Carrier Conduction Research Articles

Achieving white electroluminescence and low current consumption in devices based on graphene oxide and silicon

This work reports the emission of white electroluminescence (EL) in devices based on silicon. These devices are formed by a heterostructure of porous silicon (PSi), graphene oxide (GO), silicon-rich-oxide (SRO) thin films, and zinc oxide (ZnO) as a transparent conductor oxide (contact). The current consumption in these devices has been reduced by approximately three orders of magnitude compared to the current currents commonly reported for electroluminescent devices. The white EL emission is corroborated by the EL spectra, which are very broad (from 400 to 750 nm) and are attributed to the different nanostructured defects present in the materials that make up the heterostructures. The devices exhibited EL only in negative bias. According to our analysis of the I–V curves, the space-charge limited current conduction mechanism is the dominant carrier conduction mechanism in the region where the EL takes place. The electroluminescence exhibited by these devices starts at a current of 1.1 μA and is the entire area electroluminescent at approximately 3 μA reaches its maximum value at 9 μA. We demonstrated that producing LEDs on a Si substrate can result in significant energy savings.

Ru-doping W4.6N4 nanoparticles anchored on N-doped graphene tubes as efficient hydrogen evolution electrocatalyst

Designing efficient electrocatalysts for hydrogen evolution reaction (HER) is essential to facilitate hydrogen energy applications. Herein, efficient strategies of doping with metal atoms (Ru) and incorporating with conductive carbon-based material (N-doping graphene tubes) have been developed to construct the hybrid electrocatalyst RuW4.6N4@N-GTs, in which, Ru-doped W4.6N4 nanoparticles integrated on the surface of N-doped graphene tubes. RuW4.6N4@N-GTs reveals superior HER activity and good stability, with a low overpotential of 29 mV to deliver the current density of 10 mA cm−2 and a low Tafel slope of 57 mV dec−1. The unique 3D nano-structure morphology of abundant homogeneous RuW4.6N4 nanoparticles supported on conductive N-GTs network carrier contributes to expose more electrochemical active sites, promoting electrolyte transport and gas emission. At the same time, the N-GTs skeleton could prevent the RuW4.6N4 particles from agglomerating and collapsing, thus leading to the superior stability during HER process. The in situ Ru heteroatom doping could cause the directional electron transfer and more nitrogen vacancies, thus modulating the electron structure of catalysts and optimizing the hydrogen adsorption free energy. The synergistic effect of the above merits endows RuW4.6N4@N-GTs with outstanding HER performance for potential applications in the hydrogen production field.

Thermal transport and topological analyses of the heat-carrying modes and their relevant local structures in variously dense amorphous alumina

Engineering the thermal conductivities of amorphous materials is important for thermal management of various semiconducting devices. However, controlling the heat carriers—long-range propagating propagons and short-range hopping diffusons—in disordered lattices is difficult because the carriers are strongly correlated with lattice disorder. To clarify the relationship between lattice disorder and heat conduction, we must simultaneously investigate the important local structures hidden in a disordered system and the microscopic transport characteristics of propagons and diffusons. Here, we explore the variations in spectral thermal conductivity and the relevant local structures in amorphous alumina (a-Al2O3) at different densities by performing the spectral thermal transport and persistent homology analyses. As the density increases, the thermal conductivity of the high-frequency diffusons linearly increases but those of the propagons and low-frequency diffusons remain constant. The density increase enhances the local strain, thereby increasing the mean free paths of the high-frequency diffusons. The density of states competes with diffusivity, lowering the sensitivity of the density response to the thermal conductivity of low-frequency heat carriers. Furthermore, from the obtained topological features of the connections between the oxygen atoms, we inferred that the collapsed network of six-coordinated AlO6 octahedron clusters underlies the transport of high-frequency diffusons. Besides revealing the conductive pathways of heat-carrying modes in disordered lattices, topology-assisted spectral thermal transport analysis is useful for tailoring the thermal conductivities of amorphous materials.

