Conduction Mechanism Research Articles

A Ternary Inverter Based on Hybrid Conduction Mechanism of Band-to-Band Tunneling and Drift-Diffusion Process.

In this paper, a novel transistor based on a hybrid conduction mechanism of band-to-band tunneling and drift-diffusion is proposed and investigated with the aid of TCAD tools. Besides the on and off states, the proposed device presents an additional intermediate state between the on and off states. Based on the tri-state behavior of the proposed TDFET (tunneling and drift-diffusion field-effect transistor), a ternary inverter is designed and its operation principle is studied in detail. It was found that this device achieves ternary logic with only two components, and its structure is simple. In addition, the influence of the supply voltage and the key device parameters are also investigated.

Influence of nano-crystallization on Li-ion conductivity in glass Li$$_3$$PS$$_4$$: a molecular dynamics study

AbstractUnderstanding the ionic conduction mechanisms in solid electrolyte glasses and glass-ceramics is an important task for improving the performance of next-generation all-solid-state batteries. Although many ionic conduction mechanisms have been proposed, the mechanism of increased ionic conductivity in partially crystallized glass is not fully understood. In this study, molecular dynamics was used to analyze the strain and local ion mobility in the glass around the crystal nano-particles of Li$$_3$$ 3 PS$$_4$$ 4 , which is a promising material for solid electrolytes. From the analysis of the results, we find that a local strain field is generated around the crystal particles and that the tensile strain field decreases the activation energy of ion migration and increases the ionic conductivity. This study opens the possibility of improving the ionic conductivity of glass-ceramics by controlling crystallization and dispersing the tensile strain field, even though the crystalline phase is not a high ionic conducting phase.

Tailoring the electrical and magneto-electric transport properties of ZnO films via Ti ion implantation

A significant development toward semiconductor-based electronic devices is based on the electric and magneto-electric control of the transport properties of the charge carriers. This study unprecedentedly investigates the Ti implantation and thereafter the effect of structural defects on the electrical and magneto-electric transport properties of Ti-implanted RF-sputtered ZnO thin films. Theoretical stopping and range of ions in matter simulations along with the experimental structural and elemental studies reveal that Ti ion implantation generates a significant amount of oxygen vacancy (VO) defects apart from Ti-related impurities in post-implantation annealed films. The film implanted with 8 × 1015 ions/cm2 (TZO815) exhibits the lowest resistivity (4.68 × 10−3 Ω cm) and the highest carrier concentration (6.61 × 1020 cm−3) values. Resistivity measurements over a temperature range of 5-300K indicate semiconducting behavior for all the films implanted up to fluences of 5 × 1015 ions/cm2 identified with a grain boundary dominated thermally activated band, nearest neighbor hopping, and Mott and Efros–Shklovskii (ES) variable range hopping conduction mechanisms at various temperature intervals. Notably, the gradual decrease in both Mott and ES hopping ranges following Ti implantation indicates the formation of more localized states. Interestingly, the TZO815 film exhibits metal-semiconductor transition around 220 K, suggesting the formation of a degenerate band within the ZnO conduction band upon Ti implantation. Remarkably, the magnetoresistance results align with a semiempirical formula proposed by Khosla and Fischer, indicating that a negative magneto resistance in the TZO thin films is attributed to the spin-dependent scattering of conduction electrons by the localized magnetic moments induced mainly by the implantation induced VO defects.

Transient N-GQDs/PVA nanocomposite thin film for memristor application

In recent years quantum dot (QDs) based resistive switching devices(memristors) have gained a lot of attention. Here we report the resistive switching behavior of nitrogen-doped graphene quantum dots/Polyvinyl alcohol (N-GQDs/PVA) degradable nanocomposite thin film with different weight percentages (wt.%) of N-GQDs. The memristor device was fabricated by a simple spin coating technique. It was found that 1 wt% N-GQDs/PVA device shows a prominent resistive switching phenomenon with good cyclic stability, high on/off ratio of ~102 and retention time of ∼104 s. From a detailed experimental study of band structure, we conclude that memristive behavior originates from the space charge controlled conduction (SCLC) mechanism. Further transient property of built memristive device was studied. Within three minutes of being submerged in distilled water, the fabricated memory device was destroyed. This phenomenon facilitates the usage of fabricated memristor devices to develop memory devices for military and security purposes.

