Conductivity Modulation Research Articles

Electrically regulated thermal conductivity of aramid polymer systems

Aramid polymers, renowned for their electronic insulation and thermal conductive properties, are widely adopted as thermal management materials in power electronics. However, the thermal conductivity of aramid polymers under electric field has not been thoroughly understood. In this study, we investigated the thermal conductivity of amorphous and aligned aramid polymer systems under electrical field utilizing equilibrium molecular dynamics simulations. Simulation results showed that the alignment of polymer chain can significantly enhance the thermal conductivity of aramid polymer systems, achieving up to 10.13 W/m-K. Moreover, polarization of aligned aramid polymer was observed when the applied electric field exceeded 14 V/nm. Interestingly, the thermal conductivity of aligned aramid polymer was selectively modulated by the applied electric field. To unravel the underlying phonon mechanism, the molecular orientation of polymer chains and phonon spectral information were analyzed. Our study provides guidance into understanding thermal transport mechanism and thermal conductivity modulation in polymers.

Intercorrelated Ferroelectricity and Bulk Photovoltaic Effect in Two-Dimensional Sn2P2S6 Semiconductor for Polarization-Sensitive Photodetection.

A two-dimensional (2D) ferroelectric semiconductor, which is coupled with photosensitivity and room-temperature ferroelectricity, provides the possibility of coordinated conductance modulation by both electric field and light illumination and is promising for triggering the revolution of optoelectronics for monolithic multifunctional integration. Here, we report that semiconducting Sn2P2S6 crystals can be achieved in a 2D morphology using a chemical vapor transport approach with the assistant of space confinement and experimentally demonstrate the robust ferroelectricity in atomic-thin Sn2P2S6 nanosheet at room temperature. The intercorrelated programming of ferroelectric order along out-of-plane (OOP) and in-plane (IP) directions enables a tunable bulk photovoltaic (BPV) effect through multidirectional electrical control. By combining the capability of anisotropic in-plane optical absorption, a highly integrated Sn2P2S6 optoelectronic device vertically sandwiched with graphene electrodes yields the polarization-dependent open-circuit photovoltage with a dichroic ratio of 2.0 under 405 nm light illumination. The reintroduction of ferroelectric Sn2P2S6 to the 2D asymmetric semiconductor family provides possibilities to hardware implement of the self-powered polarization-sensitive photodetection and spotlights the promising applications for next-generation photovoltaic devices.

Efficient Spiking Neural Networks with Biologically Similar Lithium-Ion Memristor Neurons.

Benefiting from the brain-inspired event-driven feature and asynchronous sparse coding approach, spiking neural networks (SNNs) are becoming a potentially energy-efficient replacement for conventional artificial neural networks. However, neuromorphic devices used to construct SNNs persistently result in considerable energy consumption owing to the absence of sufficient biological parallels. Drawing inspiration from the transport nature of Na+ and K+ in synapses, here, a Li-based memristor (LixAlOy) was proposed to emulate the biological synapse, leveraging the similarity of Li as a homologous main group element to Na and K. The Li-based memristor exhibits ∼8 ns ultrafast operating speed, 1.91 and 0.72 linearity conductance modulation, and reproducible switching behavior, enabled by lithium vacancies forming a conductive filament mechanism. Moreover, these memristors are capable of simulating fundamental behaviors of a biological synapse, including long-term potentiation and long-term depression behaviors. Most importantly, a threshold-tunable leaky integrate-and-fire (TT-LIF) neuron is built using LixAlOy memristors, successfully integrating synaptic signals from both temporal and spatial levels and achieving an optimal threshold of SNNs. A computationally efficient TT-LIF-based SNN algorithm is also implemented for image recognition schemes, featuring a high recognition rate of 90.1% and an ultralow firing rate of 0.335%, which is 4 times lower than those of other memristor-based SNNs. Our studies reveal the ion dynamics mechanism of the LixAlOy memristor and confirm its potential in rapid switching and the construction of SNNs.

Needle-like quantum dots effectively guide conductive filaments in hafnium-based memory devices

In this work, self-assembled needle-like quantum dots (CdSe-ZnS QDs) are used to enhance the local electric fields, and the formation/rupture of CFs happens at the QDs/HfOx interface, greatly reducing the randomness of CFs generation. The consistency has been significantly improved. SET voltage’s coefficient of variation (δ/μ) decreased from 13.8% to 6.7%, while δ/μ of low resistive state (LRS) even became as low as 1.56%. The QDs-HfOx device can realize multi-level conductance modulation and mimic the behavior of long-term potentiation (LTP) and long-term depression (LTD). Further, The MNIST handwritten recognition dataset achieved high recognition accuracies (93.96%) for neuromorphic simulations. The device shows tremendous potential in neural networks and analog computation.

