The molecular structure of triphenylsilane has been investigated by gas-phase electron diffraction and theoretical calculations. The electron diffraction intensities from a previous study (Rozsondai B, Hargittai I, J Organomet Chem 334:269, 1987) have been reanalyzed using geometrical constraints and initial values of vibrational amplitudes from calculations. The free molecule has a chiral, propeller-like equilibrium conformation of C3 symmetry, with a twist angle of the phenyl groups τ = 39° ± 3°; the two enantiomeric conformers easily interconvert via three possible pathways. The low-frequency vibrational modes indicate that the three phenyl groups undergo large-amplitude torsional and out-of-plane bending vibrations about their respective Si–C bonds. Least-squares refinement of a model accounting for the bending vibrations gives the following bond distances and angles with estimated total errors: rg(Si–C) = 1.874 ± 0.004 A, 〈rg(C–C)〉 = 1.402 ± 0.003 A, 〈rg(C–H)〉 = 1.102 ± 0.003 A, and ∠aC–Si–H = 108.6° ± 0.4°. Electron diffraction studies and MO calculations show that the lengths of the Si–C bonds in H4−nSiPhn molecules (n = 1–4) increase gradually with n, due to π → σ*(Si–C) delocalization. They also show that the mean lengths of the ring C–C bonds are about 0.003 A larger than in unsubstituted benzene, due to a one hundredth angstrom lengthening of the Cipso–Cortho bonds caused by silicon substitution. A small increase of r(Si–H) and decrease of the ipso angle with increasing number of phenyl groups is also revealed by the calculations.
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