Conductive Atomic Force Microscopy Research Articles

Investigation on Junction Contacts of Semiconducting Carbon Nanotube Networks Using Conductive Atomic Force Microscopy.

Semiconductor single-walled carbon nanotube (s-SWNT) networks have gained prominence in electronic devices due to their cost-effectiveness, relatively production-naturality, and satisfactory performance. Configuration, density, and resistance of SWNT-SWNT junctions are considered crucial factors influencing the overall conductivity of s-SWNT networks. In this study, we present a method for inferring the lower bounds of the SWNT-SWNT junction resistance in s-SWNT networks based on conductive atomic force microscopy TUNA images. This method further enables the proposal of a classification for SWNT-SWNT junctions based on the current behavior relative to their surroundings. The three types of SWNT-SWNT junctions are denoted as (i) true contact (T), (ii) poor contact (P), and (iii) false contact (F). Of them, the true and poor contacts, respectively, represent good and poor electrical contact for the subject SWNT-SWNT junctions whose electrical conductivity hardly improves under external tip pressure, while that of the false contact can be further improved by external pressure. Statistical analysis demonstrates that while T-type junctions make a significant contribution to network conductivity, their proportion accounts for only approximately 40%. The P-type and F-type junctions, which constitute over 60% of the total, may be a contributing factor that constrains the overall conductivity of the s-SWNT networks. The height ratio of the junction to the sum of two SWNTs was also observed to exhibit variations among the three types. Finally, we propose a three-dimensional model to elucidate the formation mechanism underlying each type of junction. The present study provides insights into the performance of spontaneous contacts between s-SWNTs in the networks, and the systematic image acquisition and junction classification processes may provide support for future advancements in these networks.

The Effect of Relative Humidity in Conductive Atomic Force Microscopy.

Conductive atomic force microscopy (CAFM) analyzes electronic phenomena in materials and devices with nanoscale lateral resolution, and it is widely used by companies, research institutions, and universities. Most data published in the field of CAFM is collected in air at a relative humidity (RH) of 30-60%. However, the effect of RH in CAFM remains unclear becauseprevious studies often made contradictory claims, plus the number of samples and locations tested is scarce. Moreover, previous studies on this topic didnot apply current limitations, which can degrade the CAFM tips and generate false data. This article systematically analyzes the effect of RH in CAFM by applying ramped voltage stresses at over 17,000 locations on ten different samples (insulating, semiconducting, and conducting) under seven different RH. An ultra-reliable setup with a 110-pA current limitation during electrical stresses is employed, andexcellent CAFM tip integrity after thousands of tests is demonstrated. It is found that higher RH results in increased currents due to the presence of a conductivewater meniscus at the tip/sample junction, which increases the effective area forelectron flow. This trend is observed in insulators and ultra-thin semiconductors; however, in thicker semiconductors the electron mean free path is high enough to mask this effect. Metallic samples show no dependence on RH. This study clarifies the effect of relative humidity in CAFM, enhances understanding of the technique, and teaches researchers how to improve the reliability of their studies in this field.

Scalable Layer-Controlled Oxidation of Bi2O2Se for Self-Rectifying Memristor Arrays With sub-pA Sneak Currents.

Smart memristors with innovative properties are crucial for the advancement of next-generation information storage and bioinspired neuromorphic computing. However, the presence of significant sneak currents in large-scale memristor arrays results in operational errors and heat accumulation, hindering their practical utility. This study successfully synthesizes a quasi-free-standing Bi2O2Se single-crystalline film and achieves layer-controlled oxidation by developing large-scale UV-assisted intercalative oxidation, resulting β-Bi2SeO5/Bi2O2Se heterostructures. The resulting β-Bi2SeO5/Bi2O2Se memristor demonstrates remarkable self-rectifying resistive switching performance (over 105 for ON/OFF and rectification ratios, as well as nonlinearity) in both nanoscale (through conductive atomic force microscopy) and microscale (through memristor array) regimes. Furthermore, the potential for scalable production of self-rectifying β-Bi2SeO5/Bi2O2Se memristor, achieving sub-pA sneak currents to minimize cross-talk effects in high-density memristor arrays is demonstrated. The memristors also exhibit ultrafast resistive switching (sub-100ns) and low power consumption (1.2 pJ) as characterized by pulse-mode testing. The findings suggest a synergetic effect of interfacial Schottky barriers and oxygen vacancy migration as the self-rectifying switching mechanism, elucidated through controllable β-Bi2SeO5 thickness modulation and theoretical ab initio calculations.