Effect of van der Waals homogeneous interface on lattice thermal conductivity of Janus WSSe bilayer

Vertically stacked 2D materials have provided an unprecedented platform to identify various physical properties and discover novel interfacial emergent phenomena. In this study, the lattice thermal conductivity of Janus WSSe bilayer, involving diverse interfacial stacking configurations, has been clarified by solving the phonon Boltzmann transport equation based on first-principles calculations. The effect of homogeneously stacking on thermal conductivity and potential modulation approaches has also been revealed for Janus WSSe. Our results indicate that the thermal transport in Janus WSSe bilayer can be suppressed by van der Waals interface, and depends on both the stacking patterns and interfacial compositions (S-S, Se-Se and Se-S interfaces). Moreover, the interface effect can be further modulated by an applied vertical pressure. A further reduction in thermal conductivity can be achieved for Janus WSSe bilayer under vertical pressure, implying great potential for efficient thermal management and sensing applications.

Realizing reliable linearity and forming-free property in conductive bridging random access memory synapse by alloy electrode engineering

The linearity of conductance modulation of the artificial synapse severely restricts the recognition accuracy and the convergence rate in the learning of artificial neural networks. In this work, by alloy electrode engineering, a Ti–Ag device gained the forming-free property because Ag ions were promoted to migrate into the GeTeOx layer to form a thicker conductive filament. This facilitated a uniform change in conductance with the pulse number, and the alloy synapse achieved a significant improvement in linearity (350%), which demonstrated its enhancement in recognition accuracy. To further validate its potential as a comprehensive artificial synapse, the multi-essential synaptic behaviors, including spike-timing-dependent plasticity, spike-rate-dependent plasticity, paired-pulse facilitation, post-tetanic potentiation, and excitatory post-synaptic current, were achieved successfully. This work proposes a promising approach to enhance the performance of conductive bridging random access memory synaptic devices, which benefits the hardware implementation of neuromorphic systems.

High‐Performance GdNiO3Epitaxial Film Memristor for Neuralactivity Analysis

AbstractPerovskite‐type rare earth nickelates based memristor have recently attracted extensive attention in the field of novel storage computing due to their special electronic structure and exotic physical properties. However, there is still a shortage of memristors with ultra‐high stability performance, which will provide a solid foundation for future neural network computing with high accuracy recognition rates. Here, a GdNiO3‐based interfacial memristor is presented, which possesses ultra‐high stable performance, such as electroforming‐free, low device‐to‐device variation, reliable cyclic switching, high on/off ratio (≈104) and stable pulse modulation of conduction. Combined with the comprehensive microstructure results, this behavior is ascribed to the interface Schottky barrier variation caused by the 1D oxygen vacancy channel conduction according to the transmission electron microscopy results. In particular, based on the device's stable pulse modulation plasticity performance, the study also succeeds in achieving highly accurate neural firing pattern recognition up to ≈99.75% accuracy and monitoring of pattern transitions by implementing a reservoir computing system based on the device. This research advances the progress of nickelates in novel storage computing and paves the way for future efficient memristor‐based reservoir computing systems to handle more complex temporal tasks.

Differential pressure sensors based on transfer-free piezoresistive layered PdSe2 thin films

Piezoresistive layered two-dimensional (2D) crystals offer intriguing promise as pressure sensors for microelectromechanical systems (MEMS) due to their remarkable strain-induced conductivity modulation. However, integration of the conventional chemical vapor deposition grown 2D thin films onto a micromachined silicon platform requires a complex transfer process, which degrades their strain-sensing performance. In this study, we present a differential pressure sensor built on a transfer-free piezoresistive PdSe2 polycrystalline film deposited on a SiN x membrane by plasma-enhanced selenization of a metal film at a temperature as low as 200 °C. Based on the resistance change and finite element strain analysis of the film under membrane deflection, we show that a 7.9 nm thick PdSe2 film has a gauge factor (GF) of −43.3, which is ten times larger than that of polycrystalline silicon. The large GF enables the development of a diaphragm pressure sensor with a high sensitivity of 3.9 × 10−4 kPa−1 within the differential pressure range of 0–60 kPa. In addition, the sensor with a Wheatstone bridge circuit achieves a high voltage sensitivity of 1.04 mV·kPa−1, a rapid response time of less than 97 ms, and small output voltage variation of 8.1 mV in the temperature range of 25 °C to 55 °C. This transfer-free and low-temperature grown PdSe2 piezoresistive thin film is promising for MEMS transducer devices.