Unlocking and optimizing the thermodynamic potential of tetragonal Si and Ge: Strategies and insights from a tight-binding simulation framework for material engineering

This study theoretically explores the effects of external fields and doping on the electronic and thermoelectric properties of tetragonal silicon (T-Si) and tetragonal germanium (T-Ge) structures using a tight-binding model, Green’s function formalism, and the Kubo formula. External parameters modify the positions and intensities of the density of states (DOS) peaks, influencing charge carrier excitation and conductivity trends. Applying bias voltage introduces zero-intensity regions in thermal conductivity due to band gap opening, reducing thermal properties. In contrast, chemical potential and magnetic field significantly enhance thermal properties by increasing intensity and shifting the peak position. T-Ge exhibits higher thermal properties than T-Si across the selected parameter ranges. The findings highlight the potential for optimizing and enhancing the thermoelectric properties of tetragonal structures through external controllable parameters.

Inorganic‐Organic Hybrid Crystals Derived from Polyoxovanadate and Ionic‐Liquid toward Promising Conductive Materials

AbstractConductive polyoxovanadate inorganic‐organic hybrid crystals comprising alkaline earth metal (divalent) cations were successfully obtained with the use of an ionic‐liquid cation having imidazolium and methacryloyl moieties (denoted as MAImC1). Two types of crystals containing decavanadate ([V10O28]6−, V10) anion were obtained as [MAImC1]2Ca2[V10O28] ⋅ 16H2O ⋅ 2 C2H5OH (MAImC1−Ca−V10) and [MAImC1]2Mg2[V10O28] ⋅ 18H2O ⋅ 2 C2H5OH (MAImC1−Mg−V10). Connection modes of the divalent cations were different: Ca2+ cations were connected to V10 to form a {[Ca(H2O)5]2V10O28]}2− anion in MAImC1−Ca−V10, while a discrete [V10O28]6− and hydrated [Mg(H2O)6]2+ were present in MAImC1−Mg−V10. Conductivities under a fully humidified condition at 353 K (80 °C) were high values of 3.0×10−4 S cm−1 for MAImC1−Ca−V10 and 3.3×10−3 S cm−1 for MAImC1−Mg−V10, respectively. The higher conductivity under hydrated conditions suggests proton as a conductive carrier. The better conductivity of MAImC1−Mg−V10 is plausibly derived from the more effective hydrogen‐bonded network in the crystal lattice.

N-doped hollow nanofibers loaded with RuCoNi ternary alloy as an efficient catalyst for hydrogen evolution reaction

Alloying noble metals with abundant transition metals is an effective strategy for preparing cost-effective electrocatalysts for efficient hydrogen evolution reaction. In this study, hollow carbon nanofibers loaded with RuCoNi ternary alloy nanofiber catalysts (RuCoNi/CNFs) were synthesized by coaxial electrostatic spinning and a high-temperature carbonization approach. The interconnected three-dimensional hollow nanofibers, uniformly loaded with RuCoNi alloy nanoparticles, provided a large specific surface area and a hierarchical porous structure to enhance the interaction between the electrolyte and the active sites. Additionally, the hollow structure facilitated active sites exposure, charge transport, and gas diffusion, resulting in excellent HER activity of RuCoNi/CNFs. The overpotential required to achieve a current density of 10 mA cm−2 under alkaline conditions was only 47 mV, outperforming the homemade Pt/C catalyst (54 mV). Moreover, the carbon structure acted as a conductive carrier for efficient electron transfer, protecting the alloy nanoparticles from aggregation and corrosion. The RuCoNi/CNFs demonstrated remarkable stability and durability, maintaining consistent performance even after 100 hours of continuous operation. Importantly, the catalyst also exhibited favorable HER activity (186 mV@100 mA cm−2) at high current density, highlighting its potential for practical applications in large-scale industry.

Effect of Magnetic Moment on Carrier Effective Mass and Transport in Magnetic Nd2Fe14B Composite Bi2Te3 Films.

A composite of magnetic and thermoelectric (TE) materials is one of the most popular methods to improve TE properties. However, the influential mechanism of the magnetic property on the carrier has not been clarified. In this study, Nd2Fe14B cylinders are used as the magnetic phase to regulate carrier behaviors in Bi2Te3 films. Roaming state Fe atoms in Nd2Fe14B provide some carriers. The VTe at the composite interface also provides carriers. These lead to the increase of carrier concentration and conductivity of the composite film. Meanwhile, the Lorentz force generated by the magnetic moment of Nd2Fe14B provides the carriers with a stronger energy, which results in the increase of carrier effective mass and thereby increases the Seebeck coefficient. Thus, the power factor of the magnetic composite film is improved by 366% compared with that of the pure Bi2Te3 film.

