We have investigated semi-classical carrier transport at the heterodimensional contact between a three-dimensional (3D)-metal and two-dimensional (2D)-semiconductor system. Formulated for easy inclusion in numerical device simulators, current density boundary conditions for the heterodimensional contact are theoretically derived for both electrons and holes. Unlike conventional metal-semiconductor-metal (MSM) photodetectors, in which planar surface electrodes are fabricated to establish contact with the semiconductor, a novel MSM device is considered by utilizing recessed electrodes that directly contact the 2D-quantum well. The newly derived current density boundary conditions have been incorporated in a commercial numerical device simulator to investigate the steady-state and transient behavior of a novel quantum-well MSM photodetector. Results for devices with 1-μm electrode spacing at 2 V DC bias indicate a nominal 3-dB bandwidth of 25 GHz and low dark currents in the quantum well of the order of a few femto-amps.