Highly effective cystic fibrosis transmembrane conductance (regulator) modulator therapy: shifting the curve for most while leaving some further behind.

Traditional cystic fibrosis (CF) care had been focused on early intervention and symptom mitigation. With the advent of highly effective cystic fibrosis transmembrane conductance regulator (CFTR) modulator therapy (HEMT), in particular, the approval of elexacaftor/tezacaftor/ivacaftor in 2019, there has been a dramatic improvement in outcomes in CF. The purpose of this article is to review the benefits, limitations, and impact of HEMT as well as discuss the new implications, challenges, and hope that modulators bring to people with CF (pwCF). HEMT has demonstrated sustained improvement in lung function, nutrition, quality of life, and survival for over 90% of pwCF. As HEMT has delivered such promise, there is a small but significant portion of pwCF who do not benefit from HEMT due to ineligible mutations, intolerance, or lack of accessibility to modulators. HEMT has significantly improved outcomes, but continued research is needed to understand the new challenges and implications the era of HEMT will bring, as well as how to provide equitable care to those who are unable to benefit from HEMT.

Electrochemical Analysis of Ion Effects on Electrolyte-Gated Synaptic Transistor Characteristics.

Electrolyte-gated transistors (EGTs) are promising candidates as artificial synapses owing to their precise conductance controllability, quick response times, and especially their low operating voltages resulting from ion-assisted signal transmission. However, it is still vague how ion-related physiochemical elements and working mechanisms impact synaptic performance. Here, to address the unclear correlations, we suggest a methodical approach based on electrochemical analysis using poly(ethylene oxide) EGTs with three alkali ions: Li+, Na+, and K+. Cyclic voltammetry is employed to identify the kind of electrochemical reactions taking place at the channel/electrolyte interface, which determines the nonvolatile memory functionality of the EGTs. Additionally, using electrochemical impedance spectroscopy and qualitative analysis of electrolytes, we confirm that the intrinsic properties of electrolytes (such as crystallinity, solubility, and ion conductivity) and ion dynamics ultimately define the linearity/symmetricity of conductance modulation. Through simple but systematic electrochemical analysis, these results offer useful insights for the selection of components for high-performing artificial synapses.

Conduction Modulation of Solution‐Processed 2D Materials

AbstractSolution‐processed 2D materials hold promise for their scalable applications. However, the random, fragmented nature of the solution‐processed nanoflakes and the poor percolative conduction through their discrete networks limit the performance of the enabled devices. To overcome the problem, conduction modulation of the solution‐processed 2D materials is reported via Stark effect. Using liquid‐phase exfoliated molybdenum disulfide (MoS2) as an example, nonlinear conduction switching with a ratio of >105 is demonstrated by the local fields from the interfacial ferroelectric P(VDF‐TrFE). Through density‐functional theory calculations and in situ Raman scattering and photoluminescence spectroscopic analysis, the modulation is understood to arise from a charge redistribution in the solution‐processed MoS2. Beyond MoS2, the modulation may be shown effective for the other solution‐processed 2D materials and low‐dimensional materials. The modulation can open their electronic device applications, for instance, thin‐film nonlinear electronics and non‐volatile memories.

A Diffusive Artificial Synapse Based on Charged Metal Nanoparticles.

We show that a diffusive memristor with analogue switching characteristics can be achieved in a layer of gold nanoparticles (AuNPs) functionalized with charged self-assembled monolayers (deprotonated 11-mercaptoundecanoic acid). The nanoparticle core and the anchored stationary charges are jammed within the layer while the mobile counterions [N(CH3)4+] can respond to the electric field and spontaneously diffuse back to the initial positions upon removal of the field. This metal nanoparticle device is set-step free, energy consumption efficient, mechanically flexible, and analogous to bio-Ca2+ dynamics and has tunable conductance modulation capabilities at the counterion concentrations. The gradual resistive switching behavior enables us to implement several important synaptic functions such as potentiation/depression, spike voltage-dependent plasticity, spike duration-dependent plasticity, spike frequency-dependent plasticity, and paired-pulse facilitation. Finally, on the basis of the paired-pulse facilitation characteristics, the metal nanoparticle diffusive artificial synapse is used for edge extraction with exhibits excellent performance.

