Conductivity Of Thin Films Research Articles

High laser fluence ITO coatings utilizing a Fabry-Perot thin film filter to reduce effective absorption.

Laser-induced damage threshold of transparent conductors, such as Indium Tin Oxide (ITO), is limited by their high optical absorption due to free carriers. However, the effective absorption of a transparent conductor thin film can be reduced by an order of magnitude, without changing the electrical characteristics of the film, when placed in a low electric field section of a multilayer coating. A Fabry-Perot thin film interference filter has both high transmittance and low electric field positions, so it is an ideal thin film structure for this application. Although Fabry-Perot interference filters are not known as particularly high laser-induced damage resistant coatings due to their resonant characteristics, a laser-induced damage threshold (LIDT) improvement of up to 8× was observed with this technique compared to single layer ITO coatings fabricated using either radio frequency magnetron sputtering or electron-beam deposition. Additionally, an approximately 4× LIDT improvement for a Fabry-Perot interference filter has been observed by the addition of ITO into the multilayer structure.

Highly Conductive Carbon-Based Thin Films Produced by Low-Energy Electron Irradiation

Highly Conductive Carbon-Based Thin Films Produced by Low-Energy Electron Irradiation

Oxidative MLD of Conductive PEDOT Thin Films with EDOT and ReCl5 as Precursors.

Because of its high conductivity and intrinsic stability, poly(3,4-ethylenedioxythiophene (PEDOT) has gained great attention both in academic research and industry over the years. In this study, we used the oxidative molecular layer deposition (oMLD) technique to deposit PEDOT from 3,4-ethylenedioxythiophene (EDOT) and a new inorganic oxidizing agent, rhenium pentachloride (ReCl5). We extensively characterized the properties of the films by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy (XPS), energy-dispersive X-ray spectroscopy (EDS), Raman, and conductivity measurements. The oMLD of polymers is based on the sequential adsorption of the monomer and its oxidation-induced polymerization. However, oMLD has been scarcely used because of the challenge of finding a suitable combination of volatile, reactive, and stable organic monomers applicable at high temperatures. ReCl5 showed promising properties in oMLD because it has high thermal stability and high oxidizing ability for EDOT. PEDOT films were deposited at temperatures of 125–200 °C. EDS and XPS measurements showed that the as-deposited films contained residues of rhenium and chlorine, which could be removed by rinsing the films with deionized water. The polymer films were transparent in the visible region and showed relatively high electrical conductivities within the 2–2000 S cm–1 range.

고효율 Perovskite/Si 탠덤형 태양전지 적용을 위한 In₂O₃:ZnO 투명전도박막

Indium-based transparent conductive thin films are used in various opto-electric devices. In particular, the In2O3:ZnO (IZO) thin film exhibits a high electrical conductivity and high transmittance despite deposition at a low temperature of less than 100℃. IZO thin film has the advantage of being free from damage caused by heat even compared to the existing ITO thin film. In this study, we investigated the requirements for use of TCO films in silicon-based solar cells and the best alternative TCO materials to improve their efficiency. Moreover, we discussed the current status of high-efficiency solar cells using low-temperature TCO films.

N, P-Codoped Carbon Film Derived from Phosphazenes and Its Printing Integration with a Polymer Carpet Via "Molecular Welding" for Flexible Electronics.

Although high-performance graphene-based micro/nano flexible electronic devices have shown promising applications in numerous fields, there are still many problems in converting graphene into practical applications. Heteroatom-doped graphene materials are of huge importance because heteroatom doping can significantly change the electronic structure and introduce the active site, which benefits the integration with a promising substrate and achieves nondestructive transfer of carbon materials. Herein, we analyze in detail the pyrolysis gas composition of heteroatom-enriched phosphazenes with different structures and prepare a series of high-quality in situ N, P-codoped carbon-based films from phosphazene solid sources on a low-cost glass substrate by a convenient one-step method. The N, P-codoped carbon film shows reflectivity, good conductivity, and transparency. In addition, with the help of in situ "molecular welding", we achieve nondestructive transfer of a conductive carbon-based film from a glass substrate to promising layer-polyimide (PI) and prepare a flexible free-standing carbon/PI hybrid film with an excellent binding interface. The flexible conductive hybrid film shows excellent durability under an extremely low temperature environment and superior bending stability after 800 bending cycles. The results suggest that a phosphazene precursor is an amazing choice for constructing high-quality heteroatom-doped conductive carbon films. Besides, this work provides a promising way for nondestructive transfer of the conductive carbon-based films and large-scale preparation of large-area patterned conductive thin films.