High Conductivity and Diffusion Mechanism of Oxide Ions in Triple Fluorite-Like Layers of Oxyhalides.

Oxide ion conductors are attractive materials because of their wide range of applications, such as solid oxide fuel cells. Oxide ion conduction in oxyhalides (compounds containing both oxide ions and halide ions) is rare. In the present work, we found that Sillén oxychlorides, Bi2-xTexLuO4+x/2Cl (x = 0, 0.1, and 0.2), show high oxide ion conductivity. The bulk conductivity of Bi1.9Te0.1LuO4.05Cl reaches 10-2 S cm-1 at 431 °C, which is much lower than 644 °C of yttria-stabilized zirconia (YSZ) and 534 °C of La0.8Sr0.2Ga0.83Mg0.17O2.815 (LSGM). Thanks to the low activation energy, Bi1.9Te0.1LuO4.05Cl exhibits a high bulk conductivity of 1.5 × 10-3 S cm-1 even at a low temperature of 310 °C, which is 204 times higher than that of YSZ. The low activation energy is attributed to the interstitialcy oxide ion diffusion in the triple fluorite-like layer, as evidenced by neutron diffraction experiments (Rietveld and neutron scattering length density analyses), bond valence-based energy calculations, static DFT calculations, and ab initio molecular dynamics simulations. The electrical conductivity of Bi1.9Te0.1LuO4.05Cl is almost independent of the oxygen partial pressure from 10-18 to 10-4 atm at 431 °C, indicating the electrolyte domain. Bi1.9Te0.1LuO4.05Cl also exhibits high chemical stability under a CO2 flow and ambient air at 400 °C. The oxide ion conduction due to the two-dimensional interstitialcy diffusion is considered to be common in Sillén oxyhalides with triple fluorite-like layers, such as Bi1.9Te0.1RO4.05Cl (R = La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu) and Bi6-2xTe2xO8+xBr2 (x = 0.1, 0.5). The present study opens a new field of materials chemistry: oxide ion-conducting Sillén oxyhalides with triple fluorite-like layers.

Optoelectronic properties of fluorine and antimony-doped tin dioxide nanoparticles

Nano-sized tin dioxide SnO2 (TO) has garnered great potential for use in optoelectronic applications, gas sensors, and solar cell technology thanks to its unique properties. These properties can be further enhanced by altering dopants and crystallinity. To achieve these aims, we successfully synthesized nanoparticles of fluorine (F) and antimony (Sb) doped tin dioxide by using a modified sol-gel method. The synthesis process involved supercritical drying of ethyl alcohol. The effect of doping on TO sample microstructure, optical and electrical properties was studied, which is crucial to understanding its potential applications. The X-ray diffraction pattern reveals that the nanoparticles crystallized in the tetragonal rutile structure with a size varying from 22 to 25 nm depending on element doping. The structural analysis was further proved by Raman spectroscopy and FTIR investigations. The optical band gap energy decreases upon the doping, as evidenced by the Eg values of 3.88, 3.87, and 3.72 eV corresponding to, FTO, and ATO respectively. This result proves that our compounds are good candidates for optoelectronic applications. Further, the electrical properties proved the semiconductor behavior for all the samples. Its conductivity is thermally activated, with a decrease in activation energy observed upon the addition of dopants. Moreover, the temperature dependence of the exponents's’of the (ac) conductivity proves that the conduction mechanism varies with dopants. The decrease of s values for undoped and FTO samples revealed a dominant correlated barrier hopping, while the increase of ‘s’ for ATO confirmed the tunneling hopping mechanism. Furthermore, the representation of real and imaginary parts of impedance has also been analyzed. Thus, the obtained results open exciting opportunities for using these samples in many fields that foster the combination of optical and electrical properties.

Versatile Titanium Carbide MXene Thin-Film Memristors with Adaptive Learning Behavior.