Coherent Terahertz Detection via Ultrafast Dynamics of Hot Dirac Fermions in Graphene.

Graphene has recently been shown to exhibit ultrafast conductivity modulation due to periodic carrier heating by either terahertz (THz) waves, leading to self-induced harmonic generation, or the intensity beat note of two-color optical radiation. We exploit the latter to realize an optoelectronic photomixer for coherent, continuous-wave THz detection, based on a photoconductive antenna with multilayer CVD-grown graphene in the gap. While for biased THz emitters the dark current would pose a serious detriment for performance, we show that this is not the case for bias-free THz detection and demonstrate detection up to frequencies of at least 700 GHz at room temperature, even without optimized tuning of the doping. We account for the photocurrent and photomixing response using detailed simulations of the time-dependent carrier distribution, which also indicate significant potential for enhancement of the sensitivity, to become competitive with well-established semiconductor photomixers.

Electrochemical Ionic Synapses with Mg2+as the Working Ion

AbstractDynamic doping by electrochemical ion intercalation is a promising mechanism for modulating electronic conductivity, allowing for energy‐efficient, brain‐inspired computing hardware. While proton‐based devices have achieved success in terms of speed and efficiency, the volatility and environmental pervasiveness of hydrogen (H) might limit the robustness of devices during fabrication, as well as the long‐term retention of devices after programming. This motivates the search for alternative working ions. In this work, a proof‐of‐concept is demonstrated for electrochemical ionic synapses (EIS) based on intercalation of Mg2+ions. The reported device has a symmetric design, with MgxWO3used as both the gate and channel material. Increasing the Mg fraction,x, in WO3increases the electronic conductance in a continuum over a large range (80 nS − 2 mS). Ex situ characterization of the channel confirms that modulation of channel conductance is due to Mg2+intercalation. Unlike H‐EIS which rapidly loses programmed conductance states over a few seconds when exposed to air, Mg‐EIS can be operated and has good retention in air, with no sign of degradation after 1 h. Mg2+as a working ion with WO3as the channel is a promising material system for EIS with long‐term retention and low energy consumption.

Two-component nematic superconductivity in 4Hb-TaS2

Most superconductors have an isotropic, single component order parameter and are well described by the standard (BCS) theory for superconductivity. Unconventional, multiple-component superconductors are exceptionally rare and are much less understood. Here, we combine scanning tunneling microscopy and angle-resolved macroscopic transport for studying the candidate chiral superconductor, 4Hb-TaS2. We reveal quasi-periodic one-dimensional modulations in the tunneling conductance accompanied by two-fold symmetric superconducting critical field. The strong modulation of the in-plane critical field, Hc2, points to a nematic, unconventional order parameter. However, the imaged vortex core is isotropic at low temperatures. We suggest a model that reconciles this apparent discrepancy and takes into account previously observed spontaneous time-reversal symmetry breaking at low temperatures. The model describes a competition between a dominating chiral superconducting order parameter and a nematic one. The latter emerges close to the normal phase. Our results strongly support the existence of two-component superconductivity in 4Hb-TaS2 and can provide valuable insights into other systems with coexistent charge order and superconductivity.

Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions

Ferroelectric tunnel junctions are promising towards high-reliability and low-power non-volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling electroresistance when the ferroelectric layer is thinned down towards atomic scale because of the ferroelectric structural instability and large depolarization field. Here we report ferroelectric tunnel junctions based on samarium-substituted layered bismuth oxide, which can maintain tunnelling electroresistance of 7 × 105 with the samarium-substituted bismuth oxide film down to one nanometer, three orders of magnitude higher than previous reports with such thickness, owing to efficient barrier modulation by the large ferroelectric polarization. These ferroelectric tunnel junctions demonstrate up to 32 resistance states without any write-verify technique, high endurance (over 5 × 109), high linearity of conductance modulation, and long retention time (10 years). Furthermore, tunnelling electroresistance over 109 is achieved in ferroelectric tunnel junctions with 4.6-nanometer samarium-substituted bismuth oxide layer, which is higher than commercial flash memories. The results show high potential towards multi-level and reliable non-volatile memories.