Electrically conductive silicon oxycarbide thin films prepared from preceramic polymers

AbstractThis work focuses on silicon oxycarbide thin film preparation and characterization. The Taguchi method of experimental design was used to optimize the process of film deposition. The prepared ceramic thin films with a thickness of c. 500 nm were characterized concerning their morphology, composition, and electrical properties. The molecular structure of the preceramic polymers used for the preparation of the ceramic thin films as well as the thermomechanical properties of the resulting SiOC significantly influenced the quality of the ceramic films. Thus, an increase in the content of carbon was found beneficial for the preparation of crack‐free thin films. The obtained ceramic films exhibited increased electrical conductivity as compared to monolithic SiOC of similar chemical composition. This was shown to correlate with the unique hierarchical microstructure of the SiOC films, which contain large oxygen‐depleted particles, mainly consisting of highly graphitized carbon and SiC, homogeneously dispersed in an oxygen‐containing amorphous matrix. The matrix was shown to also contain free carbon and to contribute to charge carrier transport between the highly conductive large particles. The ceramic thin films possess electrical conductivities in the range from 5.4 to 8.8 S/cm and may be suitable for implementation in miniaturized piezoresistive strain gauges.

Superior ionic conduction in LiAlO2 thin-film enabled by triply coordinated nitrogen

Developing a highly Li+-conductive thin-film electrolyte remains a challenge for the application of all-solid-state thin-film batteries. This paper reports an N-doped LiAlO2 glassy thin-film with high ionic conductivities prepared by reactive sputtering under an N2 atmosphere after the pattern of the gold standard LiPON thin-film solid electrolyte. The resulting Li+-conductive thin-film is dense without cracks and shows good adhesion to substrates. The doped N partially substitutes O and yields a triple coordination structure in the thin-films, which leads to an enhancement of ionic conductivity up to 3 orders of magnitude compared to pristine LiAlO2. On one hand, the triply coordinated nitrogen facilitates the formation of a cross-linked network and provides continuous pathways for Li+ transport. On the other hand, the triply coordinated nitrogen could provide additional hopping sites for Li+, which have a relatively weak bonding force to Li+ than O. This gives rise to an N-doped LiAlO2 thin-film with an ionic conductivity of 3.99 × 10−6 S/cm at room temperature. To the best of our knowledge, this is one of the highest ionic conductivities ever reported for LiPON-like thin-film solid electrolytes.

Multi-Point Flexible Temperature Sensor Array and Thermoelectric Generator Made from Copper-Coated Textiles.

The integration of electrical functionality into flexible textile structures requires the development of new concepts for flexible conductive material. Conductive and flexible thin films can be generated on non-conductive textile materials by electroless metal deposition. By electroless copper deposition on lyocell-type cellulose fabrics, thin conductive layers with a thickness of approximately 260 nm were prepared. The total copper content of a textile fabric was analyzed to be 147 mg per g of fabric, so that the textile character of the material remains unchanged, which includes, for example, the flexibility and bendability. The flexible material could be used to manufacture a thermoelectric sensor array and generator. This approach enables the formation of a sensor textile with a large number of individual sensors and, at the same time, a reduction in the number of electrical connections, since the conductive textile serves as a common conductive line for all sensors. In combination with aluminum, thermoelectric coefficients of 3–4 µV/K were obtained, which are comparable with copper/aluminum foil and bulk material. Thermoelectric generators, consisting of six junctions using the same material combinations, led to electric output voltages of 0.4 mV for both setups at a temperature difference of 71 K. The results demonstrate the potential of electroless deposition for the production of thin-film-coated flexible textiles, and represent a key technology to achieve the direct integration of electrical sensors and conductors in non-conductive material.

Deep-Ultraviolet Transparent Conductive MWCNT/SiO2 Composite Thin Film Fabricated by UV Irradiation at Ambient Temperature onto Spin-Coated Molecular Precursor Film.

Deep-ultraviolet (DUV) light-transparent conductive composite thin films, consisting of dispersed multiwalled carbon nanotubes (MWCNTs) and SiO2 matrix composites, were fabricated on a quartz glass substrate. Transparent and well-adhered amorphous thin films, with a thickness of 220 nm, were obtained by weak ultraviolet (UV) irradiation (4 mW cm−2 at 254 nm) for more than 6 h at 20−40 °C onto the precursor films, which were obtained by spin coating with a mixed solution of MWCNT in water and Si(IV) complex in ethanol. The electrical resistivity of MWCNT/SiO2 composite thin film is 0.7 Ω·cm, and transmittance in the wavelength region from DUV to visible light is higher than 80%. The MWCNT/SiO2 composite thin film showed scratch resistance at pencil hardness of 8H. Importantly, the resistivity of the MWCNT/SiO2 composite thin film was maintained at the original level even after heat treatment at 500 °C for 1 h. It was observed that the heat treatment of the composite thin film improved durability against both aqueous solutions involving a strong acid (HCl) and a strong base (NaOH).