Study on the electrical performance degradation mechanism of β -Ga2O3 p-n diode under heavy ion radiation

The impact of heavy ion irradiation on the β-Ga2O3 p-n diode and its physical mechanism have been studied in this Letter. After the irradiation fluence of 1 × 108 cm−2, it is observed that the electrical performance of the device is significantly degraded. The forward current density (JF) is reduced by 49.4%, the reverse current density (JR) is increased by more than two orders of magnitude, and the breakdown voltage (VBR) is decreased by 30%. Based on the results of the deep-level transient spectroscopy measurement, it is concluded that acceptor-like traps generated with an energy level of EC-0.75 eV in the β-Ga2O3 drift layer dominate the JF degradation of the device, which are most likely related to Ga vacancies. These acceptor-like traps result in the reduction of change carrier concentration, which in turn leads to a decrease in JF. In addition, according to the conductive atomic force microscope measurements and theoretical calculation, it is clearly observed that the latent tracks induced by heavy ion irradiation can act as leakage paths, leading to a significant degradation of JR and VBR.

Unveiling the Nanoscale Dielectric Gap and Its Influence on Ferroelectric Polarization Switching in Scanning Probe Microscopy

AbstractThe dielectric gap between the scanning probe microscopy (SPM) tip and the surface of a ferroelectric using conductive atomic force microscopy and piezoresponse force microscopy (PFM) is investigated. While the gap functions as a dielectric layer, it also allows tunneling current to inject charges into the ferroelectric when a critical loading force between 10–20 µN is applied to a tip with a radius of 25 nm under a bias voltage of 0.5 V. It is observed that the permittivity of the dielectric gap determines the coercive voltage measured by the piezoresponse hysteresis loop. While such studies done in air often produce coercive voltages much larger than those studied for the same materials in capacitor‐based studies, the use of high permittivity media such as water (ɛr = 79) or silicone oil (ɛr = 2.1‐2.8) produces coercive fields that more closely match those measured in conventional capacitor‐based polarization hysteresis loop measurements. Furthermore, using water as a dielectric medium in PFM imaging enhances the accuracy in extracting the amplitude and phase data from periodically poled lithium niobate crystals. These findings provide insight into the nanoscale phenomena of polarization switching instigated by the SPM tip and provide a pathway to improved quantitative studies.

Multi-step switchable superdomain architecture with enhanced photoelectrical performance in epitaxial ferroelectrics

Ferroic domains and relevant topological defects, such as domain walls and vortices, have gained significant attention as functional units for potential advancements in nanoelectronics. Pb(ZrxTi1-x)O3 (PZT) is a tetragonal ferroelectric material at room-temperature, exhibiting remarkable piezoelectricity and intricate domain structures. In this work, we explore the ferroelectric properties, photoelectric reactions, and efficient manipulation pathways of the unconventional superstructures in epitaxial (101)-oriented PZT thin films. Employing piezoresponse force microscopy (PFM) and conductive atomic force microscopy (cAFM), we unveil the three-dimensional polarization configurations of the superdomain structures inherently featuring conductive charged domain walls. Our findings reveal an increase in photoactivity at the head-side charged domain walls, attributed to the band-bending mechanism. Additionally, we discover the enhanced photoelectrochemical (PEC) performance in the superdomain structures compared to the (101)-oriented PZT films with conventional c/a domains. Furthermore, time-dependent pulse voltages are utilized to dynamically assess local currents and realize direct conductivity modulation by manipulating distinct polarization states. The elucidation of the photoelectrical mechanism and delineation of diverse pathways for intermediate state control underscore the potential of ferroelectric superdomains in constructing functional photoelectronic nanodevices.