Unraveling Defect-Mediated Enhancement of Transient Photoconductivity and Slower Carrier's Mobility Decay in Cu-Doped Cs2AgBiBr6 Nanocrystals Using Ultrafast Pump-Probe Spectroscopy.

Lead-free double perovskite nanocrystals (A2B'(III)B″(I)X6 NCs) address the instability and toxicity concerns of lead-based counterparts, but their device performance is limited by subpar absorption and unexplored carrier dynamics. Impurity ion doping offers a route to tune electrical conductivity and charge carrier transport. Herein, we synthesized Cu-doped Cs2AgBiBr6 (CABB) nanocrystals using a hot-injection approach and investigated the charge carrier's dynamics through ultrafast pump-probe spectroscopy. Copper introduction into the CABB lattice enhanced absorption in the near-infrared region and introduced sub-band gap defect states in CABB NCs. The transient absorption study revealed a faster bleach decay with increased copper doping, as a result of charge transfer from the conduction band to copper defect states. Also, an optical pump terahertz probe study displays higher photoconductivity and mobility in Cu-doped CABB NCs. Slower mobility decay in Cu-doped systems was attributed to the charge carrier's entrapment at the defect state. These findings suggest that copper-doped CABB is a superior contender for optoelectronic applications over conventional CABB.

Probing the cw-Laser-Induced Fluorescence Enhancement in CsPbBr3 Nanocrystal Thin Films: An Interplay between Photo and Thermal Activation.

Perovskite nanocrystals hold significant promise for a wide range of applications, including solar cells, LEDs, photocatalysts, humidity and temperature sensors, memory devices, and low-cost photodetectors. Such technological potential stems from their exceptional quantum efficiency and charge carrier conduction capability. Nevertheless, the underlying mechanisms of photoexcitation, such as phase segregation, annealing, and ionic diffusion, remain insufficiently understood. In this context, we harnessed hyperspectral fluorescence microspectroscopy to advance our comprehension of fluorescence enhancement triggered by UV continuous-wave (cw) laser irradiation of CsPbBr3 colloidal nanocrystal thin films. Initially, we explored the kinetics of fluorescence enhancement and observed that its efficiency (φph) correlates with the laser power (P), following the relationship φph = 7.7⟨P⟩0.47±0.02. Subsequently, we estimated the local temperature induced by the laser, utilizing the finite-difference method framework, and calculated the activation energy (Ea) required for fluorescence enhancement to occur. Our findings revealed a very low activation energy, Ea ∼ 9 kJ/mol. Moreover, we mapped the fluorescence photoenhancement by spatial scanning and real-time static mode to determine its microscale length. Below a laser power of 60 μW, the photothermal diffusion length exhibited nearly constant values of approximately (22 ± 5) μm, while a significant increase was observed at higher laser power levels. These results were ascribed to the formation of nanocrystal superclusters within the film, which involves the interparticle spacing reduction, creating the so-called quantum dot solid configuration along with laser-induced annealing for higher laser powers.

Highly sensitive tetracycline detection using a triple amplification aptasensor based on graphene-carbon nanotube, Exonuclease I, and gold nanoprobes

Enhancing the sensitivity of targeted substance detection is crucial, yet prior research seldom incorporates more than two signal amplification methods. In this study, we introduced a novel triple signal amplification strategy for tetracycline detection using an aptasensor. This strategy integrates a graphene and multi-walled carbon nanotubes composite (GO-MWCNTs), Exonuclease I (Exo I), and a hybrid DNA-gold nanoparticle (AuNPs)-horseradish peroxidase (HRP) system. The GO-MWCNTs serve as a conductive carrier, boosting electron transfer for initial signal amplification. Exo I, targeting single-stranded DNA, facilitates target recovery and secondary signal amplification. The gold nanoprobe, through specific base pairing, binds to the tetracycline aptamer’s complementary chains on the electrode surface. Horseradish peroxidase’s catalytic action then generates a robust electrochemical signal, culminating in three-stage signal amplification. This optimized approach achieved a low detection limit of 3.3 × 10−4 ng mL−1, with a range from 1 × 10−3 ng mL−1 to 1 × 103 ng mL−1. Notably, the aptasensor demonstrated high selectivity, repeatability, stability, and reliability. These findings offer a promising reference for developing effective aptasensors in antibiotic detection.