With the advent of the modern era, there is a huge demand for memristor-based neuromorphic computing hardware to overcome the von Neumann bottleneck in traditional computers. Here, we have prepared two-dimensional titanium carbide (Ti3C2Tx) MXene following the conventional HF etching technique in solution. After confirmation of Ti3C2Tx properties by Raman scattering and crystallinity measurements, high-quality thin-film deposition is realized using an immiscible liquid-liquid interfacial growth technique. Following this, the memristor is fabricated by sandwiching a Ti3C2Tx layer with a thickness of 70 nm between two electrodes. Subsequently, current-voltage (I-V) characteristics are measured, revealing a nonvolatile resistive switching property characterized by a swift switching speed of 30 ns and an impressive current On/Off ratio of approximately 103. Furthermore, it exhibits endurance through 500 cycles and retains the states for at least 1 × 104 s without observable degradation. Additionally, it maintains a current On/Off ratio of about 102 while consuming only femtojoules (fJ) of electrical energy per reading. Systematic I-V results and conductive AFM-based current mapping image analysis are converged to support the electroforming mediated filamentary conduction mechanism. Furthermore, our Ti3C2Tx memristor was found to be truly versatile as an all-in-one device for demonstrating edge computation, logic gate operation, and classical conditioning of learning by the brain in Psychology.

Influence of Pr-cations on structural, spectral, elemental, and electrical features of Zr2–R type ferrites

Hexagonal ferrites have gained much attraction due to extensive applications in telecommunication and stealth fields. R-type hexagonal ferrites are rare hexagonal ferrites used in various technological applications. In the current work, the sol-gel auto-combustion method was used to prepare samples of R-type hexagonal ferrites with the chemical formula BaZr2Fe4-xPrxO11 (x = 0.00, 0.03, 0.06, and 0.09) respectively. The impact of substituting Praseodymium (Pr) on its structural, electrical, dielectric, and magnetic properties was investigated. X-ray diffraction (XRD) patterns suggest all samples exhibit a single phase. The lattice parameters and unit cell volume experienced alterations with varying Praseodymium (Pr3+) substitution levels. The atomic dynamics study of the Pr-doped R-type hexagonal ferrites was evaluated using FTIR analysis. Two absorption bands in the infrared spectroscopy were utilized to designate the tetrahedral and octahedral sites. X-ray photoelectron spectroscopy (XPS) findings verified the presence of all metal ions alongside their respective electronic states. Jonscher's power law elucidates the conduction mechanism of charge carriers in the synthesized ferrite samples. Impedance analysis was employed to investigate the influence of relaxation time and grain boundaries on the electrical characteristics of the fabricated nanomaterials. Impedance Cole-Cole plots provide evidence that all samples demonstrate multiple relaxation processes of a non-Debye nature. The minimum reflection loss (RL) of −32.46 dB at 3.27 GHz was achieved for x = 0.09. Pr-doped R-type hexagonal ferrite has potential applications in microwave high-frequency applications.

Transitions of electrical conduction mechanism in graphene flake van der Waals thin film

The electrical conduction mechanism in 2D van der Waals (vdW) thin film made of graphene flakes can be characterized by the variable range hopping (VRH) over a wide range of temperature, followed by a transition into an Arrhenius type conduction at the higher temperature. Regarding the nature of the subsequent Arrhenius type conduction, a lack of consensus exists between the nearest neighbor hopping (NNH) and the band conduction (BC). We discuss how to assess the transition in conduction mechanism based on the transient behavior of the reduced activation energy (W) and the structure of electronic density of states (DOS) of the sample. With a multi-channel conduction model, we show that the transition from VRH to BC always accompany an increase in W, which is absent in the transition from VRH to NNH. Also discussed are the peculiarities of VRH in vdW thin film and what they imply towards the properties of defects. In most vdW flake thin films, the spread of defect band in DOS is governed by the intrinsic defect energy not by the Coulomb interaction between defects. It can further be deduced that the gap in DOS near Fermi level associated with Efros-Shklovskii VRH observed in vdW film is not a Coulomb gap as found in weakly doped crystalline semiconductor, but inherent in the distribution of defect intrinsic energy. For the graphene flake thin film we synthesized, Mott VRH and BC are identified.

