Ge content, particularly when incorporating thin Si:P cap layers at the Ti/Si1−x Ge x :P interface. This comprehensive study highlights the potential of Si1−x Ge x :P as an alternative material for advanced GAA transistor technologies, offering improved mobility and meeting the thermal budget requirements.

A preliminary investigation into the potential of Ge-enhanced Cu2SnS3 (CTS) thin-film applications for water-splitting photoelectrodes

This study explores the potential of Ge-enhanced Cu2SnS3 (CTS) thin-films as photoelectrode materials for water splitting grown through a simple sulfurization process. The addition of Ge to CTS enabled tuning the bandgap and improved the photocurrent density. Films sulfurized at 520 °C exhibit enhanced grain size and reduced grain boundaries, which contribute to increased carrier transport efficiency. By optimizing Ge content and sulfurization conditions, the Cu2(Sn1−x ,Ge x )S3 films demonstrate promising capabilities for efficient green hydrogen production. This work lays the groundwork for developing advanced photoelectrodes and highlights the need for further refinement to maximize performance for practical applications.

Germanium distribution in Mississippi Valley-Type systems from sulfide deposition to oxidative weathering: A perspective from Fule Pb-Zn(-Ge) deposit, South China

Abstract Germanium (Ge) is a critical raw material for emerging high-tech and green industries, resulting in considerable recent interest in understanding its distribution and geochemical behavior in ore deposits. In this contribution, the distribution of Ge and related trace elements in the Fule Pb-Zn(-Ge) deposit, South China, is investigated to reveal the distribution of Ge in the hydrothermal ores and during sulfide weathering, using multiple microanalytical techniques, including scanning electron microscopy, electron probe microanalysis and laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS). In the Fule MVT deposit, sphalerite (ZnS) is the most significant Ge-carrier relative to other sulfides, though the five recognized textural types of sphalerite display progressive depletion in Ge from the first sphalerite generation to the late one. In the early stage, sphalerite with fine-grained chalcopyrite inclusions has the highest Ge concentrations, probably accounting for a significant proportion of the total Ge. We interpret that high Ge concentrations in the early sphalerite may be attributable to high Cu activity in the mineralizing fluids. During oxidative weathering, Ge was redistributed from its original host, sphalerite, to the weathering product willemite (Zn2SiO4) rather than smithsonite (ZnCO3), with high levels of Ge (up to 448 μg/g) present in the willemite. The formation of abundant willemite largely prevents the dispersion of Ge during weathering. In principle, willemite-hosted Ge should be fully recoverable, and the Zn-silicate ores may, therefore, be a potential target to meet future demand. This study provides new information on how Ge behaves from sulfide- to weathering-stage in MVT systems, which directly impacts Ge mobility and deportment changes and the development of metal-lurgical strategies for Ge recovery.

Realizing the Direct Synthesis of High Silica IWS Zeolite with Improved Hydrothermal Stability.

Direct synthesis of germanosilicate zeolites with low Ge content and improved hydrothermal stability is a great challenge. Herein, we successfully achieve the direct synthesis of IWS zeolite with a Si/Ge ratio higher than 4 for the first time. High silica IWS zeolites can be prepared in a wide range of Si/Ge ratios (4-16) by utilizing bulky 1,3-bis(1-adamantyl)-imidazolium (BAdaI+) as an efficient organic structure-directing agent from the concentrated synthesis gel under fluoride conditions. It is proven by a series of characterizations that Ge atoms preferentially occupy the double-four-ring (D4R) units. Theoretical calculations reveal the preferential interactions of guest organic structure-directing agents (OSDAs) and host IWS zeolites with different Si/Ge ratios. The introduction of more Ge atoms cannot improve the host-guest interaction when the BAdaI+ molecule is accommodated within the nanopores of IWS zeolite compared to other OSDAs. The obtained IWS zeolite shows an extremely high specific surface area (905 m2/g) and pore volume (1.31 cm3/g). Due to the low Ge content, IWS zeolite exhibits outstanding hydrothermal stability and experiences high temperature steam heating with no loss of crystallinity and only a slight loss of microporosity.

Understanding the Thermodynamics of Si and Ge Concentration Variation in SiGeSn Nanowires

Understanding the Thermodynamics of Si and Ge Concentration Variation in SiGeSn Nanowires