Unusually high thermal conductivity in suspended monolayer MoSi2N4

Two-dimensional semiconductors with high thermal conductivity and charge carrier mobility are of great importance for next-generation electronic and optoelectronic devices. However, constrained by the long-held Slack’s criteria, the reported two-dimensional semiconductors such as monolayers of MoS2, WS2, MoSe2, WSe2 and black phosphorus suffer from much lower thermal conductivity than silicon (~142 W·m–1·K–1) because of the complex crystal structure, large average atomic mass and relatively weak chemical bonds. Despite the more complex crystal structure, the recently emerging monolayer MoSi2N4 semiconductor has been predicted to have high thermal conductivity and charge carrier mobility simultaneously. In this work, using a noncontact optothermal Raman technique, we experimentally measure a high thermal conductivity of ~173 W·m–1·K–1 at room temperature for suspended monolayer MoSi2N4 grown by chemical vapor deposition. First-principles calculations reveal that such unusually high thermal conductivity benefits from the high Debye temperature and small Grüneisen parameter of MoSi2N4, both of which are strongly dependent on the high Young’s modulus induced by the outmost Si-N bilayers. Our study not only establishes monolayer MoSi2N4 as a benchmark 2D semiconductor for next-generation electronic and optoelectronic devices, but also provides an insight into the design of 2D materials for efficient heat conduction.

Mechanism of self-supporting montmorillonite composite material for bio-enhanced degradation of chlorotetracycline: Electron transfer and microbial response

The efficient degradation of antibiotics holds significant implications for mitigating environmental pollution. This study synthesized a montmorillonite chitosan composite material (MMT-CS) using the gel template method. Subsequently, a bio-enhanced reactor was constructed to facilitate the degradation of chlorotetracycline (CTC). The addition of MMT-CS composite material enables the degradation of different concentrations of CTC. MMT-CS, a conductive carrier, effectively promotes microbial adhesion and boosts the metabolic activity of functional microorganisms. Additionally, it facilitates the maintenance of microbial activity under CTC pressure by promoting the secretion of extracellular polymeric substances, increasing critical enzyme activity, and enhancing the electron transfer capacity within the system. In this MMT-CS bio-enhanced process, Paracoccus (11.4%) and Bacillus (3.9%) are utilized as essential bacteria genes. The results of metabolic pathways prediction indicated significant enhancements in membrane-transport, nucleotide-metabolism, replication-repair, and lipid-metabolism. Thus, the developed self-supporting MMT-CS bio-enhanced process ensured the stability of the system during the removal of antibiotics.

Structural, Electrical, and Optical Properties of Single-Walled Carbon Nanotubes Synthesized through Floating Catalyst Chemical Vapor Deposition.

Single-walled carbon nanotube (SWCNT) thin films were synthesized by using a floating catalyst chemical vapor deposition (FCCVD) method with a low flow rate (200 sccm) of mixed gases (Ar and H2). SWCNT thin films with different thicknesses can be prepared by controlling the collection time of the SWCNTs on membrane filters. Transmission electron microscopy (TEM) showed that the SWCNTs formed bundles and that they had an average diameter of 1.46 nm. The Raman spectra of the SWCNT films suggested that the synthesized SWCNTs were very well crystallized. Although the electrical properties of SWCNTs have been widely studied so far, the Hall effect of SWCNTs has not been fully studied to explore the electrical characteristics of SWCNT thin films. In this research, Hall effect measurements have been performed to investigate the important electrical characteristics of SWCNTs, such as their carrier mobility, carrier density, Hall coefficient, conductivity, and sheet resistance. The samples with transmittance between 95 and 43% showed a high carrier density of 1021-1023 cm-3. The SWCNTs were also treated using Brønsted acids (HCl, HNO3, H2SO4) to enhance their electrical properties. After the acid treatments, the samples maintained their p-type nature. The carrier mobility and conductivity increased, and the sheet resistance decreased for all treated samples. The highest mobility of 1.5 cm2/Vs was obtained with the sulfuric acid treatment at 80 °C, while the highest conductivity (30,720 S/m) and lowest sheet resistance (43 ohm/square) were achieved with the nitric acid treatment at room temperature. Different functional groups were identified in our synthesized SWCNTs before and after the acid treatments using Fourier-Transform Infrared Spectroscopy (FTIR).