Realization of high transparent conductive vanadium-doped zinc oxide thin films onto flexible PEN substrates by RF-magnetron sputtering using nanopowders targets

RF-magnetron sputtering has been carried out at room temperature to deposit vanadium-doped zinc oxide (VZO) nanostructured thin films onto flexible PEN substrates. The sputtering targets of compacted VZO nanopowder have been prepared using a rapid and inexpensive Sol-Gel synthesis followed by a supercritical drying process. Structural and morphological study of VZO particles in the targets has been carried out via X-ray diffraction and Transmission Electron Microscopy (TEM). The nanostructured thin films have been characterized to analyze the structural, morphological, electrical and optical properties as a function of vanadium content from 0 to 4 at.%. Structural characterization of VZO thin films revealed that the deposited thin films have been grown preferentially along (002) and exhibit the hexagonal wurtzite structure. The cross-sectional and microstructural analysis performed by Scanning Electron Microscopy (SEM) confirms the columnar growth of nanostructures. The deposited thin films exhibit transparent behavior with transmission >70% in the visible region. It has been observed that nanostructured thin films with vanadium content of 2% have demonstrated the lowest resistivity (6.71 × 10−4 Ω cm) with Hall mobility of 10.62 cm2 V−1 s−1. The deposited vanadium doped nanostructured thin films would have potential applications in electronic and optoelectronic devices.

Plasma-assisted deposition of indium tin oxide thin films by sublimation using an anodic vacuum arc discharge

With the anodic vacuum arc discharge as a method of physical vapor deposition (PVD) excellent properties of thin transparent conductive oxide films can be achieved, but the relations between the process parameters and the coating properties have been insufficiently described in the literature. This paper is intended to narrow this gap by investigations on indium tin oxide (ITO) thin films deposited on borosilicate glass sheets by sublimation of indium tin oxide (90:10) using an anodic vacuum arc. The arc discharge is based on a hot hollow cathode electron source and a special evaporator connected as anode. The concentration of the discharge onto the sublimating material is achieved by combining the magnetic fields of an axially symmetrical permanent magnet system and a solenoid coil. Coating rates of about 15 nm/s were achieved with an arc current of 60 A. Measurements with a planar Langmuir probe have shown that the vapor is highly ionized (about 95%). The discharge voltages are relatively low (< 60 V), so it can be assumed that the particle energies are correspondingly low. Substrate temperature (30–300 °C), oxygen gas flow (0–100 sccm) and gas pressure (0.04–0.4 Pa) were varied to study their influence on the thin film properties. Specific electrical conductivity, density and mobility of charge carriers, as well as optical properties were determined and compared with those of other PVD processes. Low specific electrical resistance of 1.8–2.0 x 10–4 Ω cm was reached at a substrate temperature of 200–300 °C independently of the pressure. The mean optical transmission (in the spectral range between 400 nm and 1100 nm) of 100 nm thick ITO films deposited at a temperature of 200 °C and at an optimized oxygen flow was determined to 84%. The roughness of the layers determined by atomic force microscopy is significantly lower than typically for magnetron sputtered films. At a pressure of 0.04 Pa, the crystalline bixbyite phase can already be detected at a coating temperature of approx. 30 °C, whereby the layer growth begins with the formation of an amorphous structure and changes to the crystalline phase with increasing layer thickness. At a temperature above 100 °C and low coating pressure the layers are completely crystalline. At a higher pressure the transition from amorphous to crystalline phase is shifted towards higher temperature. For lower oxygen flows the crystallites exhibit mainly a preferred (211) orientation. For higher oxygen flows the texture of crystallites is changed and the intensity of (440) and (622) is increased. The formation of these special crystallographic textures can probably explain the very low roughness values of the ITO layers measured by atomic force microscopy. The investigations have shown how the film properties can be adjusted by the process parameters and that the ITO sublimation using an anodic vacuum arc is suited very well for plasma assisted ITO thin film deposition.

Self Standing Mats of Blended Polyaniline Produced by Electrospinning.