Benefits and Limitations of Encapsulating Platinum Electrocatalysts with Niobium Oxide

The development of energy infrastructure based on renewable sources is vital to reduce our reliance on fossil fuels. Technologies such as hydrogen fuel cells and water electrolyzers are able to bridge the gap between the intermittency issues associated with green energy sources such as wind and solar, and the demand for reliable electricity by being able to convert between electrical and chemical energy. Nanostructured and mesoporous platinum (Pt) prepared by electrodeposition or sputter coating have been shown to have increased performance in hydrogen fuel cells compared to the industry standard of Pt nanoparticles supported on carbon.1,2 Over the lifetime of a fuel cell Pt nanostructures and nanoparticles are, however, known to restructure and lose their surface area by mechanisms such as Ostwald ripening, dissolution, and coalescence. Previously, thin film Pt catalysts have been shown to be stabilized by a nanoscale film of niobium oxide.3 Herein, nanoscale thin films of niobium oxide are investigated as a stabilizing material through use by encapsulating nanostructured Pt catalysts.Nanostructured Pt catalysts were electrodeposited onto Pt-coated Si wafer substrates. Subsequently, niobium oxide films with thicknesses of 0.5 nm, 3 nm, and 4.5 nm were deposited onto the Pt catalyst using atomic layer deposition. X-ray fluorescence and conductive atomic force microscopy techniques were used to confirm the presence and coverage of the niobium oxide layer on the Pt catalyst. The performance of the encapsulated and un-encapsulated Pt catalysts as oxygen reduction reaction catalysts over the course of up to a thousand degradation cycles were evaluated using electrochemical techniques. The morphology of the catalyst before and after the degradation testing was also assessed using scanning electron microscopy techniques. Electrochemical impedance spectroscopy indicated that increasing the thickness of the niobium oxide layer increased the resistance of the catalyst towards the oxygen reduction reaction. The combined results of the analyses performed by electrochemical techniques and electron microscopy measurements revealed a range of film thicknesses for the niobium oxide that successfully stabilized the electrochemically active surface area and surface morphology of the Pt catalyst. Paul, M. T. Y.; Gates, B. D. Mesoporous Platinum Prepared by Electrodeposition for Ultralow Loading Proton Exchange Membrane Fuel Cells. Sci Rep 2019, 9, 4161.Debe, M. K. Tutorial on the Fundamental Characteristics and Practical Properties of Nanostructured Thin Film (NSTF) Catalysts. Electrochem. Soc. 2013, 160, F522.Eastcott, J.; Gates, B. D. Nanoscale Thin Films of Niobium Oxide on Platinum Surfaces: Creating a Platform for Optimizing Material Composition and Electrochemical Stability. Can. J. Chem. 2017, 96, 260–266.

Revealing the Properties of Electrically Driven Optical Antennas via Conductive Atomic Force Microscope.

Light emission from ultracompact electrically driven optical antennas (EDOAs) has garnered significant attention due to its terahertz modulation bandwidth. Typically, the EDOAs are fixed and nonadjustable once fabricated, thus hindering the attempts to investigate the influence of structural geometry on light emission properties. Here, we propose and demonstrate that the EDOAs can be constructed by carefully manipulating the gold-coated tips of atomic force microscopy operated in conductive mode into contact with the optical antennas covered by insulating film, where the position of the tunnel junction on the antenna surface can be controlled with high accuracy and flexibility. Taking gold nanorod antennas covered by HfO2 film as an example, we found that the highest light generation efficiency is obtained when the tunnel junction is located at the shoulder edge of the nanorod antenna, where the bonding dipolar surface plasmon mode in the junction is spectrally and spatially coupled with the longitudinal radiation mode of the EDOAs. Besides, position variation of the tunnel junction on the nanorod surface also strongly influences the far-field radiation angular distribution and emission spectrum. Numerical simulations are in good agreement with the experimental results. Our findings offer fundamental insights into the influence of structural parameters on the light emission performance of EDOAs, thus leading to better design of EDOAs with high light generation efficiency and powerful functionality.

An Infrared Nanospectroscopy Technique for the Study of Electric-Field-Induced Molecular Dynamics.

Static electric fields play a considerable role in a variety of molecular nanosystems as diverse as single-molecule junctions, molecules supporting electrostatic catalysis, and biological cell membranes incorporating proteins. External electric fields can be applied to nanoscale samples with a conductive atomic force microscopy (AFM) probe in contact mode, but typically, no structural information is retrieved. Here we combine photothermal expansion infrared (IR) nanospectroscopy with electrostatic AFM probes to measure nanometric volumes where the IR field enhancement and the static electric field overlap spatially. We leverage the vibrational Stark effect in the polymer poly(methyl methacrylate) for calibrating the local electric field strength. In the relevant case of membrane protein bacteriorhodopsin, we observe electric-field-induced changes of the protein backbone conformation and residue protonation state. The proposed technique also has the potential to measure DC currents and IR spectra simultaneously, insofar enabling the monitoring of the possible interplay between charge transport and other effects.

