In the realm of progression of internet of things, artificial intelligence and cloud services, nonvolatile memory devices such as, resistive random access memory (RRAM) emulated the vision of building internet of everything. In this study, robustness of homo- (Ag–Ag, and Pt–Pt), and hetero- (Ag–Pt) top, and bottom electrodes material without and with incorporated oxygen vacancies (Vos) in Sr4Ti4O12 RS layer were investigated. Presence of conductivity in the absence of external electric field proves the presence of nonvolatile memory behavior. Observed RS behavior (in the range of a few Angstroms) may be used to resolve the scalability issue of the proposed RRAM device system. At the same time, oxygen vacancies (Vos) introduced additional functionalities like: additional reduction sites, and reduction of leakage current by quantizing the conduction within RS material. Diffusion barrier elucidated the diffusion mechanism of oxygen vacancies in the considered heterostructure to understand the energy state and the type of RS conduction mechanism. Potential energy line ups, formation energy and electronic properties identified the Vos as principal sites for reduction of Ag atoms by forming metal oxide (Ag-Vos) complex. It is predicted that ReSET, and hence high resistance state (HRS) is harder to achieve with homo-electrodes. The findings of this study provides the effective solution to scalability, stability, and low power consumption in the realm of Pt–Sr4Ti4O12–Ag (with 2Vos mediated in RS layer) based RRAM devices.
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