Self-Rectifying All-Optical Modulated Optoelectronic Multistates Memristor Crossbar Array for Neuromorphic Computing.

Researching optoelectronic memristors capable of integrating sensory and processing functions is essential for advancing the development of efficient neuromorphic vision. Here, we experimentally demonstrated an all-optical controlled and self-rectifying optoelectronic memristor (OEM) crossbar array with the function of multilevel storage under light stimuli. The NiO/TiO2 device exhibits an ultrahigh (>104) rectifying ratio (RR) thus overcoming the presence of sneak current. The reversible conductance modulation without electric signal involvement provides a novel way to realize ultrafast information processing. The proposed OEM array realized synaptic functions observed in the human brain, including long-term potentiation (LTP), long-term depression (LTD), paired-pulse facilitation (PPF), the transition from short-term memory (STM) to long-term memory (LTM), and learning experience behaviors successfully. The authors present a novel OEM crossbar that possesses complete light-modulation capabilities, potentially advancing the future development of efficient neuromorphic vision.

Tuning of Interfacial Charge Transport in Organic Heterostructures via Aryl Electrografting for Efficient Gas Sensors.

Modulation of interfacial conductivity in organic heterostructures is a highly promising strategy to improve the performance of electronic devices. In this endeavor, the present work reports the fabrication of a bilayer heterojunction device, combining octafluoro copper phthalocyanine (CuF8Pc) and lutetium bis-phthalocyanine (LuPc2) and tunes the charge transport at the Cu(F8Pc)-(LuPc2) interface by aryl electrografting on the device electrode to improve the device NH3-sensing properties. Dimethoxybenzene (DMB) and tetrafluoro benzene (TFB) electrografted by an aryldiazonium electroreduction method form a few-nanometer-thick organic film on ITO. The conductivity of the heterojunction devices formed by coating a Cu(F8Pc)/LuPc2 bilayer over the aryl-grafted electrode strongly varies according to the electronic effects of the substituents in the aryl. Accordingly, DMB increases while TFB decreases the mobile charges accumulation at the Cu(F8Pc)-(LuPc2) interface. This is explained by the perfect alignment of the frontier molecular orbitals of DMB and Cu(F8Pc), facilitating charge injection into the Cu(F8Pc) layer. On the contrary, TFB behaves like a strong acceptor and reduces the mobile charges accumulation at the Cu(F8Pc)-(LuPc2) interface. Such interfacial conductivity variation influences the device NH3-sensing properties, which increase because of DMB grafting and decrease in the presence of TFB. DMB-based heterojunction devices contain four times higher active sites for NH3 adsorption and could detect NH3 down to 1 ppm with limited interference from humidity, making them suitable for real environment NH3 detection.

Time/Current-Dependent Surge Current Capability of Fully-Vertical GaN-on-GaN PiN Diode With Conductivity Modulation

Time/Current-Dependent Surge Current Capability of Fully-Vertical GaN-on-GaN PiN Diode With Conductivity Modulation

Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoOx/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution.

Artificial synaptic devices have been extensively investigated for neuromorphic computing systems, which require synaptic behaviors mimicking the biological ones. In particular, a highly linear and symmetric weight update with a conductance (or resistance) change for potentiation and depression operation is one of the essential requirements for energy-efficient neuromorphic computing; however, it is not sufficiently met. In this study, a memristor with a Pt/p-LiCoOx/p-NiO/Pt structure is investigated, where a low interface energy barrier between the Pt electrode and the NiO layer makes for a more linear and symmetric conductance change. In addition, the use of voltage-driven Li+ ion redistribution in the NiO layer facilitates the analog conductance change at a low voltage. Besides the linear and symmetric potentiation and depression weight updates, the memristor exhibits various synaptic characteristics such as the dependence of weight update on the pulse amplitude and number, paired pulse facilitation, and short-term and long-term plasticity. The conductance modulation is thought to be induced by a tunable interface energy barrier at the NiO layer and Pt bottom electrode, as a result of Li+ ion diffusion in NiO supplied from the LiCoOx layer and their redistribution. Thanks to the use of Li+ ion redistribution, the conductance change could be achieved at a voltage <4 V within the time of μs range. These results verify the potential of artificial synapses with the Pt/LiCoOx/NiO/Pt memristor operated by voltage-driven Li+ ion redistribution under the low interface energy barrier conditions, realizing a highly linear and symmetric weight update at a low voltage with a high speed for energy-efficient neuromorphic computing systems.