Unveiling charge transport in monolayer and few-layer CoPS3/metal contact: Insight from C-AFM

Monolayer and few-layer CoPS3 have been successfully synthesized via an Au-assisted exfoliation technique, with their transport properties subsequently investigated by conductive atomic force microscopy. Rectification effects can be observed in CoPS3 nanosheets due to the Schottky junction formation at the Au/CoPS3 interface, especially in configurations comprising two or more layer flakes. The distinct transport properties between monolayer and few-layer samples demonstrate that the charge transport behavior in the vertical direction is associated with the van der Waals gap. The calculated electron affinity for CoPS3 is about 4.84 eV, as revealed by the thermionic emission model. The results obtained contribute to the knowledge base concerning the transport characteristics of ultrathin MPX3, facilitating further exploration of the transport behavior of these materials and their potential applications in novel electronic devices.

Tribological manufacturing of ZDDP tribofilms functionalised by graphene nanoplatelets

Abstract 3D Tribo-Nanoprinting (3D TNP), which uses a highly controllable tribological contact to deposit tribofilms, has been proposed as a manufacturing method for nanoscale structures. Inspired by this, we show for the first time, as a proof of concept, the ability to electrically functionalise tribofilms for potential use in the manufacture of structures with nanoscale thickness. Zinc dialkyldithiophosphate (ZDDP) tribofilms have been generated to include varying concentrations of graphene nanoplatelets (GNPs) resulting in them becoming electrically conductive when tested using conductive atomic force microscopy (CAFM). In its highest GNP concentration, approximately 55% of the surface of the tribofilm was able to sustain current up to a threshold of 245 pA. The higher graphene content led to a suppression in film formation and decreased substrate coverage. Transmission electron microscopy (TEM) revealed a dual-layered tribofilm with a carbon-rich layer above a pure layer of ZDDP tribofilm. Within the carbon-rich layer, the GNPs formed into scrolls which created an internal network through which current could flow, being limited by the insulating pure ZDDP layer at the film-substrate interface, and the presence of surface graphene sheets. A modified lateral force microscopy (LFM) procedure supported the presence of surface graphene sheets. Despite limited deposition precision in terms of homogeneity and distribution of the tribofilms, this work provides a step towards the use of 3D TNP for the manufacture of electronic structures on the nanoscale by proving that tribofilms can be functionalised by the addition of particle additives.

Effect of applied electrical potential and humidity on friction of Graphene-Based thin films

Understanding the nanofrictional characteristics of thin films in various conditions is important for fabricating nanoelectronic devices and micro-/nanoelectromechanical systems with high functionality and reliability. This study investigated the nanofrictional characteristics of composite thin films of graphene oxide (GO) and cellulose nanocrystals (CNCs) and of reduced graphene oxide (rGO) and CNCs, namely GO/CNC and rGO/CNC thin films, under an applied electrical potential and humidity by using a conductive atomic force microscope (AFM). For all films, the coefficient of friction (CoF) was affected by the applied electrical potential and enhanced mechanical properties resulting from strong interactions of GO and rGO with CNCs. Furthermore, the friction force increased with the electrical potential at low humidities (relative humidity (RH) < 40 %) because of the electrostatic force effect, while for RH>40 %, the friction force sensitively increased with the electrical potential because of the puckering effect. At high humidities (RH>40 %) and high electrical potentials (>4 V), the friction force decreased as the electrical potential increased, owing to the electron leakage phenomenon. This study also characterized the altered nanofrictional behavior influenced by interfacial phenomena in the films under an electrical potential and humidity, and it provides design guidelines for fabricating nanoelectronic devices and micro/nanoelectromechanical systems.

The role of carbon segregation in the electrical activity of dislocations in carbon doped GaN

Dislocations have been proposed to affect the performance and reliability of GaN power semiconductors by being conductive pathways for leakage current. However, no direct evidence of a link between their electrical behavior and physical nature in carbon-doped semi-insulating GaN buffer layers has been obtained. Therefore, we investigate the electrical activity of dislocations by conductive atomic force microscopy and electron beam induced current to distinguish electrically active dislocations from non-active ones. We investigated six electrically active dislocations and discovered distinct carbon enrichment in the vicinity of all six dislocations, based on cross-sectional scanning transmission electron microscopy using electron energy loss spectrometry. Electrically non-active dislocations, which are the vast majority, sometimes also showed carbon enrichment, however, in only two out of seven cases. Consequently, carbon segregation seems to be a requirement for electrical activity, but a carbon surplus is not sufficient for electrical activity. We also performed first-principles total-energy calculations for mixed type threading dislocations, which validates carbon accumulation in the dislocation vicinity. The electrical and physical characterization results, complemented by density functional theory simulations, support the previously hypothesized existence of a carbon defect band and add new details.