Conducting nanofibers of polyaniline (PANI) doped with camphor-10-sulfonic acid (HCSA) and blended with different polymers, such as polymethyl methacrylate (PMMA) and polyvinyl acetate (PVAc), have been fabricated using the electrospinning technique. Scanning electron microscopy (SEM) and thermal gravimetric analysis (TGA) were utilized to characterize the morphology and the thermal stability of PANI-blended fibers. An extensive study was performed to understand the copolymer influence on both the structural and surface properties of the realized conductive thin films. Samples main electrical characteristics, as conductivity, specific capacitance and electrochemical performances were tested. The better mats were obtained with the use of PVAc copolymer, which showed a conductivity value two orders of magnitude higher than the PMMA system. Aiming at further improving the electrochemical features of these blended mats, hybrid fibers based on PANI/PVAc/graphene oxide and PANI/PVAc/iron oxide were also produced and characterized. The obtained mats were potentially addressed to numerous practical fields, including sensors, health applications, smart devices and multifunctional textile materials.

Tailoring the structural, morphological, electrical and optical characteristics of transparent and conductive ZnO/Ag-NPs thin film coatings

In this study, high quality ZnO/Ag-NPs thin transparent and conductive film coatings were fabricated via sol-gel process combined with spin-coating technique. Structural, surface morphology, electrical and optical properties were investigated by means of XRD, Hall effect measurements, FESEM and UV-Vis. The synthesized ZnO/Ag-NPs thin films shows a polycrystalline wurtzite structure, and the grain sizes enlarged when the annealing temperature increased. The surface morphologies of the coatings were dense, smooth and homogeneous as proved by FESEM images. The resistivity of (5.8×10−4 Ω.cm), the carrier concentration of (3×1020 cm−3) and the mobility of (40 cm2/V s) were obtained from the film post heated with 500°C. Same thin film also shows the highest transmittance and energy gap of 88% and 3.71 eV respectively.

High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films.

High thermal conductivity materials show promise for thermal mitigation and heat removal in devices. However, shrinking the length scales of these materials often leads to significant reductions in thermal conductivities, thus invalidating their applicability to functional devices. In this work, we report on high in-plane thermal conductivities of 3.05, 3.75, and 6 μm thick aluminum nitride (AlN) films measured via steady-state thermoreflectance. At room temperature, the AlN films possess an in-plane thermal conductivity of ∼260 ± 40 W m-1 K-1, one of the highest reported to date for any thin film material of equivalent thickness. At low temperatures, the in-plane thermal conductivities of the AlN films surpass even those of diamond thin films. Phonon-phonon scattering drives the in-plane thermal transport of these AlN thin films, leading to an increase in thermal conductivity as temperature decreases. This is opposite of what is observed in traditional high thermal conductivity thin films, where boundaries and defects that arise from film growth cause a thermal conductivity reduction with decreasing temperature. This study provides insight into the interplay among boundary, defect, and phonon-phonon scattering that drives the high in-plane thermal conductivity of the AlN thin films and demonstrates that these AlN films are promising materials for heat spreaders in electronic devices.

Synthesis of AgNWs using copper bromide as stabilizing agent and oxygen scavenger and their application in conductive thin films

Silver nanowires (AgNWs) have attracted growing interest because of their wide range of applications in modern nano electronic appliances. During polyol method, the presence of cations and anions in the reaction solution has influence on the final morphology of AgNWs. Here we report a feasible way to prepare AgNWs by polyol method. Copper bromide (CuBr2) salt was used to provide anions and cations in the reaction solution. The anions (Br−) helps in reducing the amount of free Ag+ by forming silver bromide (AgBr) during initial silver seeds formation and the cations scavenge oxygen from the surface of AgNWs during preferential growth of the AgNWs. Ethylene glycol (EG) was used as a solvent and reducing agent, silver nitrate (AgNO3) was used as Ag source and polyvinyl pyrrolidone (PVP) was used as a capping agent. The effects of various factors which influence the final morphology of AgNWs were studied. AgNWs were successfully synthesized in the presence of CuBr2 salt. The morphology of the synthesized AgNWs was characterized by the SEM and TEM. The crystallinity was characterized by HRTEM, SAED and XRD. The LSPR peaks of Ag nanostructures were revealed by UV–Vis spectroscopy. The conductive properties of AgNWs thin conductive films were studied by coating the synthesized nanowires on polyethylene terephthalate (PET) substrate.