Nonvolatile behavior of resistive switching memory in Ag/WOx/TiOy/ITO device based on WOx/TiOy heterojunction

Two-terminal structure memristors are the most promising electronic devices that could play a significant role in artificial intelligence applications of the next generation and the post-Moore era. In this work, we fabricated the memristive device by depositing a heterojunction WOx/TiOy functional layer onto an indium tin oxide substrate using magnetron sputtering. The Ag/WOx/TiOy/ITO device exhibits improved memory behavior of bipolar resistive switching (RS) nonvolatile compared to TiOy-based single-layer memristors, enabling it to meet high-density information storage requirements. Moreover, our device exhibited the coexistence of the negative differential resistance effect and the behavior of the RS memory. Through a comprehensive analysis of conductivity on the curve of current–voltage (I–V), a physical model based on the mechanism of space charge-limited current, ohmic conduction, and Schottky emission was suggested to explain the behavior device RS memory. This study's findings demonstrate that including a heterojunction bilayer WOx/TiOy as a functional layer can significantly improve the performance of memristive devices. This advancement expands the potential application of ferroelectric metallic oxide heterojunctions within the field of memristors.

Optical and dielectric properties of divalent copper based double perovskite compound, Gd2CuTiO6

In this work, we have investigated high temperature dielectric properties and room temperature optical properties on rare earth ion based orthorhombic Gd2CuTiO6 (GCTO). Optical properties like reflectance and band gap were determined from ultra-violet visible (UV–Vis) diffuse reflectance spectroscopy technique and photoluminescence (PL) spectrum. The compound exhibited substantial optical absorption and emission in the visible region. Our findings reveal the presence of an intermediate band, as evidenced by the difference between the band gap values obtained from the Tauc plot using the diffuse reflectance spectrum (3.07 eV) and the PL spectrum (2.4 eV). Furthermore, thermogravimetric analysis demonstrated high thermal stability with <0.4% change in mass over a wide temperature range of 30 °C–1200 °C in air environment. Moreover, lead-halide free compound, GCTO is highly thermally stable oxide double perovskite with wide band gap and absorption in the UV–Vis range are highly suitable for optical applications In addition, dielectric properties of the compound have been examined using impedance spectroscopy as a function of frequency ranging from 500 Hz to 1 MHz and temperature between 300 K and 550 K. Compounds with relaxor behaviour at high temperatures and high thermal stability are desired for several applications. Because of the cation disorders present in this compound, GCTO displays dielectric relaxor behaviour indicative of a distribution of relaxation times. Furthermore, the frequency-dependent modulus illustrated a thermally activated conduction mechanism. Cole–Cole plots of electrical modulus suggest prominent grain contribution above 350 K.

Temperature dependent dielectric relaxation and current conduction mechanism in Ba and Ti co-doped bismuth ferrite ceramic

Temperature dependent dielectric relaxation and current conduction mechanism in Ba and Ti co-doped bismuth ferrite ceramic

Influence of design and annealing parameters on measurements of AC properties of NiFe-SiO2 multilayer structures

In this article, due to the exceptionally interesting electrical and magnetic properties of nanocomposites, which include ferromagnetic materials in a dielectric matrix, multilayer NiFe-SiO2 nanocomposites were obtained. The entire sequence of technological processes using magnetron sputtering equipment in the presence of argon was presented, the aim of which was to create structures with different numbers and thicknesses of layers, as well as in two measurement configurations. Measurements of AC electrical properties were carried out in a variable temperature range, i.e. from room temperature to 373 K, using the 4-point method. The obtained measurement results were compared in terms of design parameters, such as thickness and number of layers, as well as technological parameters, such as heating duration. Structural analysis was performed using scanning electron microscopy (SEM) to investigate the effect of oxidation on the multilayer structures and to confirm the granular structure of the nanocomposite. Additionally, the chemical composition of the obtained multilayers was examined using Energy-dispersive X-ray spectroscopy (EDX). Resistive parameters were tested in the range of magnetic field induction from 0 T to 0.3 T. Based on the conductivity relationships, it was proven that a hopping mechanism of current conduction occurs in the tested samples. Using the frequency dependencies of the phase shift angle, it is possible to adjust the equivalent RC electronic circuit, thereby determining the potential application of the tested materials.

