Traps cause accumulation of space charge near injecting contacts, due to which there is band bending in the vicinity of contacts. This leads to a lowering of voltage at which there is change from diffusion to drift dominated current under steady state, termed as transition voltage (Vα). We propose a technique to qualitatively understand the trap distribution by analyzing the Vα of a two terminal perovskite device. The validity of the proposed technique has been verified from the numerical simulations carried out using Sentaurus TCAD. Both density (NT) and energetic depth (ET) of traps were varied to study their effect on Vα. Devices with deeper and higher NT have been found to exhibit stronger band bending and thus lower Vα. In addition, Vα has been found to be sensitive to NT even when band bending due to accumulated ions or uncompensated dopants near interfaces is significant. This dependence has been further illustrated for a perovskite solar cell device. It has been concluded that Vα can be advantageous over VOC in optimizing perovskite film for trap-free solar cell. The availability of different methods to extract Vα from current–voltage (J–V) characteristics, and the extra sensitivity of Vα to NT paves a way to study traps effectively.