Improved performance of transparent conductive Cu-based GZO multilayer thin films on flexible substrates via two Al2O3 layers and oxygen-containing atmosphere

High performance of transparent conductive Cu-based Ga: ZnO (GZO) multilayer thin films deposited on flexible substrates are achieved by two Al2O3 barrier layers and oxygen. The multilayers exhibit high figure of merit (FOM) of 3.03 × 10−2 Ω−1 with the resistivity of 4.24 × 10−5 Ω cm and sheet resistance of 6.06 Ω/sq., while the average optical transmittance is above 84% in the visible range. The FOM value is the highest among all the reported Cu-based transparent conductive thin films. The influence mechanisms of Al2O3 layers and oxygen on structural, morphological, electrical and optical properties of the multilayer films are also investigated. These results indicate that the insertion of two thin Al2O3 barrier layers and the filling of oxygen during the deposition of GZO layers is an effective way to improve the photoelectric performance of the Cu-based GZO multilayer films.

Sheet Resistance Measurements of Conductive Thin Films: A Comparison of Techniques

Conductive thin films are an essential component of many electronic devices. Measuring their conductivity accurately is necessary for quality control and process monitoring. We compare conductivity measurements on films for flexible electronics using three different techniques: four-point probe, microwave resonator and terahertz time-domain spectroscopy. Multiple samples were examined, facilitating the comparison of the three techniques. Sheet resistance values at DC, microwave and terahertz frequencies were obtained and were found to be in close agreement.

Room-Temperature Coalescence of Tri-n-Octylphosphine-Oxide-Capped Cu-Ag Core-Shell Nanoparticles: Effect of Sintering Agent and/or Reducing Agent

Abstract Metal nanoparticle pastes are useful for nanoinks to form fine conductive patterns in printed electronics. This study reports a novel method for room-temperature coalescence of Cu-Ag core-shell nanoparticles (Cu@Ag NPs), which are expected to have the properties of both migration and oxidation resistance originating from Cu and Ag, respectively. First, oleylamine/oleic-acid capped Cu@Ag NPs were synthesized by the galvanic replacement method. Second, the ligand exchange reaction to tri-n-octylphosphine oxide (TOPO) was carried out on the surface of Cu@Ag NPs. Finally, TOPO-capped Cu@Ag NPs were dipped into methanol containing a sintering agent and/or a reducing agent. When HCl was added as a sintering agent to methanol, the crystallite size of Cu@Ag NPs significantly increased. Furthermore, the almost complete removal of organic compounds and suppression of significant oxidation of Ag and Cu were observed. In consideration of these results, a Cu/Ag conductive thin film was prepared from TOPO-capped Cu@Ag NPs by dipping into methanol containing HCl at room temperature under air atmosphere. Electrical resistivity of the obtained Cu/Ag thin film was (5.1 ± 1.7) × 10−5 Ω m. Microstructural observations and X-ray diffractions of the Cu/Ag thin film revealed that Cu@Ag NPs effectively coalesced at room temperature with slight oxidation.

Equivalent Electrical Circuit Modeling of CNT-Based Transparent Electrodes

Among the various applications of carbon nanotubes (CNTs) that have been investigated since the discovery of their exceptional potential in the electronic field, great interest has been directed towards the creation of carbon-based materials capable of replacing Indium Tin Oxide (ITO) as a transparent electrode. Such transparent conductive films find application in touch panels, LCD screens, OLED displays, photovoltaic cells, and many others. This review presents a collection of techniques that have been proposed during the last decade for the modeling of carbon nanotube-based materials by means of equivalent electrical networks. These networks represent the electrical properties of CNT-based conductive thin films in a way that can be easily included in circuit simulators for the simulation-assisted design of the different devices under static and dynamic conditions.

Steady-state methods for measuring in-plane thermal conductivity of thin films for heat spreading applications.

The development of high thermal conductivity thin film materials for the thermal management of electronics requires accurate and precise methods for characterizing heat spreading capability, namely, in-plane thermal conductivity. However, due to the complex nature of thin film thermal property measurements, resolving the in-plane thermal conductivity of high thermal conductivity anisotropic thin films with high accuracy is particularly challenging. Capable transient techniques exist; however, they usually measure thermal diffusivity and require heat capacity and density to deduce thermal conductivity. Here, we present an explicit uncertainty analysis framework for accurately resolving in-plane thermal conductivity via two independent steady-state thermometry techniques: particle-assisted Raman thermometry and electrical resistance thermometry. Additionally, we establish error-based criteria to determine the limiting experimental conditions that permit the simplifying assumption of one-dimensional thermal conduction to further reduce thermal analysis. We demonstrate the accuracy and precision (<5% uncertainty) of both steady-state techniques through in-plane thermal conductivity measurements of anisotropic nanocrystalline diamond thin films.