Thermal bridging effect enhancing heat transport across graphene interfaces with pinhole defects

Interfacial thermal conductance (G) is of critical significance to the efficient thermal management of two-dimensional (2D) material devices. Despite the importance of defects engineering in tuning G, the mechanisms of heat transport across defective graphene interfaces remain unclear. In this study, we have identified and demonstrated the origins of the enhanced heat transport across pinhole defective graphene through our ultrafast pump-probe measurements and molecular dynamics (MD) simulations. In prior work, the enhanced G across defective graphene interfaces was commonly attributed to the improved overlap of phonon density of states (DOS) or interfacial coupling strength. We, however, observe a remarkable 2.5-fold increase in heat conduction and a distinctly different temperature dependence of G for defective graphene with the same superstrate and substrate material, compared to pristine graphene. In contrast, interfaces with different superstrate and substrate materials show only minor changes (<15%) in thermal conductance after introducing defects in the graphene layer. Through careful analysis of our MD simulations for various defective graphene interfaces, we conclude that, contradictory to common beliefs, it is the formation of direct contact thermal bridge, instead of the improvement in the phonon DOS overlap or interfacial coupling strength, that has a decisive effect and promotes heat transport across defective graphene interfaces. The differing impacts of the thermal bridge on G of defective graphene sandwiched by layers of the same and different materials are primarily attributed to the varying coupling strength between the substrate and superstrate. Our work provides important insights and physical understandings of the mechanisms of heat conduction across defective graphene interfaces.

Interesting UV and visible photodetection properties of GZO‐based device

AbstractThe aim of this study is to investigate the performance of chemically deposited Ga doped ZnO (GZO) thin film for enhanced UV and visible light detection. Transparent thin film was grown on glass substrates by a spray pyrolysis technique. The Ga doping concentration was maintained at 1 at.% in the solution. The influence of gallium concentration in zinc oxide (ZnO) films on structural, morphological, electrical, and optical properties was studied.Measurements of the photoconductivity were performed by DC electrical tool under visible and UV illuminations. Obtained results reported in this study on the performances of the fabricated GZO based device reveal that the photoresponse, rapidity, photosensivity, responsivity, detectivity, and reproducibility of the device are very interesting in photodetection, especially in UV wavelength domain. We notice that the device has a good responsivity as compared to detectors fabricated using other techniques, with a rather good repeatability. Furthermore, the electronic conductivity mechanism is modeled as an ohmic one.

The relationship between health insurance and economic performance: an empirical study based on meta-analysis.

Health insurance stands as a pivotal facet of social wellbeing, with profound implications for the overarching landscape of economic development. The existing research, however, lacks consensus on the relationship between health insurance and economic performance and provides no evidence about the magnitude of the correlation. This lack of information seriously impedes the high-quality development of the healthcare system. Therefore, to scientifically elucidate the relationship between the two, this study involved a meta-analysis, analyzing 479 effect values derived from 34 independent research samples. The results reveal a strongly positive correlation between health insurance and economic performance [r = 0.429, 95% CI = (0.381, 0.475)]. Findings show that health insurance in developed countries more effectively fosters economic performance than in developing countries. Moreover, public health insurance exerts a stronger promoting effect on economic performance than commercial health insurance. The relationship between health insurance and economic performance is moderated by data type, research method, country of sample origin, literature type, journal impact factor, publication year, type of health insurance, and the research populations. Based on meta-analysis, this study not only scientifically responds to the controversy of the relationship between health insurance and economic performance, and the magnitude of a correlation, but also further reveals the inner conduction mechanism between the two. Our research findings are meaningful for policymakers to choose an appropriate healthcare strategy according to their unique attributes, propelling sustainable economic development.

Investigating the phase diagram-ionic conductivity isotherm relationship in aqueous solutions of common acids: hydrochloric, nitric, sulfuric and phosphoric acid

The relationship between phase diagram features around the solid–liquid equilibrium region and ionic conductivity in aqueous solutions is not well understood over the whole concentration range as is the case for acidic aqueous solutions. In this work, we have studied the ionic conductivity (κ) as a function of molar fraction (x) and temperature (T) for four acid/water solutions namely, monoprotic hydrochloric acid (HCl) and nitric acid (HNO3), diprotic sulfuric acid (H2SO4) and triprotic phosphoric acid (H3PO4) along with their binary phase diagrams. The connection between the main features of the phase diagrams and the trends in the ionic conductivity isotherms is established with a new insight on the two pertinent dominant conductivity mechanisms (hopping and vehicular). Ionic conductivity at different temperatures were collected from literature and fitted to reported isothermal (κ vs. x) and iso-compositional (κ vs. T) equations along with a novel semi-empirical equation (κ = f (x, T)) for diprotic and triprotic acids. This equation not only has the best fit for acids with different valency; but also contains four parameters, less than any other similar equation in literature. This work is one of few that advances the understanding of the intricate relationship between structure and ionic transport in various acidic aqueous solutions.