CsPbI3 Perovskite Quantum Dot-Based WORM Memory Device with Intrinsic Ternary States.

The migration of mobile ionic halide vacancies is usually considered detrimental to the performance and stability of perovskite optoelectronic devices. Taking advantage of this intrinsic feature, we fabricated a CsPbI3 perovskite quantum dot (PQD)-based write-once-read-many-times (WORM) memory device with a simple sandwich structure that demonstrates intrinsic ternary states with a high ON/OFF ratio of 103:102:1 and a long retention time of 104 s. Through electrochemical impedance spectroscopy, we proved that the resistive switching is achieved by the migration of mobile iodine vacancies (VIs) under an electric field to form conductive filaments (CFs). Using in situ conductive atomic force microscopy, we further revealed that the multilevel property arises from the different activation energies for VIs to migrate at grain boundaries and grain interiors, resulting in two distinct pathways for CFs to grow. Our work highlights the potential of CsPbI3 PQD-based WORM devices, showcasing intrinsic multilevel properties achieved in a simple device structure by rationally controlling the drift of ionic defects.

Study of the electronic transport performance of ZnO-SiO2 film: the construction of grain boundary barrier

Purpose The purpose of this study is to adjust the electronic transport performance of zinc oxide–silicon dioxide (ZnO-SiO2) film by the construction of a grain boundary barrier. Design/methodology/approach ZnO-SiO2 thin films were prepared on glass substrates by a simple sol-gel method. The crystal structure of ZnO and ZnO-SiO2 powders were tested by X-ray diffraction with copper (Cu) Kα radiation. The absorption spectra of ZnO and ZnO-SiO2 films were recorded by a ultraviolet-visible spectrophotometer. The micro electrical transport performance of ZnO-SiO2 thin films were investigated by conductive atomic force microscope and electrostatic force microscope. Findings The results show that the current of ZnO-SiO2 film decrease, indicating that the mobility of ZnO-SiO2 film is greatly decreased, owing to the formation of the grain boundary barrier between ZnO and SiO2. The phase variation of ZnO-SiO2 film increases due to the electron accumulation at grain boundaries. Originality/value ZnO and ZnO-5SiO2 thin films prepared on glass substrates by a simple sol-gel method were first studied by CAFM and EFM. The band gaps of ZnO and ZnO-5SiO2 is ∼3.05 eV and 3.15 eV, respectively. The barrier height of ZnO-5SiO2 film increased by ∼0.015 eV after introducing SiO2. The phase variation intensity increased to a certain extent after doping SiO2, due to the increased GB barrier. ZnO-5SiO2 film will be a promising ETL candidate in the application of QLEDs field.

Unveiling Local Current Behavior and Manipulating Grain Homogenization of Perovskite Films for Efficient Solar Cells.

Achieving high power conversion efficiency in perovskite solar cells (PSCs) heavily relies on fabricating homogeneous perovskite films. However, understanding microscopic-scale properties such as current generation and open-circuit voltage within perovskite crystals has been challenging due to difficulties in quantifying intragrain behavior. In this study, the local current intensity within state-of-the-art perovskite films mapped by conductive atomic force microscopy reveals a distinct heterogeneity, which exhibits a strong anticorrelation to the external biases. Particularly under different external bias polarities, specific regions in the current mapping show contrasting conductivity. Moreover, grains oriented differently exhibit varied surface potentials and currents, leading us to associate this local current heterogeneity with the grain orientation. It was found that the films treated with isopropanol exhibit ordered grain orientation, demonstrating minimized lattice heterogeneity, fewer microstructure defects, and reduced electronic disorder. Importantly, devices exhibiting an ordered orientation showcase elevated macroscopic optoelectronic properties and boosted device performance. These observations underscore the critical importance of fine-tuning the grain homogenization of perovskite films, offering a promising avenue for further enhancing the efficiency of PSCs.