Benzoylation of Iota Carrageenan: Development of a Stable, Conductive, and Hydrophobic Drug Carrier with Reduced Toxicity and Improved Gel‐Forming Ability

Benzoylation of Iota Carrageenan: Development of a Stable, Conductive, and Hydrophobic Drug Carrier with Reduced Toxicity and Improved Gel‐Forming Ability

Studies of carrier transport mechanism in NiO/Ag/NiO transparent conducting electrode/ZnO metal-semiconductor-metal photodetectors

Oxide/metal/oxide multilayers as a transparent conducting electrode (TCE) have been developed to replace metals due to their high transparency and low sheet resistance. Nickel oxide (NiO) film with a high work function was used as an oxide to form NiO/Ag/NiO (NAN) TCE, therefore a high barrier height between NAN/zinc oxide (ZnO) interface. In the study, NAN TCE was deposited on ZnO surface to fabricate metal-semiconductor-metal (MSM) photodetectors (PDs) and study its carrier transport mechanism. The NAN TCE has a low sheet resistance of 6.5 Ω/sq. and transmittance more than 40% in a 300−1000 nm wavelength range. Such issues result in the figure-of-merit is higher (2.3 × 10−4 Ω−1) than that (2.5 × 10−7 Ω−1) of pure single NiO thin film. As compared to the conventional Au/ZnO MSM-PDs, the NAN/ZnO MSM-PDs demonstrates a lower leakage current as a result of Ni atoms diffusing into ZnO and passivating the defects. Due to the high work function of NiO, the NAN/ZnO interface exhibits a barrier height as high as 0.91 eV. The Au/ZnO MSM-PDs reveals only one carrier conduction of ohmic due to the electrons tunnel form Au into ZnO through the surface defects. In contrast, two distinct carrier transport mechanisms were observed in the NAN/ZnO MSM-PDs. At low-voltage for V⩽0.64 V , ohmic conduction dominates and the electrons inject from NAN to ZnO, trapped by the defect states of ZnO. At high-voltage for V⩾0.64 V , the trapped electrons acquire enough energy and emit from trap to conduction band, entering Poole–Frankel emission transport.

Hierarchical NiGa2O4@C@CeO2 microstructure for sensitive and selective triethylamine gas sensing

Metal oxide heterostructures have been demonstrated excellent candidates acting as novel gas sensors with outstanding sensitivity and selectivity. In this work, a hierarchical NiGa2O4@C@CeO2 heterostructure with corn-like NiGa2O4 microcrystals covered by a thin carbon layer and then anchored with numerous amounts of external CeO2 nanoparticles was prepared through the combination of hydrothermal and a subsequent calcination method. The NiGa2O4@C@CeO2 composite demonstrates an excellent selective triethylamine (TEA) detection performance with a response of 11.1 towards 20 ppm TEA and a fast response/recovery time of 81 s/38 s. It also shows terrific selectivity for TEA when mixed with else interfering substances, along with prolonged reusability for at least 15 days. The enhanced TEA sensing performance can be ascribed to the significant improvement of conductivity and effective carrier transfer at the interface. This work provides a feasible method to fabricate metal oxide sensors with improved gas sensing performance.

Electronic Delocalization Engineering of β‐AsP Enabled High‐Efficient Multisource Logic Nanodevices

AbstractDelocalized electron and phonon structures are directives for rationally tuning the intrinsic physicochemical properties of 2D materials by redistributing electronic density. However, it is still challenging to accurately manipulate the delocalized electron and systematically study the relationships between physiochemical properties and practical nanodevices. Herein, the effects of delocalized electrons engineering on blue‐arsenic‐phosphorus (β‐AsP)‐based practical devices are systematically investigated via implementing vacancies or heteroatom doping. A tendency of carrier conductivity property from “half‐metal” to “metal” is initially found when tuning the electronic structure of β‐AsP with adjustable vacancy concentrations below 2 at% or above 3 at%, which can be ascribed to the introduction of delocalized electrons that cause asymmetric contributions to the electronic states near the implementation site. In optical logic device simulations, broadband response, triangular wave circuit system signal, and reverse polarization anisotropy are achieved by adjusting the vacancy concentration, while extinction ratios are as high as 1561. The electric and thermic‐logic devices realize the highest available reported giant magnetoresistance (MR) up to 1013% and 1039% at vacancy concentrations of 1.67% and 0.89%, respectively, which is significantly superior to the reports. The results shed light on the electronic delocalization strategy of regulating internal structures to achieve highly efficient nanodevices.

