This paper reports the dielectric behaviour and electrical conduction properties of Y6-xBa4Ybx(SiO4)6O2 (YBaSiO: xYb) compounds. The Scanning Electron Microscopy (SEM) was utilized to obtain the surface microstructure of the compound. The micrographs showed both the circular and elongated shape of grains and their random distribution. The Fourier Transform Infrared Spectroscopy (FTIR) was used to confirm the presence of bond formations in the compounds. From the spectra, it was observed that the peaks at 690 cm−1 and a band from 850 cm−1 to 998 cm−1 are due to the stretching frequency of Y-O molecules and Si-O molecules, respectively. The peak centred at 1464 cm−1 is of vibration modes of Ba2+ions. These peaks confirmed the formation of oxy-apatite compounds. Both the dielectric permittivity and dielectric loss, decreases with increasing values of frequency due to reduction in the polarization effects on the higher side of frequency. This is because the dipole orientation lags with the rapidly reversing alternating current (ac) field. The value of dielectric loss was found to range between, 0 – 3.5 in frequency ∼ 100 Hz and 0 – 0.5 in frequency ∼ 100,000 Hz, up to temperature 500 °C. The impedance value decreases and hence a. c. conductivity increases, at higher frequencies. The increment in ac values followed the universal power law. The Nyquist plot showed that the area under the curves reduces and hence indicates negative temperature coefficient of resistance i.e., NTCR behaviour of compounds. The obtained results suggest the utilization of compound in electrical devices as power loss component, solid oxide fuel cells, and capacitors etc.