Enhancing electrical properties through in-situ controlled nanocrystallization of V2O5–TeO2 glass

V2O5–TeO2 glass–ceramics (VTGC) were prepared by controlled annealing of the V2O5–TeO2 glass (VTG), which illustrates a parent glass matrix with a single charge carrier. The annealing proceeded at six temperatures selected between the glass transition and the maximum of the first crystallization process to obtain various nanocrystallite sizes. Heat treatment caused an increase in DC conductivity by 2.5–3.5 (250–285 °C) order of magnitude. Using thermal analysis, the crystal growth process was determined to be 1D. Structural studies show that the obtained materials are partially amorphous and polycrystalline with nanometer-sized crystallites. Subtle thread-like structures were observed using conductive AFM. The activation energy of the conduction process decreased from 0.38 eV in VTG to 0.18–0.11 eV (250–285 °C) in VTGC. The radii of crystallites were calculated based on the theoretical model of electron hopping between connected semiconducting nanocrystallites and vary between 1.7 and 2.8 nm (250–285 °C). Thermoelectric studies indicate constant carrier concentration. Features characteristic of small polaron hopping-governed materials were observed. We suggest V3O7 nanocrystals as conductive media in VTGC.Graphical abstract

Atomic-crystal transition metal dichalcogenides Schottky triboelectricity nanogenerator with ultrahigh direct-current density

Direct-current triboelectric nanogenerators (DC-TENGs) have recently become more attractive to convert mechanical energy into electricity due to their high current density with no need for rectification. Interfacial charge transfer, induced by the sliding contact on semiconductor materials, is critical to generate DC output but usually limited by the interfacial properties. Here, we report Schottky DC-TENGs based on the atomic-crystal transition-metal dichalcogenides (TMDs) with single crystallinity, monolayer thickness and atomic flatness to enhance the interfacial charge transfer. A record-high current density of 1010 A/m2, two orders of magnitude higher than the state-of-the-art performance, can be directly generated by sliding a conductive-atomic force microscope tip on an atomic-crystal molybdenum disulfide. Density functional theory calculation and finite element simulation reveal that this ultrahigh current density can be attributed to the enhanced interfacial property owing to the atomic flatness of TMDs and strong local electrical field of nanoscale tip. We further demonstrate their excellent scalability by a high-crystalline monolayer film with sliding electrode. This work may guide and accelerate the development and application of high-performance DC-TENGs.

Interplay between photoinduced charge and energy transfer in manganese doped perovskite quantum dots.

A comprehensive study on the photo-excited relaxation dynamics in semiconducting perovskite quantum dots (PQDs) is pivotal in realizing their extensive potential for optoelectronics applications. Among different competing photoinduced relaxation kinetics, energy transfer and charge transfer (CT) in PQDs need special attention, as they often influence the device efficacy, particularly with the donor-acceptor hybrid architecture. In this work, we explore a detailed investigation into photoinduced CT dynamics in mixed halide undoped CsPb(Br/Cl)3 and Mn2+ doped CsPb(Br/Cl)3 PQDs with a quinone molecule, p-benzoquinone (BQ). The energy level alignment of undoped PQDs with BQ allows an efficient CT, whereas Mn2+ doping reduces the CT efficiency, experiencing a competition between energy transfer from host to dopant and CT to BQ. The conductive atomic force microscopy measurements unveil a direct correlation with the spectroscopic studies by showing a significant improvement in the conductance of undoped PQDs in the presence of BQ, while an inappreciable change is observed for doped PQDs. A much-reduced transition voltage and barrier height in the presence of BQ further validate faster CT for undoped PQD than the doped one. Furthermore, Mn2+ doping in PQDs is observed to enhance their stability, showing better air and thermal stability compared to their undoped counterparts. These results reveal that doping strategy can regulate the CT dynamics in these PQDs and increase their stability, which will be beneficial for the development of desired optoelectronic devices with long-term stability.

Tunable topological domain structures in high-density PbTiO3 nanodots array

In this work, we demonstrated that tunable topological domain structures, e.g., center-type domains and skyrmion-like polar bubbles, can be generated at room temperature in high-density epitaxial PbTiO3 nanodots fabricated via the template-assisted tailoring of thin films. These topological domain structures can be manipulated electrically by applying an appropriate bias on the conductive atomic force microscopy tip, allowing for writing, erasing, and rewriting of topological domains into the nanodot. Moreover, ring-shaped conductive channels are observed around the center-type domain states. These findings provide a playground for further exploring their emerging functionalities and application potentials for nanoelectronics.