Structural, dielectric, electrical, and energy storage properties of Mn‐doped Ba0.55Sr0.45TiO3 ceramics

AbstractA conventional solid‐state reaction route was utilized for the fabrication of Ba0.55Sr0.45Ti1−xMnxO3 (x = .004, .006, .008, .01, and .015) ceramics. X‐ray diffraction (XRD) diffractograms revealed pseudo‐cubic structural symmetry with a single phase. The scanning electron microscope (SEM) images revealed fine grain morphology for x = .006, while an obvious increase in grain size was detected at x > .006. A high‐energy storage density (Ws) of 2.47 J cm−3 and a recoverable energy density (Wrec) of 1.36 J cm−3 at an applied electric field of 220 kV cm−1 were achieved for x = .006. An impedance spectroscopic study showed the electrical response relationship with microstructure. The observed two semicircles in Nyquist plots are an indication of the contribution of grains (bulk) and grain boundaries as a resistive medium for conduction of charge carriers, which led to enhanced the capability in capacitor applications.

Ge-Doped Hematite with FeCoNi-Bi as Cocatalyst for High-Performing Photoelectrochemical Water Splitting.

Hematite is a promising photoanode material for photoelectrochemical water-splitting technology. However, the low current density associated with the low conductivity, low charge carrier mobility, and poor oxygen evolution catalytic activity is a challenging issue for the material. In this study, the challenge is addressed by introducing Germanium (Ge) doping, coupled with the use of FeCoNi-Bi as a co-catalyst. Ge doping not only increases the conductivity and charge carrier concentration of the hematite photoanode, but also induces nanopores, thereby expanding its electrochemical reactive surface area to facilitate the oxygen evolution reaction. In the meantime, the FeCoNi-Bi cocatalyst electrodeposited onto the surface of Ge-doped hematite, improves the oxygen evolution reaction performance. As a result, the obtained photoanode achieves a photocurrent density of 2.31mAcm-2 at 1.23 VRHE, which is three times higher than that of hematite (0.72mAcm-2). Moreover, a new analytical method is introduced to scrutinize both the positive and negative effects of Ge doping and FeCoNi-Bi cocatalyst on the photoanode performance by decoupling the photoelectrochemical process steps. Overall, this study not only enhances the performance of hematite photoanodes but also guides their rational design and systematic assessment.

Optimizing thermoelectric performance of BiSbPbTe thin films through controlled post-annealing: A comprehensive structural and electronic study

This study investigates the structural and electronic properties of BiSbPbTe thin films, focusing on the impact of post-annealing time and temperature. The X-ray diffraction (XRD) analysis reveals a stable rhombohedral phase formation in all samples, with no secondary phases detected within the detection limit. The high crystallinity of the films is confirmed, and post-annealing leads to an increase in peak intensity, indicating enhanced crystalline structure. Surface morphology analysis using scanning electron microscopy (SEM) demonstrates a transition from inhomogeneous features in as-grown films to homogeneous and dense formations in post-annealed films. The grain size increases with post-annealing time, attributed to diffusion, energy minimization, nucleation, growth, and thermal activation processes. The electronic transport properties, including carrier concentration and conductivity, are influenced by post-annealing temperature and duration. A stable carrier concentration is observed for films post-annealed for up to 2 h, while longer durations decrease due to reduced defect vacancies and grain boundaries. The increase in charge carrier mobility, confirmed by SEM results, contributes to enhanced electrical conductivity. The Seebeck coefficient shows an initial enhancement up to 2 h post-annealing, attributed to defect creation and increased grain boundaries. However, further increases in post-annealing duration result in a decrease in the Seebeck coefficient due to enhanced charge carrier mobility and reduced grain boundaries. The thermoelectric power factor (4.4 μW/cm1K2), determined by the square of the Seebeck coefficient and electrical conductivity, reaches its maximum value in the 2-h post-annealed sample, emphasizing the importance of optimizing post-annealing conditions for improved thermoelectric performance.