Examining the effects of sintering temperature on double perovskite La2NiTiO6: Analysis of structural, optical, electrical properties, and leakage current characteristics

This study explores the influence of varying sintering temperatures on the structural, optical, electrical, and leakage current features of La2NiTiO6 (LNTO), a double perovskite material synthesized through the citrate auto-ignition method. The X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and energy dispersive X-ray (EDX) analysis were employed to investigate the structure, microstructure, and compositional distribution of the samples. The samples sintered at various temperatures showed the monoclinic structure with space group P21/n and were confirmed by Rietveld's refinement of the XRD patterns. The average grain size increased with higher sintering temperatures, which is consistent with the particle size estimated from the histogram plot of the FE-SEM data. The UV–visible (UV–Vis) spectroscopy showed that the energy band gap decreased as sintering temperatures increased. Impedance spectroscopy analysis revealed non-Debye type relaxation of charge carriers and confirmed the negative temperature coefficient of resistance (NTCR) behavior. Electrical analysis affirmed that the direct current (DC) conductivity is thermally activated, following the Arrhenius equation with an inverse temperature dependency. As the sintering temperature increases, the leakage current density decreases, and the leakage current conforms to the ohmic conduction mechanism.

Yttrium ion influence on the structural, electrical, dielectric, and magnetic properties of α-Fe2O3 nanoparticles synthesized via Sol-Gel method

In this study, pure and Y3+ substituted Hematite (α-Fe2O3) nanostructure with various compositions, α-Fe2-xYxO3 (x = 0.00, 0.02, 0.05, 0.08 & 0.10), synthesized by using the Sol-Gel method. The X-ray diffraction (XRD) patterns of both pure and Y-substituted α-Fe2O3 samples revealed a rhombohedral phase with the R3¯c space group, having crystallite sizes ranging from 23 to 48 nm. Moreover, the XRD findings align closely with Raman observations. The variation in grain size observed via FE-SEM correlates well with the crystallite size and strain determined by XRD measurements. The resistivity plots exhibited two distinct regions corresponding to two different conduction mechanisms. Analysis of the resistivity data suggests the presence of variable range hopping and nearest-neighbour hopping conduction mechanisms within temperature ranges of 100 K to 300 K and 300 K to 400 K, respectively. The dielectric and magnetic properties exhibit a fluctuating behaviour with the increasing concentration of the Y3+ doping. We observed a shift towards weakly ferromagnetic conduct-like behaviour with the introduction of Y3+ into the hematite nanostructures.

Study on the photothermal conversion enhancement performance and application of the metal-polyphenol phase-change microcapsules modified by molybdenum disulfide

Aiming to improving photothermal conversion and heat storage efficiency, layered molybdenum disulfide (MoS2) was prepared with hydrothermal method, which was used as the thermally conductive and photothermal conversion material to modify metal-polyphenol (MPN) /paraffin (PA) microcapsules. The fabricated phase-change microcapsules (MoS2/MPN@PA-MEPCM) exhibits excellent thermal conductivity, photothermal conversion and heat storage performance. The effect of the additive amount of MoS2 on the leakage performance, microstructure, thermal conductivity, heat storage capacity, thermal stability and photothermal conversion performance of MoS2/MPN@PA-MEPCM was investigated. Furthermore, the enhancement mechanisms of the thermal conductivity and photothermal conversion were analyzed. The results show that when the additive amount of MoS2 is 10 wt%, the phase-change enthalpy of MoS2/MPN@PA-MEPCM reaches 127.1 J/g with an encapsulation ratio of 53.74 %. Compared to MPN@PA-MEPCM, the thermal conductivity of MoS2/MPN@PA-MEPCM increases by 88.45 % and the photothermal conversion and heat storage efficiency reaches 90.78 %. When the solar radiation intensity is 800 W/m2 and 1000 W/m2, the thermal efficiency of PFPSC is 57.17 % and 59.45 % respectively, which is higher than that of FPSC. The operation time of PFPSC is extended by 2435 s and 2750 s, respectively, improving the operational stability of flat plate solar water heaters. The developed microcapsules in this study demonstrate significant potential for highly efficient solar energy utilization and thermal energy storage in the fields of seawater desalination, solar water heating system and building heating.